KR100781925B1 - 포토레지스트 박리 방법 - Google Patents

포토레지스트 박리 방법 Download PDF

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Publication number
KR100781925B1
KR100781925B1 KR1020047017197A KR20047017197A KR100781925B1 KR 100781925 B1 KR100781925 B1 KR 100781925B1 KR 1020047017197 A KR1020047017197 A KR 1020047017197A KR 20047017197 A KR20047017197 A KR 20047017197A KR 100781925 B1 KR100781925 B1 KR 100781925B1
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KR
South Korea
Prior art keywords
photoresist
substrate
low dielectric
water
dielectric layer
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Expired - Fee Related
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KR1020047017197A
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English (en)
Korean (ko)
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KR20050006191A (ko
Inventor
요코이시게루
와키야가즈마사
하라구치다카유키
Original Assignee
도오꾜오까고오교 가부시끼가이샤
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Publication of KR20050006191A publication Critical patent/KR20050006191A/ko
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Publication of KR100781925B1 publication Critical patent/KR100781925B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020047017197A 2002-04-26 2003-04-25 포토레지스트 박리 방법 Expired - Fee Related KR100781925B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002125471 2002-04-26
JPJP-P-2002-00125471 2002-04-26
JPJP-P-2002-00308993 2002-10-23
JP2002308993A JP3516446B2 (ja) 2002-04-26 2002-10-23 ホトレジスト剥離方法
PCT/JP2003/005336 WO2003091806A1 (fr) 2002-04-26 2003-04-25 Procede de retrait de photoresist

Publications (2)

Publication Number Publication Date
KR20050006191A KR20050006191A (ko) 2005-01-15
KR100781925B1 true KR100781925B1 (ko) 2007-12-04

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KR1020047017197A Expired - Fee Related KR100781925B1 (ko) 2002-04-26 2003-04-25 포토레지스트 박리 방법

Country Status (8)

Country Link
US (5) US20050176259A1 (https=)
EP (1) EP1550912A4 (https=)
JP (1) JP3516446B2 (https=)
KR (1) KR100781925B1 (https=)
CN (1) CN1650235A (https=)
AU (1) AU2003235130A1 (https=)
TW (1) TW200307186A (https=)
WO (1) WO2003091806A1 (https=)

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CN113589662B (zh) * 2021-07-30 2022-07-12 浙江奥首材料科技有限公司 一种组合物、剥离液及其在剥离光刻胶或光刻胶残余物中的应用和剥离方法
CN115469516B (zh) * 2022-11-03 2023-03-24 江苏奥首材料科技有限公司 一种用于三五族半导体化合物光刻胶的剥离剂、其制备方法及用途
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
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Publication number Publication date
KR20050006191A (ko) 2005-01-15
AU2003235130A1 (en) 2003-11-10
TW200307186A (en) 2003-12-01
US20070298619A1 (en) 2007-12-27
WO2003091806A1 (fr) 2003-11-06
US20110000874A1 (en) 2011-01-06
US20080280452A1 (en) 2008-11-13
JP3516446B2 (ja) 2004-04-05
JP2004029696A (ja) 2004-01-29
EP1550912A1 (en) 2005-07-06
US20050176259A1 (en) 2005-08-11
EP1550912A4 (en) 2006-09-06
TWI304525B (https=) 2008-12-21
CN1650235A (zh) 2005-08-03
US20090291565A1 (en) 2009-11-26
US8354215B2 (en) 2013-01-15

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