CN102939645B - 连接结构体的制造方法 - Google Patents

连接结构体的制造方法 Download PDF

Info

Publication number
CN102939645B
CN102939645B CN201180029598.1A CN201180029598A CN102939645B CN 102939645 B CN102939645 B CN 102939645B CN 201180029598 A CN201180029598 A CN 201180029598A CN 102939645 B CN102939645 B CN 102939645B
Authority
CN
China
Prior art keywords
heating
temperature
anisotropic
soft solder
pressurization operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180029598.1A
Other languages
English (en)
Other versions
CN102939645A (zh
Inventor
五十岚智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of CN102939645A publication Critical patent/CN102939645A/zh
Application granted granted Critical
Publication of CN102939645B publication Critical patent/CN102939645B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0242Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections comprising means for controlling the temperature, e.g. making use of the curie point
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C09J163/10Epoxy resins modified by unsaturated compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C08F230/085Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56Polyhydroxyethers, e.g. phenoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109Indium [In] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29313Bismuth [Bi] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0133Ternary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04Soldering or other types of metallurgic bonding
    • H05K2203/0425Solder powder or solder coated metal powder
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • Y10T29/49149Assembling terminal to base by metal fusion bonding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24826Spot bonds connect components

Abstract

在利用软钎料粒子将电气元件和布线基板各向异性导电连接之际,为了降低热固化性粘合剂的正式加热温度,实现良好的连接可靠性,在通过将布线基板和电气元件各向异性导电连接而制造连接结构体时,作为各向异性导电粘合剂,使用将熔融温度为Ts的软钎料粒子分散到最低熔融温度为Tv的绝缘性的丙烯酸类热固化性树脂中的材料。在第1加热加压工序中,使各向异性导电粘合剂熔融流动,从布线基板和电气元件的间隙压出,进而使其预固化。在第2加热加压工序中,使软钎料粒子熔融,在布线基板的电极和电气元件的电极之间形成金属结合,使各向异性导电粘合剂正式固化。使第1加热加压工序的加热温度为T1、加压压力为P1,第2加热加压工序的加热温度为T2、加压压力为P2时,满足Tv<T1<Ts<T2、P1>P2。

Description

连接结构体的制造方法
技术领域
本发明涉及制造布线基板的电极和电气元件的电极各向异性导电连接而成的连接结构体的方法。
背景技术
有人提出了将电气元件例如半导体芯片的凸台和布线基板的电极各向异性导电连接时,在半导体凸台和布线基板的电极之间配置将熔融温度为180~185℃的软钎料粒子分散到固化温度为195~200℃的环氧类热固化性粘合剂中的各向异性导电薄膜,通过加热加压使软钎料粒子熔融,将半导体芯片的凸台和布线基板的电极金属结合的方案(专利文献1)。这时,以120~130℃的温度进行预加热,使环氧类热固化性粘合剂固化到某种程度,以便在软钎料熔融时能够限制其流动范围,进而以200~210℃的温度进行正式加热,使软钎料粒子熔融。
专利文献1:日本特开平8-186156号公报。
可是采用专利文献1的方法时,由于正式加热的温度高达200~210℃,所以存在着半导体芯片容易受到损伤的问题。因此需要寻找能以较低的温度进行正式加热的方法。另外还需要寻找这时也能够防止邻接的端子之间出现的短接而且在热冲击循环测试、耐高温高湿测试中连接可靠性不下降的方法。
发明内容
本发明的目的就是要解决上述现有技术的问题,提供能够在利用软钎料粒子使电气元件和布线基板通过金属结合实现各向异性导电连接之际,将成为软钎料粒子的分散介质的绝缘性的热固化性粘合剂的正式加热温度设定成为较低的温度,在防止邻接的端子之间出现的短接的同时,还能够实现良好的连接可靠性的方法。
为了达到上述目的,发明人刻苦研究的结果,发现作为软钎料粒子采用例如Sn-Bi类软钎料粒子这样的低温熔融软钎料粒子,进而使用能够在比较低的温度中固化的丙烯酸类各向异性导电粘合剂,而且在软钎料粒子的熔融温度和丙烯酸类各向异性导电粘合剂显示的最低熔融温度、预加热温度和正式加热温度之间以及预加热时的压力和正式加热时的压力之间存在着一定的大小关系,根据该发现完成了本发明。
就是说,本发明提供一种制造方法以及用该制造方法制造的连接结构体,所述制造方法制造布线基板的电极和电气元件的电极各向异性导电连接而成的连接结构体,具有隔着各向异性导电粘合剂将电气元件承载于布线基板上,通过对该电气元件进行加热加压,将布线基板的电极和电气元件的电极连接的加热加压工序,所述制造方法的其特征在于:
作为各向异性导电粘合剂,使用熔融温度为Ts的软钎料粒子分散到绝缘性的丙烯酸类热固化性树脂中而成的材料,各向异性导电粘合剂显示的最低熔融粘度的温度为Tv;
加热加压工序具有第1加热加压工序和随后的第2加热加压工序;
使第1加热加压工序的加热温度为T1、加压压力为P1,
使第2加热加压工序的加热温度为T2、加压压力为P2时,满足下述式(1)及(2);
在第1加热加压工序中,使各向异性导电粘合剂熔融流动,从布线基板和电气元件的间隙压出,进而使其预固化;
在第2加热加压工序中,使软钎料粒子熔融,在布线基板的电极和电气元件的电极之间形成金属结合,并且使各向异性导电粘合剂正式固化。
在本发明的制造方法中,因为作为构成各向异性导电粘合剂的导电粒子采用低温熔融软钎料粒子,作为构成各向异性导电粘合剂的绝缘性热固化性粘合剂,使用可以低温固化的丙烯酸类热固化性树脂来取代环氧类热固化性粘合剂,而且在软钎料粒子的熔融温度和各向异性导电粘合剂显示的最低熔融粘度的温度、预加热温度和正式加热温度之间以及预加热时的压力和正式加热时的压力之间设定特定的大小关系,所以利用软钎料粒子将电气元件和布线基板金属结合从而实现各向异性导电连接之际,能够将成为软钎料粒子的分散介质的绝缘性的热固化性粘合剂的正式加热温度设定成为较低的温度(例如150~170℃),而且能够在防止邻接的端子之间出现短接的同时,还能够实现良好的连接可靠性。
附图说明
图1是本发明的加热加压工序的说明图。
具体实施方式
本发明是制造布线基板的电极和电气元件的电极各向异性导电连接而成的连接结构体的方法,是具有隔着各向异性导电粘合剂将电气元件承载于布线基板上,通过对该电气元件进行加热加压,将布线基板的电极和电气元件的电极连接的加热加压工序的制造方法。
〈加热加压工序〉
在本发明中,加热加压工序具有第1加热加压工序和随后的第2加热加压工序。图1示出表示对于时间而言的温度T(点划线)、压力P(实线)及各向异性导电粘合剂的熔融粘度η(虚线)的变化的曲线图。
第1加热加压工序是将存在于布线基板和电气元件之间的各向异性导电粘合剂加热到表示其最低熔融粘度η0的温度(即最低熔融粘度温度Tv)以上而使其流动,从而使过剩的各向异性导电粘合剂从它们之间压出并排除的工序。所以,在该工序中不使软钎料粒子熔融。另外,还使各向异性导电粘合剂熔融后流动,使一部分各向异性导电粘合剂固化。这时在第1加热加压工序中,使各向异性导电粘合剂的固化率为8~80%,最好为10~60%。其结果如图1所示,各向异性导电粘合剂显示最低熔融粘度后,粘度逐渐上升。在这里,固化率是通过红外分光测量,根据起因于丙烯酸类化合物的链烯烃的特性吸收的减少而定义的数值。
另外,在第2加热加压工序中,继第1加热加压工序之后,使加热温度从T1开始上升,上升到加热温度T2为止。这样,将软钎料粒子加热到其熔融温度Ts以上而使其熔融,从而使布线基板的电极和电气元件的电极金属结合,同时还使各向异性导电粘合剂正式固化,各向异性导电粘合剂的固化率最好至少为80%以上,理想的状态是100%。
另外,在本发明中,与第1加热加压工序的加压压力P1相比,将第2加热加压工序的加压压力P2设定成为低压。这是为了有效地从被各向异性导电粘合剂连接的布线基板的细微的布线图案之间除去空隙。就是说,为了将残留在布线基板的细微的布线图案之间的空隙从布线基板和电气元件之间的各向异性导电粘合剂中向外部挤出,如果粘合剂的熔融粘度过于低,就不容易挤出空隙,所以必须向粘合剂的熔融粘度比较高的期间挤出空隙。因此,需要较高地设定第1加热加压工序的压力。另一方面,挤出空隙后,使粘合剂中的热固化性树脂正式固化之际,压力如果过于高,在树脂固化引起的收缩和集中于电气元件(例如半导体芯片)的电极(例如镀金凸台)的加压压力的作用下,布线基板的细微的布线图案就产生变形。因此,与第1加热加压工序的加压压力P1相比,将第2加热加压工序的加压压力P2设定成为低压。
因此,在本发明中,加热加压工序中的温度和压力需要满足下述式(1)及(2)的关系。
在本发明中,因为各向异性导电粘合剂的具体的最低熔融粘度温度Tv如果过于低就难以形成膜(薄膜),如果过于高又担心软钎料熔融掉,所以首选70~150℃,最好为80~120℃。
第1加热加压工序的具体的加热温度T1如果过于低各向异性导电粘合剂的流动性就下降,如果过于高又担心软钎料熔融掉,所以首选80~160℃,最好为90~130℃。
软钎料粒子的熔融温度Ts如果过于低连接可靠性就下降,如果过于高又担心热压接时不能够形成金属结合,所以首选100~210℃,最好为130~170℃。
第2加热加压工序的加热温度T2如果过于低软钎料就不能够熔融,如果过于高又担心各向异性导电粘合剂回弹(剥离),所以首选130~220℃,最好为130~190℃。
T1和Tv之差如果过于小,就有可能产生热压接时的按入不足的倾向;如果过于大,各向异性导电粘合剂的固化则过快,有可能产生热压接时的按入不足的倾向,所以首选10~40℃,最好为10~30℃。
Ts和T1之差如果过于小,在第1加热加压工序中就会出现软钎料的熔融,成为短接的原因;如果过于大,压接工序本身的生产节拍时间就变长,生产效率下降。所以首选2~110℃,最好为10~30℃。
T2和Ts之差如果过于小,软钎料就不能够充分熔融;如果过于大,升温就需要时间,压接工序本身的生产节拍时间就变长,生产效率下降。所以首选2~100℃,最好为10~50℃。
在本发明的制造方法中,从能够实现无空隙的连接结构体的这一点上说,加压压力从P1向P2切换的时刻,首选在各向异性导电粘合剂的最低熔融粘度温度Tv的-10℃~+10℃的温度范围内开始其切换。另外,从可以低压连接这一点上说,首选在直至达到最低熔融粘度温度Tv+40℃的温度为止的期间(即图1的Tm1的时刻)使加压压力P1达到加压压力P2。此外,在图1的Tm2的时刻结束第2加热加压工序。
〈各向异性导电粘合剂〉
在本发明的制造方法中,作为在各向异性导电连接所使用的各向异性导电粘合剂,使用将熔融温度为Ts的软钎料粒子分散到最低熔融粘度温度Tv的绝缘性的丙烯酸类热固化性树脂中后膏状或薄膜状成形的材料。
软钎料粒子作为各向异性导电连接用的导电粒子发挥作用,其熔融温度Ts比较低,首选130~210℃,最好为130~170℃。在成分上,首选使用无铅的材料。具体地说,可以列举Sn-Cd类软钎料,例如Sn(67%)-Cd(33%)共晶软钎料(Ts=176℃),Sn(60%)-Cd(40%)共晶软钎料(Ts=144℃);Sn-Bi类软钎料,例如Sn(42%)-Bi(58%)共晶软钎料(Ts=138℃),Sn(40%)-Bi(56%)-Zn(4%)共晶软钎料(Ts=130℃),Sn(25.9%)-Bi(53.9%)-Cd(20.2%)共晶软钎料(Ts=103℃);Sn-In类软钎料,例如Sn(48%)-In(52%)共晶软钎料(Ts=117℃),Sn(17.3%)-Bi(57.5%)-In(25.2%)共晶软钎料(Ts=78.8℃)等。
软钎料粒子的平均粒径如果过于小就不参与连接,过于大则就有可能在连接端子之间出现短接,所以首选1~70μm,更希望为2~40μm。
软钎料粒子在各向异性导电粘合剂中的含有量如果过少就会带来连接不良,过多则就有可能在连接端子之间出现短接,所以对于树脂固态部分(即固化性丙烯酸类化合物和成膜用树脂的合计)100质量份而言,首选1~50质量份,更希望为2~30质量份。
构成各向异性导电粘合剂的绝缘性的丙烯酸类热固性树脂,至少包含固化性丙烯酸类化合物、热固化引发剂、成膜用树脂。在这里,作为固化性丙烯酸类化合物,是具有1个以上、首选具有2个丙烯酰基或甲基丙烯酰基(以下称作“(甲基)丙烯酰基”)的化合物。在这里,为了提高导通可靠性,使固化性丙烯酸类化合物的一个分子中的(甲基)丙烯酰基的数量为2以上,首选2个。
作为固化性丙烯酸类化合物的具体的例子,可以列举聚乙二醇二丙烯酸酯、磷酸酯型丙烯酸酯、2-羟乙基丙烯酸酯、2-羟基丙基丙烯酸酯、4-羟基丁基丙烯酸酯、异丁基丙烯酸酯、叔丁基丙烯酸酯、异辛基丙烯酸酯、双苯氧基乙醇芴二丙烯酸酯、2-丙烯酰氧基乙基丁二酸酯、十二烷基丙烯酸酯、十八碳酰丙烯酸酯、异冰片丙烯酸酯、三环癸二醇二甲基丙烯酸酯、环已基丙烯酸酯、三(2-羟乙基)三聚异氰酸酯三丙烯酸酯、四氢化糠基丙烯酸酯、邻苯二甲酸二缩水甘油醚丙烯酸酯、乙氧基化双酚A二甲基丙烯酸酯、双酚A型环氧丙烯酸酯、聚氨酯丙烯酸酯、环氧丙烯酸酯等以及相当于它们的(甲基)丙烯酸酯。
此外,从可以获得较高的粘合强度和导通可靠性这一点上说,作为固化性丙烯酸类化合物,最好用下述比例一并采用5~40质量份的二官能丙烯酸酯、10~40质量份的尿烷丙烯酸酯、0.5~5质量份的磷酸酯型丙烯酸酯。在这里,为了提高固化物的凝聚力、提高导通可靠性而配合二官能丙烯酸酯,为了提高对于聚酰亚胺而言的粘合性而配合尿烷丙烯酸酯,为了提高对于金属而言的粘合性而配合磷酸酯型丙烯酸酯。
固化性丙烯酸类化合物在丙烯酸类热固化性树脂中的配合量如果过少就会导致导通可靠性下降,过多则会导致粘合强度下降,所以首选树脂固态部分(即固化性丙烯酸类化合物和成膜用树脂的合计)的20~70质量%,更希望为30~60质量%。
作为成膜用树脂,可以使用聚酯树脂、聚氨酯树脂、苯氧基树脂、聚酰胺、EVA等热塑性弹性体等。其中,为了提高耐热性、粘合性,可以首选使用聚酯树脂、聚氨酯树脂、苯氧基树脂。作为理想的苯氧基树脂,能够列举双酚A型苯氧基树脂、含有芴骨骼的苯氧基树脂等。
作为热固化引发剂,可以使用热分解后产生自由基的有机过氧化物及偶氮化合物,例如可以列举将有机过氧化物换算,或二异丁酰基过氧化物、1,1,3,3-四甲基丁基过氧化-2-乙基己酸酯、二月桂酰基过氧化物、二(3,5,5-三甲基己酰基)过氧化物、叔丁基过氧化新戊酸酯、叔已基过氧化新戊酸酯、叔丁基过氧化新庚酸酯、叔丁基过氧化新癸酸酯、叔已基过氧化新癸酸酯、二(2-乙基已基)过氧化二碳酸酯、二(4-叔丁基环已基)过氧化二碳酸酯、1,1,3,3-四甲基丁基过氧化新癸酸酯、二-仲丁基过氧化二碳酸酯、二-正丙基过氧化二碳酸酯、枯基过氧化新癸酸酯等。能够同时使用它们中的两种以上。另外,作为偶氮基化合物,可以列举偶氮二丁腈等。
各向异性导电粘合剂中的热固化引发剂的使用量如果过少就会没有反应性,过多则会导致各向异性导电薄膜的凝聚力下降,所以对于固化性丙烯酸类化合物100质量份而言,首选1~10质量份,更希望为3~7质量份。
本发明使用的各向异性导电粘合剂,可以采用将以上的软钎料粒子根据需要和甲苯等溶剂一起均匀地混合分散到绝缘性的丙烯酸类热固化性粘合剂之中,作为膏状或按照常规的方法薄膜成形地制作。进而在各向异性导电粘合剂中,还可以包含硅烷耦合剂、橡胶成分、无机填料等填料类及各种添加剂。
〈布线基板、电气元件等〉
作为本发明的制造方法能够采用的布线基板、电气元件、电极,可以使用现有的众所周知的元件。例如作为布线基板,可以列举玻璃基板、陶瓷基板、聚酰亚胺柔软基板、硅基板等。作为电极,可以列举铜、铝、银、金等金属电极、ITO等金属复合氧化物电极等。这时的电极形状没有特别的规定,既可以是衬垫状也可以是凸台状。另外,作为电气元件,可以使用裸芯片、芯片尺寸封装、IC模块等半导体元件、LED等光学元件等、柔性布线板等各种电气元件,其电极也既可以是衬垫状也可以是凸台状。
此外,采用本发明的制造方法制造的连接结构体,通过规定的加热加压工序,隔着低温熔融软钎料粒子分散到低温固化性的丙烯酸类热固化性树脂中的各向异性导电粘合剂而将布线基板的电极和电气元件的电极之间各向异性导电连接。因此,能够实现良好的连接可靠性。
实施例
下面,通过实施例具体讲述本发明。
实施例1~2、比较例1~5
首先,如下所述地制作各向异性导电粘合剂A及B。
(各向异性导电薄膜A)
混合30质量份的双A型苯氧基树脂(YP50、新日铁化学株式会社)、30质量份的液态丙烯化合物(EB3701、DAICEL-CYTEC株式会社)、1质量份的有机过氧化物固化剂(PEROCTA 0(パーオクタ0)、日油株式会社)、丙烯酸类硅烷耦合剂(A-172、MOMENTIVE PERFORMANCE MATERIALS公司),进而将平均粒径10μm、熔融温度138℃的共晶SnBi软钎料添加到树脂固态部分中,以便成为20质量%,再加入甲苯,制成固态物为50wt%的各向异性导电组合物,使用棒状涂料器涂敷到经过剥离处理的PET上,在70℃的恒温箱中干燥5分钟,制作出35μm厚的各向异性导电薄膜。
(各向异性导电薄膜B)
除了将各向异性导电薄膜A的共晶SnBi软钎料变成共晶SnIn软钎料之外,都和各向异性导电薄膜A同样地制作。
(连接结构体的制造)
在设定成为40℃的平盘上叠加布线板(端子导体图案宽50μm、图案间距100μm)、各向异性导电薄膜A或B以及柔性布线板(端子导体图案宽50μm、图案间距100μm),以表1的条件加热加压,制造出连接结构体。
(评价)
对于获得的连接结构体,测试了邻接端子之间是否发生短接(30V、充电1分钟)、能够确保相当于jedec的3级的耐湿性(30℃、70%RH、168小时)的高压锅(PCT(60℃、95%RH))处理时间及热冲击处理(H/S(-55℃(15分钟)←→125℃(15分钟)))循环数。获得的结果见表1。
表1
由表1可知:满足式(1)及(2)的实施例1及2,可以用150℃或170℃这种比较低的温度(第2加热加压工序)进行正式压接,获得的连接结构体未见邻接端子之间的短接,还显示出形成金属结合的结果、良好的可靠性。
另一方面,比较例1的加热加压工序没有分为两个阶段,加热温度是190℃,而且压力恒定为较低的级别(0.5Mpa),所以成为按入不足,虽然邻接端子之间没有产生短接,但是可靠性试验的结果存在问题。比较例2的加热加压工序没有分为两个阶段,而且压力恒定为较高的级别(3.0Mpa), 加热温度是190℃,所以在邻接端子之间产生了软钎料粒子的熔融结合引起的短接。比较例3使用各向异性导电薄膜B,加热温度与软钎料粒子的熔融温度相比是低温的,所以没有看到形成软钎料粒子的金属结合。比较例4除了使用各向异性导电薄膜B以外,是将比较例1反复了的例子,结果和比较例1同样不理想。比较例5虽然是进行2个阶段加热的例子,但是压力恒定,而且第2加热加压工序的加热温度为180℃,所以在邻接端子间产生了软钎料粒子的熔融结合引起的短接。
产业上的利用可能性
在本发明的制造方法中,因为作为构成各向异性导电粘合剂的导电粒子采用低温熔融软钎料粒子,作为构成各向异性导电粘合剂的绝缘性的热固化性粘合剂,使用可以低温固化的丙烯酸类热固化性树脂,而且在软钎料粒子的熔融温度和各向异性导电粘合剂的最低熔融温度、预加热温度和正式加热温度之间以及预加热时的压力和正式加热时的压力之间设定一定的大小关系,所以利用软钎料粒子将电气元件和布线基板金属结合从而实现各向异性导电连接之际,能够将成为软钎料粒子的分散介质的绝缘性的热固化性粘合剂的正式加热温度设定成为较低的温度(例如150~170℃),能够防止邻接的端子之间出现短接,而且还能够实现良好的连接可靠性。

Claims (4)

1.一种制造方法,制造布线基板的电极和电气元件的电极各向异性导电连接而成的连接结构体,具有隔着各向异性导电粘合剂将电气元件承载于布线基板上,通过对该电气元件进行加热加压,将布线基板的电极和电气元件的电极连接的加热加压工序,所述制造方法的特征在于:
作为各向异性导电粘合剂,使用熔融温度为Ts的软钎料粒子分散到绝缘性的丙烯酸类热固化性树脂中而成的材料,各向异性导电粘合剂显示的最低熔融粘度的温度为Tv;
加热加压工序具有第1加热加压工序和随后的第2加热加压工序;
使第1加热加压工序的加热温度为T1、加压压力为P1,
使第2加热加压工序的加热温度为T2、加压压力为P2时,满足下述式(1)及(2);
在第1加热加压工序中,使各向异性导电粘合剂熔融流动,从布线基板和电气元件的间隙压出,进而使其预固化;
在第2加热加压工序中,使软钎料粒子熔融,在布线基板的电极和电气元件的电极之间形成金属结合,并且使各向异性导电粘合剂正式固化。
2.如权利要求1所述的制造方法,其中各向异性导电粘合剂显示最低熔融粘度的温度Tv为70~150℃,第1加热加压工序的加热温度T1为80~160℃,软钎料粒子的熔融温度Ts为100~210℃,第2加热加压工序的加热温度T2为130~220℃。
3.如权利要求1或2所述的制造方法,其中T1和Tv之差为10~40℃,Ts和T1之差为2~110℃,T2和Ts之差为2~100℃。
4.如权利要求1~3的任一项所述的制造方法,其中软钎料粒子是共晶SnBi软钎料粒子或共晶SnIn软钎料粒子。
CN201180029598.1A 2010-06-15 2011-06-03 连接结构体的制造方法 Active CN102939645B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-136180 2010-06-15
JP2010136180A JP5540916B2 (ja) 2010-06-15 2010-06-15 接続構造体の製造方法
PCT/JP2011/062779 WO2011158666A1 (ja) 2010-06-15 2011-06-03 接続構造体の製造方法

Publications (2)

Publication Number Publication Date
CN102939645A CN102939645A (zh) 2013-02-20
CN102939645B true CN102939645B (zh) 2015-06-10

Family

ID=43042916

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180029598.1A Active CN102939645B (zh) 2010-06-15 2011-06-03 连接结构体的制造方法

Country Status (7)

Country Link
US (1) US8835772B2 (zh)
JP (1) JP5540916B2 (zh)
KR (1) KR101355709B1 (zh)
CN (1) CN102939645B (zh)
HK (1) HK1178688A1 (zh)
TW (1) TWI480966B (zh)
WO (1) WO2011158666A1 (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5673444B2 (ja) * 2010-10-19 2015-02-18 信越化学工業株式会社 熱圧着用シリコーンゴムシート及び電気・電子機器部品の接合方法
JP5703061B2 (ja) * 2011-02-23 2015-04-15 積水化学工業株式会社 接続構造体の製造方法
JP6231257B2 (ja) 2011-12-15 2017-11-15 デクセリアルズ株式会社 導電性接着剤、及び電子部品の接続方法
KR101488916B1 (ko) * 2011-12-23 2015-02-02 제일모직 주식회사 이방성 도전 필름 및 반도체 장치
JP2014026963A (ja) * 2012-06-18 2014-02-06 Sekisui Chem Co Ltd 接続構造体の製造方法
JP2014049646A (ja) * 2012-08-31 2014-03-17 Panasonic Corp 部品実装方法および部品実装システム
JP6115060B2 (ja) 2012-09-21 2017-04-19 富士通株式会社 電子デバイスの製造方法
JP6061645B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6068106B2 (ja) * 2012-09-24 2017-01-25 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6061642B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6061643B2 (ja) * 2012-09-24 2017-01-18 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
JP6243111B2 (ja) * 2012-11-14 2017-12-06 日本電産サンキョー株式会社 磁気センサ装置およびその製造方法
JP5887304B2 (ja) * 2013-06-21 2016-03-16 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板
US9997491B2 (en) 2013-07-08 2018-06-12 Sony Corporation Method of determining curing conditions, method of producing circuit device, and circuit device
JP6393039B2 (ja) * 2014-02-12 2018-09-19 デクセリアルズ株式会社 接続体の製造方法、接続方法及び接続体
TWI693267B (zh) * 2014-05-23 2020-05-11 日商迪睿合股份有限公司 接著劑及連接構造體
JP6430148B2 (ja) * 2014-05-23 2018-11-28 デクセリアルズ株式会社 接着剤及び接続構造体
JP6419457B2 (ja) * 2014-05-23 2018-11-07 デクセリアルズ株式会社 接着剤及び接続構造体
KR102334672B1 (ko) * 2014-06-03 2021-12-06 다이요 잉키 세이조 가부시키가이샤 경화성 조성물 및 전자 부품
JP2016035044A (ja) * 2014-06-03 2016-03-17 太陽インキ製造株式会社 導電性接着剤および電子部品
CN105900180B (zh) * 2014-06-05 2018-07-06 积水化学工业株式会社 导电糊剂、连接结构体及连接结构体的制造方法
JP6181038B2 (ja) * 2014-12-26 2017-08-16 株式会社タムラ製作所 異方性導電性ペーストおよびそれを用いたプリント配線基板の製造方法
JP5966102B1 (ja) * 2014-12-26 2016-08-10 積水化学工業株式会社 導電ペースト、接続構造体及び接続構造体の製造方法
JP2016148012A (ja) * 2015-02-05 2016-08-18 太陽インキ製造株式会社 硬化性組成物および電子部品
KR20240018694A (ko) * 2015-03-09 2024-02-13 가부시끼가이샤 레조낙 접속 구조체의 제조 방법
WO2016148004A1 (ja) 2015-03-18 2016-09-22 デクセリアルズ株式会社 発光装置製造方法
JP6493968B2 (ja) * 2015-03-18 2019-04-03 デクセリアルズ株式会社 接続方法、接合体、異方性導電フィルム、及び接合体の前駆体
JP6187918B2 (ja) * 2015-04-23 2017-08-30 パナソニックIpマネジメント株式会社 回路部材の接続構造、接続方法および接続材料
JP6710120B2 (ja) * 2015-09-30 2020-06-17 太陽インキ製造株式会社 導電性接着剤、電子部品および電子部品の製造方法
JP6782413B2 (ja) * 2015-12-18 2020-11-11 昭和電工マテリアルズ株式会社 導電性接着剤組成物、接続構造体及び半導体発光素子搭載フレキシブル配線基板
JP7321979B2 (ja) * 2015-12-18 2023-08-07 株式会社レゾナック 導電性接着剤組成物、接続構造体及び半導体発光素子搭載フレキシブル配線基板
JP6587107B2 (ja) * 2016-05-12 2019-10-09 パナソニックIpマネジメント株式会社 回路部材の接続方法
JP6772012B2 (ja) * 2016-09-28 2020-10-21 株式会社タムラ製作所 異方性導電フィルムの製造方法
JP6474008B2 (ja) * 2017-03-29 2019-02-27 パナソニックIpマネジメント株式会社 接続材料
JP6536968B2 (ja) * 2017-07-20 2019-07-03 パナソニックIpマネジメント株式会社 接続材料
JP6709944B2 (ja) * 2018-10-01 2020-06-17 株式会社弘輝 接合構造体の製造方法
CN112912427B (zh) * 2018-10-24 2023-08-22 住友电木株式会社 导电性树脂组合物和半导体装置
JP6691998B1 (ja) * 2019-12-24 2020-05-13 株式会社鈴木 半導体装置の製造方法及び半導体装置の製造装置
CN111261053B (zh) * 2020-01-20 2023-10-13 京东方科技集团股份有限公司 微型发光二极管显示面板及其制备方法和显示装置
JP7405196B2 (ja) * 2020-07-14 2023-12-26 株式会社レゾナック 導電性接着剤組成物、接続構造体及び半導体発光素子搭載フレキシブル配線基板
KR20240014821A (ko) * 2022-07-26 2024-02-02 에스케이온 주식회사 Pcb와 fpcb가 접합된 도전성 접합부를 포함하는 배터리 모듈 및 그 접합 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101361412A (zh) * 2006-09-15 2009-02-04 松下电器产业株式会社 电子部件安装粘合剂、电子部件安装粘合剂的制作方法、电子部件安装结构及电子部件安装结构的制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3636159B2 (ja) * 1992-09-08 2005-04-06 セイコーエプソン株式会社 液晶表示装置、半導体チップの実装構造、電子光学装置および電子印字装置
JP3417110B2 (ja) 1994-12-30 2003-06-16 カシオ計算機株式会社 電子部品の接続方法
JPH08325543A (ja) * 1995-06-05 1996-12-10 Soken Chem & Eng Co Ltd 異方導電性接着剤
US5965064A (en) * 1997-10-28 1999-10-12 Sony Chemicals Corporation Anisotropically electroconductive adhesive and adhesive film
JP2001015551A (ja) * 1999-06-29 2001-01-19 Toshiba Corp 半導体装置およびその製造方法
JP4411819B2 (ja) * 2000-03-23 2010-02-10 ソニー株式会社 電気的接続材料
JP3966516B2 (ja) 2001-06-20 2007-08-29 東レエンジニアリング株式会社 実装方法および装置
JP2003147287A (ja) * 2001-11-14 2003-05-21 Hitachi Chem Co Ltd 回路接続用接着フィルム
JP3968516B2 (ja) * 2002-09-10 2007-08-29 井関農機株式会社 農作業機
US7034403B2 (en) 2003-04-10 2006-04-25 3M Innovative Properties Company Durable electronic assembly with conductive adhesive
JP4399005B2 (ja) * 2005-02-03 2010-01-13 パナソニック株式会社 フリップチップ実装方法及びバンプ形成方法
US7726545B2 (en) * 2005-03-16 2010-06-01 Panasonic Corporation Flip chip mounting process and bump-forming process using electrically-conductive particles as nuclei
JP4084835B2 (ja) * 2005-03-29 2008-04-30 松下電器産業株式会社 フリップチップ実装方法および基板間接続方法
WO2008065926A1 (fr) * 2006-11-28 2008-06-05 Panasonic Corporation Structure de montage de composant électronique et procédé de fabrication correspondant
TW200839895A (en) * 2007-03-16 2008-10-01 Int Semiconductor Tech Ltd Method for flip-chip bonding with non-conductive paste
JP5093482B2 (ja) * 2007-06-26 2012-12-12 ソニーケミカル&インフォメーションデバイス株式会社 異方性導電材料、接続構造体及びその製造方法
JP2009141269A (ja) * 2007-12-10 2009-06-25 Sony Chemical & Information Device Corp 電気部品の実装方法及び実装装置
CN102204420B (zh) * 2008-11-06 2013-11-13 住友电木株式会社 制造电子器件的方法及电子器件
JPWO2010070779A1 (ja) * 2008-12-19 2012-05-24 パナソニック株式会社 異方性導電樹脂、基板接続構造及び電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101361412A (zh) * 2006-09-15 2009-02-04 松下电器产业株式会社 电子部件安装粘合剂、电子部件安装粘合剂的制作方法、电子部件安装结构及电子部件安装结构的制作方法

Also Published As

Publication number Publication date
HK1178688A1 (zh) 2013-09-13
KR20120136386A (ko) 2012-12-18
JP2010226140A (ja) 2010-10-07
KR101355709B1 (ko) 2014-01-27
TWI480966B (zh) 2015-04-11
US20120255766A1 (en) 2012-10-11
US8835772B2 (en) 2014-09-16
CN102939645A (zh) 2013-02-20
TW201207972A (en) 2012-02-16
JP5540916B2 (ja) 2014-07-02
WO2011158666A1 (ja) 2011-12-22

Similar Documents

Publication Publication Date Title
CN102939645B (zh) 连接结构体的制造方法
KR101242930B1 (ko) 회로접속용 접착 필름 및 회로접속 구조체
KR101098205B1 (ko) 이방성 도전 필름
CN102942881B (zh) 粘接片、使用其的电路构件的连接结构及半导体器件
JP4590732B2 (ja) 回路接続材料及びそれを用いた回路板の製造方法、回路板
TWI468487B (zh) An anisotropic conductive material, a method for manufacturing the same, and a structure thereof and a method for manufacturing the same
CN1505835A (zh) 电气装置制造方法
CN101946371A (zh) 连接膜、以及接合体及其制造方法
KR20070001854A (ko) 회로접속재료
KR102478959B1 (ko) 접착제 조성물 및 접속체
TWI542652B (zh) A circuit connecting material and a connecting method using the same, and a connecting structure
TWI539470B (zh) An anisotropic conductive connecting material, a film laminate, a connecting method, and a connecting structure
KR100714794B1 (ko) 저온 속경화형 이방성 도전 필름, 및 그 제조방법
JP4794704B2 (ja) 回路接続材料、回路端子の接続構造および回路端子の接続方法
JP2012057161A (ja) 回路接続用接着フィルム及び回路接続構造体
JP2010212706A (ja) 回路接続材料及びそれを用いた回路板の製造方法、回路板
CN107922817B (zh) 粘接剂组合物、各向异性导电性粘接剂组合物、电路连接材料及连接体
CN114787307A (zh) 各向异性导电膜
JP2010004067A (ja) 回路接続材料
TW201712094A (zh) 接著劑組成物、異向導電性接著劑組成物、電路連接材料及連接體
TW201700696A (zh) 接著劑組成物及連接體
JP2009182365A (ja) 回路板の製造方法及び回路接続材料

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Tokyo, Japan, Japan

Applicant after: Dexerials Corporation

Address before: Tokyo, Japan, Japan

Applicant before: Sony Chemicals & Information Device Co., Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: + TO: DEXERIALS ELECTRONIC MATERIAL LTD.

REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1178688

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1178688

Country of ref document: HK