CN107034028B - 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 - Google Patents

用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 Download PDF

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CN107034028B
CN107034028B CN201611111478.7A CN201611111478A CN107034028B CN 107034028 B CN107034028 B CN 107034028B CN 201611111478 A CN201611111478 A CN 201611111478A CN 107034028 B CN107034028 B CN 107034028B
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substrate
composition
silicone
solvent
silicone adhesive
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CN107034028A (zh
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姜仁求
金圣培
崔百洵
金秀莲
洪荣泽
金相泰
李京浩
洪亨杓
金成民
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Dongwoo Fine Chem Co Ltd
Samsung Electronics Co Ltd
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Dongwoo Fine Chem Co Ltd
Samsung Electronics Co Ltd
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    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
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Abstract

本文中公开用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统。更特别地，本文中公开的是用于除去有机硅树脂的组合物，所述组合物包括杂环溶剂和由式(R)4N+F‑表示的氟化烷基铵盐，其中R为C1‑C4直链烷基。通过使用所述组合物可有效地除去有机硅树脂，因为所述组合物对于在半导体基材的背面研磨、背面电极形成等工艺中残留在半导体基材上的有机硅树脂呈现优异的分解速率。

Description

用于除去有机硅树脂的组合物、使用其薄化基材和制造半导 体封装体的方法及使用其的系统
对相关申请的交叉引用
本申请要求在韩国知识产权局于2015年12月4日提交的韩国专利申请No.10-2015-0172656的权益，其公开内容全部引入本文中作为参考。
技术领域
本公开内容涉及用于除去有机硅树脂的组合物和使用其薄化(减薄，修磨)基材的方法，和更特别地，涉及利用它可有效地除去残留在半导体基材上的有机硅树脂的用于除去有机硅树脂的组合物、和使用其薄化基材的方法。
背景技术
在半导体器件的制造工艺中，在半导体基材的表面上形成电子电路之后，在一些情况中可进行薄化工艺以减小半导体基材的厚度。在这些情况中，为了保护半导体基材的电路表面和充分地固定半导体基材，通过使用有机硅树脂将半导体基材附着到载体基材。在薄化工艺完成之后，当将载体基材与半导体基材分离时，有机硅树脂可残留在半导体基材的活性表面上。存在对于用于有效地除去残余有机硅树脂的组合物和方法的需要以及使用所述组合物薄化基材的方法的需要。
发明内容
本公开内容提供用于除去有机硅树脂的组合物，利用它可有效地除去残留在半导体基材上的有机硅树脂。
本公开内容还提供薄化基材的方法，利用它可有效地除去残留在半导体基材上的有机硅树脂。
本公开内容还提供使用用于除去有机硅树脂的组合物之一制造半导体封装体(封装，包装体，package)的方法。
根据本公开内容的一个方面，提供用于除去有机硅树脂的组合物，所述组合物包括杂环溶剂和由式(1)表示的氟化烷基铵盐：
(R)4N+F- 式(1)
其中R为C1-C4直链烷基。
根据本公开内容的另一方面，提供薄化基材的方法，所述方法包括：通过使用有机硅粘合剂将载体基材附着到意图薄化的靶(目标)基材；薄化靶基材；将载体基材和靶基材彼此分离；和通过使用用于除去有机硅树脂的组合物清洁靶基材以除去残留在靶基材上的有机硅粘合剂。这里，用于除去有机硅树脂的组合物包括含氮杂环溶剂和含氟化合物。
根据本公开内容的再一方面，提供制造半导体封装体的方法，所述方法包括：提供器件基材，其包括半导体基材、形成于半导体基材的活性表面上的半导体器件、和电连接到半导体器件的贯通电极，贯通电极朝着半导体基材的与活性表面相反的表面延伸；经由有机硅粘合剂的中间层将载体基材结合到器件基材的活性表面；薄化器件基材的与其活性表面相反的表面使得暴露贯通电极；将器件基材从载体基材分离；和使器件基材与用于除去有机硅树脂的组合物接触以除去残留在器件基材的活性表面上的有机硅粘合剂的残余物，其中用于除去有机硅树脂的组合物包括杂环溶剂和由式(1)表示的氟化烷基铵盐。
根据本公开内容的还一方面，提供用于除去有机硅树脂的组合物，其可包括：约70重量％-约99.9重量％的含氮杂环溶剂；和约0.1重量％-约30重量％的氟化烷基铵盐，基于组合物的总重量。
根据本公开内容的又一方面，提供用于将靶基材暂时结合到载体基材以促进靶基材的加工的系统，所述系统包括：载体基材；配置成将载体基材结合到靶基材的有机硅粘合剂；配置成将载体基材和靶基材相互分离使得有机硅粘合剂的残余物残留在靶基材上的分离装置；和配置成除去残余物的组合物，其中组合物包括杂环溶剂和由式(1)表示的氟化烷基铵盐：
(R)4N+F- 式(1)
其中R为C1-C4直链烷基。
在一种实施方式中，所述有机硅粘合剂包括配置成接触靶基材的有机硅脱模层；和设置在有机硅脱模层上并且接触载体基材的有机硅粘着层。
附图说明
由结合如下所列的附图考虑的以下详细描述，将更清楚地理解组合物、方法、和系统的实施方式。
图1为根据一种实施方式的通过使用用于除去有机硅树脂的组合物薄化基材的方法的流程图，所述流程图显示进行所述方法的顺序。
图2A-2D为根据图1的薄化方法的阶段显示的基材的侧视截面图。
图3A-3C为用于说明根据另一实施方式的薄化靶基材的方法的侧视截面图。
图4A-4C为用于说明根据再一实施方式的薄化靶基材的方法的侧视截面图。
图5A-5I为按照根据一种实施方式的制造半导体封装体的方法的进行顺序显示的半导体封装体的侧视截面图。
图6为更详细地显示图5A的器件基材的结构的部分放大视图。
图7为描述有机硅粘着层的残余物残留的多种原因之一的侧视截面图。
图8A-8G为按照根据另一实施方式的制造半导体封装体的方法的进行相继顺序显示的侧视截面图。
图9和10示意性地说明根据一些实施方式的分离装置。
具体实施方式
根据一种实施方式，用于除去有机硅树脂的组合物可包括杂环溶剂和氟化烷基铵盐。
氟化烷基铵盐可具有例如由式(1)表示的结构：
(R)4N+F- 式(1)
其中R为C1-C4直链烷基。
由式(1)表示的化合物可包括选自如下的至少一种：氟化四甲基铵、氟化四乙基铵、氟化四丁基铵、及其组合。可使用单一类型的氟化烷基铵盐如氟化四丁基铵或者可将多种类型组合使用。
杂环溶剂可为在环中包括至少一个杂原子的环状化合物。在一些实施方式中，杂环溶剂中包括的至少一个杂原子可为氮或氧。在一些实施方式中，杂环溶剂的环可为4-8元环。
杂环溶剂可包括选自如下的至少一种：吡啶溶剂、吗啉溶剂、哌嗪溶剂、吡咯烷酮溶剂、脲溶剂、
Figure BDA0001172588030000041
唑烷酮溶剂、及其组合。然而，本发明构思不限于此。
吡啶溶剂可具有由式(2)表示的结构：
Figure BDA0001172588030000042
其中R1、R2、和R3各自可为氢、卤族元素、C1-C22支化或非支化的烷基、C1-C10烷氧基、C2-C22支化或非支化的烯基、C1-C20烷基氨基、C6-C20芳基、C7-C20芳烷基或烷芳基、C5-C12环烷基、醛基、乙醛基、氰基、或甲硫基。
吡啶溶剂可包括例如选自如下的至少一种：吡啶、2-甲基吡啶、3-甲基吡啶、4-甲基吡啶、4-乙基吡啶、4-丙基吡啶、4-异丙基吡啶、4-戊基吡啶、2,3-二甲基吡啶、2,4-二甲基吡啶、2,5-二甲基吡啶、3,4-二甲基吡啶、3,5-二甲基吡啶、2,4,6-三甲基吡啶、及其组合。然而，本发明构思不限于此。
吗啉溶剂可具有由式(3)表示的结构：
Figure BDA0001172588030000043
其中R4可为氢、卤族元素、C1-C6支化或非支化的烷基、C1-C6烷氧基、C2-C6支化或非支化的烯基、C1-C6烷基氨基、C6-C15芳基、C7-C15芳烷基或烷芳基、C5-C15杂芳基、C5-C10环烷基、醛基、乙醛基、氰基、或甲硫基。任选地，R4可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的苯基。任选地，R4可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的吡啶基团。
哌嗪溶剂可具有由式(4)表示的结构：
Figure BDA0001172588030000051
其中R5和R6各自可为氢、卤族元素、C1-C6支化或非支化的烷基、C1-C6烷氧基、C2-C6支化或非支化的烯基、C1-C6烷基氨基、C6-C15芳基、C7-C15芳烷基或烷芳基、C5-C15杂芳基、C5-C10环烷基、醛基、乙醛基、氰基、或甲硫基。任选地，R5或R6可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的苯基。任选地，R5或R6可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的吡啶基团。
吡咯烷酮溶剂可具有由式(5)表示的结构：
Figure BDA0001172588030000052
其中R7可为氢、卤族元素、C1-C6支化或非支化的烷基、C1-C6烷氧基、C2-C6支化或非支化的烯基、C1-C6烷基氨基、C6-C15芳基、C7-C15芳烷基或烷芳基、C5-C15杂芳基、C5-C10环烷基、醛基、乙醛基、氰基、或甲硫基。任选地，R7可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的苯基。任选地，R7可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的吡啶基团。
吡咯烷酮溶剂可包括例如选自如下的至少一种：N-甲基吡咯烷酮(NMP)、N-乙基吡咯烷酮(NEP)、2-吡咯烷酮、N-乙烯基吡咯烷酮(NVP)、及其组合。然而，本发明构思不限于此。
脲溶剂可具有由式(6)表示的结构：
Figure BDA0001172588030000053
其中R8和R9各自可为氢、卤族元素、C1-C6支化或非支化的烷基、C1-C6烷氧基、C2-C6支化或非支化的烯基、C1-C6烷基氨基、C6-C15芳基、C7-C15芳烷基或烷芳基、C5-C15杂芳基、C5-C10环烷基、醛基、乙醛基、氰基、或甲硫基。任选地，R8或R9可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的吡啶基团。
Figure BDA0001172588030000061
唑烷酮溶剂可具有由式(7)表示的结构：
Figure BDA0001172588030000062
其中R10可为氢、卤族元素、C1-C6支化或非支化的烷基、C1-C6烷氧基、C2-C6支化或非支化的烯基、C1-C6烷基氨基、C6-C15芳基、C7-C15芳烷基或烷芳基、C5-C15杂芳基、C5-C10环烷基、醛基、乙醛基、氰基、或甲硫基。任选地，R10可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的苯基。任选地，R10可为被C1-C4脂族烃基、卤族元素、氰基、或醛基取代的吡啶基团。
在用于除去有机硅树脂的组合物中，氟化烷基铵盐可以基于所述组合物的总重量的约0.1重量％-约30重量％的量存在。在一种实施方式中，氟化烷基铵盐的量可范围为约1重量％-约20重量％。如果氟化烷基铵盐的量太高，则组合物的水含量可随时间而增加，并且存在如下担心：组合物在除去有机硅树脂方面可呈现恶化的性能，且暴露于组合物的基材的电路表面上的金属可遭受腐蚀。另一方面，如果氟化烷基铵盐的量太低，则组合物可无法有效地除去有机硅树脂。这些因素通过以基于组合物的总重量的约0.1重量％-约30重量％的量使用氟化烷基铵盐而得以平衡。
在用于除去有机硅树脂的组合物中，杂环溶剂可以基于所述组合物的总重量的约70重量％-约99.9重量％的量存在。在一些实施方式中，杂环溶剂的量可范围为约80重量％-约99重量％、约90重量％-约99重量％、约90重量％-约97重量％、或约94重量％-约97重量％。然而，如果杂环溶剂的量太高，则组合物可无法有效地除去附着到电子部件的有机硅树脂。另一方面，如果杂环溶剂的量太低，则基材的电路表面上的金属可遭受腐蚀。这些因素通过以基于组合物的总重量的约70重量％-约99.9重量％的量使用杂环溶剂而得以平衡。
在一些实施方式中，用于除去有机硅树脂的组合物可进一步包括腐蚀抑制剂。在用于除去有机硅树脂的组合物中，腐蚀抑制剂可以基于所述组合物的总重量的约0.01重量％-约6重量％的量存在。合适的腐蚀抑制剂的实例可具体包括：唑化合物如苯并三唑、甲苯基三唑、甲基甲苯基三唑、2,2'-[[[苯并三唑]甲基]亚氨基]双乙醇、[[[甲基-1H-苯并三唑-1-基]甲基]亚氨基]双甲醇、2,2'-[[[乙基-1H-苯并三唑-1-基]甲基]亚氨基]双乙醇、2,2'-[[[甲基-1H-苯并三唑-1-基]甲基]亚氨基]双乙醇、[[[甲基-1H-苯并三唑-1-基]甲基]亚氨基]双羧酸、[[[甲基-1H-苯并三唑-1-基]甲基]亚氨基]双甲基胺、和2,2'-[[[胺-1H-苯并三唑-1-基]甲基]亚氨基]双乙醇；醌化合物如1,2-苯醌、1,4-苯醌、1,4-萘醌、和蒽醌；邻苯二酚、连苯三酚、没食子酸和没食子酸烷基酯如没食子酸甲酯、没食子酸丙酯、没食子酸十二烷基酯、和没食子酸辛酯；有机酸酰胺酯如琥珀酰胺酯、苹果酰胺酯、马来酰胺酯、富马酰胺酯、草酰胺酯、丙二酰胺酯、戊二酰胺酯、乙酰胺酯、乳酰胺酯、柠檬酰胺酯、酒石酰胺酯、羟基乙酰胺酯、甲酰胺酯、和尿酰胺酯等。这些化合物可单独或组合使用。
在一些实施方式中，用于除去有机硅树脂的组合物可进一步包括表面活性剂。表面活性剂可为如下的一种或多种：非离子表面活性剂、阳离子表面活性剂、阴离子表面活性剂、两性表面活性剂等、或其任意组合。在用于除去有机硅树脂的组合物中，表面活性剂可以基于所述组合物的总重量的约0.01重量％-约1重量％的量存在。
合适的非离子表面活性剂的实例可包括：聚氧乙烯烷基醚如聚氧乙烯月桂基醚、和聚氧乙烯硬脂基醚；聚氧乙烯烷基苯基醚如聚氧乙烯辛基苯基醚、和聚氧乙烯壬基苯基醚；脱水山梨糖醇高级脂肪酸酯如脱水山梨糖醇单月桂酸酯、脱水山梨糖醇单硬脂酸酯、和脱水山梨糖醇三油酸酯；聚氧乙烯脱水山梨糖醇高级脂肪酸酯如聚氧乙烯脱水山梨糖醇单月桂酸酯；聚氧乙烯高级脂肪酸酯如聚氧乙烯单硬脂酸酯、和聚氧乙烯单硬脂酸酯；甘油高级脂肪酸酯如甘油单油酸酯、和甘油单硬脂酸酯；聚氧化烯如聚氧乙烯、聚氧丙烯、和聚氧丁烯；和其嵌段共聚物。
合适的阳离子表面活性剂的实例可包括氯化烷基三甲基铵、氯化二烷基二甲基铵、苯扎氯铵盐、烷基二甲基铵乙基硫酸盐等。
合适的阴离子表面活性剂的实例可包括：羧酸盐如月桂酸钠、油酸钠、N-酰基-N-甲基甘氨酸的钠盐、和聚氧乙烯月桂基醚羧酸钠；磺酸盐如十二烷基苯磺酸钠、磺基琥珀酸二烷基酯的盐、和5-磺基间苯二甲酸二甲酯钠；硫酸酯盐如月桂基硫酸钠、聚氧乙烯月桂基醚硫酸钠、和聚氧乙烯壬基苯基醚硫酸钠；磷酸酯盐如聚氧乙烯月桂基磷酸钠、和聚氧乙烯壬基苯基醚磷酸钠等。
合适的两性表面活性剂的实例可包括羧基甜菜碱型表面活性剂、氨基羧酸盐、咪唑啉甜菜碱、卵磷脂、和烷基胺氧化物。
在下文中，将描述使用如上阐述的用于除去有机硅树脂的组合物薄化基材的方法。
图1为根据进行顺序显示的薄化方法的流程图。图2A-2D为根据薄化方法的阶段显示的基材的侧视截面图。
参照图1和2A，将载体基材130附着到意图薄化的靶基材110(S100)。可使用有机硅粘合剂120将靶基材110和载体基材130彼此附着。
靶基材110可包括例如元素半导体如Si或Ge，或化合物半导体如SiGe、SiC、GaAs、InAs、或InP。在一些实施方式中，靶基材110可包括III-V族材料、IV族材料、或二者的组合。III-V族材料可为包括至少一个III族原子和至少一个V族原子的二元、三元、或四元化合物。III-V族材料可为包括作为III族原子的至少一个原子如In、Ga、或Al和作为V族原子的至少一个原子如As、P、或Sb的化合物。例如，III-V族材料可从如下之中选择：InP、InzGa1- zAs(其中z为在0和1之间的任意数)、AlzGa1-zAs(其中z为在0和1之间的任意数)等。二元化合物可为例如InP、GaAs、InAs、InSb、和GaSb之一。三元化合物可为InGaP、InGaAs、AlInAs、InGaSb、GaAsSb、和GaAsP之一。IV族材料可为Si或Ge。在另一实施方式中，靶基材110可具有绝缘体上硅(SOI)结构。
载体基材130可具有足以在靶基材110被处理和薄化时支撑靶基材110的厚度和强度。载体基材130可包括例如硅(例如，空白器件晶片)、钠钙玻璃、硼硅酸盐玻璃、碳化硅、硅锗、氮化硅、砷化镓、蓝宝石、各种金属或陶瓷等、或其任意组合。然而，本发明构思不限于此。
有机硅粘合剂120可为例如聚硅氧烷化合物，且可以充足的强度将载体基材130结合到靶基材110。在一些实施方式中，有机硅粘合剂120可具有两种或更多种组分。有机硅粘合剂120可包括单一材料层、或者两个或更多个材料层的堆叠层。
尽管图2A显示，首先在靶基材110上形成有机硅粘合剂120的层，随后将载体基材130附着到有机硅粘合剂120的层上，但是本发明构思不限于此。在一些实施方式中，可首先在载体基材130上形成有机硅粘合剂120的层，随后将靶基材110附着到有机硅粘合剂120的层上。在另一实施方式中，可在靶基材110上形成有机硅粘合剂120的第一层且可在载体基材130上形成有机硅粘合剂120的第二层。此后，可将有机硅粘合剂120的第一层和第二层附着在一起，由此将靶基材110结合到载体基材130。
当在靶基材110上形成有机硅粘合剂120时(或者当在载体基材130上形成有机硅粘合剂120时)，有机硅粘合剂120可具有使得其能够在靶基材110上(或者在载体基材130上)作为均匀厚度的层形成的一定的流动性。在将两个基材110、130彼此结合之后，可通过热、光等使有机硅粘合剂120固化。
当施加热以使有机硅粘合剂120固化时，可将有机硅粘合剂120加热至60℃或更高的温度。在一些实施方式中，可将有机硅粘合剂120加热至100℃或更高、150℃或更高、200℃或更高、或者220℃或更高的温度。在一些实施方式中，为了将靶基材110和载体基材130更牢固地彼此结合，可在加热有机硅粘合剂120的同时施加压力以将靶基材110和载体基材130压制在一起。参照图1和2B，在通过载体基材130支撑之后，使靶基材110经历薄化(S200)。薄化可持续直至靶基材110被薄化至期望的厚度。薄化可通过例如研磨、化学机械抛光(CMP)、各向异性蚀刻、旋转蚀刻、或各向同性蚀刻进行。然而，本发明构思不限于此。
如图2B中所示，薄化的靶基材110th可具有比初始提供的靶基材110薄的厚度。例如，薄化的靶基材110th可具有约200μm或更小、约100μm或更小、或者约25μm或更小的厚度。
参照图1和2C，将靶基材110th和载体基材130彼此分离(S300)。为了将靶基材110th和载体基材130彼此分离，可施加物理外力或热(例如，从如下讨论的分离装置)。当施加物理外力以将基材110th和130彼此分离时，在有机硅粘合剂120中可产生裂纹(破裂)。裂纹可由于通过叶片(例如，如示例性地示于图9的分离装置的叶片)施加至有机硅粘合剂120的冲击或其它合适的引发者(initiator)而产生。参照图9，分离装置可包括通过心轴90a可动地连接至切割机或发动机(未示出)的叶片900，心轴90a又配置成用叶片900以充足的力击打有机硅粘合剂120以在有机硅粘合剂120中产生裂纹。当靶基材110th和载体基材130由于热的施加而彼此分离时，可如示例性地示于图10中地提供分离装置(例如，作为布置在载体基材130下方的加热器1000，其是可操作的以发出热通过载体基材130和进入有机硅粘合剂120中)。当施加热以分离靶基材110th和载体基材130时，载体基材130可由具有适当地高的热导率的材料(例如，金属、陶瓷等)形成。一旦在有机硅粘合剂120中产生裂纹，靶基材110th和载体基材130便可由于裂纹的传播而彼此分离。
如图2C中所示，当将靶基材110th和载体基材130彼此分离时，有机硅粘合剂120的残余物120rsd可残留在靶基材110th的表面上。残余物120rsd可通过使用如上阐述的用于除去有机硅树脂的组合物除去。
参照图1和2D，为了除去残余物120rsd，可将用于除去有机硅树脂的组合物140提供到残余物120rsd上。用于除去有机硅树脂的组合物140可从靶基材110th的上侧例如通过喷嘴11供应到靶基材110th的表面，如图2D中所示。喷嘴11可连接到容纳组合物140的贮存器13的出口。如果使靶基材110th旋转(例如，通过支撑靶基材110th的台15)，则用于除去有机硅树脂的组合物140可由于离心力而在靶基材110th的表面上被涂覆至均匀的厚度。在一些实施方式中，可将靶基材110th浸入用于除去有机硅树脂的组合物140的浴中，由此除去残余物120rsd。由于组合物140对于有机硅树脂具有优异的分解速率，因此当根据公开的实施方式使用组合物140时，组合物140在例如半导体基材的背面研磨工艺、形成背面电极的工艺等工艺中提供对残留在半导体基材上的有机硅树脂的有效移除。
图3A-3C为用于说明根据另一实施方式的薄化靶基材110的方法的侧视截面图。在图3A中描绘的实施方式中，可在靶基材110上形成有机硅脱模层122，且可在有机硅脱模层122上形成有机硅粘着层124。
有机硅脱模层122可包括例如六甲基二硅氧烷(HMDSO)。六甲基二硅氧烷的有机硅脱模层122可通过例如化学气相沉积、原子层沉积等形成。在一些实施方式中，有机硅脱模层122可具有例如约10nm或更大、约30nm或更大、约50nm或更大、或约70nm或更大的厚度。在一些实施方式中，有机硅脱模层122可具有例如约500nm或更小、约400nm或更小、约300nm或更小、或约150nm或更小的厚度。
在一些实施方式中，有机硅脱模层122可包括例如加成型有机硅、缩合型有机硅、或能量射线可固化的有机硅。另外，为了调节有机硅脱模层122的剥离强度，有机硅脱模层122可进一步包括非官能的聚二甲基硅氧烷、苯基改性的有机硅、有机硅树脂、二氧化硅或纤维素化合物作为添加剂。这里，有机硅脱模层122可通过凹版印刷涂布、棒涂、喷涂、旋涂、气刀涂布、辊涂、刮涂、门辊涂布、模头涂布等形成。然而，本发明构思不限于此。
有机硅粘着层124可通过使用例如刷涂、空气喷涂、静电涂布、浸涂、旋涂、凹版印刷涂布、棒涂、幕涂、气刀涂布、辊涂、刮涂、门辊涂布、模头涂布等形成。有机硅粘着层124可包括例如聚二甲基硅氧烷、聚甲基苯基硅氧烷、聚乙基苯基硅氧烷等。在一些实施方式中，有机硅粘着层124可为包括能够通过聚合形成聚二甲基硅氧烷、聚甲基苯基硅氧烷、聚乙基苯基硅氧烷等的单体的材料层。另外，有机硅粘着层124可进一步包括容许通过从有机硅粘着层124的外部施加的能量引发聚合的引发剂。接着，可将载体基材130结合到有机硅粘着层124上。由于结合，载体基材130可牢固地连接到靶基材110。
在一些实施方式中，当向有机硅粘着层124施加能量如热或光时，有机硅粘着层124可通过聚合、除去溶剂等固化，由此将靶基材110和载体基材130坚固地彼此连接。
参照图3B，使靶基材110经历薄化。例如，靶基材110可如以上参照图2B示例性地描述地薄化。由于已经参照图2B描述了靶基材110的薄化，因此省略其重复描述。
有机硅脱模层122可直接接触薄化的靶基材110th的活性表面，如图3B中所示。另外，有机硅粘着层124可直接接触载体基材130。在一些实施方式中，有机硅脱模层122可不接触载体基材130。在一些实施方式中，有机硅粘着层124可部分地接触薄化的靶基材110th。(例如，因为有机硅脱模层122未作为相对于靶基材110的活性表面上的复杂形貌充分地共形的层形成)。将在下面详细地进行这个的描述。
可将图3B中所示的靶基材110th和载体基材130彼此分离。如果施加物理外力以将靶基材110th和载体基材130彼此分离，则靶基材110th和载体基材130可如图3C中所示沿着有机硅脱模层122彼此分离。然而，靶基材110th和载体基材130可彼此分离，同时有机硅脱模层122部分地残留在载体基材130上，或者同时有机硅粘着层124部分地残留在靶基材110th上。因此，尽管残留在靶基材110th的活性表面上的残余物122rsd的大部分得自于有机硅脱模层122，但是在靶基材110th的表面上可存在得自于有机硅粘着层124的残余物122rsd的一些。
接着，可根据如上阐述的公开内容通过使用用于除去有机硅树脂的组合物140除去残余物122rsd。由于已经参照图2D描述了这个的细节，因此省略其额外的描述。
图4A-4C为用于描述根据再一实施方式的薄化靶基材110的方法的侧视截面图。参照图4A，可在载体基材130上形成有机硅脱模层122，并且可在有机硅脱模层122上形成有机硅粘着层124。由于已经参照图3A详细地描述了有机硅脱模层122和有机硅粘着层124，因此省略其额外的描述。
可将靶基材110结合到有机硅粘着层124上，如图4A中的工艺中所示。参照图4B，使靶基材110经历薄化。例如，可如以上参照图2B示例性地描述地将靶基材110薄化。由于已经参照图2B描述了靶基材110的薄化，因此省略其重复描述。
这里，有机硅脱模层122可直接接触载体基材130，且有机硅粘着层124可直接接触薄化的靶基材110th。在一些实施方式中，有机硅粘着层124可部分地直接接触载体基材130。
参照图4C，可将靶基材110th和载体基材130彼此分离。如果施加物理外力以将靶基材110th和载体基材130彼此分离，则靶基材110th和载体基材130可沿着有机硅脱模层122彼此分离。然而，靶基材110th和载体基材130可彼此分离，同时有机硅脱模层122部分地残留在靶基材110th上，或者同时有机硅粘着层124部分地残留在载体基材130上。因此，尽管残留在靶基材110th的活性表面上的残余物122rsd的大部分得自有机硅粘着层124，但是在靶基材110th的活性表面上可存在得自于有机硅脱模层122的残余物122rsd的一些。
接着，可根据如上阐述的公开内容通过使用用于除去有机硅树脂的组合物140除去残余物122rsd。由于已经参照图2D描述了这个的细节，因此省略其额外的描述。
尽管本发明构思不限于任何具体原理，但是认为如上阐述的氟化烷基铵盐可用于降低有机硅粘合剂的树脂组分的分子量。
另外，尽管本发明构思不限于任何具体原理，但是认为如上阐述的杂环溶剂可用于使有机硅粘合剂的树脂组分膨胀和溶解由式(1)表示的氟化烷基铵盐。此外，当杂环溶剂为极性的非质子溶剂时，杂环溶剂的这样的溶解作用可更活跃地和稳定地进行，并且可通过使由于有机硅粘合剂的分解(其通过氟化烷基铵盐进行)产生的反应中间体稳定化而促进有机硅粘合剂的分解。
图5A-5I为按照根据本公开内容的一种实施方式的制造半导体封装体的方法的进行相继顺序显示的半导体封装体的侧视截面图。参照图5A，提供器件基材211。器件基材211可具有活性表面211a和背对着活性表面211a的相反表面211b。可在活性表面211a上形成很多半导体器件。另外，可在器件基材211内部提供贯通电极220。贯通电极220可电连接到半导体器件。贯通电极220可从活性表面211a朝着相反表面211b延伸。此外，可在贯通电极220的一侧上提供导电凸起230。图5B-5G在下面在图6的描述之后描述，且图5H-5I在下面在图7的描述之后描述。
图6为更详细地显示图5A的器件基材211的结构的部分放大视图。参照图6，可在半导体基材201的第一表面201a上形成半导体器件204a和层间电介质204b，由此形成电路层204。
半导体基材201可包括半导体晶片。例如，半导体基材201可包括IV族材料、III-V族化合物、II-VI族化合物半导体、或有机半导体材料。更具体地，半导体基材201可包括Si、SiC、SiGe、SiGeC、Ge合金、GaAs、InAs、InP、其它III-V族化合物半导体。另外，就形成方法而言，半导体基材201可由单晶晶片如硅单晶晶片形成。然而，半导体基材201不限于单晶晶片，且可由多种晶片如外延晶片、抛光的晶片、退火的晶片、绝缘体上硅(SOI)晶片等提供。这里，外延晶片指的是其中在单晶基材上生长结晶材料的晶片。
半导体基材201可具有第一表面201a和作为与第一表面201a相反的表面的第二表面201b。另外，半导体基材201的第一表面201a可为活性表面，且可在第一表面201a上形成电路层204。在半导体基材201的其上形成电路层204的第一表面201a上，可形成用p型杂质如磷(P)、砷(As)、或锑(Sb)和/或n型杂质如硼(B)、铟(In)、或镓(Ga)掺杂的掺杂区域。作为与第一表面201a相反的表面的第二表面201b可不用杂质掺杂。在下文中，在一些情况中，第一表面201a可称为活性表面，且第二表面201b可称为非活性表面。
层间电介质204b可覆盖第一表面201a上的半导体器件204a。层间电介质204b可起到使半导体器件204a中的电路器件彼此物理和/或电绝缘的作用。另外，层间电介质204b可用于将单层或多层布线层203中的线与半导体器件204a中的电路器件隔离。换句话说，单层或多层布线层203通过层间电介质204b与半导体器件204a中的电路器件绝缘。层间电介质204b可具有通过堆叠多个由例如氧化物、氮化物、低K电介质、高K电介质、或其组合的材料形成的层而获得的堆叠结构。
半导体器件204a可在半导体基材201的第一表面201a上在层间电介质204b内形成，且可包括很多电路器件。半导体器件204a可根据半导体器件的种类包括各种电路器件例如有源器件如晶体管和二极管、和/或无源器件如电容器和电阻器。半导体器件204a可包括从如下之中选择的至少一种：系统大规模集成电路(LSI)；逻辑电路；图像传感器如CMOS图像传感器(CIS)；存储器件如闪存、DRAM、SRAM、EEPROM、PRAM、MRAM、Re RAM、高带宽存储器(HBM)、或混合存储立方体(HMC)；和微机电系统(MEMS)器件。
半导体器件204a的电路器件可通过导电连接体如通孔-接触(过孔-接触，via-contact)电连接到布线层203中的线。布线层203可包括金属间电介质203c、导电线或导电焊盘203a，以及竖直塞203b。
金属间电介质203c可在电路层204上即在层间电介质204b上形成，且可覆盖线203a。金属间电介质203c可用于将两个或更多个线203a彼此隔离。尽管在图6中金属间电介质203c作为一个层显示，但是金属间电介质203c可具有多个层。例如，取决于包括线203a的层的数量，金属间电介质203c可具有两个或更多个层。
线203a可由至少一个层形成。另外，线203a可电连接到半导体器件204a中的电路器件以构成某电路，或者可用于将电路器件电连接到在半导体器件204a外部的器件。尽管在图6中显示线例如第一线203a的仅一个层，但是在与第一线203a的层不同的层中可形成额外的线。所述额外的线可通过竖直塞等电连接到第一线203a。此外，第一线203a可通过竖直塞203b连接到电极焊盘207。第一线203a可由金属如铜、铝、钨等形成。
尽管已经描述了线和线的材料，但是本发明构思不限于此。另外，由于在图6中仅作为实例显示线和竖直塞的结构以及其间的连接结构，因此本领域普通技术人员将理解，线和竖直塞的结构、其间的连接结构等不限于图6的实例。
线203a和竖直塞203b可包括相同或不同的材料。线203a和竖直塞203b可包括构成线的中心金属、和至少一个围绕中心金属且防止中心金属的扩散的阻挡金属层。
贯通电极220可穿透电路层204，且可从作为半导体基材201的活性表面的第一表面201a朝着第二表面201b延伸。例如，贯通电极220可为贯通硅通孔(TSV)。贯通电极220的一端可电连接到线203a。另外，贯通电极220的另一端可朝着第二表面201b延伸以在半导体基材201中终止。
贯通电极220可包括至少一种金属。具体地，贯通电极220可包括在其中心部分中的布线金属层222和围绕布线金属层222的阻挡金属层224。布线金属层222可包括如下的一种或多种：铝(Al)、金(Au)、铍(Be)、铋(Bi)、钴(Co)、铜(Cu)、铪(Hf)、铟(In)、锰(Mn)、钼(Mo)、镍(Ni)、铅(Pb)、钯(Pd)、铂(Pt)、铑(Rh)、铼(Re)、钌(Ru)、钽(Ta)、碲(Te)、钛(Ti)、钨(W)、锌(Zn)、锆(Zr)等。例如，布线金属层222可包括从钨(W)、铝(Al)、和铜(Cu)之中选择的一种或多种的堆叠结构。
另外，阻挡金属层224可包括从钛(Ti)、钽(Ta)、氮化钛(TiN)、和氮化钽(TaN)之中选择的一种或多种的堆叠结构。然而，布线金属层222和阻挡金属层224不限于以上阐述的材料。此外，取决于被选择为用于布线金属层222的材料的金属，可省略阻挡金属层224。
此外，可在阻挡金属层224的外表面上提供间隔绝缘层225。间隔绝缘层225可防止半导体基材201或电路层204中的电路器件直接接触贯通电极220。间隔绝缘层225可沿着阻挡金属层224的表面延伸。间隔绝缘层225可包括氧化物膜或氮化物膜。例如，间隔绝缘层225可包括氧化硅(SiO2)膜。
在图6中，贯通电极220被显示为具有中通孔结构。即，在形成半导体器件204a和层间电介质204b之后，且在形成布线层203之前，可形成贯通电极220。然而，本发明构思不限于此，且还可应用于先通孔结构或后通孔结构。由于先通孔结构或后通孔结构是本领域普通技术人员公知的，因此省略其细节。
电极焊盘207可形成于金属间电介质203c上，且可通过竖直塞203b电连接到布线层203中的线203a。在一些情况中，可进一步在金属间电介质203c和电极焊盘207之间插入额外的层间电介质，且电极焊盘207和线203a可通过穿透所述额外的层间电介质的竖直接触彼此电连接。
钝化层208可形成于金属间电介质203c的上表面和电极焊盘207的侧表面上。钝化层208可保护半导体芯片的活性表面，且可包括氧化物膜、氮化物膜、或其组合。
导电凸起230可形成于电极焊盘207上。导电凸起230可包括例如锡(Sn)。在一些情况中，导电凸起230可包括锡(Sn)、钯(Pd)、镍(Ni)、银(Ag)、铜(Cu)等或其组合。导电凸起230可具有半圆形状。导电凸起230通过回流工艺而具有半圆形状，并且可取决于回流工艺而具有稍微不同于半圆形状的形状。
参照图5B，有机硅脱模层242可形成于活性表面211a和导电凸起230的表面上。有机硅脱模层242可沿着活性表面211a和导电凸起230的表面共形地形成。在一些实施方式中，有机硅脱模层242可沿着活性表面211a和导电凸起230的表面至少部分地共形地形成。由于有机硅脱模层242的细节与参照图3A描述的有机硅脱模层122的那些相同，因此省略其额外的描述。有机硅脱模层242可通过例如化学气相沉积(CVD)、原子层沉积(ALD)等的方法形成。有机硅脱模层242可在约200℃-约700℃、约300℃-约650℃、或约400℃-约600℃的温度下形成。
参照图5C，有机硅粘着层244形成于有机硅脱模层242的上侧上。有机硅粘着层244可与有机硅脱模层242一起构成有机硅粘合剂240。
有机硅粘着层244可包括例如有机硅单体或低聚物，并且可为能够为了结合的目的使用的可聚合的组合物。有机硅粘着层244可具有容许有机硅粘着层244通过液体工艺如旋涂等形成为相对均匀的厚度的粘度或流动性。有机硅粘着层244可通过使用例如刷涂、空气喷涂、静电涂布、浸涂、旋涂、凹版印刷涂布、棒涂、幕涂、气刀涂布、辊涂、刮涂、门辊涂布、模头涂布等的方法形成。有机硅粘着层244可形成为比突出的导电凸起230的高度厚的厚度。
参照图5D，载体基材250附着到有机硅粘着层244的上侧上。
载体基材250可包括例如硅(例如，空白器件晶片)、钠钙玻璃、硼硅酸盐玻璃、碳化硅、硅锗、氮化硅、砷化镓、蓝宝石、各种金属或陶瓷等、或其任意组合。然而，本发明构思不限于此。
在附着载体基材250之后，可使有机硅粘着层244固化用于载体基材250和器件基材211之间的坚固结合。有机硅粘着层244可通过除去溶剂和/或聚合而固化。例如，可通过向有机硅粘着层244施加能量如光、热等而引发有机硅粘着层244的聚合。
参照图5E，在通过载体基材250支撑之后，使器件基材211经历薄化。器件基材211可被薄化直至贯通电极220被充分地暴露。器件基材211的薄化可通过例如诸如研磨、化学机械抛光(CMP)、各向异性蚀刻、旋转蚀刻、各向同性蚀刻等的方法进行。然而，本发明构思不限于此。
参照图5F，可将胶带260附着到薄化的器件基材211。可附着胶带260用于如下目的：赋予器件基材211以额外的机械强度和防止器件基材211被分离成单独的芯片(例如，在随后的切割(切片)工艺中)。
参照图5G，可移除载体基材250。当移除载体基材250时，尽管理想地(理论上)器件基材211和载体基材250将沿着有机硅脱模层242彼此分离，但是实际上有机硅粘着层244和有机硅脱模层242的残余物可残留在器件基材211和导电凸起230的表面上。
即，如图5G中所示，有机硅脱模层242的残余物242a可残留在导电凸起230和器件基材211之间的角落部分中。另外，有机硅脱模层242的残余物242b还可残留在器件基材211的表面上。此外，有机硅脱模层242的残余物242c还可残留在导电凸起230的表面上。此外，有机硅粘着层244的残余物244a可残留在所述表面的一些部分中。
图7为用于描述有机硅粘着层244的残余物244a残留的多种原因之一的侧视截面图。参照图7，当通过化学气相沉积形成有机硅脱模层242时，将突出的特征的所有表面覆盖至均匀的厚度可为困难的。换句话说，尽管有机硅脱模层242可如在图7的右侧中的导电凸起230的表面上所示形成为均匀的厚度，但是有机硅脱模层242可如在图7中的左侧中的导电凸起230附近所示无法在角落部分F中形成。
如果如上所阐述地形成有机硅粘着层244，则有机硅粘着层244可直接接触器件基材211。如果有机硅粘着层244直接接触器件基材211，则当分离载体基材250时，有机硅粘着层244的一些残留在器件基材211上。
参照图5H，为了除去残余物242a、242b、242c、244a，可通过使用根据如上阐述的公开内容的用于除去有机硅树脂的组合物清洁器件基材211。由于以上已经描述了用于除去有机硅树脂的组合物，因此省略其额外的描述。
参照图5I，使如上制造的器件基材211经历切割，由此获得单独的半导体芯片420，且可通过使用半导体芯片420制造半导体封装体400。例如，半导体封装体400可包括顺序地堆叠在封装体基材410上的多个半导体芯片420。控制芯片430连接到多个半导体芯片420上。多个半导体芯片420和控制芯片430的堆叠结构通过密封剂440如热固性树脂密封。尽管在图5I中作为实例显示其中六个半导体芯片420竖直堆叠的堆叠结构，但是半导体芯片420的数量和堆叠方向不限于所述实例。在需要时，半导体芯片420的数量可小于或大于6。多个半导体芯片420可在水平方向上布置，或者可以竖直安装和水平安装的组合结构布置。在一些实施方式中，可省略控制芯片430。
封装体基材410可包括柔性印刷电路板、刚性印刷电路板、或其组合。封装体基材410包括基材内部线412和连接端子414。连接端子414可形成于封装体基材410的一个表面上。焊料球416形成于封装体基材410的另一表面上。连接端子414通过基材内部线412电连接到焊料球416。在一些实施方式中，可通过导电凸起或岸面栅格阵列(LGA)代替焊料球416。
多个半导体芯片420和控制芯片430可包括贯通电极422、432。贯通电极422、432各自可包括在其中心部分中的布线金属层222和围绕布线金属层222的阻挡金属层224，如参照图6所描述的。
贯通电极422、432可通过导电构件450如凸起电连接到封装体基材410的连接端子414。在一些实施方式中，可省略控制芯片430中的贯通电极432。
多个半导体芯片420各自可包括系统LSI、闪存、DRAM、SRAM、EEPROM、PRAM、MRAM、或RRAM。控制芯片430可包括逻辑电路如串行器/解串器(SER/DES)电路。
图8A-8G为按照根据另一实施方式的制造半导体封装体的方法的进行顺序显示的侧视截面图。参照图8A，在载体基材350上形成有机硅粘合剂340。有机硅粘合剂340可包括有机硅脱模层342和有机硅粘着层344。由于有机硅脱模层342和有机硅粘着层344的细节与参照图3A、4A、和5A-5C多样地详细描述的有机硅脱模层122和有机硅粘着层124的那些相同，因此省略其细节。而且，载体基材350可如以上参照载体基材250所示例性地描述地提供。
参照图8B，将器件基材311附着到有机硅粘着层344上。器件基材311可在其中包括贯通电极320。贯通电极320的一个末端可连接到在器件基材311的活性表面311a上的导电凸起330，且贯通电极320的另一末端可朝着与活性表面311a相反的相反表面311b延伸。
参照图8C，可通过使有机硅粘着层344固化而将器件基材311和载体基材350彼此牢固地结合。为了使有机硅粘着层344固化，可向有机硅粘着层344施加能量如热或光。特别地，由于当使用玻璃基材作为载体基材350时可促进光照射，因此可使用可光聚合的材料作为有机硅粘着层344。
参照图8D，在通过载体基材350支撑之后，使器件基材311经历薄化。可将器件基材311薄化直至贯通电极320被充分地暴露。由于已经参照图5E等描述了用于薄化的方法，因此省略其重复描述。
参照图8E，可将胶带360附着到薄化的器件基材311。可附着胶带360用于如下目的：赋予器件基材311以额外的机械强度和防止器件基材311被分离成单独的芯片(例如，在随后的切割工艺中)。
参照图8F，可移除载体基材350。尽管理想地器件基材311和载体基材350沿着有机硅脱模层342彼此分离，但是当移除载体基材350时，实际上有机硅粘着层344和有机硅脱模层342的残余物可残留在器件基材311和导电凸起330的表面上。即，如图8F中所示，有机硅粘着层的残余物344a、344b可残留在导电凸起330和器件基材311的表面上。另外，有机硅脱模层的残余物342a也可残留在有机硅粘着层的一些残余物344b的表面上。然而，在所述表面上可部分地存在使器件基材311暴露的部分E1或使导电凸起330暴露的部分E2。
参照图8G，为了除去残余物342a、344a、344b，可通过使用根据如上阐述的公开内容的用于除去有机硅树脂的组合物清洁器件基材311。
由于以上已经描述了用于除去有机硅树脂的组合物，因此省略其额外的描述。
然后可使如以上所讨论地制造的器件基材311经历切割，由此可获得单独的半导体芯片420，并且可通过使用半导体芯片420制造如参照图5I描述的半导体封装体400。
在下文中，将参照一些实施例更详细地说明本公开内容的实施方式。应理解，这些实施例是仅为了说明而提供的且将不以任何方式解释为限制本发明构思。
用于除去有机硅树脂的组合物的制备
根据如表1中列举的用于除去有机硅树脂的组合物的组分和量制备用于除去有机硅树脂的组合物(实施例1-12)。
Figure BDA0001172588030000201
FC1：氟化四丁基铵(TCI Co.，Ltd.)
FC2：氟化四乙基铵(合成的)
FC3：氟化四丙基铵(合成的)
另外，根据如表2中列举的用于除去有机硅树脂的组合物的组分和量制备用于除去有机硅树脂的组合物(对比例1-8)。
Figure BDA0001172588030000202
Figure BDA0001172588030000211
在实施例1-12和对比例1-8中使用的所有溶剂是从TCI Co.，Ltd获得的市售产品。
薄膜基材的制造1
在硅基材的表面上形成半导体器件，随后形成聚硅氧烷的层作为有机硅脱模层。接着，将包括硅氧烷单体和引发剂的组合物作为有机硅粘着层涂布到有机硅脱模层的表面上，随后在200℃的温度下使有机硅粘着层初步固化。有机硅脱模层和有机硅粘着层的厚度之和为80μm。
接着，将硅晶片作为载体基材附着到有机硅粘着层上，随后在250℃的温度下使有机硅粘着层最终固化。然后通过使用砂轮将硅基材薄化到约50μm的厚度，随后将胶带附着到薄化的硅基材以保护薄化的硅基材。通过使用叶片在有机硅脱模层和有机硅粘着层之间施加物理力，由此引起裂纹。接着，将硅基材和载体基材彼此分离。
将分离的硅基材切割成2×2cm2的尺寸，随后将分离的硅基材浸入实施例1-12和对比例1-8的组合物的每一种中，然后用异丙醇漂洗和干燥。当将分离的硅基材浸入用于除去有机硅树脂的组合物的每一种中时，将各组合物的温度调节至25℃，且将各组合物以350rpm搅拌。
接着，使用扫描电子显微镜(SEM)测量残余有机硅树脂的膜厚度。结果示于表3A-3B中。另外，将所述用于除去有机硅树脂的组合物的每一种在室温下存储30天，随后以与以上阐述的相同的方法进行有机硅树脂的清洁实验。这些结果也示于表3A-3B中。
Figure BDA0001172588030000221
Figure BDA0001172588030000222
如表3A中所示，在根据本公开内容的实施例1-12中制备的用于除去有机硅树脂的组合物呈现比如表3B中所示的对比例1-8的组合物更显著的有机硅树脂除去性能。
另外，可看出，实施例的组合物还具有存储稳定性，因为实施例1-12的组合物即使在30天的存储之后也呈现几乎相当的除去性能。
尽管对比例的组合物的大部分具有存储稳定性，但是观察到，对比例8的组合物在除去性能方面遭受轻微的恶化。
薄膜基材的制造2
以与在薄膜基材的制造1中相同的方式进行试验，除了如下之外：在载体基材上形成有机硅脱模层和有机硅粘着层之后，将硅基材附着到有机硅粘着层上。结果示于表4A-4B中。
Figure BDA0001172588030000231
Figure BDA0001172588030000241
如表4A-4B中所示，可看出，当在载体基材上形成有机硅脱模层和有机硅粘着层时，与当在器件基材上形成有机硅脱模层和有机硅粘着层时相比，除去性能整体上恶化。
尽管已经参照本发明构思的实施方式具体显示和描述了本发明构思，但是将理解，在不背离所附权利要求的精神和范围的情况下，可在其中进行形式和细节方面的各种变化。

Claims (14)

1.用于除去有机硅树脂的组合物，所述组合物包括：
杂环溶剂；和
由式(1)表示的氟化烷基铵盐：
(R)4N+F- 式(1)
其中R为C1-C4直链烷基，
其中氟化烷基铵盐以基于所述组合物的总重量的1重量％-20重量％的量存在，和
其中杂环溶剂包括吡啶溶剂、吗啉溶剂、哌嗪溶剂、脲溶剂、
Figure FDA0002744756100000011
唑烷酮溶剂、或吡咯烷酮溶剂，由式(1)表示的化合物包括氟化四甲基铵、氟化四乙基铵、氟化四丙基铵、或氟化四丁基铵，和其中排除所述组合物包括氟化四丁基铵与吗啉溶剂或
Figure FDA0002744756100000012
唑烷酮溶剂的组合的情况。
2.根据权利要求1所述的组合物，其中杂环溶剂以基于所述组合物的总重量的80重量％-99重量％的量存在。
3.用于除去有机硅树脂的组合物，所述组合物包括：
杂环溶剂；和
由式(1)表示的氟化烷基铵盐：
(R)4N+F- 式(1)
其中R为C1-C4直链烷基；
其中氟化烷基铵盐以基于所述组合物的总重量的1重量％-20重量％的量存在，
其中杂环溶剂具有4-8元环；
其中杂环溶剂为选自如下的至少一种：含氮杂环溶剂、含氧杂环溶剂、及其组合；
其中杂环溶剂以基于所述组合物的总重量的80重量％-99重量％的量存在，和
其中杂环溶剂包括吡啶溶剂、吗啉溶剂、哌嗪溶剂、脲溶剂、
Figure FDA0002744756100000013
唑烷酮溶剂、或吡咯烷酮溶剂，由式(1)表示的化合物包括氟化四甲基铵、氟化四乙基铵、氟化四丙基铵、或氟化四丁基铵，和其中排除所述组合物包括氟化四丁基铵与吗啉溶剂或
Figure FDA0002744756100000014
唑烷酮溶剂的组合的情况。
4.根据权利要求3所述的组合物，其中杂环溶剂以90重量％-99重量％的量存在。
5.薄化基材的方法，所述方法包括：
使用有机硅粘合剂将载体基材附着到靶基材；
薄化靶基材；
将载体基材和靶基材彼此分离使得有机硅粘合剂的部分残留在靶基材上；和
通过使用组合物清洁靶基材以除去残留在靶基材上的有机硅粘合剂的所述部分，
其中组合物包括杂环溶剂和含氟化合物，
其中所述组合物为根据权利要求1-4任一项所述的用于除去有机硅树脂的组合物。
6.根据权利要求5所述的方法，其中有机硅粘合剂包括有机硅脱模层和有机硅粘着层。
7.根据权利要求6所述的方法，其中有机硅脱模层和有机硅粘着层堆叠在靶基材和载体基材之间，和
有机硅脱模层直接接触靶基材且不直接接触载体基材。
8.根据权利要求7所述的方法，其中有机硅粘着层直接接触载体基材。
9.根据权利要求6所述的方法，其中将载体基材附着到靶基材包括：
通过化学气相沉积形成有机硅脱模层；
在有机硅脱模层上形成有机硅粘着层；
经由有机硅粘合剂将靶基材结合到载体基材；和
加热有机硅粘合剂。
10.制造半导体封装体的方法，所述方法包括：
提供器件基材，其包括：半导体基材；形成于半导体基材的活性表面上的半导体器件；和电连接到半导体器件的贯通电极，贯通电极朝着半导体基材的与活性表面相反的表面延伸；
经由有机硅粘合剂将载体基材结合到器件基材的活性表面；
薄化器件基材以由此在器件基材的与其活性表面相反的表面处暴露贯通电极；
将器件基材从载体基材分离使得有机硅粘合剂的残余物残留在器件基材的活性表面上；和
使有机硅粘合剂的残余物与组合物接触以除去残余物，
其中所述组合物为根据权利要求1-4任一项所述的用于除去有机硅树脂的组合物。
11.根据权利要求10所述的方法，其中所述方法进一步包括在提供器件基材之后在器件基材的活性表面上形成导电凸起，导电凸起从所述活性表面突出，
有机硅粘合剂包括直接接触所述活性表面的有机硅脱模层和形成于有机硅脱模层上的有机硅粘着层，和
有机硅脱模层至少部分地沿着所述活性表面和导电凸起形成。
12.根据权利要求11所述的方法，其中有机硅脱模层通过化学气相沉积形成，和
有机硅粘着层通过旋涂形成为具有比突出的导电凸起的高度大的厚度。
13.用于将靶基材暂时结合到载体基材以促进靶基材的加工的系统，所述系统包括：
载体基材；
配置成将载体基材结合到靶基材的有机硅粘合剂；
配置成将载体基材和靶基材相互分离使得有机硅粘合剂的残余物残留在靶基材上的分离装置；和
配置成除去残余物的组合物，其中所述组合物为根据权利要求1-4任一项所述的用于除去有机硅树脂的组合物。
14.如权利要求13所述的系统，其中有机硅粘合剂包括：
配置成接触靶基材的有机硅脱模层；和
设置在有机硅脱模层上并且接触载体基材的有机硅粘着层。
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