CN1185231A - 半导体单元的封装体、其封装方法及其封装材料 - Google Patents
半导体单元的封装体、其封装方法及其封装材料 Download PDFInfo
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- CN1185231A CN1185231A CN96194158A CN96194158A CN1185231A CN 1185231 A CN1185231 A CN 1185231A CN 96194158 A CN96194158 A CN 96194158A CN 96194158 A CN96194158 A CN 96194158A CN 1185231 A CN1185231 A CN 1185231A
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- semiconductor unit
- encapsulating material
- packing
- substrate
- rheology modifier
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Abstract
一种半导体单元的封装体,包括:具有电极焊盘的半导体单元、具有端子电极的衬底、设在电极焊盘的一部分上的隆起电极、具有韧性的导电粘着层、使粘度为100Pa·s以下且触变指数为1.1以下的混合物硬化而构成的封装层。作为混合物,使用例如以包含聚环氧丙烷、酸酐及流变改性剂的树脂粘合剂和填充材料为主要成分的物质,而作为流变改性剂使用具有阻碍酸酐中的游离酸和填充材料的表面上的极性基之间的相互作用的功能的物质。
Description
本发明涉及一种使用导电性粘着剂通过倒装式结合法(flip-chip bonding)将半导体单元搭载到衬底上、并使用树脂封装层将衬底和半导体器件机械地连接在一起的半导体单元的封装体及其封装方法。
以往,半导体器件等电子元件的连接端子和衬底上的电路图案的端子电极之间的连接,一般使用焊锡连接。但是,最近随着半导体封装等的小型化及连接端子数的增加,连接端子之间变得更狭窄。因此,用现有的粘着部面积大的焊锡连接已经不能应付。
因此,最近流行将芯片的有源元件面向下直接连接到衬底上的端子电极上(倒装式结合)以实现封装面积的高效化的尝试。作为这种倒装式封装方式,提出和实施了各种方案,以下对其有代表性的例子进行介绍。
(1)焊锡等低熔点金属结合
如图8所示,半导体器件1的电极焊盘2上设有焊锡隆起电极8,在和衬底6上的端子电极5对准之后使焊锡熔化,使半导体器件1和衬底6电连接。作为与此类似的方法,也提出了下述方法:如图9所示,形成金的隆起电极3,在隆起电极3和衬底6上的端子电极5之间形成低熔点金属的镀层,例如形成铟镀层9,使该铟镀层9的低熔点金属熔化并电连接后,将半导体器件和衬底6通过封装层10机械结合在一起。
(2)通过封装树脂的硬化收缩应力的结合
如图10所示,在半导体器件1的电极焊盘2上设有金的隆起电极3,将半导体器件1上的隆起电极3和衬底6上的端子电极5对准,在半导体器件1和衬底6之间的间隙填充封装材料之后,使封装材料硬化以形成封装层12,通过封装层12的硬化收缩力在隆起电极3和端子电极5之间产生压缩应力,使两者电连接,与此同时,使半导体器件1和衬底6机械结合。此外,为了提高连接可靠性,有时也有如图10所示在端子电极5上形成镀金层11的情况。
(3)通过各向异性粘着剂的结合
如图11所示,在半导体器件1的电极焊盘2上设有由金构成的隆起电极3,在半导体器件1和衬底6之间的间隙中,填充使粘合剂中分散有导电粒子的各向异性导电粘着剂,在加压的状态下加热,使各向异性粘着剂硬化,形成各向异性导电粘着层13,由此使隆起电极3和衬底6上的端子电极5电连接,与此同时,使半导体器件1和衬底6机械结合。
(4)通过导电粘着剂的结合
如图12所示,在半导体器件1的电极焊盘2上设有由金构成的隆起电极3,在隆起电极3上转印导电粘着剂,在将隆起电极3和衬底6上的端子电极5对准之后使导电粘着剂硬化,由此通过导电粘着层4使隆起电极3和端子电极5电连接。此后,在半导体器件1和衬底6之间的间隙中填充封装材料,使其硬化并形成封装层7,由此使半导体器件1和衬底6机械结合。作为这种封装材料,一般使用以包含甲酚-可溶酚醛(CRESOL NOVOLAC)型环氧树脂及可溶酚醛(NOVOLAC)型酚醛树脂(硬化剂)的树脂粘合剂和绝缘粒子构成的填充材料作为主要成份的混合物。
但是,在上述各种封装方式中,分别存在以下问题:
在封装方式(1)及(2)中,由于其构造很难缓和由半导体器件和衬底的膨胀系数之差引起的热应力,所以不宜用于要求很宽温度范围内的连接稳定性的用途。
在封装方式(3)中,由于各向异性导电粘着剂中的树脂粘合剂中使用了韧性高的树脂材料,所以有可能缓和热应力,但是在此情况下,由于粘合剂的吸湿性提高,所以存在高湿度环境下的连接稳定性问题。此外,通过使粘合剂的热膨胀率和半导体器件及衬底相符也可能缓和热应力,但是在此情况下,由于包含大量的低膨胀率的填充材料,所以存在初始的连接可靠性恶化的担忧。
在封装方式(4)中,通过使导电粘着剂具有韧性并且使封装材料的热膨胀率和半导体器件及衬底相符,可以缓和热应力。因此,可以说,该封装方式(4)是上述倒装式封装方式中的各种方式中最有希望的方式。
但是,即使在上述封装方式(4)中,也同上述一样,由甲酚可溶酚醛型环氧树脂和可溶酚醛型酚醛树脂等混合的混合物构成的封装材料粘度高,此外为了使热膨胀率和半导体器件及衬底相符不得不提高封装材料中的填充材料的比率,结果使封装材料变为高粘度。因此,在将封装材料填充到半导体器件和衬底之间时,需要将封装材料加热到70~80℃以使得粘度降低。其结果是,生产率降低,而且存在由于温度上升时的热膨胀率之差引起的热应力在封装材料封入时导电连接部会受到损伤、因此连接可靠性降低的问题。
另一方面,也有人考虑使用在室温下低粘度的聚环氧丙烷和酸酐为主要成份的树脂粘合剂作为封装材料。但是,当为了降低热膨胀率而向这种树脂粘合剂中添加大量的填充材料时,封装材料的粘度很低,而触变指数变高。其结果是,存在下述问题,即半导体器件和衬底之间不能封入,或者即使能够封入,也会带入大量的气泡,由于该气泡硬化的封装材料的热膨胀等因场所而异不均匀,使连接可靠性降低,因此,用聚环氧丙烷和酸酐构成的树脂做成的封装材料缺乏实用性。
本发明的目的在于查明封装材料获得良好的封装特性所需的粘度和触变特性的极限值,通过使用满足该粘度和触变特性的封装材料来提供连接可靠性及生产率高的半导体单元及其封装方法。
本发明的发明者查明,现有的材料难以用作封装材料的原因在于,不仅是粘度、而且是封装材料的触变指数高。例如,查明在包含聚环氧丙烷和酸酐的树脂粘合剂中,酸酐中的游离酸和填充材料表面上的极性基之间的相互作用阻碍了流动性。因此,鉴于该查明的事实,为了实现上述目的,采用以下手段。
本发明采用的手段在于,在倒装式封装方式中,作为封装材料,使用粘度在100Pa·s以下、触变指数在1.1以下的混合物,通过使其硬化而得到的封装层使半导体单元和衬底机械连接。
本发明的半导体单元的封装体包括:具有电极焊盘的半导体单元、具有端子电极的衬底、设在上述半导体单元的电极焊盘上的隆起电极、由具有韧性的导电粘着剂构成并使上述隆起电极和衬底上的端子电极电连接的导电粘着层、使粘度在100Pa·s以下且触变指数在1.1以下的混合物硬化而构成并填充上述半导体单元和上述衬底之间的间隙以使两者机械结合的封装层。
通过这种构成,在将半导体单元搭载到衬底上构成的半导体单元中,使半导体单元和衬底机械结合的封装层,在液态封装工序中具有低粘度(100Pa·s以下)、低触变指数(1.1以下),因此在封装工序中封装材料注入时迅速而且不产生气泡,即使很小的间隙也能充分浸透,此外也能降低注入温度。由于这些性质,提高了半导体单元-衬底间的粘合性及耐热冲击性等电连接可靠性,同时提高了生产率。
可以使上述混合物包含下述主要成份:至少包含聚环氧丙烷、碳酸酐、流变改性剂及潜在性硬化触媒的树脂粘合剂和由绝缘物质构成的填充材料;并使上述流变改性剂具有阻碍上述碳酸酐中的游离酸和上述填充材料表面上的极性基之间的相互作用的功能。
在上述流变改性剂中,最好包含选择性地吸附碳酸酐中的游离酸的物质。
上述流变改性剂最好由路易斯盐基化合物构成。
此外,上述流变改性剂最好由叔胺化合物、叔膦化合物、季铵盐、季鏻盐及环内包含氮原子的杂环化合物之中的至少一个构成。
在这些构成中,封装材料的主要成份使用了酸酐硬化型环氧树脂和绝缘物质等热膨胀率小的物质,因此作用到封装层上的热应力减少。而且,作为流变改性剂,采用具有阻碍酸酐中的游离酸和填充材料的表面上的极性基之间的相互作用的功能的物质,因此实现了低粘度和低触变指数。
在上述树脂粘合剂中的碳酸酐中,最好至少包含环状脂肪族酸酐。
在此情况下,上述环状脂肪族酸酐中,可以至少包含三烷基四氢酞酸酐。
通过这些构成,利用吸水性低的环状脂肪族酸酐的特性可以确保树脂粘合剂的良好的耐湿性。此外,在半导体单元的封装工序中液态的树脂粘合剂的粘度也低,因此封装材料的封入可以短时间完成,从而可以降低半导体单元的造价。
上述半导体单元的隆起电极最好由两级突起状的柱栓隆起电极构成。
通过这种构成,可以高密度地设置半导体单元的隆起电极数。而且,在将半导体单元搭载到衬底上时,在使高密度设置的隆起电极和衬底上的端子电极电连接后将封装材料注入两者间的间隙时,使用低粘度、低触变指数的封装材料,因此即使是小的间隙也能充分注入封装材料。因此,在通过高密度封装而形成的半导体单元中,提高了半导体单元和衬底之间的电连接及机械结合的可靠性。
本发明的半导体单元的封装方法,是在具有端子电极的衬底上搭载具有电极焊盘的半导体单元的半导体单元的封装方法,包括下述工序:在上述半导体单元的电极焊盘上形成隆起电极的第一工序;在上述隆起电极的末端附近附着导电粘着剂的第二工序;使上述隆起电极和衬底的端子电极对准,并将半导体单元设置在衬底上,通过上述导电粘着剂使半导体单元的隆起电极和衬底的端子电极电连接的第三工序;调整由粘度为100Pa·s以下、触变指数为1.1以下的混合物构成的封装材料的第四工序;将上述封装材料填充到上述半导体单元和衬底之间的间隙中的第五工序;以及使上述封装材料硬化,使上述半导体单元和衬底机械结合的第六工序。
通过这种方法,由于使用了低粘度(100Pa·s以下)、低触变指数(1.1以下)的封装材料,所以在封装工序中封装材料的注入时,可以迅速而且不产生气泡地充分浸透很小的间隙,此外也可以降低注入温度。因此,提高了封装的半导体器件-衬底间的粘合性及耐热冲击性等电连接可靠性,同时缩短了封装所需的时间。
在上述第四工序中,作为上述混合物,可以使用以下述物质为主要成份的混合物,即至少包含聚环氧丙烷、碳酸酐、流变改性剂及潜在性硬化触媒的树脂粘合剂和由绝缘物质构成的填充材料,上述流变改性剂最好具有阻碍上述碳酸酐中的游离酸和上述填充材料表面上的极性基之间的相互作用的功能。
通过这种方法,在第五工序中可以降低封装材料的粘度和触变指数。此外,作为封装材料的主要成份使用了酸酐硬化型环氧树脂和绝缘物质等热膨胀率小的物质,所以减小了作用到封装后的封装层的热应力。
在上述流变改性剂中,仅包含微量的作为二液性封装材料的硬化触媒使用的物质,使其不能发挥硬化触媒功能。
通过这种方法,在第四工序之后进行第五工序之前不用开始使封装材料硬化,在第六工序中使封装材料硬化时将流变改性剂加入构成封装树脂层的网络结构内。因此,通过添加流变改性剂,可以防止有可能发生的耐热性和耐湿性降低等不良影响。
在上述第四工序中,作为上述树脂粘合剂中的碳酸酐,最好至少包含环状脂肪族酸酐。
在此情况下,作为上述环状脂肪族酸酐,可以至少包含三烷基四氢酞酸酐。
通过这些方法,环状脂肪族酸酐粘度低、而且吸水率低,因此缩短了第六工序中的封装材料的封入时间,提高了耐湿性。
在上述第一工序中,作为上述半导体单元的隆起电极,最好形成两级突起状的柱栓隆起电极。
通过这种方法,可以高密度地设置半导体单元的隆起电极数,在第五工序中,在高密度设置的隆起电极和衬底上的端子电极之间低粘度、低触变指数的封装材料不会产生气泡,即使是很小的间隙也能充分注入。因此,提高了高密度封装的半导体单元和衬底之间的电连接及机械结合的可靠性。
在上述第五工序中,最好将封装材料在室温条件下注入。
通过这种方法,可以得到由于热应力减少而耐热冲击性提高等、电连接可靠性极高的封装体。
在上述第五工序中,封装材料最好在减压条件下注入。
通过这种方法,在提高生产率的同时,可以得到电连接可靠性极高的半导体单元。
在上述第四工序中,可以首先将碳酸酐和填充材料的一部分混合,在使该混合物老化后,再加入聚环氧丙烷及填充材料的其余部分。
通过这种方法,酸酐中的游离酸和填充材料表面上的极性基之间的相互作用被缓和,因此实现了封装材料的低粘度特性和低触变特性。
在上述流变改性剂中,可以包含选择性地吸附碳酸酐中的游离酸的物质。
通过这种方法,由流变改性剂选择性地吸附酸酐中的游离酸,从而阻碍了游离酸和填充材料表面上的极性基之间的相互作用,因此实现了封装材料的低粘度特性和低触变特性。
上述流变改性剂最好是路易斯盐基化合物。
此外,上述流变改性剂可以是叔胺化合物、叔膦化合物、季铵盐、季鏻盐及环内包含氮原子的杂环化合物中的至少一个。
通过这些方法,由流变改性剂阻碍了游离酸和填充材料表面上的极性基之间的相互作用,因此实现了封装材料的低粘度特性和低触变特性。
本发明的第一半导体单元的封装材料,是填充半导体单元和衬底之间的间隙并使两者连接的封装材料,包括:至少包含聚环氧丙烷、碳酸酐、流变改性剂及潜在性硬化触媒的重量比为80~25%的树脂粘合剂和由绝缘物质构成的重量比为20~75%的填充材料。而且,上述流变改性剂具有阻碍上述碳酸酐中的游离酸和上述填充材料表面上的极性基之间的相互作用的功能。
通过这种构成,具有低粘度(100Pa·s以下)、低触变指数(1.1以下),因此,在封装工序中封装材料的注入时迅速而且不产生气泡,即使是小的间隙也能充分浸透,此外可以降低注入温度。而且,通过潜在性硬化触媒确保了封装材料的保存状态下的稳定性和实用的硬化促进功能。因此,提高了封装体中半导体单元-衬底间的粘合性及耐热冲击性等电连接可靠性,同时提高了生产率。
在上述流变改性剂中,最好包含选择性地吸附碳酸酐中的游离酸的物质。
此外,上述流变改性剂最好由路易斯盐基化合物构成。
上述流变改性剂可以是叔胺化合物、叔膦化合物、季铵盐、季鏻盐及环内包含氮原子的杂环化合物中的至少一个。
通过这些构成,作为封装材料的主要成份使用酸酐硬化型环氧树脂和绝缘物质等热膨胀率小的物质,所以降低了作用到形成的封装体中的封装层上的热应力。而且,作为流变改性剂,采用了具有阻碍酸酐中的游离酸和填充材料的表面上的极性基之间的相互作用的功能的物质,所以实现了低粘度和低触变指数。
上述树脂粘合剂中的碳酸酐中,可以至少包含环状脂肪族酸酐。
在此情况下,可以至少包含三烷基四氢酞酸酐。
通过这些构成,利用吸水性低的环状脂肪族酸酐的特性可以确保树脂粘合剂的良好的耐湿性。此外,在半导体单元的封装工序中液态的树脂粘合剂的粘度低,因此短时间可以完成封装材料的封入,从而降低了封装成本。
上述树脂粘合剂及上述填充材料最好是一液性。
通过这种构成,容易使填充材料均匀分散,成为适合LSI制造的封装材料。
上述树脂粘合剂最好具有下述构成:上述碳酸酐和上述聚环氧丙烷的当量比为0.8~1.1、上述硬化触媒对树脂粘合剂整体的重量比为0.3~3%、所述流变改性剂对树脂粘合剂整体的重量比为0.02~0.3%。
本发明的第二半导体单元的封装材料,是填充半导体单元和衬底之间的间隙并使两者连接的封装材料,包括:至少包含聚环氧丙烷、碳酸酐、流变改性剂及潜在性硬化触媒的重量比为80~25%的树脂粘合剂和由绝缘物质构成的重量比为20~75%的填充材料。而且,可以通过首先将碳酸酐和填充材料的一部分混合,在使该混合物老化后,再加入聚环氧丙烷及填充材料的其余部分来调整。
通过这种构成,抑制了碳酸酐中的游离酸和填充材料表面上的极性基之间的相互作用,因此降低了封装材料的触变指数。
附图的简要说明
图1是说明实施例的半导体单元的构造的剖面图。
图2是图1所示的半导体单元的连接部的放大的部分剖面图。
图3是说明通过实施例的柱栓隆起方式形成的半导体单元的构造的剖面图。
图4(a)~(e)是实施例的半导体单元的倒装式封装工序中的构造的变化的剖面图。
图5是说明实施例的半导体单元的倒装式封装工序的顺序的流程图。
图6是说明实施例中使用的树脂粘合剂中的双酚型环氧树脂的一般的结构式的图。
图7是说明实施例中使用的树脂粘合剂中的三烷基四氢酞酸酐酸的一般结构式的图。
图8是说明通过焊锡隆起电极连接的现有的半导体单元的构造的剖面图。
图9是说明通过低熔点金属层连接的现有的半导体单元的构造的剖面图。
图10是说明通过封装树脂的硬化收缩应力连接的现有的半导体单元的构造的剖面图。
图11是说明通过各向异性导电粘着剂连接的现有的半导体单元的构造的剖面图。
图12是说明通过导电粘着剂连接的现有的半导体单元的构造的剖面图。
以下参照附图说明本发明的实施例。
图1是说明实施例的半导体单元的封装体的剖面图,图2是说明其连接部附近的放大的部分剖面图,该半导体单元的封装体,是通过上述的倒装式封装方式形成的。在图1及图2中,符号1表示LSI芯片等半导体器件,符号2表示半导体器件1的一部分上设置的电极焊盘。符号3表示由金构成的隆起电极,符号4表示由特殊环氧树脂和银钯(AgPd)合金等导电粉为主要成份的混合物(导电粘着剂)构成的导电粘着层。符号6表示用于搭载半导体器件1的陶瓷衬底,符号5表示衬底6上的端子电极。符号7表示由酸酐硬化型环氧树脂为主要成份的封装材料构成的封装层。该封装层7为,采用在硬化前的流动状态下触变指数为1.1以下、粘度为100Pa·s的物质,在半导体器件1-衬底6间利用毛细现象注入该封装材料后,使其硬化的物质。所谓触变指数,是指剪切速度为ε、粘度为η时,用Δη/Δε表示的指标,在此,示出剪切速度为2(l/ec)~20(l/sec)时的值。
此外,图3是说明通过使用所谓的柱栓隆起电极的倒装式封装方式形成的半导体单元的封装体的剖面图。图3所示的半导体单元的封装体,基本上与上述图1所示的半导体单元的封装体大致相同,但是在图3所示的半导体单元的封装体中,唯一的不同点是用两级突起状柱栓隆起电极14取代了图1所示的隆起电极3。这样,通过采用由柱栓隆起电极14形成的倒装式封装体,如后面所详述的那样,具有能应付高密度设置更多电极焊盘的半导体器件的优点。
其次,参照图4(a)~(e)及图5来说明使用图3所示的柱栓隆起电极14倒装式封装工序。图4(a)~(e)是说明倒装式封装工序中半导体单元的封装体的变化的剖面图,图5是说明倒装式封装工序的流程的流程图。以下,沿图5所示的各个步骤,说明封装工序。
首先,在步骤ST1中,使用Au线在半导体器件1(LSI芯片)的各电极焊盘2上形成柱栓隆起电极14,在步骤ST2中,进行在各柱栓隆起电极14上压出平坦面的平整工序,使各柱栓隆起电极14的末端面对准。
其次,在步骤ST3中,如图4(a)~(e)所示,在将柱栓隆起电极14侧向下的状态,使该半导体器件1位于涂敷导电粘着剂4a的衬底20的上方,使其从该状态下降,将柱栓隆起电极14在导电粘着剂4a中浸渍之后,将半导体器件向上方提起,将导电粘着剂4a一次转印到各柱栓隆起电极14上。
其次,在步骤ST4、ST5中,如图4(d)所示,将半导体器件1搭载到设有多个端子电极5的陶瓷衬底6上。此时,使半导体器件1的各柱栓隆起电极14和衬底6上的各端子电极5分别对准,通过加热使导电粘着剂硬化,形成导电粘着层4。由此,使半导体器件1的柱栓隆起电极14和衬底6的端子电极5电连接。
其次,在步骤ST6中,进行连接状态的检查,如果电连接状态不良(NG时),则在步骤ST7中进行芯片(半导体器件)的交换之后返回步骤ST4,另一方面,如果电连接状态良好(OK时),则进至步骤ST8。
其次,在步骤ST8中,将由低粘度(100Pa·s以下)、低触变指数(1.1以下)的混合物构成的封装材料在室温下注入半导体器件1和衬底6之间的间隙进行连接部的树脂封装,此后,在步骤ST9中,加热并使封装材料中的树脂粘合剂硬化。此时,如图4(e)所示,形成封装层7,通过该封装层7使半导体器件1和衬底6机械结合。
此后,在步骤ST10中,进行最终检查,结束倒装式封装工序。
在上述倒装式封装工序中使用的封装材料,是低粘度、低触变指数的,因此,即使在室温左右的低温时也能迅速进行注入,同时,即使是小的间隙封装材料也能充分注入。因此,缩短了封装所需的时间,同时可以保持通过导电粘着剂4连接的接合部的连接可靠性。此外,封装材料是以对流动性进行改性的酸酐硬化型环氧树脂和熔融二氧化硅等填充材料为主要成份的混合物,所以具有硬化后热膨胀率低的特性。这样,由于封装层7的热膨胀率低,所以可以抑制由构成半导体器件1的硅衬底和构成衬底6的例如氧化铝衬底之间的热膨胀率之差引发的热应力。此外,由这样的环氧树脂构成的封装材料耐热性高,而且粘着强度高,因此即使在高温高湿环境下也能实现稳定的连接可靠性。
此外,由于导电粘着剂4具有高韧性,所以可以缓和热应力,提高连接稳定性。
如上所述,通过上述的倒装式封装工序,可以极可靠地、稳定地连接半导体器件1和衬底6。
此外,在实施例中隆起电极是金的,但是该材料并不局限于金,例如也可以由铜等其它金属来形成。此外,隆起电极的形状也不一定非要局限于上述的柱栓隆起电极,只要是一般用于倒装式封装的都可以使用。而通过使用图3及图4(a)~(e)所示的柱栓隆起电极,可以抑制向导电粘着层的横向上的扩展,因此可以实现封装密度的大幅度提高。
此外,导电粘着剂4的材料,不局限于环氧类,只要是有韧性的材料都可以。例如,可以使用SBR、NBR、IR、BR、CR等橡胶类、丙烯酸类、聚酯类、聚酰胺类、聚醚类、聚氨基甲酸酯类、聚酰亚胺类、硅类等。作为导电粘着剂包含的导电粉,只要是一般使用的都可以,例如,银、金、钯等贵金属粉,镍、铜等贱金属粉,焊锡、银钯等合金粉,镀银的铜粉等混合粉,此外也可以使用石墨等具有导电性的非金属粉。这些导电粉可以单独使用,也可以两种以上混合使用。此外这些导电粉的粒径、形状也没有特殊的限定。
另一方面,封装材料主要由树脂粘合剂和填充材料构成,但是作为树脂粘合剂,聚环氧丙烷、酸酐、和流变改性剂是必要成份。这里使用的树脂粘合剂中的聚环氧丙烷的成份没有特殊的限定,通常使用称为环氧化合物、环氧树脂的物质。例如由图6所示的一般结构式表示的双酚型环氧树脂可溶酚醛型环氧树脂、缩水甘油醚型环氧树脂、缩水甘油酯型环氧树脂、缩水甘油胺型环氧树脂、脂环型环氧树脂、联苯型环氧树脂、萘型环氧树脂、氧化苯乙烯、烷基缩水甘油醚、烷基缩水甘油酯等。这些物质可以单独使用,也可以使用两种以上的混合物。
此外,作为这里使用的酸酐,通常可以使用作为环氧化合物、环氧树脂的硬化剂的物质。作为最优选的例子,有具有由图7所示的一般结构式表示的结构的三烷基四氢酞酸酐。此外,作为另一个优选的例子,可以举出甲基四氢苯二甲酸、甲基六氢苯二甲酸、甲基hymic等环脂类且在25℃时为液体的物质,但是并不局限于此。这些物质可以单独使用,也可以使用两种以上的混合物。特别地,通过将上述物质用作树脂粘合剂的主要成份,可以得到低粘度而且高耐热性、高耐湿性、高粘合性的封装材料。
作为封装材料的树脂粘合剂,除了上述必要成份以外,还可以根据需要为了提高耐热性、提高耐湿性、提高粘合强度、调整热膨胀率、调整流变、调整反应性等目的而添加第三粘合剂成份。
作为封装材料中的填充材料,只要是平均粒径1~50μm的粉体都可以,但是作为优选的例子,最好选用二氧化硅、氧化铝等氧化化合物,或氮化铝等氮化化合物,碳化硅等碳化化合物,硅化化合物等热稳定性好、而且热膨胀率低的物质。这些填充材料成份也可以两种以上任意组合使用。作为填充材料的量没有特殊的限制,最好与封装材料总重量的比为20~80%。通过使用这些填充材料成份,可以实现绝缘性好、而且热应力的发生小的封装材料。
此外,作为对封装材料的流动性进行改性的流变改性剂,只要是具有切断酸酐中的游离酸和填充材料表面上的极性基之间的相互作用、降低封装材料的触变指数的作用的物质都可以,作为方法没有特殊的限制。
作为优选的例子,可以举出以下方法:
(1)预先混合酸酐的一部分和填充材料,老化(可以是加热到100℃以下的老化)之后,加入聚环氧化合物和其余的填充材料以及其它添加剂来得到封装材料的方法
(2)向封装材料中添加选择性地吸附酸酐中的游离酸的物质的方法
(3)向封装材料中添加比填充材料表面上的极性基更强地产生与游离酸的相互作用的物质(不包含N-H基、O-H基的路易斯盐基化合物等)的方法
而在这里所说的路易斯盐基化合物中,有叔胺化合物、叔膦化合物、溴化四丁基铵等的季铵盐、四丁基磷鎓苯并三唑(tetrabutylphosphoniumbenzotriazolate)等季鏻盐、1-氰基-2-乙基-4-甲基咪唑等环内包含氮原子的杂环化合物。而这些是例示,路易斯盐基化合物中有非常多的物质,可以单独使用或多种混合使用这些路易斯盐基化合物。
作为封装材料的构成成份,此外还可以根据需要使用溶剂、分散剂、平整剂等流变调整剂、或者耦合剂等粘合改良剂、硬化触媒等反应调整剂。
本发明使用的由胺化合物等路易斯盐基化合物构成的流变改性剂,通常也可以作为将聚环氧丙烷与碳酸酐硬化时的硬化触媒。
而在将该流变变性剂用作封装材料的硬化触媒的情况下,为了在低温保管中也能进行反应并胶化,封装材料必须是在临使用时混合使用的二液型。另一方面,LSI用封装材料由于必须使填充材料大量地均匀分散,所以必须采用一液型。
即,本发明所说的流变改性剂可以用作二液性封装材料的硬化触媒,但不能用于一液性封装材料。
另一方面,在保管中减少添加量,使得不会胶化,则并不是不能用作一液性封装材料的硬化触媒,但是由于在此情况下硬化促进功能过低,所以在实用的硬化条件下不能得到高度的封装材料硬化特性。
本发明的特征在于,为了兼有作为一液性的保存稳定性和实用的硬化促进功能,使用潜在性硬化触媒作为硬化触媒,将胺等通常作为二液性封装材料使用的物质用作流变变性剂。这样的流变变性剂是微量的,以使其不能发挥硬化功能,仅添加具有改善界面特性的功能的量。
而所谓潜在性硬化触媒,是指通过给予热等能量来急剧地提高触媒活性的触媒,通常通过施加能量后即溶融(液化)、或者反应解离(reaction-dissociated)来提高活性。
从以上的观点出发,封装材料的组成及封装材料中的树脂粘合剂,最好具有下述的组成比:
树脂粘合剂 80~25重量%
填充材料成份 20~75重量%
而作为树脂粘合剂中的成份的聚环氧丙烷、碳酸酐、硬化触媒及流变改性剂,最好具有以下成份比:
碳酸酐/聚环氧丙烷 0.8~1.1当量比
硬化触媒/树脂粘合剂 0.3~3重量%
流变改性剂/树脂粘合剂 0.02~0.3重量%
另一方面,就衬底6来说,除了氧化铝等陶瓷衬底以外,还可以使用金属釉衬底、玻璃衬底、玻璃环氧等树脂衬底、聚合物膜等材料的衬底。
此外,关于端子电极5的材料没有特别的限制。
下面,对为了研究由上述倒装式封装工序得到的半导体单元的特性所作的具体实施例进行说明。
(实施例1)
具有上述图1所示的构造的半导体单元,由上述图4(a)~(e)所示的工序形成。此时,隆起电极由镀金形成。导电粘着剂4a由以银钯粉和韧性环氧树脂为主要成份的混合物构成,加热到120℃使其硬化。接着,使用下表1所示配方a的封装材料,在150℃使封装材料硬化。
(实施例2)
图3所示的柱栓隆起电极14,在半导体器件1的电极焊盘2上由使用金的线连接器形成。其后的工序,以与上述实施例1相同的工序及条件进行。
(实施例3)
除了封装材料的注入在减压下进行以外,在和上述实施例1相同的条件下,将半导体器件1封装到衬底6上。
(实施例4)
除了封装材料的组成采用表1所示的配方b以外,在和上述实施例2相同的条件下,将半导体器件1封装到衬底6上。
(实施例5)
除了衬底6采用玻璃环氧衬底、封装材料的组成采用表1的配方c以外,在和上述实施例2相同的条件下将半导体器件1封装到衬底6上。
(实施例6)
除了衬底6采用玻璃衬底、导电粘着剂4中的导电粉采用银粉、封装材料的组成采用表1的配方d以外,在和上述实施例2相同的条件下将半导体器件1封装到衬底6上。
(实施例7)
除了衬底6采用玻璃衬底、导电粘着剂4采用以银粉和尿脘树脂作为主要成份的物质、封装材料的组成采用表1的配方e以外,在和上述实施例2相同的条件下将半导体器件1封装到衬底6上。
(实施例8)
图1所示的隆起电极3,在半导体器件1的电极焊盘2上由镀金形成。其后的工序,是在和实施例7相同的工序和条件下将半导体器件1封装到衬底6上。
(比较例1)
除了封装材料的组成采用表1的配方f以外,在其余和实施例2相同的条件下,将半导体器件1封装到衬底6上。
(比较例2)
除了封装材料的组成采用表1的配方g以外,在其余和实施例2相同的条件下,将半导体器件1封装到衬底6上。
下表1示出了上述配方a~g的内容。
【表1】
★
(比较例3)
以现有技术例的图9所示的方式将半导体器件1封装到衬底6上。此时,作为衬底6采用氧化铝衬底,隆起电极3由金形成,在端子电极5上镀铟。将隆起电极3和端子电极5对准后,用夹具对半导体器件1加压,同时加热到170℃,使隆起电极3和端子电极5连接。接着,向半导体器件1和衬底6之间的间隙注入硅封装材料(无应力类型)并使其硬化,形成封装层10。
(比较例4)
以现有技术例的图10所示的方式将半导体器件1封装到衬底6上。此时,隆起电极3由金形成,在端子电极5上形成镀金层11,在其上涂敷丙烯酸类封装材料。将隆起电极3和端子电极5对准后,用夹具对半导体器件1加压,同时通过紫外线照射或加热使封装材料硬化,形成封装层12。
(比较例5)
以现有技术例的图11所示的方式将半导体器件1封装到衬底6上。此时,隆起电极3由金形成,衬底6由氧化铝构成。在衬底6上涂敷在环氧类粘合剂中使金粒子分散的各向异性粘着剂。将隆起电极3和端子电极5对准后,用夹具对半导体器件1加压,同时通过紫外线照射或加热使各向异性导电粘着剂硬化,形成各向异性导电粘着层13,使隆起电极3和端子电极5电和机械连接。
实施例1~8、比较例1~5所示的半导体器件使用的封装材料的粘度和触变指数及封装材料注入所需的时间如下表2所示。
【表2】
★
在实施例1~8中,注入时间短至数分以内,可知适合于实用化。与此相反,在比较例1、2中,注入时间长达数十分以上,不适合于实用化。此外,示出了这些注入时间和粘度以及触变指数之间有相关性。即,在实施例1~8中,均有低粘度(100Pa·s以下)和低触变指数(1.1以下),因此封装材料的封装时间也短。另一方面,另外如果象比较例2那样粘度超过100Pa·s、或者象比较例1那样触变指数超过1.1,则注入时间将极大。因此,封装材料的粘度在100Pa·s以下、触变指数在1.1以下时,可知封装材料的流动性上升到可以实用化的程度。
此外,为了评价实施例1~8、比较例1~5所示的半导体器件的连接稳定性而进行耐环境性试验的结果、以及环境试验的方法、条件分别示于下表3、表4。
【表3】
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【表4】
★
以下,就上述各表所示的评价结果进行说明。
在实施例1~8中,每一个在各可靠性试验中都没有发生连接稳定性的问题。此外,其中使用的封装材料都具有低粘度(100Pa·s以下)和低触变指数(1.1以下),封装材料的封装时间也短。即,表明了不管隆起电极的构造、衬底的种类、各种添加剂、导电粘着剂的种类等如何,通过使用具有低粘度(100Pa·s以下)、低触变指数(1.1以下)的封装材料,可以得到耐热冲击性等耐环境性优良、生产率也高的半导体单元的封装体。
此外,在实施例1~8中,作为流变改性剂,使用了具有比填充材料表面上的极性基和游离酸进行相互作用的功能更强的和游离酸进行相互作用的功能的路易斯盐基化合物,它们不仅对流变作了改性,而且还有聚环氧丙烷和酸酐的反应触媒的作用,因此提高了封装材料的耐热性等耐环境性。
另一方面,即使在比较例1那样使用低粘度的封装材料的情况下,在触变指数高的情况下,封装材料的注入也需要时间,在进行其后的各可靠性试验时,在焊锡耐热试验及热冲击试验中,发生有的连接部断线的现象。这被认为是由于封装材料注入时将气泡带入封装材料层,试验时封装层负荷的热应力不均匀,给导电连接部带来损伤。
此外,即使在导电粘着剂采用高韧性的物质的情况下,在封装材料采用苯酚硬化型环氧树脂类等高粘度的树脂的比较例2中,不得不加热注入封装材料,注入时,出现连接阻值高的连接部。接着,进行其后的各可靠性试验时,在热冲击试验中,连接部不稳定的地方发生断线。这被认为是由于封装材料的粘度高,由于封装材料注入时的应力导电粘着剂的接合部受到损伤。
在比较例3、4中,在热冲击试验中比较短的时间内发生连接断线。此外,在比较例4中,在高湿度试验中和焊锡耐热性试验中,连接阻值都变化很大。其理由被认为是,在比较例3中,接合部不能缓和热应力,因此发生断线。此外,在比较例4中,被认为是由于封装材料发生的热应力大,并且封装材料的吸水率高。
在比较例5中,在高温放置试验、高湿度放置试验及焊锡耐热试验中,连接阻值明显上升。这被认为是由于各向异性导电粘着剂的粘合剂的耐湿性低,并且在高温时的粘合性低。此外,在使用由耐湿性高的粘合剂构成的各向异性导电粘着剂的情况下,在热冲击试验中发生了连接部的断线。
从这些评价结果可知,本发明的半导体单元的封装体,在任何环境下都能得到高的可靠性。但是,以往,作为树脂粘合剂包含聚环氧丙烷和酸酐(硬化剂)的物质,一般没有用作以往由导电粘着剂进行的倒装式封装工序中的封装材料。其理由是因为,如果将由聚环氧丙烷和酸酐(硬化剂)构成的树脂粘合剂用作半导体单元封装时的封装材料,则封装材料的触变指数变高,因此发生只有半导体器件和衬底之间的间隙的一部分能注入的问题。
因此,在本发明中,查明触变指数高这一问题是由于酸酐包含的游离酸和绝缘填充物(filler)表面上的极性基间的相互作用,发现通过采用阻碍该相互作用的手段即可消除此问题。
此外,作为树脂粘合剂,以往没有使用包含聚环氧丙烷和酸酐(硬化剂)作为封装材料的另一个理由被认为是,一般知道由聚环氧丙烷和酸酐(硬化剂)构成的树脂粘合剂在高湿度环境中,会引起加水分解,因此如果将其用作封装材料,则会发生由导电粘着剂引起的连接的耐湿性、可靠性的问题。
因此,在本发明中,如上述各实施例所示,确认了即使将以酸酐(特别是以三烷基四氢酞酸酐为主要成份的物质)为硬化剂使用的树脂粘合剂用作半导体单元的倒装式封装工序中的封装材料,形成的封装层也具有可充分实用的耐湿性。此外还发现,以具有这样的组成的树脂粘合剂为主要成份的封装材料,粘度低,触变指数也低,因此即使在室温左右的低温状态注入也会具有能迅速渗透到小的间隙这一良好的特性。此外,由于这些特性,能够发挥高耐热冲击性等各种优良特性。
与此相反,在将由表1的配方f构成的树脂粘合剂用于倒装式封装工序的现有的半导体单元的封装体中,被认为由于封装材料具有高触变指数,因此将气泡带入封装层,在焊锡耐热试验及热冲击试验时,使导电连接部受到损伤。此外,在将由表1的配方g构成的树脂粘合剂用于倒装式封装工序的现有的半导体单元的封装体中,被认为由于具有高粘度,因此需要在70~80℃左右以加热的状态注入树脂粘合剂,因此导电连接部受到损伤,耐冲击性恶化。
表1
配方a:双酚F型环氧树脂(环氧当量162)双酚A型环氧树脂(环氧当量182)三烷基四氢酞酸酐(酸酐当量234)2-(2-甲基咪唑基乙基)-4,6-二氨基三嗪-异氰脲酸加成物重氮双环十一碳烯熔融二氧化硅 | 85phr15phr126phr1.6phr0.1phr340phr |
配方b:三烷基四氢酞酸酐(酸酐当量234)熔融二氧化硅揉和以上两种材料,在60℃老化10小时,然后加入以下材料双酚F型环氧树脂(环氧当量162)双酚A型环氧树脂(环氧当量182)2-(2-甲基咪唑基乙基)-4,6-二氨基三嗪-异氰脲酸加成物1-氰基乙基-2-乙基-4-甲基咪唑 | 126phr340phr85phr15phr1.6phr0.2phr |
配方c:双酚F型环氧树脂(环氧当量162)脂环型环氧树脂(ERL4221)※三烷基四氢酞酸酐(酸酐当量234)AMICUREPN※※溴化四丁基铵熔融二氧化硅 | 80phr20phr135phr5phr0.2phr400phr |
配方d:双酚F型环氧树脂(环氧当量162)双酚A型环氧树脂(环氧当量182)三烷基四氢酞酸酐(酸酐当量234)FUJIHARD FXE1000※※※四丁基磷鎓苯并三唑熔融二氧化硅 | 90phr10phr128phr5phr0.2phr350phr |
配方e:双酚F型环氧树脂(环氧当量162)萘型环氧树脂(环氧当量148)三烷基四氢酞酸酐(酸酐当量234)甲基四氢苯二甲酸酐(酸酐当量166)三苯膦三苯基硼酸盐四丁基磷鎓苯并三唑熔融二氧化硅 | 70phr30phr82phr40phr3.6phr0.2phr225phr |
配方f:双酚F型环氧树脂(环氧当量162)双酚A型环氧树脂(环氧当量182)三烷基四氢酞酸酐(酸酐当量234)2-(2-甲基咪唑基乙基)-4,6-二氨基三嗪-异氰脲酸加成物熔融二氧化硅 | 85phr15phr126phr1.6phr340phr |
配方g:双酚F型环氧树脂(环氧当量162)甲基改性的酚醛树脂(环氧当量113)三苯膦熔融二氧化硅 | 100phr70phr0.6phr255phr |
※ :UCC公司制造
※※ :味之素公司制造
※※※:富士化成公司制造
表2
粘度 | 触变指数 | 注入时间 | ||
实施例1、2实施例3实施例4实施例5实施例6实施例7、8比较例1比较例2 | 配方a配方a配方b配方c配方d配方e配方f配方g | 7Pa·s7Pa·s8Pa·s4Pa·s5Pa·s11Pa·s7Pa·s120Pa·s | 1.01.00.91.01.01.04.81.3 | 3.5分0.4分3分2.3分2.5分0.6分100分以上45分 |
粘度: 用E型粘度计测定25℃ 10rpm
触变指数:用E型粘度计测定25℃ 1rpm/10rpm
注入时间:在25℃封装5mm角芯片的半导体所需的时间
表3
高温放置 | 低温放置 | 热冲击 | 高温放置 | 焊锡耐热 | |
实施例1实施例2实施例3实施例4实施例5实施例6实施例7实施例8 | ○○○○○○○○ | ○○○○○○○○ | ○○○○○○○○ | ○○○○○○○○ | ○○○○○○○○ |
比较例1比较例2比较例3比较例4比较例5 | ○○○○× | ○○○○○ | ××××○ | ○○○×× | ×○○○× |
表4
判断准则 | 各试验经过后的连接阻值若为200mΩ以下则○若为200mΩ以上则× |
试验条件高温放置试验低温放置试验热冲击试验高湿度放置试验焊锡耐热试验 | 150℃、1000hr经过后的连接阻值-55℃、1000hr经过后的连接阻值150~-55℃、500cycle经过后的连接阻值121℃、100%、100hr经过后的连接阻值270℃、10sec、5cycle经过后的连接阻值 |
Claims (29)
1、一种半导体单元的封装体,其特征在于包括:
具有电极焊盘的半导体单元;
具有端子电极的衬底;
设在所述半导体单元的电极焊盘上的隆起电极;
使由具有韧性的导电粘着剂构成的所述隆起电极和衬底上的端子电极电连接的导电粘着层;
使粘度为100Pa·s以下且触变指数为1.1以下的混合物硬化而构成、并填充所述半导体单元和所述衬底之间的间隙以使两者机械结合的封装层。
2、如权利要求1所述的半导体单元的封装体,其特征在于,
所述混合物的主要成份包含:至少包含聚环氧丙烷、碳酸酐、流变改性剂及潜在性硬化触媒的树脂粘合剂和由绝缘物质构成的填充材料,
所述流变改性剂具有阻碍所述碳酸酐中的游离酸和所述填充材料表面上的极性基之间的相互作用的功能。
3、如权利要求2所述的半导体单元的封装体,其特征在于,
所述流变改性剂包含选择性地吸附碳酸酐中的游离酸的物质。
4、如权利要求2所述的半导体单元的封装体,其特征在于,
所述流变改性剂是路易斯盐基化合物。
5、如权利要求2所述的半导体单元的封装体,其特征在于,
所述流变改性剂是叔胺化合物、叔膦化合物、季铵盐、季鏻盐及环内包含氮原子的杂环化合物中的至少一种。
6、如权利要求2所述的半导体单元的封装体,其特征在于,
所述树脂粘合剂中的碳酸酐至少包含环状脂肪族酸酐。
7、如权利要求6所述的半导体单元的封装体,其特征在于,
所述环状脂肪族酸酐至少包含三烷基四氢酞酸酐。
8、如权利要求1所述的半导体单元的封装体,其特征在于,
所述半导体单元的隆起电极是两级突起状的柱栓隆起电极。
9、一种半导体单元的封装方法,在具有端子电极的衬底上搭载具有电极焊盘的半导体单元,其特征在于,所述封装方法包括下列工序:
在所述半导体单元的电极焊盘上形成隆起电极的第一工序;
在所述隆起电极的末端附近附着导电粘着剂的第二工序;
将所述隆起电极和衬底的端子电极对准,将半导体单元设置到衬底上,通过所述导电粘着剂使半导体单元的隆起电极和衬底的端子电极电连接的第三工序;
调整由粘度为100Pa·s以下、触变指数为1.1以下的混合物构成的封装材料的第四工序;
将所述封装材料填充到所述半导体单元和衬底之间的间隙中的第五工序;
使所述封装材料硬化,使所述半导体单元和衬底之间机械结合的第六工序。
10、如权利要求9所述的半导体单元的封装方法,其特征在于,
在所述第四工序中,作为所述混合物,使用以至少包含聚环氧丙烷、碳酸酐、流变改性剂及潜在性硬化触媒的树脂粘合剂和由绝缘物质构成的填充材料为主要成份的混合物,
所述流变改性剂具有阻碍所述碳酸酐中的游离酸和所述填充材料表面上的极性基之间的相互作用的功能。
11、如权利要求9所述的半导体单元的封装方法,其特征在于,
所述流变改性剂仅包含微量的作为二液性封装材料的硬化触媒使用的物质,使其不能发挥硬化触媒功能。
12、如权利要求10所述的半导体单元的封装方法,其特征在于,
在所述第四工序中,作为所述树脂粘合剂中的碳酸酐,至少包含环状脂肪族酸酐。
13、如权利要求12所述的半导体单元的封装方法,其特征在于,
在所述第四工序中,作为所述环状脂肪族酸酐,至少包含三烷基四氢酞酸酐。
14、如权利要求9所述的半导体单元的封装方法,其特征在于,
在所述第一工序中,作为所述半导体单元的隆起电极,形成两级突起状的柱栓隆起电极。
15、如权利要求9所述的半导体单元的封装方法,其特征在于,
在所述第五工序中,在室温条件下注入封装材料。
16、如权利要求9所述的半导体单元的封装方法,其特征在于,
在所述第五工序中,在减压条件下注入封装材料。
17、如权利要求9所述的半导体单元的封装方法,其特征在于,
在所述第四工序中,首先混合碳酸酐和填充材料的一部分,在老化该混合物后,加入聚环氧丙烷及填充材料的其余部分。
18、如权利要求10所述的半导体单元的封装方法,其特征在于,
所述流变改性剂包含选择性地吸附碳酸酐中的游离酸的物质。
19、如权利要求10所述的半导体单元的封装方法,其特征在于,
所述流变改性剂是路易斯盐基化合物。
20、如权利要求所述的半导体单元的封装方法,其特征在于,
所述流变改性剂是叔胺化合物、叔膦化合物、季铵盐、季鏻盐及环内包含氮原子的杂环化合物中的一种。
21、一种半导体单元的封装材料,用于填充半导体单元和衬底之间的间隙以使两者连接,其特征在于,
包括:至少包含聚环氧丙烷、碳酸酐、流变改性剂、及潜在性硬化触媒的重量比为80-25%的树脂粘合剂,和
由绝缘物质构成的重量比为20~75%的填充材料;
所述流变改性剂具有阻碍所述碳酸酐中的游离酸和所述填充材料表面上的极性基之间的相互作用的功能。
22、如权利要求21所述的半导体单元的封装材料,其特征在于,
所述流变改性剂包含选择性地吸附碳酸酐中的游离酸的物质。
23、如权利要求21所述的半导体单元的封装材料,其特征在于,
所述流变变性剂是路易斯盐基化合物。
24、如权利要求21所述的半导体单元的封装材料,其特征在于,
所述流变变性剂是叔胺化合物、叔膦化合物、季铵盐、季鏻盐及环内包含氮原子的杂环化合物中的至少一种。
25、如权利要求21所述的半导体单元的封装材料,其特征在于,
所述树脂粘合剂中的碳酸酐至少包含环状脂肪族酸酐。
26、如权利要求25所述的半导体单元的封装材料,其特征在于,
所述环状脂肪族酸酐至少包含三烷基四氢酞酸酐。
27、如权利要求21所述的半导体单元的封装材料,其特征在于,
所述树脂粘合剂及所述填充材料被一液化。
28、如权利要求21所述的半导体单元的封装材料,其特征在于,
所述树脂粘合剂具有下述组成:
所述碳酸酐和所述聚环氧丙烷的当量比为0.8~1.1,
所述硬化触媒对树脂粘合剂整体的重量比为0.3~3%,
所述流变改性剂对树脂粘合剂整体的重量比为0.02~0.3%。
29、一种半导体单元的封装材料,一液填充半导体单元和衬底之间的间隙以使两者连接,其特征在于,
包括:至少包含聚环氧丙烷、碳酸酐、流变变性剂及潜在性硬化触媒的重量比为80~25%的树脂粘合剂,和
由绝缘物质构成的重量比为20~75%的填充材料,
通过首先混合碳酸酐和填充材料的一部分,老化该混合物后,再加入聚环氧丙烷及填充材料的其余部分来调整。
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP144373/1995 | 1995-06-12 | ||
JP144373/95 | 1995-06-12 | ||
JP14437395 | 1995-06-12 | ||
JP308798/1995 | 1995-11-28 | ||
JP07308798A JP3093621B2 (ja) | 1995-01-30 | 1995-11-28 | 半導体装置の実装方法 |
JP308798/95 | 1995-11-28 | ||
US08/593,675 US5641996A (en) | 1995-01-30 | 1996-01-29 | Semiconductor unit package, semiconductor unit packaging method, and encapsulant for use in semiconductor unit packaging |
US08/593,675 | 1996-01-29 |
Publications (2)
Publication Number | Publication Date |
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CN1185231A true CN1185231A (zh) | 1998-06-17 |
CN1101594C CN1101594C (zh) | 2003-02-12 |
Family
ID=27318812
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96194158A Expired - Fee Related CN1101594C (zh) | 1995-06-12 | 1996-06-12 | 半导体单元的封装体、其封装方法及其封装材料 |
Country Status (9)
Country | Link |
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CN (1) | CN1101594C (zh) |
AU (1) | AU695142B2 (zh) |
CA (1) | CA2221286A1 (zh) |
FI (1) | FI974488A (zh) |
ID (2) | ID19377A (zh) |
IN (1) | IN192021B (zh) |
NO (1) | NO321429B1 (zh) |
SE (1) | SE522253C2 (zh) |
WO (1) | WO1996042106A1 (zh) |
Cited By (7)
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CN102800634A (zh) * | 2011-05-23 | 2012-11-28 | 松下电器产业株式会社 | 半导体封装器件的安装结构体及制造方法 |
CN103107167A (zh) * | 2007-10-09 | 2013-05-15 | 英飞凌科技股份有限公司 | 半导体芯片封装、半导体芯片组件和制造器件的方法 |
CN103477428A (zh) * | 2011-05-13 | 2013-12-25 | 富士电机株式会社 | 半导体器件及其制造方法 |
CN107034028A (zh) * | 2015-12-04 | 2017-08-11 | 三星电子株式会社 | 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 |
CN108573934A (zh) * | 2017-03-09 | 2018-09-25 | 日月光半导体制造股份有限公司 | 半导体装置封装及其制造方法 |
CN109637991A (zh) * | 2017-10-05 | 2019-04-16 | 英飞凌科技股份有限公司 | 半导体管芯附接系统和方法 |
US10894935B2 (en) | 2015-12-04 | 2021-01-19 | Samsung Electronics Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1998033217A1 (en) * | 1997-01-24 | 1998-07-30 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing thereof |
JPH10270496A (ja) | 1997-03-27 | 1998-10-09 | Hitachi Ltd | 電子装置、情報処理装置、半導体装置並びに半導体チップの実装方法 |
US6407461B1 (en) | 1997-06-27 | 2002-06-18 | International Business Machines Corporation | Injection molded integrated circuit chip assembly |
DE69934153T2 (de) * | 1998-02-02 | 2007-09-20 | Shin-Etsu Chemical Co., Ltd. | Verfahren zur Montage von Flip-Chip-Halbleiterbauelementen |
CN1143373C (zh) | 1998-07-01 | 2004-03-24 | 精工爱普生株式会社 | 半导体装置及其制造方法、电路基板和电子装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63268724A (ja) * | 1987-04-24 | 1988-11-07 | Matsushita Electric Works Ltd | 液状エポキシ樹脂組成物 |
JP2515344B2 (ja) * | 1987-07-24 | 1996-07-10 | 松下電工株式会社 | 封止用一液性の液状エポキシ樹脂組成物 |
JPH04130633A (ja) * | 1990-09-20 | 1992-05-01 | Matsushita Electron Corp | 半導体装置とその製造方法およびそれに用いるキャピラリ |
US5194930A (en) * | 1991-09-16 | 1993-03-16 | International Business Machines | Dielectric composition and solder interconnection structure for its use |
JP2826049B2 (ja) * | 1992-11-18 | 1998-11-18 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
US5436503A (en) * | 1992-11-18 | 1995-07-25 | Matsushita Electronics Corporation | Semiconductor device and method of manufacturing the same |
JPH06279654A (ja) * | 1993-02-26 | 1994-10-04 | Matsushita Electric Works Ltd | 液状エポキシ樹脂組成物 |
JPH06313027A (ja) * | 1993-05-06 | 1994-11-08 | Matsushita Electric Works Ltd | 封止用エポキシ樹脂成形材料 |
-
1996
- 1996-06-11 ID IDP980877A patent/ID19377A/id unknown
- 1996-06-11 ID IDP980876A patent/ID19376A/id unknown
- 1996-06-12 CN CN96194158A patent/CN1101594C/zh not_active Expired - Fee Related
- 1996-06-12 CA CA002221286A patent/CA2221286A1/en not_active Abandoned
- 1996-06-12 WO PCT/JP1996/001600 patent/WO1996042106A1/en active Application Filing
- 1996-06-12 AU AU60154/96A patent/AU695142B2/en not_active Ceased
- 1996-11-06 IN IN1083CA1996 patent/IN192021B/en unknown
-
1997
- 1997-12-10 SE SE9704602A patent/SE522253C2/sv not_active IP Right Cessation
- 1997-12-11 NO NO19975833A patent/NO321429B1/no not_active IP Right Cessation
- 1997-12-11 FI FI974488A patent/FI974488A/fi not_active Application Discontinuation
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CN103107167A (zh) * | 2007-10-09 | 2013-05-15 | 英飞凌科技股份有限公司 | 半导体芯片封装、半导体芯片组件和制造器件的方法 |
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CN103477428B (zh) * | 2011-05-13 | 2016-10-19 | 富士电机株式会社 | 半导体器件及其制造方法 |
CN102800634A (zh) * | 2011-05-23 | 2012-11-28 | 松下电器产业株式会社 | 半导体封装器件的安装结构体及制造方法 |
CN102800634B (zh) * | 2011-05-23 | 2016-06-29 | 松下知识产权经营株式会社 | 半导体封装器件的安装结构体及制造方法 |
CN107034028A (zh) * | 2015-12-04 | 2017-08-11 | 三星电子株式会社 | 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 |
US10894935B2 (en) | 2015-12-04 | 2021-01-19 | Samsung Electronics Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
CN107034028B (zh) * | 2015-12-04 | 2021-05-25 | 三星电子株式会社 | 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 |
CN108573934A (zh) * | 2017-03-09 | 2018-09-25 | 日月光半导体制造股份有限公司 | 半导体装置封装及其制造方法 |
US10573624B2 (en) | 2017-03-09 | 2020-02-25 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
CN108573934B (zh) * | 2017-03-09 | 2020-08-21 | 日月光半导体制造股份有限公司 | 半导体装置封装及其制造方法 |
CN109637991A (zh) * | 2017-10-05 | 2019-04-16 | 英飞凌科技股份有限公司 | 半导体管芯附接系统和方法 |
Also Published As
Publication number | Publication date |
---|---|
NO975833L (no) | 1998-02-03 |
WO1996042106A1 (en) | 1996-12-27 |
SE522253C2 (sv) | 2004-01-27 |
FI974488A0 (fi) | 1997-12-11 |
ID19376A (id) | 1998-07-09 |
SE9704602D0 (sv) | 1997-12-10 |
AU695142B2 (en) | 1998-08-06 |
AU6015496A (en) | 1997-01-09 |
FI974488A (fi) | 1998-02-09 |
CA2221286A1 (en) | 1996-12-27 |
ID19377A (id) | 1998-07-09 |
NO975833D0 (no) | 1997-12-11 |
NO321429B1 (no) | 2006-05-08 |
CN1101594C (zh) | 2003-02-12 |
SE9704602L (sv) | 1998-02-05 |
IN192021B (zh) | 2004-02-07 |
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