JP4463054B2 - ホトレジスト用剥離液およびこれを用いた基板の処理方法 - Google Patents
ホトレジスト用剥離液およびこれを用いた基板の処理方法 Download PDFInfo
- Publication number
- JP4463054B2 JP4463054B2 JP2004271945A JP2004271945A JP4463054B2 JP 4463054 B2 JP4463054 B2 JP 4463054B2 JP 2004271945 A JP2004271945 A JP 2004271945A JP 2004271945 A JP2004271945 A JP 2004271945A JP 4463054 B2 JP4463054 B2 JP 4463054B2
- Authority
- JP
- Japan
- Prior art keywords
- stripping solution
- photoresist
- component
- mass
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 88
- 239000000758 substrate Substances 0.000 title claims description 37
- 238000003672 processing method Methods 0.000 title description 6
- 150000001875 compounds Chemical class 0.000 claims description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 29
- 238000004380 ashing Methods 0.000 claims description 22
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical group CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 21
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 229910021645 metal ion Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 150000003839 salts Chemical class 0.000 claims description 14
- 239000003960 organic solvent Substances 0.000 claims description 12
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 239000012964 benzotriazole Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 8
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- HHYPDQBCLQZKLI-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(5-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=C2N(CN(CCO)CCO)N=NC2=C1 HHYPDQBCLQZKLI-UHFFFAOYSA-N 0.000 claims description 5
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 claims description 5
- 150000001565 benzotriazoles Chemical class 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 claims description 4
- VKXMUYIAJVLZOM-UHFFFAOYSA-N 1-(2-aminophenyl)sulfanyl-3-sulfanylpropan-2-ol Chemical compound NC1=CC=CC=C1SCC(O)CS VKXMUYIAJVLZOM-UHFFFAOYSA-N 0.000 claims description 3
- ZUHDIDYOAZNPBV-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(4-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=CC2=C1N=NN2CN(CCO)CCO ZUHDIDYOAZNPBV-UHFFFAOYSA-N 0.000 claims description 3
- WVIXTJQLKOLKTQ-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,2-diol Chemical compound C1=CC=C2N(CC(O)CO)N=NC2=C1 WVIXTJQLKOLKTQ-UHFFFAOYSA-N 0.000 claims description 3
- KVFLEGRBTUDZRD-UHFFFAOYSA-N 1-(2-hydroxyethylsulfanyl)-3-sulfanylpropan-2-ol Chemical compound OCCSCC(O)CS KVFLEGRBTUDZRD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 55
- 239000010949 copper Substances 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- -1 aluminum-silicon-copper Chemical compound 0.000 description 21
- 238000002156 mixing Methods 0.000 description 17
- 239000002585 base Substances 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 14
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 206010040844 Skin exfoliation Diseases 0.000 description 10
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 9
- 239000005380 borophosphosilicate glass Substances 0.000 description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 229910017855 NH 4 F Inorganic materials 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 7
- 125000002947 alkylene group Chemical group 0.000 description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000001629 suppression Effects 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 239000000908 ammonium hydroxide Substances 0.000 description 5
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 4
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- QFXZANXYUCUTQH-UHFFFAOYSA-N ethynol Chemical compound OC#C QFXZANXYUCUTQH-UHFFFAOYSA-N 0.000 description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 150000002222 fluorine compounds Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 3
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 2
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 150000003139 primary aliphatic amines Chemical class 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 150000005619 secondary aliphatic amines Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- 150000003510 tertiary aliphatic amines Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229940035024 thioglycerol Drugs 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- AZLXQBNSOMJQEJ-UHFFFAOYSA-N 1,3-di(propan-2-yl)imidazolidin-2-one Chemical compound CC(C)N1CCN(C(C)C)C1=O AZLXQBNSOMJQEJ-UHFFFAOYSA-N 0.000 description 1
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 description 1
- 229940043375 1,5-pentanediol Drugs 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 1
- FVRSWMRVYMPTBU-UHFFFAOYSA-M 1-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCC(O)[N+](C)(C)C FVRSWMRVYMPTBU-UHFFFAOYSA-M 0.000 description 1
- ZHPSBMQVLQEIIC-UHFFFAOYSA-N 1-methoxybenzotriazole Chemical compound C1=CC=C2N(OC)N=NC2=C1 ZHPSBMQVLQEIIC-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 description 1
- ZBJLUVHQIPUCPM-UHFFFAOYSA-N 1-phenylbenzotriazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=N1 ZBJLUVHQIPUCPM-UHFFFAOYSA-N 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- QQLILYBIARWEIF-UHFFFAOYSA-N 2-(2-hydroxyethylsulfonyl)ethanol Chemical compound OCCS(=O)(=O)CCO QQLILYBIARWEIF-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- CZHBXDSQJOQIHE-UHFFFAOYSA-N 2-(benzotriazol-1-yl)ethane-1,1-diol Chemical compound C1=CC=C2N(CC(O)O)N=NC2=C1 CZHBXDSQJOQIHE-UHFFFAOYSA-N 0.000 description 1
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- KZTWONRVIPPDKH-UHFFFAOYSA-N 2-(piperidin-1-yl)ethanol Chemical compound OCCN1CCCCC1 KZTWONRVIPPDKH-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 description 1
- XUDUTRMKKYUAKI-UHFFFAOYSA-N 3-[1-(1-phenylethyl)piperidin-4-yl]-1h-benzimidazol-2-one Chemical compound C1CC(N2C(NC3=CC=CC=C32)=O)CCN1C(C)C1=CC=CC=C1 XUDUTRMKKYUAKI-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- MVPKIPGHRNIOPT-UHFFFAOYSA-N 5,6-dimethyl-2h-benzotriazole Chemical compound C1=C(C)C(C)=CC2=NNN=C21 MVPKIPGHRNIOPT-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 description 1
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 1
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- 241001024304 Mino Species 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- JCXKHYLLVKZPKE-UHFFFAOYSA-N benzotriazol-1-amine Chemical compound C1=CC=C2N(N)N=NC2=C1 JCXKHYLLVKZPKE-UHFFFAOYSA-N 0.000 description 1
- MXJIHEXYGRXHGP-UHFFFAOYSA-N benzotriazol-1-ylmethanol Chemical compound C1=CC=C2N(CO)N=NC2=C1 MXJIHEXYGRXHGP-UHFFFAOYSA-N 0.000 description 1
- VEZXCJBBBCKRPI-UHFFFAOYSA-N beta-propiolactone Chemical compound O=C1CCO1 VEZXCJBBBCKRPI-UHFFFAOYSA-N 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229960005150 glycerol Drugs 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 150000008624 imidazolidinones Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- DLEZVOPJBSAAGW-UHFFFAOYSA-N methyl benzotriazole-1-carboxylate Chemical compound C1=CC=C2N(C(=O)OC)N=NC2=C1 DLEZVOPJBSAAGW-UHFFFAOYSA-N 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- VMESOKCXSYNAKD-UHFFFAOYSA-N n,n-dimethylhydroxylamine Chemical compound CN(C)O VMESOKCXSYNAKD-UHFFFAOYSA-N 0.000 description 1
- XVHLHUNZWRKZPF-UHFFFAOYSA-N n-[(4-methylbenzotriazol-1-yl)methyl]-n-propan-2-ylpropan-2-amine Chemical compound C1=CC=C2N(CN(C(C)C)C(C)C)N=NC2=C1C XVHLHUNZWRKZPF-UHFFFAOYSA-N 0.000 description 1
- RUFMRRIYNIOMBR-UHFFFAOYSA-N n-ethyl-n-[(4-methylbenzotriazol-1-yl)methyl]ethanamine Chemical compound C1=CC=C2N(CN(CC)CC)N=NC2=C1C RUFMRRIYNIOMBR-UHFFFAOYSA-N 0.000 description 1
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 1
- CPQCSJYYDADLCZ-UHFFFAOYSA-N n-methylhydroxylamine Chemical compound CNO CPQCSJYYDADLCZ-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- WCVRQHFDJLLWFE-UHFFFAOYSA-N pentane-1,2-diol Chemical compound CCCC(O)CO WCVRQHFDJLLWFE-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000004963 sulfonylalkyl group Chemical group 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
本発明のホトレジスト用剥離液は、(a)フッ化水素酸と金属イオンを含まない塩基との塩、および(b)水溶性有機溶媒を含有してなり、前記(a)成分の含有率が0.001〜0.1質量%であることを特徴とする。本発明のホトレジスト用剥離液は、フッ化水素酸と金属イオンを含まない塩基との塩の含有率を0.001〜0.1質量%とすることにより、Cu/low−k基板における低誘電体膜、特によりポーラス化が進んだ低誘電体膜にも用いることができ、ホトレジストやアッシング後の残渣物の剥離性に優れるばかりでなく、低誘電体膜の受ける損傷を低減することができる。
前記(a)成分の含有率は、0.06質量%以下とすることが、さらに低誘電体膜への損傷を抑制することができる点から好ましい。
ジメチルスルホン、ジエチルスルホン、ビス(2−ヒドロキシエチル)スルホン、テトラメチレンスルホン等のスルホン類;
N,N−ジメチルホルムアミド、N−メチルホルムアミド、N,N−ジメチルアセトアミド、N−メチルアセトアミド、N,N−ジエチルアセトアミド等のアミド類;
N−メチル−2−ピロリドン、N−エチル−2−ピロリドン、N −プロピル−2−ピロリドン、N−ヒドロキシメチル− 2−ピロリドン、N−ヒドロキシエチル−2−ピロリドン等のラクタム類;
1,3−ジメチル−2−イミダゾリジノン、1,3−ジエチル−2−イミダゾリジノン、1,3−ジイソプロピル−2−イミダゾリジノン等のイミダゾリジノン類;
γ−ブチロラクトン、β−プロピオラクトン、γ−バレロラクトン、δ−バレロラクトン、γ−カプロラクトン、ε−カプロラクトン等のラクトン類;
エチレングリコール、プロピレングリコール、ブチレングリコール、ペンチレングリコール、ヘキシレングリコール、およびグリセリン等の多価アルコール類;
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル等の多価アルコール類の誘導体などが挙げられる。
(ii)露光により酸を発生する化合物、酸により分解しアルカリ水溶液に対する溶解性が増大する化合物およびアルカリ可溶性樹脂を含有するポジ型ホトレジスト、
(iii)露光により酸を発生する化合物、酸により分解しアルカリ水溶液に対する溶解性が増大する基を有するアルカリ可溶性樹脂を含有するポジ型ホトレジスト、および
(iv)光により酸を発生する化合物、架橋剤およびアルカリ可溶性樹脂を含有するネガ型ホトレジスト等が挙げられるが、これらに限定されるものではない。
本発明のホトレジスト用剥離液である剥離液1〜5を下記の表1に示すように、(a)成分としてフッ化アンモニウム(NH4F)、(b)成分としてγ−ブチロラクトンを70質量%、(d)成分として1−チオグリセロールを0.05質量%、3−メルカプトプロピオン酸を0.09質量%、その他の成分としてアセチレノールを0.1質量%、(c)成分として水を残量部の組成で混合し調製した。なお、(a)成分のフッ化アンモニウムは、0.03、0.04、0.05、0.06および0.07質量%配合し、それぞれ、剥離液1〜5とした。
本発明のホトレジスト用剥離液である洗浄液6〜10を下記の表1に示すように、(a)成分としてフッ化アンモニウム(NH4F)、(b)成分としてプロピレングリコール(PG)を50質量%、(d)成分として1−チオグリセロールを0.05質量%、その他の成分としてアセチレノールを0.1質量%、(c)成分として水を残量部の組成で混合し調製した。なお、(a)成分のフッ化アンモニウムは、0.03、0.04、0.05、0.06および0.07質量%配合し、それぞれ、洗浄液6〜10とした。
また、比較例用の剥離液として剥離液11を表1に示すように、(a)成分としてフッ化アンモニウム(NH4F)を0.05質量%、(b)成分としてγ−ブチロラクトンを95質量%、(d)成分として1−チオグリセロールを0.05質量%、その他の成分としてアセチレノールを0.1質量%、(c)成分として水を残量部の組成で混合し調製した。
さらに、比較例用の剥離液として剥離液12を表1に示すように、(a)成分としてフッ化アンモニウム(NH4F)を0.15質量%、(b)成分としてγ−ブチロラクトンを85質量%、(d)成分として1−チオグリセロールを0.05質量%、その他の成分としてアセチレノールを0.1質量%、(c)成分として水を残量部の組成で混合し調製した。
BPSGが塗膜された基板をナノスペックにて膜厚の測定を行った後、高温槽で40℃に安定させたホトレジスト用剥離液中で30分間の浸漬処理を行った。浸漬処理後、純水にてリンスをした後、再度ナノスペックにて膜厚の測定を行い、前後の膜厚差(Å)を確認し、BPSGエッチング量の指標とした。ホトレジスト用剥離液としては、上記調製例のように調製した剥離液1〜12を用い、膜厚差(Å)の結果をBPSGエッチング量(Å)として表2に示した。また、(a)成分のフッ化アンモニウム(NH4F)の配合量(質量%)を横軸、BPSGエッチング量(Å)を縦軸にとり作成したグラフを図1に示した。
シリコンウェーハ上にCu層を設け、その上にプラズマCVDによりSiO2層を形成した基板上に、ポジ型ホトレジストであるTDUR−P015PM(東京応化工業株式会社製)をスピンナーで塗布し、80℃にて90秒間プリベークを施し、膜厚0.7μmのホトレジスト層を形成した。
Claims (11)
- (a)フッ化水素酸と金属イオンを含まない塩基との塩、および(b)水溶性有機溶媒を含有してなり、前記(a)成分の含有率が0.001〜0.1質量%であり、前記水溶性有機溶媒がプロピレングリコールであるホトレジスト用剥離液。
- 前記(a)成分の含有率が0.001〜0.06質量%であることを特徴とする請求項1に記載のホトレジスト用剥離液。
- さらに(c)水、および(d)防食剤を含有することを特徴とする請求項1または2に記載のホトレジスト用剥離液。
- 前記防食剤が、メルカプト基含有化合物およびベンゾトリアゾール系化合物の中から選ばれる少なくとも1種であることを特徴とする請求項3に記載のホトレジスト用剥離液。
- 前記メルカプト基含有化合物が、メルカプト基に結合する炭素原子のα位、β位の少なくとも一方に、水酸基および/またはカルボキシル基を有する構造の化合物であることを特徴とする請求項4に記載のホトレジスト用剥離液。
- 前記メルカプト基含有化合物が、1−チオグリセロール、2−メルカプトエタノール、3−(2−アミノフェニルチオ)−2−ヒドロキシプロピルメルカプタン、3−(2−ヒドロキシエチルチオ)−2−ヒドロキシプロピルメルカプタン、2−メルカプトプロピオン酸、および3−メルカプトプロピオン酸の中から選ばれる少なくとも1種であることを特徴とする請求項4または5に記載のホトレジスト用剥離液。
- 前記ベンゾトリアゾール系化合物が、1−(2,3−ジヒドロキシプロピル)−ベンゾトリアゾール、2,2'−{[(4−メチル−1H−ベンゾトリアゾール−1−イル)メチル]イミノ}ビスエタノール、2,2'−{[(5−メチル−1H−ベンゾトリアゾール−1−イル)メチル]イミノ}ビスエタノールの中から選ばれる少なくとも1種であることを特徴とする請求項4に記載のホトレジスト用剥離液。
- 前記(b)成分の含有率が20〜90質量%であり、(c)成分の含有率が10〜80質量%であり、(d)成分の含有率が0.01〜10質量%であることを特徴とする請求項3から7のいずれか1項に記載のホトレジスト用剥離液。
- 前記(a)成分がフッ化アンモニウムであることを特徴とする請求項1から8のいずれか1項に記載のホトレジスト用剥離液。
- 誘電率が2.7以下の低誘電率材料からなる低誘電体膜を含む基板の洗浄処理に用いることを特徴とする請求項1から9のいずれか1項に記載のホトレジスト用剥離液。
- 基板上にホトレジスト膜を形成し、露光処理し、現像処理を施したのち、該ホトレジストパターンをマスクパターンとしてエッチング処理を行い、さらにアッシング処理を施した基板に対して、前記請求項1から10のいずれか一項に記載のホトレジスト用剥離液を接触させることを特徴とした基板の処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004271945A JP4463054B2 (ja) | 2004-09-17 | 2004-09-17 | ホトレジスト用剥離液およびこれを用いた基板の処理方法 |
US11/228,278 US20060063688A1 (en) | 2004-09-17 | 2005-09-19 | Photoresist stripping solution and method of treating substrate with the same |
US11/645,172 US20070105035A1 (en) | 2004-09-17 | 2006-12-26 | Photoresist stripping solution and method of treating substrate with the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004271945A JP4463054B2 (ja) | 2004-09-17 | 2004-09-17 | ホトレジスト用剥離液およびこれを用いた基板の処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006085017A JP2006085017A (ja) | 2006-03-30 |
JP4463054B2 true JP4463054B2 (ja) | 2010-05-12 |
Family
ID=36074813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004271945A Expired - Lifetime JP4463054B2 (ja) | 2004-09-17 | 2004-09-17 | ホトレジスト用剥離液およびこれを用いた基板の処理方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US20060063688A1 (ja) |
JP (1) | JP4463054B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101798090B1 (ko) | 2013-11-18 | 2017-11-15 | 후지필름 가부시키가이샤 | 반도체 기판의 처리액, 처리 방법, 이들을 이용한 반도체 기판 제품의 제조 방법 |
KR101804850B1 (ko) | 2013-11-18 | 2017-12-05 | 후지필름 가부시키가이샤 | 변성 레지스트의 박리 방법, 이것에 이용하는 변성 레지스트의 박리액 및 반도체 기판 제품의 제조 방법 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
JP5046639B2 (ja) * | 2006-08-23 | 2012-10-10 | 富士フイルム株式会社 | カラーフィルタの製造方法 |
US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
JP5203637B2 (ja) * | 2007-05-07 | 2013-06-05 | イー.ケー.シー.テクノロジー.インコーポレーテッド | レジスト、エッチング残渣、及び金属酸化物をアルミニウム及びアルミニウム銅合金を有する基板から除去する方法及び組成物 |
US8449681B2 (en) * | 2010-12-16 | 2013-05-28 | Intermolecular, Inc. | Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate |
KR101321029B1 (ko) | 2011-06-29 | 2013-10-28 | 주식회사 엘지화학 | 부식 방지제를 포함하는 포토레지스트 제거용 조성물 |
KR102021158B1 (ko) * | 2012-06-26 | 2019-09-11 | 노무라마이크로사이엔스가부시키가이샤 | 레지스트 박리제 |
US9536730B2 (en) * | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
KR102281189B1 (ko) * | 2015-03-10 | 2021-07-23 | 동우 화인켐 주식회사 | 구리계 금속막 식각액 조성물 및 이를 이용한 식각방법 |
US10894935B2 (en) | 2015-12-04 | 2021-01-19 | Samsung Electronics Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
CN107034028B (zh) * | 2015-12-04 | 2021-05-25 | 三星电子株式会社 | 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 |
CN109809709B (zh) * | 2017-11-22 | 2021-11-23 | 蓝思科技(长沙)有限公司 | 一种退镀液和2d蓝宝石玻璃退除ncvm的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3410403B2 (ja) * | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
JP2001100436A (ja) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
KR100550505B1 (ko) * | 2001-03-01 | 2006-02-13 | 가부시끼가이샤 도시바 | 반도체 장치 및 반도체 장치의 제조 방법 |
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
TWI297102B (en) * | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP3820545B2 (ja) * | 2001-12-04 | 2006-09-13 | ソニー株式会社 | レジスト剥離用組成物及びそれを用いた半導体装置の製造方法 |
JP2004029276A (ja) * | 2002-06-25 | 2004-01-29 | Mitsubishi Gas Chem Co Inc | 銅配線基板向け含フッ素レジスト剥離液 |
-
2004
- 2004-09-17 JP JP2004271945A patent/JP4463054B2/ja not_active Expired - Lifetime
-
2005
- 2005-09-19 US US11/228,278 patent/US20060063688A1/en not_active Abandoned
-
2006
- 2006-12-26 US US11/645,172 patent/US20070105035A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101798090B1 (ko) | 2013-11-18 | 2017-11-15 | 후지필름 가부시키가이샤 | 반도체 기판의 처리액, 처리 방법, 이들을 이용한 반도체 기판 제품의 제조 방법 |
KR101804850B1 (ko) | 2013-11-18 | 2017-12-05 | 후지필름 가부시키가이샤 | 변성 레지스트의 박리 방법, 이것에 이용하는 변성 레지스트의 박리액 및 반도체 기판 제품의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20070105035A1 (en) | 2007-05-10 |
US20060063688A1 (en) | 2006-03-23 |
JP2006085017A (ja) | 2006-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3403187B2 (ja) | ホトレジスト用剥離液 | |
JP3516446B2 (ja) | ホトレジスト剥離方法 | |
JP3410403B2 (ja) | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 | |
US8697345B2 (en) | Photoresist stripping solution and a method of stripping photoresists using the same | |
JP3606738B2 (ja) | アッシング後の処理液およびこれを用いた処理方法 | |
KR100503702B1 (ko) | 포토레지스트용 박리액 및 이를 사용한 포토레지스트박리방법 | |
US20070105035A1 (en) | Photoresist stripping solution and method of treating substrate with the same | |
JP3514435B2 (ja) | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 | |
JP3738992B2 (ja) | ホトレジスト用剥離液 | |
JP3389166B2 (ja) | レジスト用剥離液組成物 | |
JP2002357908A (ja) | ホトレジスト用剥離液 | |
JP2006343604A (ja) | ホトリソグラフィ用洗浄液およびこれを用いた基板の処理方法 | |
JP4229552B2 (ja) | ホトレジスト用剥離液組成物およびこれを用いたホトレジスト剥離方法 | |
JP3976160B2 (ja) | アッシング後の処理液およびこれを用いた処理方法 | |
JP2000056480A (ja) | レジスト用剥離液組成物およびこれを用いたレジスト剥離方法 | |
JP2000162788A (ja) | 銅配線形成基板に用いるホトレジスト用剥離液組成物およびこれを用いたレジスト剥離方法 | |
JP4442817B2 (ja) | ホトレジスト用剥離液 | |
JP2000338685A (ja) | アッシング後の処理液組成物およびこれを用いた処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20060130 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060210 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070614 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091013 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100216 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100216 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130226 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4463054 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140226 Year of fee payment: 4 |