TWI537333B - 經由熱壓接合法組裝的微電子封裝物所用之助熔－包封劑材料 - Google Patents

經由熱壓接合法組裝的微電子封裝物所用之助熔－包封劑材料 Download PDF

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TWI537333B
TWI537333B TW101130836A TW101130836A TWI537333B TW I537333 B TWI537333 B TW I537333B TW 101130836 A TW101130836 A TW 101130836A TW 101130836 A TW101130836 A TW 101130836A TW I537333 B TWI537333 B TW I537333B
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fluxing
flux
temperature
substrate
anhydride
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TW101130836A
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TW201329155A (zh
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西發庫馬 那格拉傑
桑迪普 雷登
尼夏 安南薩克里斯曼
克雷格 威曼
開柏庫馬 莫普立
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英特爾股份有限公司
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C08G59/245—Di-epoxy compounds carbocyclic aromatic
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Description

經由熱壓接合法組裝的微電子封裝物所用之助熔一包封劑材料
本發明係關於微電子封裝，且更特別地，助熔-包封劑材料及彼於熱壓接合法中之用途。
朝向提高效能及較高密度電子電路的發展趨勢導向電子封裝物和印刷電路板(PCB)設計中之表面封裝技術之發展。熱壓接合(TCB)在電子封裝工業中被廣為接受用以使用焊料凸塊(其於提高溫度和壓力下重熔(reflow)以形成接點)將頂基板直接接合於底基板上。例如，熱壓接合可用以接合晶粒-晶粒、晶粒-基板載體、晶粒-封裝物和晶粒-晶圓。
熱壓接合的數種實作用於工業中。第一個實作中，於熱壓接合之前或之時，施用助熔材料以使接點上的氧化物還原。熱壓接合之後，施以包封劑以提供接點的機械保護。第一個實作中，在施以包封劑之前，須以去助熔劑法洗除助熔劑殘渣。去助熔劑法期間內，接點未受到保護。會因為與焊料凸塊間距緊密及接點於去助熔劑法期間未受到保護有關之無效率去助熔劑而導致形成空隙和可靠性破壞。
第二個實作限制了接合墊至未經氧化的材料之表面修整。此實作中，可以不使用助熔材料，因而不使用助熔材料地形成接點。可於熱壓接合之時或之後施以包封劑以提 供用於接點的機械保護。會因為與無助熔劑氧化物相關之接合墊上的污染和部分未潤濕而造成接點品質欠佳和形成空隙。
第三個實作中，無流動底部填充法(non-flow underfill process)用於熱壓接合，其中具有自身助熔能力的底部填充物在焊料重熔法期間內固化。但是，目前的無流動底部填充法受到數個失效模式(failure mode)的阻礙。例如，因為無流動底部填充型材料的助熔作用不足，常經歷接合墊和焊料冶金(包括銅、鎳等)的未潤濕。亦因為無流動底部填充型材料的不相容性及無流動底部填充型材料之迅速升溫的TCB熱輪廓的固化動力學而觀察到明顯的空隙化。此空隙亦會導致經固化的底部填料之接點破裂和熱機械保護不足。
參考附圖描述各種具體實施例中助熔-包封劑材料和熱壓接合法。但是，某些具體實施例可以在沒有這些指定細節中的一或多者或與其他已知方法和材料合併的情況下進行。以下的描述中，列出數個指定細節，如指定材料、百分比和方法等，以充分瞭解本發明。其他例子中，未描述習知的封裝法和製造技巧之特別的細節，以免模糊本發明。此說明書中之“具體實施例”或“或一個具體實施例”是指關於具體實施例所述之特別的部件、構造、材料、或特徵含括於本發明的至少一個具體實施例中。因此，此說明 書中各處的“具體實施例中”或“一個具體實施例中”不一定是指本發明之相同的具體實施例。此外，特別的部件、構造、材料或特徵可以任何適當方式合併於一或多個具體實施例中。
根據本發明之具體實施例，所述助熔-包封劑材料可用於迅速升溫熱壓接合(TCB)法、能夠令不同接合墊和焊料冶金(包括，但不限於，銅、鎳、鈷、錫、金等)的氧化物還原、且能夠包封及保護接點使其在組裝期間內無裂縫並確保可靠的應力。
一方面，此助熔-包封劑材料與TCB法相容，可用於晶粒-晶粒、晶粒-基板載體、晶粒-封裝物、晶粒-晶圓和晶圓-晶圓組裝物。此處所謂“基板”為一般詞彙且可含括晶粒、基板載體、封裝物、晶圓等中之任何者。
一方面，在TCB法期間內，此助熔-包封劑材料可還原表面修整氧化物及亦在單一步驟中提供焊料凸塊封裝。
一方面，此助熔-包封劑材料可包括至少一種指定用以還原各種冶金(如，但不限於，銅、鎳、鈷、錫、金等)之氧化物的助熔劑。
一方面，此助熔-包封劑材料能夠流動和充填低於100微米的緊密凸塊距離。
一方面，此助熔-包封劑材料能夠流動和充填低於50微米的緊密凸塊距離。
本發明的一個具體實施例中，助熔-包封劑材料及其 於迅速升溫熱壓接合法(TCB)法之用途。此具體實施例中，此助熔-包封劑材料施於固定在台座的底基板上。令底基板維持於分段溫度(staging temperature)例如180℃。頂基板固定於接合頭，其亦可維持於分段溫度例如100℃。之後，將頂基板置於底基板上。之後，將接合頭溫度以50℃/秒-100℃/秒之陡升速率陡升至高於位於頂或底基板上之焊料凸塊的液體溫度之溫度(例如，250℃-300℃)。之後，令接合頭溫度維持於焊料之液體溫度以上達一段時間，之後將接合頭溫度降低至低於焊料的液體溫度(如180℃)。
一個具體實施例中，此助熔-包封劑材料可包括一或多種具有多個官能基且環氧當量重(EEW)為150-1,000的環氧樹脂、具有官能基(如酐、酸和胺)的固化劑；和酸解離常數(pKa)為4-5的單羧酸或二羧酸助熔劑。此處所用的pKa是指唯一或第一酸解離常數。至於多質子酸，pKa是指第一酸解離常數PK1，而非pK2、pK3等。此助熔-包封劑材料可以另包括具有表面塗層之填料，所具有的表面塗層與環氧樹脂的多重官能基不具反應性。TCB法和封裝要求時，額外添加劑可含括於助熔-包封劑材料中。
一個具體實施例中，將固化動力學低的助熔-包封劑材料用於迅速升溫TCB法以達到減少或無空隙之包封。此具體實施例中，EEW為150-1,000，或更特定為300-1,000，且甚至更特定地介於300和500之間的高分子量環氧化物與固化動力學低的固化劑(如酐，或更特定為環 狀酐，其不會於低於180℃極迅速地反應)合併使得較強或較高濃度的有機助熔劑(如單羧酸和二羧酸)得以摻入助熔-包封劑材料中。以此方式，環氧樹脂可能只須於焊劑之液體以上時間(TAL)終了時固化至足夠程度，以於冷卻期間內保護接點。在TAL期間內的實質上不完全固化提供在TCB期間內產生的揮發物散逸途徑。環氧基可於後續熱處理期間內最終固化。
此助熔-包封劑材料的固化動力$學造成具有高阻抗的此助熔-包封劑材料於分段溫度固化或低於分段溫度固化。於分段溫度(如180℃)，助熔-包封劑材料維持低黏度達一段合理時間(125秒)。溫度高於分段溫度時，助熔-包封劑材料開始迅速固化而使得黏度迅速提高。根據本發明之具體實施例的助熔-包封劑材料的等溫黏度軌跡示於圖1。隨著溫度自分段溫度提高至接合溫度，低黏度區變短且在達到虛線所示的反曲點之後，助熔-包封劑材料開始迅速固化。在到達反曲點之前，在分段和接合溫度期間內，維持較長的低密度期間可以較佳地幫助助熔-包封劑材料之散佈和流動，藉此降低藏納空隙、填料和樹脂的傾向。
因此，根據本發明之具體實施例，可以於迅速升溫TCB法中利用緩慢固化助熔-包封劑材料，其中，形成的揮發物量減少，同時固化動力學緩慢，可使得產生的揮發物散逸，造成空隙最少或無空隙。此外，緩慢固化動力學得以將較強或較高濃度的有機助熔劑(如單羧酸和二羧酸) 摻入助熔-包封劑材料中，以減少或消除非潤濕物的存在。越強或越高濃度的有機助熔劑亦有助於多種表面修整物(包括一般難移除的氧化物，如，但不限於，銅和鎳)之熔化。
參照圖2，出示助熔包封劑材料的構件組合，其中此組合有助於在迅速升溫TCB法期間內的無空隙包封。根據本發明之具體實施例，樹脂構件包括一或多種具有多重官能基且環氧當量重(EEW)為150-1,000的環氧樹脂，以有助於最少或無空隙及通過必須符合如溫度循環的可靠條件。當固化劑被活化時，多重官能基提供多重反應點。例如，環氧樹脂可為二官能性環氧樹脂或三官能性環氧樹脂及彼等之混合物。較高的EEW可減少自環氧樹脂產生的揮發物量。已發現EEW低於約150的樹脂在TCB熱曲線期間內的揮發作用較大，導致空隙。一個具體實施例中，一或多種環氧樹脂構成包封劑-包封劑材料的20重量%-30重量%。某些具體實施例中，環氧樹脂可為雙酚A的二環氧丙醚(DGEBA)，亦稱為BADGE，其具有兩個官能性環氧基。DGEBA具有以下結構：
根據本發明之具體實施例，此固化劑構件包括一或多種具有酐、酸、或胺官能基的固化劑，以有助於在TCB 迅速升溫至峰重熔溫度(peak reflow temperature)的期間內延緩膠凝。若需要高固化速率和較高產量，則酸固化劑可用於助熔-包封劑材料以於活化之後加速固化動力學以在TCB法終了之前達到環氧樹脂的實質上完全固化。若欲達到無空隙或實質上無空隙包封，則固化動力學較緩慢之具有環氧樹脂的固化劑可施於助熔-包封劑材料中。例如，酐和胺固化劑的固化動力學較酸固化劑緩慢。
一個具體實施例中，以緩慢固化調合物達到無空隙包封，其中若助熔-包封劑材料的黏度和固化速率低，則可釋出自助熔-包封劑材料的構件而產生的揮發物和基於助熔反應而產生的揮發物。以此方式，於焊劑液體以上時間(TAL)終了時(如5-60秒，更特定為5-40秒，且又更特定為5-20秒)，此環氧樹脂只須固化至足夠程度，以於冷卻期間內保護接點。在將基板降至低於焊料液體溫度之後，可將助熔-包封劑材料予以最終固化。助熔-包封劑材料膠凝化後的實質上不完全固化可使焊料再熔、助熔-包封劑材料之助熔和初步固化期間內產生的揮發物釋出，此減少空隙形成。
一個具體實施例中，一或多種固化劑可構成包封劑-包封劑材料的2重量%至20重量%。酐的例子包括乙酸酐(醋酸酐)，其熔點為-73℃，沸點為140℃且結構如下： 丙酸酐，其熔點為-45℃，沸點為168℃且結構如下： 丁酸酐，其熔點為-75℃，沸點為200℃且結構如下： 丁二酸酐，其熔點為120℃，沸點為261℃且結構如下： 戊二酸酐，其熔點為57℃且結構如下： 苯甲酸酐，其熔點為42℃，沸點為360℃且結構如下： 和酞酸酐(四氫酞酸酐)，其熔點為132℃，沸點為285℃且結構如下： 一個具體實施例中，適當固化劑可包括，但不限於，環狀酐，如丁二酸酐、苯甲酸酐和酞酸酐及彼等之氫化變體，如四氫酞酸酐和六氫酞酸酐。
根據本發明之具體實施例，助熔劑構件包括一或多種助熔劑以使存在於接合墊和焊料上之金屬表面修整物的氧化物還原。加至助熔-包封劑材料之助熔劑的類型和濃度可決定指定表面修整物之助熔-包封劑材料的氧化物移除力。因此，以適當的助熔作用，可消除接點之非潤濕物形成。一個具體實施例中，一或多種助熔劑可構成包封劑-包封劑材料的5重量%-30重量%。
可使用助熔劑，如有機羧酸、路易士酸、脂肪酸和松香。特別重要地，當以特別的助熔劑之氧化物移除力選擇助熔劑時，由於存在於助熔劑中的官能基亦能引發交聯反應、衝擊膠凝作用及影響樹脂的固化動力學，所以特別的助熔劑亦具有作為用於特別的樹脂之固化劑的潛能。據此，本發明的某些具體實施例中，小心地調整助熔劑與環氧樹脂的交互作用。一個具體實施例中，助熔劑與環氧樹 脂的反應性可藉迅速升溫速率及助熔劑的延緩活性調整。一個具體實施例中，助熔劑對於待移除的氧化物具有活性，同時與環氧樹脂實質上不具反應性。一個具體實施例中，助熔劑的反應副產物不會與固化的環氧網絡相分離。一些具體實施例中，任何助熔反應和所得的反應副產物發生於助熔-包封劑材料自250℃升溫至300℃之前。一些具體實施例中，與助熔劑的揮發作用相關之任何分解亦發生於助熔包封劑升溫至250℃之前。
根據本發明之具體實施例，助熔-包封劑材料能夠自銅接合墊移除厚度為50奈米-125奈米的氧化銅層。在條狀TCB應用中，通常為，例如，60-70個基板，置於底台座上，其於提高的分段溫度(如180℃)一小時或更久。已觀察到，此期間內，待接合之長條中的最後一個基板相較於待接合之長條中的第一個基板，可累積更多氧化物生成於其金屬表面修整物上。根據本發明之具體實施例，助熔劑可有效地自銅接合墊移除50奈米-125奈米厚度。一個特別的具體實施例中，一或更多種助熔劑可包括酸解離常數(pKa)為4-5的單羧酸或二羧酸或彼等之混合物，以移除已形成的氧化銅層。一個具體實施例中，此一或多種單羧酸和/或二羧酸可構成包封劑-包封劑材料的5重量-30重量%。
某些具體實施例中，助熔劑可包括，但不限於，丁二酸(pK1=4.207)、己二酸(pK1=4.418)、庚二酸(pK1=4.484)、辛二酸(pK1=4.512)、壬二酸(pK1=4.53)、癸二 酸(pK1=4.59)、苯甲二酸(pK1=4.204)、和彼等之混合物。
根據本發明之具體實施例，此填料構件包括一或多種所具表面塗層對於環氧樹脂不具反應性的填料以防止環氧樹脂的過早膠凝化和固化。欲儘量減少填料藏納於TCB法形成的接點中，可控制填料的各方面，如平均粒子尺寸、最大粒子尺寸、分佈、和表面塗覆。某些具體實施例中，所有的填料可包括非反應性塗層，僅一部分的填料包括非反應性塗層，或非反應性塗層之組合可形成填料上。填料可為適用以降低熱膨脹係數(CTE)和彈性強化模數的任何材料，如矽石。一個具體實施例中，此填料可構成包封劑-包封劑材料的60重量%-70重量%。此高重量%有利於降低經固化的包封劑之熱膨脹係數(CTE)和彈性強化模數。一個具體實施例中，此填料的粒子尺寸低於1微米至30微米。一個具體實施例中，此填料的最大粒子尺寸低於5微米以儘量減低或消除填料藏納於接點中。某些具體實施例中，此填料可包含具有非反應性塗層的矽石粒子，其構成包封劑-包封劑材料的60重量%-70重量%，最大粒子尺寸低於5微米。非反應性塗層的例子可包括具有與環氧環不具反應性之官能基的矽烷偶合劑。
根據本發明之具體實施例，TCB法和封裝需求所要時，助熔-包封劑材料可另包括額外添加劑構件以修飾包封劑的物理、機械、黏著性。這些添加劑可包括，但不限於，黏度修飾劑、偶合劑、黏著促進劑、韌化劑等。一個 具體實施例中，一或多種添加劑可構成包封劑-包封劑材料的1重量%-5重量%。
現參照圖3A-3D和圖4，說明根據本發明之具體實施例之熱壓接合法。如所示者，助熔-包封劑材料120施於固定於台座100的一或多個底基板110上。底基板110(如晶粒、有機基板、封裝物、晶圓等)可於真空下固定於台座100。具有固定之頂基板210的接合頭200以接合力(如2牛頓或更高)將頂基板210置於底基板110上。根據本發明之具體實施例，頂和底基板可包括金屬接合墊112、212。焊料凸塊214可附於頂和底基板之一或二者之接合墊112、212。此焊料可為任何類型的焊料，如錫-鉛、以銦為基礎者、錫-銅、錫-銅-鎳等。接合墊可由材料(如鋁、銅等)所構成。
在使用真空噴嘴提取頂基板210之前或之後，接合頭200可經預熱以提高分段溫度(如100℃)，此溫度低於焊料214的液體溫度(Tliq)。一個具體實施例中，接合頭200於提高的分段溫度空轉並在提取頂基板210及將頂基板210置於底基板110上時，維持於此提高的分段溫度。此外，在將頂基板210置於底基板110上之前，台座100可預熱至提高的分段溫度，此溫度低於焊料214的液體溫度(Tliq)。某些具體實施例中，台座100預熱至提高的分段溫度約180℃。在將基板預熱之前或在剛要將頂基板置於底基板上之前，可以將助熔-包封劑材料120施於底基板110上，此取決於助熔包封劑材料的固化行為。一個具 體實施例中，在台座預熱至分段溫度之前，此助熔-包封劑材料120施於在台座100上的多個基板110上。
將頂基板210置於底基板110上之後，令接合頭200的溫度以75℃/秒-100℃/秒的迅速陡升速率自分段溫度陡升至高於焊料214的液體溫度(Tliq)。令接合頭溫度維持於焊料214的液體以上時間(TAL)一段時間，之後在釋出第二基板210之前將接合頭溫度降至低於焊料214的液體溫度。在釋放第二基板210之後，重覆此方法，接合頭200用以將其他頂基板置於固定於台座100的長條中的底基板上。一旦所有的封裝物經組裝，它們可自台座100移開用於離線固化或以提高的溫度維持於台座上以線上方式達到助熔-包封劑材料的100%固化。
現參照圖5，說明根據本發明之具體實施例的熱壓接合法，其中描述助熔-包封劑材料的構件之特定的熱交互作用。如所示者，助熔-包封劑材料施於固定在台座的一或多個底基板上，例如在真空下。此台座維持於提高的分段溫度(如100℃-180℃)，此溫度低於底基板或固定在接合頭的頂基板上之焊料凸塊的液體溫度(Tliq)。在提取頂基板之前或之後，此接合頭亦可預熱至提高的分段溫度(如100℃-180℃)，此溫度低於焊料的液體溫度(Tliq)。頂基板置於底基板上，之後，接合頭溫度以50℃/秒-100℃/秒之陡升速率自分段溫度陡升至如250℃-300℃，此溫度高於焊料的Tliq，使得助熔劑於預熱溫度(如100-180℃)和焊料的Tliq之間被活化。
之後令接合頭溫度維持於如250℃-300℃，此溫度高於焊料214的液體溫度達最短時間(如5-60秒，更特定為5-40秒，或甚至更特定為5-20秒)以使得環氧樹脂部分固化並抑制焊料中的介金屬形成。特別的重點在於，根據本發明之具體實施例，在焊料之液體以上時間(TAL)內，助熔-包封劑材料不須完全固化。特定具體實施例中，於接合頭溫度高於焊料液體溫度一段期間終了時，高至40%-70%環氧樹脂被固化。
之後，在釋放頂基板之前，接合頭溫度降至如100℃-180℃，此溫度低於焊料的液體溫度。釋放頂基板之後，重覆此方法，接合頭將另一頂基板置於固定於台座的長條中之底基板上。一旦組裝所有的封裝物，它們自台座移除以離線固化或以提高溫度以線上模式維持於台座上以達到助熔-包封劑材料的100%固化。
下列實例用以提供特定構件中之相互關係及助熔-包封劑材料摻入迅速升溫TCB法的能力之更充分瞭解及說明。下列實例用於說明，且不欲限制本發明之範圍。
實例1
0.05-2.0克四氫酞酸酐固化劑加至10克具有高環氧基單量重(EEW)為300-500的DGEBA多官能性環氧基中且此混合物於50℃攪拌約2小時直到固化劑均勻溶解。 之後將此混合物冷卻至30℃。
0.025-1.0克單羧酸和二羧酸助熔劑之混合物加入之前的混合物中並於50℃攪拌30分鐘。將此製得的調合物稱為基礎或未經充填的調合物。
之後添加60-70重量%矽石填料。此矽石填料的表面塗層包括具有與環氧樹脂的環氧環不具反應性的官能基之矽烷偶合劑。使用玻璃棒使矽石填料和基礎調合物預先混合。之後，此混合物六度通過三壓輥研磨機以使矽石粒子良好地分散於此基礎調合物中。矽石填料的平均粒子尺寸為0.6微米而矽石粒子的最大尺寸為5微米。
滾磨之後，助熔-包封劑材料在真空爐中脫氣1小時並於之後在冷凍機中儲於-40℃。任何評估之前，助熔-包封劑材料解凍至室溫至少1小時。
之後藉TCB法，將此助熔-包封劑材料用以將晶粒接合至封裝物。接點之間的緊密間距約40微米且晶粒和封裝物之間的縫隙(晶圓縫隙)小為25微米。
TCB法中，助熔-包封劑材料施於維持於真空下、溫度為180℃的底封裝物中。之後，底封裝物於180℃預烤一小時，以在底封裝物的銅接合墊上形成氧化銅層，以模擬在條狀TCB法期間內會發生的氧化物形成。加熱至分段溫度100℃-180℃的接合頭在真空下提取晶粒。此晶粒含括銅-錫焊料凸塊。接合頭將晶粒置於封裝物上，銅-錫焊料凸塊對準封裝物上的銅接合墊。之後，此接合頭以50℃/秒-100℃/秒之陡升速率自分段溫度升溫至250℃- 300℃。之後使此接合頭於介於250℃-300℃之間的等溫安定5-40秒。之後，此接合頭迅速地分二階段冷卻。第一階段中，接合頭冷卻至150℃-180℃並維持於等溫達20-60分鐘以固化環氧基，第二階段為冷卻至室溫。
圖6A係實例1之TCB組裝的封裝物之接點深度的超音波掃描顯微法(SAM)俯視圖。如所示者，未觀察到顯著的空隙。圖6B係實例1之TCB組裝的封裝物之接點和包封劑的側視圖。圖6B顯示助熔-包封劑材料對於銅修整物之良好的助熔作用，沒有非潤濕物存在且沒有任何塊狀空隙。咸信此係藉由使用高分子量環氧化物所致並顯示助熔-包封劑材料的固化動力學得以摻入較強/較高濃度的有機助熔酸(單羧酸和二羧酸)。此外，圖6B顯示良好接點形成且未藏納填料。
實例2
藉由與實例1相同的TCB法，助熔-包封劑材料用以將晶粒接合至封裝物。助熔-包封劑材料係與實例1中所述相同的材料，但所用環氧基的EEW較低，其低於150。
圖7係實例2之TCB組裝的封裝物之接點深度的超音波掃描顯微法(SAM)俯視圖。如所示者，固化的包封劑中發現顯著的空隙。咸信自低EEW環氧樹脂製造的揮發物導致明顯空隙。
實例3
藉由與實例1相同的TCB法，助熔-包封劑材料用以將晶粒接合至封裝物。助熔-包封劑材料係與實例1中所述相同的材料，但使用迅速固化單官能性芳族羧酸固化劑代替四氫酞酸酐固化劑。
圖8係實例3之TCB組裝的封裝物之接點深度的超音波掃描顯微法(SAM)俯視圖。如所示者，固化的包封劑中發現輕微塊狀空隙。相較於實例1中的四氫酞酸酐固化劑，咸信所觀察到的空隙源自於實例3中的固化劑之迅速固化動力學。
實例4
藉由與實例1相同的TCB法，助熔-包封劑材料用以將晶粒接合至封裝物。助熔-包封劑材料係與實例1中所述相同的材料，但使用極低濃度的弱有機酸助熔劑代替單羧酸和二羧酸助熔劑之混合物。
圖9係實例4之TCB組裝的封裝物之接點和封裝劑的側視圖。如所示者，銅-錫焊料和銅接合墊之間觀察到明顯的未潤濕物。咸信此因實例4中的助熔-包封劑材料之不足/微弱的助熔作用所致。
實例5-6
在經充填的包封劑材料存在時，在TCB法期間內，藏納填料也是主要的問題。極端的情況中，藏納填料合併 迅速膠凝/固化包封系統會導致未著陸(non-touchdown)的問題。根據本發明之具體實施例，藉由打造填料尺寸和表面塗覆化學以減少填料塗層與環氧基/固化劑系統的交互作用，可儘量減少或消除藏納填料的情況。
實例5中，藉由與實例1相同的TCB法，助熔-包封劑材料用以將晶粒接合至封裝物。助熔-包封劑材料係與實例1中所述相同的材料，但使用具有固有表面羥基(其與環氧樹脂具反應性)之未經塗覆的填料。圖10係實例5之TCB組裝的封裝物之接點和包封劑的側視圖。如所示者，源自於填料與環氧基/固化劑之反應之極端的填料藏納造成過早膠凝。
實例6中，藉由與實例1相同的TCB法，助熔-包封劑材料用以將晶粒接合至封裝物。助熔-包封劑材料係與實例1中所述相同的材料，但使用具有較大粒子尺寸(約24微米)的填料。圖11係實例6之TCB組裝的封裝物之接點和包封劑的側視圖。如所示者，大尺寸填料粒子藏納於接點中，導致空隙/塊破裂。
回到圖6B，實例1的非反應性填料表面塗層展現良好的接合形成且未藏納填料。此外，由於視接點尺寸而定地打造填料尺寸而防止藏納填料。
實例7-8
除了填料尺寸/分佈和表面塗覆化學以外，凸塊的形狀亦影響TCB法期間內的藏納情況。半圓/圓頂形表面 有助於在頂晶粒至底凸塊(或反之)的TCB著陸期間內推出填料，而扁平/凹形凸塊基本上展現較高的藏納情況。
圖12係底部下凹的凸塊所形成之接點的側視圖。圖13係接點的側視圖，顯示因為底部凸塊為半圓形，所以未藏納填料。
圖14出示根據本發明之具體實施例的電腦系統。一些具體實施例中，系統300包括處理器310、記憶體裝置320、記憶控制器330、繪圖控制器340、輸入和輸出(I/O)控制器350、顯示器352、鍵盤354、指向裝置356和週邊裝置358，彼等可經由匯流排360彼此連接。處理器310可為通用處理器或應用指定的積體電路(ASIC)。I/O控制器350可包括用於有線或無線傳訊的傳訊模組。記憶體裝置320可為動態隨機存取記憶體(DRAM)裝置、靜態隨機存取記憶體(SRAM)裝置、快閃記憶體裝置、或這些記憶體裝置之組合。因此，一些具體實施例中，系統300中的記憶體裝置320不一定得包括DRAM裝置。
系統300中所示的一或多個組件可包括於和/或可包括一或多個封裝物，例如圖3D之熱壓接合的封裝結構。例如，處理器300、或記憶體裝置320、或I/O控制器350的至少一部分、或這些組件之組合可包括於封裝物中，此包括各種具體實施例中所述之構造的至少一個具體實施例。
這些元件發揮彼等於技術中習知的慣常作用。特別地，記憶體裝置320可用於一些情況中以長期儲存用以形 成根據本發明之具體實施例之封裝結構的方法之可執行的指令，在其他具體實施例中，可用以在藉處理器310執行的期間內，較短時間地儲存用以形成根據本發明之具體實施例之封裝結構的方法之可執行的指令。此外，指令可經儲存，或以機械可存取介質傳訊的方式連接系統，例如，光碟唯讀記憶體(CD-ROM)、多樣化數位光碟(DVD)、和軟碟、載波、和/或其他傳播訊號。一個具體實施例中，記憶體裝置320可供應處理器310用於執行之可執行的指令。
系統300可包括電腦(如桌上型、膝上型、手提型、伺服器、網路應用、路由器等)、無線通訊裝置(如行動電話、無線電話、傳呼機、個人數位助理等)、電腦相關的週邊(如印表機、掃描機、顯示器等)、娛樂裝置(如電視、收音機、立體音響、磁帶和光碟播放器、錄影機、視訊卡帶記錄器、數位相機、MP3(動畫專家群組，音訊層3)播放器、電視遊樂器、錶等)等。
雖然已針對構造特徵和/或方法作用描述本發明，應瞭解所附申請專利範圍界定之發明不必限於所述的指定特徵或作用。應瞭解所揭示的指定特徵和作用為申請的發明之特別合宜的實作，其可用以說明本發明。
100‧‧‧台座
110‧‧‧底基板
112‧‧‧接合墊
120‧‧‧助熔-包封劑材料
200‧‧‧接合頭
210‧‧‧頂基板
212‧‧‧金屬接合墊
214‧‧‧焊料凸塊
300‧‧‧系統
310‧‧‧處理器
320‧‧‧記憶體裝置
330‧‧‧記憶體控制器
340‧‧‧繪圖控制器
350‧‧‧輸入和輸出(I/O)控制器
352‧‧‧顯示器
354‧‧‧鍵盤
356‧‧‧指向裝置
358‧‧‧週邊裝置
360‧‧‧匯流排
圖1係在根據本發明之具體實施例的熱壓接合法中，助熔-包封劑材料於介於分段和接合步驟之間之各種溫度 的等溫黏度圖。
圖2說明在根據本發明之具體實施例中，助熔-包封劑材料中的構件。
圖3A-3D為根據本發明之具體實施例的熱壓接合法的側視圖。
圖4說明根據本發明之具體實施例的熱壓接合法。
圖5說明根據本發明之具體實施例的熱壓接合法。
圖6A係根據本發明之具體實施例之TCB組裝的封裝物至接點深度的超音波掃描顯微法(SAM)俯視圖。
圖6B係根據本發明之具體實施例之TCB組裝的封裝物之接點和包封劑的側視圖。
圖7-8係根據本發明之具體實施例之TCB組裝的封裝物至接點深度的超音波掃描顯微法(SAM)俯視圖。
圖9-13係根據本發明之具體實施例之TCB組裝的封裝物之接點和包封劑的側視圖。
圖14代表根據本發明之具體實施例的系統。

Claims (19)

  1. 一種熱壓接合方法，包含：將助熔-包封劑材料施於固定在台座的底基板上，其中該助熔-包封劑材料包含：一或多種具有多個官能基且環氧當量重(EEW)為150-1,000的環氧樹脂；具有選自酐、酸和胺之官能基的固化劑；和具有單羧酸或二羧酸且pKa為4-5的助熔劑；以接合力將頂基板置於底基板上，使頂基板固定於接合頭；將接合頭溫度以50℃/秒-100℃/秒之陡升速率陡升至250℃-300℃；令接合頭溫度維持介於250℃-300℃之間；和令接合頭溫度降至180℃或更低。
  2. 如申請專利範圍第1項之方法，其中該助熔-包封劑材料維持在介於250℃-300℃之接合頭溫度後，實質上不完全固化。
  3. 如申請專利範圍第1項之方法，其中一或多種環氧樹脂包含二官能性環氧樹脂和三官能性環氧樹脂之混合物。
  4. 如申請專利範圍第1項之方法，其另包含令一或多種環氧樹脂實質上完全固化而形成固化的環氧基網絡，其中助熔劑的反應產物未與固化的環氧基網絡相分離。
  5. 如申請專利範圍第1項之方法，其另包含： 在頂或底基板上形成氧化銅，同時在將頂基板置於底基板上之前，使頂或底基板溫度維持於180℃或更低達最多1小時，其中助熔劑能夠令形成於頂或底基板上的氧化銅還原。
  6. 如申請專利範圍第1項之方法，其中固化劑的實質部分與一或多種環氧樹脂於介於250℃-300℃之間反應。
  7. 如申請專利範圍第1項之方法，其中接合頭溫度維持高於在頂或底基板上之焊料凸塊的液體溫度達40秒或更短時間。
  8. 如申請專利範圍第1項之方法，其中將頂基板置於底基板上包含將焊料凸塊置於銅墊上。
  9. 如申請專利範圍第1項之方法，其另包含當接合頭溫度以50℃/秒-100℃/秒之陡升速率陡升至250℃-300℃時，助熔來自銅墊的氧化物層。
  10. 如申請專利範圍第1項之方法，其另包含：將助熔-包封劑材料施於固定在台座的底基板上；於使用包含下列者的方法時，將頂基板熱壓接合於每一個別底基板上：將頂基板置於底基板上，使頂基板固定於接合頭；令接合頭溫度以50℃/秒-100℃/秒之陡升速率陡升至250-300℃； 令接合頭溫度維持於250℃-300℃之間；和令接合頭溫度降至180℃或更低。
  11. 一種熱壓接合方法，包含：將助熔-包封劑材料施於固定在台座的底基板上，其中助熔-包封劑材料包含：一或多種具有多個官能基且環氧當量重(EEW)為150-1,000的環氧樹脂；具有選自酐、酸和胺之官能基的固化劑；和具有單羧酸或二羧酸且pKa為4-5的助熔劑；令台座溫度維持於100℃-180℃的範圍內；令接合頭溫度維持介於100℃-180℃的範圍內；以接合力將底頂基板置於底基板上，使頂基板固定於接合頭；令接合頭溫度以50℃/秒-100℃/秒之陡升速率自100℃-180℃陡升至250℃-300℃的範圍內；令接合頭溫度維持於250℃-300℃之間達5-60秒；和令接合頭溫度降至180℃或更低。
  12. 如申請專利範圍第11項之方法，其中在接合頭溫度維持於250℃-300℃達5-60秒之後，令助熔-包封劑材料之40%-70%經固化。
  13. 一種用於熱壓接合方法之助熔-包封劑材料之製造方法，包含：組合包含下列的助熔-包封劑材料構成份：一或多種具有多個官能基且環氧當量重(EEW)為300- 1,000的環氧樹脂；具有選自酐、酸和胺之官能基的固化劑；和具有單羧酸或二羧酸且pKa為4-5的助熔劑。
  14. 如申請專利範圍第13項之方法，其中該助熔-包封劑材料另包含60-70重量%具有與該一或多種環氧樹脂的多重官能基不具反應性之表面塗層的填料。
  15. 如申請專利範圍第13項之方法，其中該一或多種環氧樹脂係二官能性環氧樹脂或三官能性環氧樹脂。
  16. 如申請專利範圍第13項之方法，其中該一或多種環氧樹脂包含二官能性環氧樹脂和三官能性環氧樹脂之混合物。
  17. 如申請專利範圍第13項之方法，其中該固化劑係環狀酸酐。
  18. 如申請專利範圍第17項之方法，其中該環狀酸酐選自丁二酸酐、苯甲酸酐和酞酸酐、及彼等之氫化變體。
  19. 如申請專利範圍第14項之方法，其中該一或多種環氧樹脂包含二官能性環氧樹脂或三官能性環氧樹脂；該環狀酸酐選自丁二酸酐、苯甲酸酐和酞酸酐；和該填料的最大粒子尺寸低於5微米。
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