SG162772A1 - Display device and sputtering target for producing the same - Google Patents
Display device and sputtering target for producing the sameInfo
- Publication number
- SG162772A1 SG162772A1 SG201004073-1A SG2010040731A SG162772A1 SG 162772 A1 SG162772 A1 SG 162772A1 SG 2010040731 A SG2010040731 A SG 2010040731A SG 162772 A1 SG162772 A1 SG 162772A1
- Authority
- SG
- Singapore
- Prior art keywords
- display device
- producing
- same
- sputtering target
- group
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title 1
- 229910000838 Al alloy Inorganic materials 0.000 abstract 4
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052691 Erbium Inorganic materials 0.000 abstract 1
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 229910052765 Lutetium Inorganic materials 0.000 abstract 1
- 229910052777 Praseodymium Inorganic materials 0.000 abstract 1
- 229910052772 Samarium Inorganic materials 0.000 abstract 1
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- 229910052775 Thulium Inorganic materials 0.000 abstract 1
- 229910052769 Ytterbium Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D17/00—Excavations; Bordering of excavations; Making embankments
- E02D17/20—Securing of slopes or inclines
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01C—PLANTING; SOWING; FERTILISING
- A01C1/00—Apparatus, or methods of use thereof, for testing or treating seed, roots, or the like, prior to sowing or planting
- A01C1/04—Arranging seed on carriers, e.g. on tapes, on cords ; Carrier compositions
- A01C1/044—Sheets, multiple sheets or mats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mining & Mineral Resources (AREA)
- General Engineering & Computer Science (AREA)
- Paleontology (AREA)
- Civil Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Structural Engineering (AREA)
- Soil Sciences (AREA)
- Environmental Sciences (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Conductive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005040787 | 2005-02-17 | ||
| JP2005344679A JP4117001B2 (ja) | 2005-02-17 | 2005-11-29 | 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG162772A1 true SG162772A1 (en) | 2010-07-29 |
Family
ID=36814990
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG201004073-1A SG162772A1 (en) | 2005-02-17 | 2006-02-16 | Display device and sputtering target for producing the same |
| SG200601044A SG125216A1 (en) | 2005-02-17 | 2006-02-16 | Display device and sputtering target for producingthe same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200601044A SG125216A1 (en) | 2005-02-17 | 2006-02-16 | Display device and sputtering target for producingthe same |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7622809B2 (enExample) |
| JP (1) | JP4117001B2 (enExample) |
| KR (2) | KR20060092145A (enExample) |
| SG (2) | SG162772A1 (enExample) |
| TW (1) | TWI300624B (enExample) |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4330517B2 (ja) * | 2004-11-02 | 2009-09-16 | 株式会社神戸製鋼所 | Cu合金薄膜およびCu合金スパッタリングターゲット並びにフラットパネルディスプレイ |
| JP4117001B2 (ja) | 2005-02-17 | 2008-07-09 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット |
| KR100796592B1 (ko) * | 2005-08-26 | 2008-01-21 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
| US7781767B2 (en) | 2006-05-31 | 2010-08-24 | Kobe Steel, Ltd. | Thin film transistor substrate and display device |
| JP2008098611A (ja) * | 2006-09-15 | 2008-04-24 | Kobe Steel Ltd | 表示装置 |
| JP4280277B2 (ja) * | 2006-09-28 | 2009-06-17 | 株式会社神戸製鋼所 | 表示デバイスの製法 |
| CN101523612B (zh) | 2006-10-13 | 2011-07-06 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
| JP5060904B2 (ja) * | 2006-10-13 | 2012-10-31 | 株式会社神戸製鋼所 | 反射電極および表示デバイス |
| CN101506954A (zh) * | 2006-10-16 | 2009-08-12 | 三井金属鉱业株式会社 | 配线用层叠膜及配线电路 |
| JP2008127623A (ja) * | 2006-11-20 | 2008-06-05 | Kobelco Kaken:Kk | Al基合金スパッタリングターゲットおよびその製造方法 |
| JP4377906B2 (ja) * | 2006-11-20 | 2009-12-02 | 株式会社コベルコ科研 | Al−Ni−La系Al基合金スパッタリングターゲット、およびその製造方法 |
| JP4170367B2 (ja) | 2006-11-30 | 2008-10-22 | 株式会社神戸製鋼所 | 表示デバイス用Al合金膜、表示デバイス、及びスパッタリングターゲット |
| JP4355743B2 (ja) * | 2006-12-04 | 2009-11-04 | 株式会社神戸製鋼所 | Cu合金配線膜とそのCu合金配線膜を用いたフラットパネルディスプレイ用TFT素子、及びそのCu合金配線膜を作製するためのCu合金スパッタリングターゲット |
| JP4705062B2 (ja) * | 2007-03-01 | 2011-06-22 | 株式会社神戸製鋼所 | 配線構造およびその作製方法 |
| JP4656441B2 (ja) * | 2007-03-29 | 2011-03-23 | 株式会社日本製鋼所 | 薄膜の結晶化方法および結晶化装置 |
| JP2008304830A (ja) * | 2007-06-11 | 2008-12-18 | Kobe Steel Ltd | 表示デバイスの製造方法 |
| JP2009004518A (ja) * | 2007-06-20 | 2009-01-08 | Kobe Steel Ltd | 薄膜トランジスタ基板、および表示デバイス |
| US20090001373A1 (en) * | 2007-06-26 | 2009-01-01 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) | Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit |
| JP2009008770A (ja) | 2007-06-26 | 2009-01-15 | Kobe Steel Ltd | 積層構造およびその製造方法 |
| JP2009010052A (ja) * | 2007-06-26 | 2009-01-15 | Kobe Steel Ltd | 表示装置の製造方法 |
| JP2009010053A (ja) * | 2007-06-26 | 2009-01-15 | Kobe Steel Ltd | 表示装置およびスパッタリングターゲット |
| JP5143649B2 (ja) * | 2007-07-24 | 2013-02-13 | 株式会社コベルコ科研 | Al−Ni−La−Si系Al合金スパッタリングターゲットおよびその製造方法 |
| JP4611417B2 (ja) * | 2007-12-26 | 2011-01-12 | 株式会社神戸製鋼所 | 反射電極、表示デバイス、および表示デバイスの製造方法 |
| JP4469913B2 (ja) | 2008-01-16 | 2010-06-02 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板および表示デバイス |
| CN101911232B (zh) * | 2008-02-22 | 2014-03-12 | 株式会社神户制钢所 | 触摸屏传感器 |
| KR100927585B1 (ko) * | 2008-03-05 | 2009-11-23 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| JP5139134B2 (ja) | 2008-03-31 | 2013-02-06 | 株式会社コベルコ科研 | Al−Ni−La−Cu系Al基合金スパッタリングターゲットおよびその製造方法 |
| JP5432550B2 (ja) * | 2008-03-31 | 2014-03-05 | 株式会社コベルコ科研 | Al基合金スパッタリングターゲットおよびその製造方法 |
| KR101023597B1 (ko) * | 2008-03-31 | 2011-03-21 | 가부시키가이샤 고베 세이코쇼 | Al기 합금 스퍼터링 타겟 및 그 제조 방법 |
| TWI434421B (zh) * | 2008-03-31 | 2014-04-11 | Kobe Steel Ltd | A display device, a manufacturing method thereof, and a sputtering target |
| JP2009282504A (ja) * | 2008-03-31 | 2009-12-03 | Kobe Steel Ltd | 表示デバイス |
| JP5475260B2 (ja) * | 2008-04-18 | 2014-04-16 | 株式会社神戸製鋼所 | 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置 |
| WO2009131169A1 (ja) * | 2008-04-23 | 2009-10-29 | 株式会社神戸製鋼所 | 表示装置用Al合金膜、表示装置およびスパッタリングターゲット |
| JP2009282514A (ja) * | 2008-04-24 | 2009-12-03 | Kobe Steel Ltd | 表示装置用Al合金膜、表示装置およびスパッタリングターゲット |
| TWI525773B (zh) * | 2008-07-03 | 2016-03-11 | 神戶製鋼所股份有限公司 | Wiring structure, thin film transistor substrate, manufacturing method thereof, and display device |
| JP4684367B2 (ja) * | 2008-07-07 | 2011-05-18 | 三井金属鉱業株式会社 | Al−Ni系合金配線電極材料 |
| JP2010065317A (ja) * | 2008-08-14 | 2010-03-25 | Kobe Steel Ltd | 表示装置およびこれに用いるCu合金膜 |
| JP5012984B2 (ja) * | 2008-09-22 | 2012-08-29 | Tdk株式会社 | 光メディアの反射層用スパッタリングターゲット、及び、その製造方法 |
| JP4678062B2 (ja) | 2008-09-22 | 2011-04-27 | Tdk株式会社 | 光メディア、およびその製造方法 |
| JP5357515B2 (ja) * | 2008-11-05 | 2013-12-04 | 株式会社神戸製鋼所 | 表示装置用Al合金膜、表示装置およびスパッタリングターゲット |
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| JP5368806B2 (ja) * | 2009-01-13 | 2013-12-18 | 株式会社神戸製鋼所 | 表示装置用Al合金膜および表示装置 |
| JP2010134458A (ja) * | 2008-11-05 | 2010-06-17 | Kobe Steel Ltd | 表示装置用Al合金膜、表示装置およびスパッタリングターゲット |
| KR100986897B1 (ko) * | 2008-11-10 | 2010-10-08 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 및 그를 구비하는 평판 표시 장치 |
| JP4567091B1 (ja) | 2009-01-16 | 2010-10-20 | 株式会社神戸製鋼所 | 表示装置用Cu合金膜および表示装置 |
| JP2010181839A (ja) * | 2009-02-09 | 2010-08-19 | Kobe Steel Ltd | 表示デバイスの製造方法 |
| TWI383232B (zh) | 2009-03-19 | 2013-01-21 | Au Optronics Corp | 薄膜電晶體陣列基板 |
| US20100244032A1 (en) * | 2009-03-31 | 2010-09-30 | Samsung Electronics Co., Ltd. | Aluminum-nickel alloy wiring material, device for a thin film transistor and a thin film transistor substrate using the same, and method of manufacturing the thin film transistor substrate |
| JP4735734B2 (ja) * | 2009-04-02 | 2011-07-27 | Tdk株式会社 | 光メディア用スパッタリングターゲット、その製造方法、ならびに、光メディア、およびその製造方法 |
| WO2010150446A1 (ja) * | 2009-06-24 | 2010-12-29 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、アクティブマトリクス基板、表示パネル、ならびに表示装置 |
| US20120119207A1 (en) * | 2009-07-27 | 2012-05-17 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Interconnection structure and method for manufacturing the same, and display device including interconnection structure |
| CN103972246B (zh) | 2009-07-27 | 2017-05-31 | 株式会社神户制钢所 | 布线结构以及具备布线结构的显示装置 |
| WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5223840B2 (ja) * | 2009-10-19 | 2013-06-26 | 三菱マテリアル株式会社 | 光記録媒体用アルミニウム合金反射膜およびこの反射膜を形成するためのスパッタリングターゲット |
| US8404500B2 (en) | 2009-11-02 | 2013-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance |
| JP5235011B2 (ja) * | 2009-11-16 | 2013-07-10 | 株式会社神戸製鋼所 | 有機elディスプレイ用の反射アノード電極 |
| JP5179604B2 (ja) * | 2010-02-16 | 2013-04-10 | 株式会社神戸製鋼所 | 表示装置用Al合金膜 |
| JP2011222567A (ja) | 2010-04-02 | 2011-11-04 | Kobe Steel Ltd | 配線構造、表示装置、および半導体装置 |
| JP2012027159A (ja) | 2010-07-21 | 2012-02-09 | Kobe Steel Ltd | 表示装置 |
| JP2012180540A (ja) | 2011-02-28 | 2012-09-20 | Kobe Steel Ltd | 表示装置および半導体装置用Al合金膜 |
| JP5524905B2 (ja) * | 2011-05-17 | 2014-06-18 | 株式会社神戸製鋼所 | パワー半導体素子用Al合金膜 |
| JP2013084907A (ja) | 2011-09-28 | 2013-05-09 | Kobe Steel Ltd | 表示装置用配線構造 |
| KR20160067958A (ko) | 2013-11-12 | 2016-06-14 | 가부시키가이샤 고베 세이코쇼 | 전극 및 그 제조 방법 |
| US20160345425A1 (en) * | 2014-02-07 | 2016-11-24 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Wiring film for flat panel display |
| CN105304643A (zh) * | 2015-09-28 | 2016-02-03 | 深圳市华星光电技术有限公司 | 一种tft阵列基板及其制作方法 |
| US9916986B2 (en) * | 2016-06-27 | 2018-03-13 | International Business Machines Corporation | Single or mutli block mask management for spacer height and defect reduction for BEOL |
| JP2018032601A (ja) * | 2016-08-26 | 2018-03-01 | 株式会社神戸製鋼所 | 反射電極およびAl合金スパッタリングターゲット |
| US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
| JP6325641B1 (ja) * | 2016-11-30 | 2018-05-16 | 株式会社コベルコ科研 | アルミニウム合金スパッタリングターゲット |
| US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
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-
2005
- 2005-11-29 JP JP2005344679A patent/JP4117001B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-08 US US11/349,520 patent/US7622809B2/en not_active Expired - Fee Related
- 2006-02-13 TW TW095104763A patent/TWI300624B/zh not_active IP Right Cessation
- 2006-02-16 SG SG201004073-1A patent/SG162772A1/en unknown
- 2006-02-16 KR KR1020060015284A patent/KR20060092145A/ko not_active Ceased
- 2006-02-16 SG SG200601044A patent/SG125216A1/en unknown
-
2008
- 2008-08-29 KR KR1020080085114A patent/KR20080084790A/ko not_active Ceased
-
2009
- 2009-01-07 US US12/349,562 patent/US8088259B2/en not_active Expired - Fee Related
-
2011
- 2011-11-01 US US13/286,284 patent/US8350303B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200703657A (en) | 2007-01-16 |
| JP4117001B2 (ja) | 2008-07-09 |
| SG125216A1 (en) | 2006-09-29 |
| US8088259B2 (en) | 2012-01-03 |
| US8350303B2 (en) | 2013-01-08 |
| KR20080084790A (ko) | 2008-09-19 |
| US20120091591A1 (en) | 2012-04-19 |
| JP2006261636A (ja) | 2006-09-28 |
| US20060181198A1 (en) | 2006-08-17 |
| US20090176113A1 (en) | 2009-07-09 |
| US7622809B2 (en) | 2009-11-24 |
| TWI300624B (en) | 2008-09-01 |
| KR20060092145A (ko) | 2006-08-22 |
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