US4524587A
(en)
|
1967-01-10 |
1985-06-25 |
Kantor Frederick W |
Rotary thermodynamic apparatus and method
|
JPS4820850B1
(zh)
*
|
1970-11-21 |
1973-06-25 |
|
|
JPS634616A
(ja)
|
1986-06-25 |
1988-01-09 |
Hitachi Tokyo Electron Co Ltd |
蒸気処理装置
|
JPH0748489B2
(ja)
|
1987-07-27 |
1995-05-24 |
富士通株式会社 |
プラズマ処理装置
|
US4879259A
(en)
|
1987-09-28 |
1989-11-07 |
The Board Of Trustees Of The Leland Stanford Junion University |
Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
|
US5092728A
(en)
*
|
1987-10-15 |
1992-03-03 |
Epsilon Technology, Inc. |
Substrate loading apparatus for a CVD process
|
US5114513A
(en)
|
1988-10-27 |
1992-05-19 |
Omron Tateisi Electronics Co. |
Optical device and manufacturing method thereof
|
JP2730695B2
(ja)
|
1989-04-10 |
1998-03-25 |
忠弘 大見 |
タングステン膜の成膜装置
|
US5126117A
(en)
|
1990-05-22 |
1992-06-30 |
Custom Engineered Materials, Inc. |
Device for preventing accidental releases of hazardous gases
|
US5175123A
(en)
|
1990-11-13 |
1992-12-29 |
Motorola, Inc. |
High-pressure polysilicon encapsulated localized oxidation of silicon
|
US5050540A
(en)
|
1991-01-29 |
1991-09-24 |
Arne Lindberg |
Method of gas blanketing a boiler
|
JPH05129296A
(ja)
|
1991-11-05 |
1993-05-25 |
Fujitsu Ltd |
導電膜の平坦化方法
|
JP3230836B2
(ja)
*
|
1992-04-09 |
2001-11-19 |
東京エレクトロン株式会社 |
熱処理装置
|
US5319212A
(en)
|
1992-10-07 |
1994-06-07 |
Genus, Inc. |
Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
|
JPH06283496A
(ja)
|
1993-03-26 |
1994-10-07 |
Dainippon Screen Mfg Co Ltd |
洗浄処理後の基板の乾燥処理装置
|
US5607002A
(en)
|
1993-04-28 |
1997-03-04 |
Advanced Delivery & Chemical Systems, Inc. |
Chemical refill system for high purity chemicals
|
US5578132A
(en)
|
1993-07-07 |
1996-11-26 |
Tokyo Electron Kabushiki Kaisha |
Apparatus for heat treating semiconductors at normal pressure and low pressure
|
US5880041A
(en)
|
1994-05-27 |
1999-03-09 |
Motorola Inc. |
Method for forming a dielectric layer using high pressure
|
US5808245A
(en)
|
1995-01-03 |
1998-09-15 |
Donaldson Company, Inc. |
Vertical mount catalytic converter muffler
|
US5620524A
(en)
|
1995-02-27 |
1997-04-15 |
Fan; Chiko |
Apparatus for fluid delivery in chemical vapor deposition systems
|
US5858051A
(en)
|
1995-05-08 |
1999-01-12 |
Toshiba Machine Co., Ltd. |
Method of manufacturing optical waveguide
|
JP2872637B2
(ja)
|
1995-07-10 |
1999-03-17 |
アプライド マテリアルズ インコーポレイテッド |
マイクロ波プラズマベースアプリケータ
|
US5895274A
(en)
|
1996-01-22 |
1999-04-20 |
Micron Technology, Inc. |
High-pressure anneal process for integrated circuits
|
KR980012044A
(ko)
|
1996-03-01 |
1998-04-30 |
히가시 데츠로 |
기판건조장치 및 기판건조방법
|
US5998305A
(en)
|
1996-03-29 |
1999-12-07 |
Praxair Technology, Inc. |
Removal of carbon from substrate surfaces
|
US5738915A
(en)
|
1996-09-19 |
1998-04-14 |
Lambda Technologies, Inc. |
Curing polymer layers on semiconductor substrates using variable frequency microwave energy
|
US6444037B1
(en)
|
1996-11-13 |
2002-09-03 |
Applied Materials, Inc. |
Chamber liner for high temperature processing chamber
|
US6082950A
(en)
|
1996-11-18 |
2000-07-04 |
Applied Materials, Inc. |
Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding
|
US5730885A
(en)
*
|
1996-12-03 |
1998-03-24 |
Union Carbide Chemicals & Plastics Technology Corporation |
Screen packs for reducing gels in polypropylene copolymers
|
US5846073A
(en)
*
|
1997-03-07 |
1998-12-08 |
Semitool, Inc. |
Semiconductor furnace processing vessel base
|
US6136664A
(en)
|
1997-08-07 |
2000-10-24 |
International Business Machines Corporation |
Filling of high aspect ratio trench isolation
|
US6352593B1
(en)
*
|
1997-08-11 |
2002-03-05 |
Torrex Equipment Corp. |
Mini-batch process chamber
|
US20030049372A1
(en)
|
1997-08-11 |
2003-03-13 |
Cook Robert C. |
High rate deposition at low pressures in a small batch reactor
|
US5963817A
(en)
|
1997-10-16 |
1999-10-05 |
International Business Machines Corporation |
Bulk and strained silicon on insulator using local selective oxidation
|
JP3199006B2
(ja)
|
1997-11-18 |
2001-08-13 |
日本電気株式会社 |
層間絶縁膜の形成方法および絶縁膜形成装置
|
US6442980B2
(en)
|
1997-11-26 |
2002-09-03 |
Chart Inc. |
Carbon dioxide dry cleaning system
|
US6846739B1
(en)
|
1998-02-27 |
2005-01-25 |
Micron Technology, Inc. |
MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
|
US6164412A
(en)
|
1998-04-03 |
2000-12-26 |
Arvin Industries, Inc. |
Muffler
|
US6719516B2
(en)
|
1998-09-28 |
2004-04-13 |
Applied Materials, Inc. |
Single wafer load lock with internal wafer transport
|
US20030101938A1
(en)
|
1998-10-27 |
2003-06-05 |
Applied Materials, Inc. |
Apparatus for the deposition of high dielectric constant films
|
TW517092B
(en)
*
|
1999-03-17 |
2003-01-11 |
Kobe Steel Ltd |
High-temperature and high-pressure treatment device
|
US6468490B1
(en)
|
2000-06-29 |
2002-10-22 |
Applied Materials, Inc. |
Abatement of fluorine gas from effluent
|
US6612317B2
(en)
|
2000-04-18 |
2003-09-02 |
S.C. Fluids, Inc |
Supercritical fluid delivery and recovery system for semiconductor wafer processing
|
US6334266B1
(en)
|
1999-09-20 |
2002-01-01 |
S.C. Fluids, Inc. |
Supercritical fluid drying system and method of use
|
ATE418158T1
(de)
|
1999-08-17 |
2009-01-15 |
Applied Materials Inc |
Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung
|
US6299753B1
(en)
|
1999-09-01 |
2001-10-09 |
Applied Materials, Inc. |
Double pressure vessel chemical dispenser unit
|
JP2001110729A
(ja)
|
1999-10-06 |
2001-04-20 |
Mitsubishi Heavy Ind Ltd |
半導体素子の連続製造装置
|
US20030148631A1
(en)
|
1999-11-08 |
2003-08-07 |
Taiwan Semiconductor Manufacturing Company |
Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile
|
US6500603B1
(en)
|
1999-11-11 |
2002-12-31 |
Mitsui Chemicals, Inc. |
Method for manufacturing polymer optical waveguide
|
US6150286A
(en)
|
2000-01-03 |
2000-11-21 |
Advanced Micro Devices, Inc. |
Method of making an ultra thin silicon nitride film
|
US6541367B1
(en)
|
2000-01-18 |
2003-04-01 |
Applied Materials, Inc. |
Very low dielectric constant plasma-enhanced CVD films
|
US6319766B1
(en)
|
2000-02-22 |
2001-11-20 |
Applied Materials, Inc. |
Method of tantalum nitride deposition by tantalum oxide densification
|
JP2001250787A
(ja)
|
2000-03-06 |
2001-09-14 |
Hitachi Kokusai Electric Inc |
基板処理装置および基板処理方法
|
US20040025908A1
(en)
|
2000-04-18 |
2004-02-12 |
Stephen Douglas |
Supercritical fluid delivery system for semiconductor wafer processing
|
JP3497450B2
(ja)
*
|
2000-07-06 |
2004-02-16 |
東京エレクトロン株式会社 |
バッチ式熱処理装置及びその制御方法
|
US7166524B2
(en)
|
2000-08-11 |
2007-01-23 |
Applied Materials, Inc. |
Method for ion implanting insulator material to reduce dielectric constant
|
JP4342745B2
(ja)
*
|
2000-09-27 |
2009-10-14 |
株式会社日立国際電気 |
基板処理方法および半導体装置の製造方法
|
US6852167B2
(en)
|
2001-03-01 |
2005-02-08 |
Micron Technology, Inc. |
Methods, systems, and apparatus for uniform chemical-vapor depositions
|
JP4335469B2
(ja)
|
2001-03-22 |
2009-09-30 |
株式会社荏原製作所 |
真空排気装置のガス循環量調整方法及び装置
|
US6797336B2
(en)
|
2001-03-22 |
2004-09-28 |
Ambp Tech Corporation |
Multi-component substances and processes for preparation thereof
|
JP4015818B2
(ja)
|
2001-03-28 |
2007-11-28 |
株式会社日立国際電気 |
半導体製造装置
|
TW544797B
(en)
|
2001-04-17 |
2003-08-01 |
Kobe Steel Ltd |
High-pressure processing apparatus
|
JP2002319571A
(ja)
|
2001-04-20 |
2002-10-31 |
Kawasaki Microelectronics Kk |
エッチング槽の前処理方法及び半導体装置の製造方法
|
US7080651B2
(en)
|
2001-05-17 |
2006-07-25 |
Dainippon Screen Mfg. Co., Ltd. |
High pressure processing apparatus and method
|
EP1271636A1
(en)
|
2001-06-22 |
2003-01-02 |
Infineon Technologies AG |
Thermal oxidation process control by controlling oxidation agent partial pressure
|
JP2003051474A
(ja)
|
2001-08-03 |
2003-02-21 |
Kobe Steel Ltd |
高圧処理装置
|
US6781801B2
(en)
|
2001-08-10 |
2004-08-24 |
Seagate Technology Llc |
Tunneling magnetoresistive sensor with spin polarized current injection
|
US6531412B2
(en)
|
2001-08-10 |
2003-03-11 |
International Business Machines Corporation |
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
|
US6619304B2
(en)
|
2001-09-13 |
2003-09-16 |
Micell Technologies, Inc. |
Pressure chamber assembly including non-mechanical drive means
|
US20030098069A1
(en)
|
2001-11-26 |
2003-05-29 |
Sund Wesley E. |
High purity fluid delivery system
|
KR100450564B1
(ko)
|
2001-12-20 |
2004-09-30 |
동부전자 주식회사 |
반도체 소자의 금속 배선 후처리 방법
|
US6848458B1
(en)
|
2002-02-05 |
2005-02-01 |
Novellus Systems, Inc. |
Apparatus and methods for processing semiconductor substrates using supercritical fluids
|
US6632325B2
(en)
|
2002-02-07 |
2003-10-14 |
Applied Materials, Inc. |
Article for use in a semiconductor processing chamber and method of fabricating same
|
US7589029B2
(en)
|
2002-05-02 |
2009-09-15 |
Micron Technology, Inc. |
Atomic layer deposition and conversion
|
US7638727B2
(en)
|
2002-05-08 |
2009-12-29 |
Btu International Inc. |
Plasma-assisted heat treatment
|
US7521089B2
(en)
|
2002-06-13 |
2009-04-21 |
Tokyo Electron Limited |
Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
|
US20070243317A1
(en)
|
2002-07-15 |
2007-10-18 |
Du Bois Dale R |
Thermal Processing System and Configurable Vertical Chamber
|
AU2003256487A1
(en)
*
|
2002-07-15 |
2004-02-02 |
Aviza Technology, Inc. |
Variable heater element for low to high temperature ranges
|
US7335609B2
(en)
|
2004-08-27 |
2008-02-26 |
Applied Materials, Inc. |
Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
|
US20070212850A1
(en)
|
2002-09-19 |
2007-09-13 |
Applied Materials, Inc. |
Gap-fill depositions in the formation of silicon containing dielectric materials
|
JP2004127958A
(ja)
|
2002-09-30 |
2004-04-22 |
Kyoshin Engineering:Kk |
高圧アニール水蒸気処理を行なう装置及び方法
|
US20040060519A1
(en)
|
2002-10-01 |
2004-04-01 |
Seh America Inc. |
Quartz to quartz seal using expanded PTFE gasket material
|
US6889508B2
(en)
|
2002-10-02 |
2005-05-10 |
The Boc Group, Inc. |
High pressure CO2 purification and supply system
|
US7270761B2
(en)
|
2002-10-18 |
2007-09-18 |
Appleid Materials, Inc |
Fluorine free integrated process for etching aluminum including chamber dry clean
|
US20040112409A1
(en)
|
2002-12-16 |
2004-06-17 |
Supercritical Sysems, Inc. |
Fluoride in supercritical fluid for photoresist and residue removal
|
CN1757098B
(zh)
|
2003-02-04 |
2010-08-11 |
应用材料有限公司 |
利用具有氨的超低压快速热退火调节氧氮化硅的氮分布曲线
|
JPWO2004075272A1
(ja)
*
|
2003-02-21 |
2006-06-01 |
株式会社日立国際電気 |
基板処理装置及び半導体デバイスの製造方法
|
JP3956049B2
(ja)
|
2003-03-07 |
2007-08-08 |
東京エレクトロン株式会社 |
タングステン膜の形成方法
|
US6939794B2
(en)
|
2003-06-17 |
2005-09-06 |
Micron Technology, Inc. |
Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
|
WO2005007283A2
(en)
|
2003-07-08 |
2005-01-27 |
Sundew Technologies, Llc |
Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
|
JP4173781B2
(ja)
|
2003-08-13 |
2008-10-29 |
株式会社神戸製鋼所 |
高圧処理方法
|
WO2005057663A2
(en)
|
2003-12-10 |
2005-06-23 |
Koninklijke Philips Electronics N.V. |
Method and apparatus for fabrication of metal-oxide semiconductor integrated circuit devices
|
US7158221B2
(en)
|
2003-12-23 |
2007-01-02 |
Applied Materials, Inc. |
Method and apparatus for performing limited area spectral analysis
|
US20050136684A1
(en)
|
2003-12-23 |
2005-06-23 |
Applied Materials, Inc. |
Gap-fill techniques
|
US20050250347A1
(en)
|
2003-12-31 |
2005-11-10 |
Bailey Christopher M |
Method and apparatus for maintaining by-product volatility in deposition process
|
US7030468B2
(en)
|
2004-01-16 |
2006-04-18 |
International Business Machines Corporation |
Low k and ultra low k SiCOH dielectric films and methods to form the same
|
US7128570B2
(en)
*
|
2004-01-21 |
2006-10-31 |
Asm International N.V. |
Method and apparatus for purging seals in a thermal reactor
|
US20050187647A1
(en)
|
2004-02-19 |
2005-08-25 |
Kuo-Hua Wang |
Intelligent full automation controlled flow for a semiconductor furnace tool
|
JP4393268B2
(ja)
|
2004-05-20 |
2010-01-06 |
株式会社神戸製鋼所 |
微細構造体の乾燥方法
|
US20050269291A1
(en)
|
2004-06-04 |
2005-12-08 |
Tokyo Electron Limited |
Method of operating a processing system for treating a substrate
|
US7521378B2
(en)
|
2004-07-01 |
2009-04-21 |
Micron Technology, Inc. |
Low temperature process for polysilazane oxidation/densification
|
US7491658B2
(en)
|
2004-10-13 |
2009-02-17 |
International Business Machines Corporation |
Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
|
US7427571B2
(en)
|
2004-10-15 |
2008-09-23 |
Asm International, N.V. |
Reactor design for reduced particulate generation
|
CN101061253B
(zh)
|
2004-11-22 |
2010-12-22 |
应用材料股份有限公司 |
使用批式制程腔室的基材处理装置
|
KR100697280B1
(ko)
|
2005-02-07 |
2007-03-20 |
삼성전자주식회사 |
반도체 제조 설비의 압력 조절 방법
|
JP4475136B2
(ja)
*
|
2005-02-18 |
2010-06-09 |
東京エレクトロン株式会社 |
処理システム、前処理装置及び記憶媒体
|
JP5531284B2
(ja)
|
2005-02-22 |
2014-06-25 |
エスピーティーエス テクノロジーズ リミテッド |
副チャンバアセンブリを備えるエッチング用チャンバ
|
US7211525B1
(en)
|
2005-03-16 |
2007-05-01 |
Novellus Systems, Inc. |
Hydrogen treatment enhanced gap fill
|
WO2006101315A1
(en)
|
2005-03-21 |
2006-09-28 |
Pkl Co., Ltd. |
Device and method for cleaning photomask
|
US20060226117A1
(en)
|
2005-03-29 |
2006-10-12 |
Bertram Ronald T |
Phase change based heating element system and method
|
US7351057B2
(en)
*
|
2005-04-27 |
2008-04-01 |
Asm International N.V. |
Door plate for furnace
|
US20120060868A1
(en)
|
2005-06-07 |
2012-03-15 |
Donald Gray |
Microscale fluid delivery system
|
ATE419560T1
(de)
|
2005-06-10 |
2009-01-15 |
Obducat Ab |
Kopieren eines musters mit hilfe eines zwischenstempels
|
JP4747693B2
(ja)
|
2005-06-28 |
2011-08-17 |
住友電気工業株式会社 |
樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法
|
US7361231B2
(en)
|
2005-07-01 |
2008-04-22 |
Ekc Technology, Inc. |
System and method for mid-pressure dense phase gas and ultrasonic cleaning
|
JP5117856B2
(ja)
|
2005-08-05 |
2013-01-16 |
株式会社日立国際電気 |
基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
|
US7534080B2
(en)
|
2005-08-26 |
2009-05-19 |
Ascentool, Inc. |
Vacuum processing and transfer system
|
US7531404B2
(en)
|
2005-08-30 |
2009-05-12 |
Intel Corporation |
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
|
KR100696178B1
(ko)
|
2005-09-13 |
2007-03-20 |
한국전자통신연구원 |
광 도파로 마스터 및 그 제조 방법
|
US8926731B2
(en)
|
2005-09-13 |
2015-01-06 |
Rasirc |
Methods and devices for producing high purity steam
|
US20080257260A9
(en)
*
|
2005-09-30 |
2008-10-23 |
Applied Materials, Inc. |
Batch wafer handling system
|
WO2007043383A1
(ja)
|
2005-10-07 |
2007-04-19 |
Nikon Corporation |
微小構造体およびその製造方法
|
US7387968B2
(en)
|
2005-11-08 |
2008-06-17 |
Tokyo Electron Limited |
Batch photoresist dry strip and ash system and process
|
US8306026B2
(en)
|
2005-12-15 |
2012-11-06 |
Toshiba America Research, Inc. |
Last hop topology sensitive multicasting key management
|
US20070187386A1
(en)
|
2006-02-10 |
2007-08-16 |
Poongsan Microtec Corporation |
Methods and apparatuses for high pressure gas annealing
|
US7578258B2
(en)
|
2006-03-03 |
2009-08-25 |
Lam Research Corporation |
Methods and apparatus for selective pre-coating of a plasma processing chamber
|
JP2007242791A
(ja)
|
2006-03-07 |
2007-09-20 |
Hitachi Kokusai Electric Inc |
基板処理装置
|
WO2007133595A2
(en)
|
2006-05-08 |
2007-11-22 |
The Board Of Trustees Of The University Of Illinois |
Integrated vacuum absorption steam cycle gas separation
|
US7825038B2
(en)
|
2006-05-30 |
2010-11-02 |
Applied Materials, Inc. |
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
|
US7650965B2
(en)
|
2006-06-09 |
2010-01-26 |
Emcon Technologies Llc |
Exhaust system
|
US7371998B2
(en)
*
|
2006-07-05 |
2008-05-13 |
Semitool, Inc. |
Thermal wafer processor
|
JP2008073611A
(ja)
|
2006-09-21 |
2008-04-03 |
Dainippon Screen Mfg Co Ltd |
高圧処理装置
|
JP4814038B2
(ja)
|
2006-09-25 |
2011-11-09 |
株式会社日立国際電気 |
基板処理装置および反応容器の着脱方法
|
US7790587B2
(en)
|
2006-11-07 |
2010-09-07 |
Intel Corporation |
Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
|
US20080169183A1
(en)
|
2007-01-16 |
2008-07-17 |
Varian Semiconductor Equipment Associates, Inc. |
Plasma Source with Liner for Reducing Metal Contamination
|
JP2008192642A
(ja)
|
2007-01-31 |
2008-08-21 |
Tokyo Electron Ltd |
基板処理装置
|
US20080233404A1
(en)
|
2007-03-22 |
2008-09-25 |
3M Innovative Properties Company |
Microreplication tools and patterns using laser induced thermal embossing
|
JP5135856B2
(ja)
|
2007-03-31 |
2013-02-06 |
東京エレクトロン株式会社 |
トラップ装置、排気系及びこれを用いた処理システム
|
DE102007017641A1
(de)
|
2007-04-13 |
2008-10-16 |
Infineon Technologies Ag |
Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder
|
JP2010528475A
(ja)
|
2007-05-25 |
2010-08-19 |
アプライド マテリアルズ インコーポレイテッド |
電子デバイス製造システムを組み立てる及び運転する方法及び装置
|
WO2008156687A1
(en)
|
2007-06-15 |
2008-12-24 |
Applied Materials, Inc. |
Methods and systems for designing and validating operation of abatement systems
|
US20090004405A1
(en)
*
|
2007-06-29 |
2009-01-01 |
Applied Materials, Inc. |
Thermal Batch Reactor with Removable Susceptors
|
KR101442238B1
(ko)
|
2007-07-26 |
2014-09-23 |
주식회사 풍산마이크로텍 |
고압 산소 열처리를 통한 반도체 소자의 제조방법
|
JP4470970B2
(ja)
*
|
2007-07-31 |
2010-06-02 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
US7951728B2
(en)
|
2007-09-24 |
2011-05-31 |
Applied Materials, Inc. |
Method of improving oxide growth rate of selective oxidation processes
|
US7541297B2
(en)
|
2007-10-22 |
2009-06-02 |
Applied Materials, Inc. |
Method and system for improving dielectric film quality for void free gap fill
|
US7867923B2
(en)
|
2007-10-22 |
2011-01-11 |
Applied Materials, Inc. |
High quality silicon oxide films by remote plasma CVD from disilane precursors
|
US7803722B2
(en)
|
2007-10-22 |
2010-09-28 |
Applied Materials, Inc |
Methods for forming a dielectric layer within trenches
|
KR20100084676A
(ko)
|
2007-10-26 |
2010-07-27 |
어플라이드 머티어리얼스, 인코포레이티드 |
향상된 연료 회로를 사용하는 스마트 저감을 위한 방법 및 장치
|
JP5299605B2
(ja)
|
2007-11-19 |
2013-09-25 |
日揮触媒化成株式会社 |
低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜
|
US7651959B2
(en)
|
2007-12-03 |
2010-01-26 |
Asm Japan K.K. |
Method for forming silazane-based dielectric film
|
KR20090064279A
(ko)
|
2007-12-14 |
2009-06-18 |
노벨러스 시스템즈, 인코포레이티드 |
손상 없는 갭 충진을 위한 보호 층
|
US7776740B2
(en)
|
2008-01-22 |
2010-08-17 |
Tokyo Electron Limited |
Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
|
JP4815464B2
(ja)
|
2008-03-31 |
2011-11-16 |
株式会社日立製作所 |
微細構造転写スタンパ及び微細構造転写装置
|
US7655532B1
(en)
|
2008-07-25 |
2010-02-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
STI film property using SOD post-treatment
|
JP2010056541A
(ja)
|
2008-07-31 |
2010-03-11 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
US20100089315A1
(en)
|
2008-09-22 |
2010-04-15 |
Applied Materials, Inc. |
Shutter disk for physical vapor deposition chamber
|
US8153533B2
(en)
|
2008-09-24 |
2012-04-10 |
Lam Research |
Methods and systems for preventing feature collapse during microelectronic topography fabrication
|
KR20100035000A
(ko)
|
2008-09-25 |
2010-04-02 |
삼성전자주식회사 |
서로 다른 종횡비를 갖는 소자 분리 트렌치 갭필 방법 및 그를 이용한 반도체 소자
|
US7891228B2
(en)
|
2008-11-18 |
2011-02-22 |
Mks Instruments, Inc. |
Dual-mode mass flow verification and mass flow delivery system and method
|
US8557712B1
(en)
|
2008-12-15 |
2013-10-15 |
Novellus Systems, Inc. |
PECVD flowable dielectric gap fill
|
JP2010205854A
(ja)
|
2009-03-02 |
2010-09-16 |
Fujitsu Semiconductor Ltd |
半導体装置の製造方法
|
US20100304027A1
(en)
|
2009-05-27 |
2010-12-02 |
Applied Materials, Inc. |
Substrate processing system and methods thereof
|
JP4415062B1
(ja)
|
2009-06-22 |
2010-02-17 |
富士フイルム株式会社 |
薄膜トランジスタ及び薄膜トランジスタの製造方法
|
KR20110000960A
(ko)
|
2009-06-29 |
2011-01-06 |
삼성전자주식회사 |
반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법
|
US8741788B2
(en)
|
2009-08-06 |
2014-06-03 |
Applied Materials, Inc. |
Formation of silicon oxide using non-carbon flowable CVD processes
|
JP2011066100A
(ja)
|
2009-09-16 |
2011-03-31 |
Bridgestone Corp |
光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法
|
US8449942B2
(en)
|
2009-11-12 |
2013-05-28 |
Applied Materials, Inc. |
Methods of curing non-carbon flowable CVD films
|
KR101995704B1
(ko)
|
2009-11-20 |
2019-07-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
US20110151677A1
(en)
|
2009-12-21 |
2011-06-23 |
Applied Materials, Inc. |
Wet oxidation process performed on a dielectric material formed from a flowable cvd process
|
US8647992B2
(en)
|
2010-01-06 |
2014-02-11 |
Applied Materials, Inc. |
Flowable dielectric using oxide liner
|
JP2013516788A
(ja)
|
2010-01-07 |
2013-05-13 |
アプライド マテリアルズ インコーポレイテッド |
ラジカル成分cvd用のインサイチュオゾン硬化
|
US9500362B2
(en)
|
2010-01-21 |
2016-11-22 |
Powerdyne, Inc. |
Generating steam from carbonaceous material
|
US8293658B2
(en)
|
2010-02-17 |
2012-10-23 |
Asm America, Inc. |
Reactive site deactivation against vapor deposition
|
JP2013521650A
(ja)
|
2010-03-05 |
2013-06-10 |
アプライド マテリアルズ インコーポレイテッド |
ラジカル成分cvdによる共形層
|
KR101163711B1
(ko)
|
2010-06-15 |
2012-07-09 |
서울대학교산학협력단 |
함몰된 바디에 두개의 게이트를 갖는 1t 디램 소자와 그 동작방법 및 제조방법
|
CN101871043B
(zh)
|
2010-06-25 |
2012-07-18 |
东莞市康汇聚线材科技有限公司 |
一种退火炉蒸汽发生器及其控制方法
|
US8318584B2
(en)
|
2010-07-30 |
2012-11-27 |
Applied Materials, Inc. |
Oxide-rich liner layer for flowable CVD gapfill
|
JP2012049446A
(ja)
|
2010-08-30 |
2012-03-08 |
Toshiba Corp |
超臨界乾燥方法及び超臨界乾燥システム
|
EP2426720A1
(en)
|
2010-09-03 |
2012-03-07 |
Applied Materials, Inc. |
Staggered thin film transistor and method of forming the same
|
TW201216331A
(en)
|
2010-10-05 |
2012-04-16 |
Applied Materials Inc |
Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
|
JP5806827B2
(ja)
*
|
2011-03-18 |
2015-11-10 |
東京エレクトロン株式会社 |
ゲートバルブ装置及び基板処理装置並びにその基板処理方法
|
JP5450494B2
(ja)
|
2011-03-25 |
2014-03-26 |
株式会社東芝 |
半導体基板の超臨界乾燥方法
|
US9031373B2
(en)
|
2011-03-25 |
2015-05-12 |
Seo Young Lee |
Lightwave circuit and method for manufacturing same
|
WO2012133583A1
(ja)
|
2011-03-30 |
2012-10-04 |
大日本印刷株式会社 |
超臨界乾燥装置及び超臨界乾燥方法
|
US20120252210A1
(en)
|
2011-03-30 |
2012-10-04 |
Tokyo Electron Limited |
Method for modifying metal cap layers in semiconductor devices
|
US9299581B2
(en)
|
2011-05-12 |
2016-03-29 |
Applied Materials, Inc. |
Methods of dry stripping boron-carbon films
|
WO2012165377A1
(ja)
|
2011-05-30 |
2012-12-06 |
東京エレクトロン株式会社 |
基板処理方法、基板処理装置および記憶媒体
|
JP6085423B2
(ja)
|
2011-05-30 |
2017-02-22 |
株式会社東芝 |
基板処理方法、基板処理装置および記憶媒体
|
US8466073B2
(en)
|
2011-06-03 |
2013-06-18 |
Applied Materials, Inc. |
Capping layer for reduced outgassing
|
GB201110117D0
(en)
|
2011-06-16 |
2011-07-27 |
Fujifilm Mfg Europe Bv |
method and device for manufacturing a barrie layer on a flexible substrate
|
CN103620758B
(zh)
|
2011-06-28 |
2017-02-15 |
动力微系统公司 |
半导体储料器系统和方法
|
JPWO2013065771A1
(ja)
|
2011-11-01 |
2015-04-02 |
株式会社日立国際電気 |
半導体装置の製造方法、半導体装置の製造装置及び記録媒体
|
JP5712902B2
(ja)
|
2011-11-10 |
2015-05-07 |
東京エレクトロン株式会社 |
基板処理装置、基板処理方法及び記憶媒体
|
JP2013122493A
(ja)
|
2011-12-09 |
2013-06-20 |
Furukawa Electric Co Ltd:The |
光分岐素子および光分岐回路
|
JP2013154315A
(ja)
|
2012-01-31 |
2013-08-15 |
Ricoh Co Ltd |
薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置
|
WO2013122874A1
(en)
|
2012-02-13 |
2013-08-22 |
Applied Materials, Inc. |
Methods and apparatus for selective oxidation of a substrate
|
US8871656B2
(en)
|
2012-03-05 |
2014-10-28 |
Applied Materials, Inc. |
Flowable films using alternative silicon precursors
|
US20130288485A1
(en)
|
2012-04-30 |
2013-10-31 |
Applied Materials, Inc. |
Densification for flowable films
|
US20130337171A1
(en)
|
2012-06-13 |
2013-12-19 |
Qualcomm Mems Technologies, Inc. |
N2 purged o-ring for chamber in chamber ald system
|
KR101224520B1
(ko)
*
|
2012-06-27 |
2013-01-22 |
(주)이노시티 |
프로세스 챔버
|
KR20140003776A
(ko)
|
2012-06-28 |
2014-01-10 |
주식회사 메카로닉스 |
고 저항 산화아연 박막의 제조방법
|
WO2014011954A1
(en)
|
2012-07-13 |
2014-01-16 |
Northwestern University |
Multifunctional graphene coated scanning tips
|
JP2014019912A
(ja)
|
2012-07-19 |
2014-02-03 |
Tokyo Electron Ltd |
タングステン膜の成膜方法
|
US8846448B2
(en)
|
2012-08-10 |
2014-09-30 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Warpage control in a package-on-package structure
|
KR101680152B1
(ko)
|
2012-08-24 |
2016-11-28 |
고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 |
게르마늄 층 상에 질화 산화 알루미늄 막을 구비하는 반도체 구조 및 그 제조방법
|
KR102002782B1
(ko)
|
2012-09-10 |
2019-07-23 |
삼성전자주식회사 |
팽창성 부재를 사용하는 반도체 장치의 제조 방법
|
JP2014060256A
(ja)
|
2012-09-18 |
2014-04-03 |
Tokyo Electron Ltd |
処理システム
|
US9157730B2
(en)
|
2012-10-26 |
2015-10-13 |
Applied Materials, Inc. |
PECVD process
|
SG2013083241A
(en)
|
2012-11-08 |
2014-06-27 |
Novellus Systems Inc |
Conformal film deposition for gapfill
|
US20150322286A1
(en)
|
2012-11-27 |
2015-11-12 |
The Regents Of The University Of California |
Polymerized Metal-Organic Material for Printable Photonic Devices
|
JP2014141739A
(ja)
|
2012-12-27 |
2014-08-07 |
Tokyo Electron Ltd |
金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
|
US20140216498A1
(en)
|
2013-02-06 |
2014-08-07 |
Kwangduk Douglas Lee |
Methods of dry stripping boron-carbon films
|
SG11201505371UA
(en)
|
2013-02-19 |
2015-09-29 |
Applied Materials Inc |
Hdd patterning using flowable cvd film
|
KR101443792B1
(ko)
|
2013-02-20 |
2014-09-26 |
국제엘렉트릭코리아 주식회사 |
건식 기상 식각 장치
|
KR20140106977A
(ko)
|
2013-02-27 |
2014-09-04 |
삼성전자주식회사 |
고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법
|
US9354508B2
(en)
|
2013-03-12 |
2016-05-31 |
Applied Materials, Inc. |
Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
|
US9680095B2
(en)
|
2013-03-13 |
2017-06-13 |
Macronix International Co., Ltd. |
Resistive RAM and fabrication method
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
KR20210014778A
(ko)
|
2013-03-15 |
2021-02-09 |
어플라이드 머티어리얼스, 인코포레이티드 |
기판 증착 시스템, 로봇 이송 장치, 및 전자 디바이스 제조 방법
|
TWI624897B
(zh)
|
2013-03-15 |
2018-05-21 |
應用材料股份有限公司 |
多位置批次負載鎖定裝置與系統,以及包括該裝置與系統的方法
|
US10224258B2
(en)
|
2013-03-22 |
2019-03-05 |
Applied Materials, Inc. |
Method of curing thermoplastics with microwave energy
|
US9538586B2
(en)
|
2013-04-26 |
2017-01-03 |
Applied Materials, Inc. |
Method and apparatus for microwave treatment of dielectric films
|
KR101287035B1
(ko)
|
2013-05-07 |
2013-07-17 |
호용종합건설주식회사 |
관 갱생 건증기 공급용 보일러 시스템
|
JP6068633B2
(ja)
|
2013-05-31 |
2017-01-25 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及び炉口蓋体
|
JP6196481B2
(ja)
|
2013-06-24 |
2017-09-13 |
株式会社荏原製作所 |
排ガス処理装置
|
KR101542803B1
(ko)
|
2013-07-09 |
2015-08-07 |
주식회사 네오세미텍 |
고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법
|
US9178103B2
(en)
|
2013-08-09 |
2015-11-03 |
Tsmc Solar Ltd. |
Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities
|
WO2015023404A1
(en)
|
2013-08-16 |
2015-02-19 |
Applied Materials, Inc. |
Tungsten deposition with tungsten hexafluoride (wf6) etchback
|
SG10201804322UA
(en)
|
2013-08-21 |
2018-07-30 |
Applied Materials Inc |
Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications
|
JP6226648B2
(ja)
|
2013-09-04 |
2017-11-08 |
昭和電工株式会社 |
SiCエピタキシャルウェハの製造方法
|
US9396986B2
(en)
|
2013-10-04 |
2016-07-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Mechanism of forming a trench structure
|
JP6129712B2
(ja)
|
2013-10-24 |
2017-05-17 |
信越化学工業株式会社 |
過熱水蒸気処理装置
|
US9406547B2
(en)
|
2013-12-24 |
2016-08-02 |
Intel Corporation |
Techniques for trench isolation using flowable dielectric materials
|
CN103745978B
(zh)
|
2014-01-03 |
2016-08-17 |
京东方科技集团股份有限公司 |
显示装置、阵列基板及其制作方法
|
US9257527B2
(en)
|
2014-02-14 |
2016-02-09 |
International Business Machines Corporation |
Nanowire transistor structures with merged source/drain regions using auxiliary pillars
|
US9818603B2
(en)
|
2014-03-06 |
2017-11-14 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor devices and methods of manufacture thereof
|
KR101571715B1
(ko)
|
2014-04-23 |
2015-11-25 |
주식회사 풍산 |
고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법
|
CN104047676A
(zh)
|
2014-06-14 |
2014-09-17 |
马根昌 |
改良式对冲消声器
|
JP6399417B2
(ja)
|
2014-06-16 |
2018-10-03 |
インテル・コーポレーション |
金属相互接続のシーム修復
|
CN104089491B
(zh)
|
2014-07-03 |
2015-11-04 |
肇庆宏旺金属实业有限公司 |
退火炉的余热回收利用系统
|
US9257314B1
(en)
|
2014-07-31 |
2016-02-09 |
Poongsan Corporation |
Methods and apparatuses for deuterium recovery
|
WO2016038664A1
(ja)
|
2014-09-08 |
2016-03-17 |
三菱電機株式会社 |
半導体アニール装置
|
US9773865B2
(en)
|
2014-09-22 |
2017-09-26 |
International Business Machines Corporation |
Self-forming spacers using oxidation
|
US9362107B2
(en)
|
2014-09-30 |
2016-06-07 |
Applied Materials, Inc. |
Flowable low-k dielectric gapfill treatment
|
CN105575848B
(zh)
*
|
2014-10-17 |
2018-08-28 |
中微半导体设备(上海)有限公司 |
真空锁系统及基片处理方法
|
US20160118391A1
(en)
|
2014-10-22 |
2016-04-28 |
SanDisk Technologies, Inc. |
Deuterium anneal of semiconductor channels in a three-dimensional memory structure
|
EP3209813B1
(en)
|
2014-10-24 |
2019-03-13 |
Versum Materials US, LLC |
Compositions and methods using same for deposition of silicon-containing film
|
US9543141B2
(en)
|
2014-12-09 |
2017-01-10 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Method for curing flowable layer
|
TW201639063A
(zh)
|
2015-01-22 |
2016-11-01 |
應用材料股份有限公司 |
批量加熱和冷卻腔室或負載鎖定裝置
|
KR102650626B1
(ko)
|
2015-02-06 |
2024-03-21 |
버슘머트리얼즈 유에스, 엘엘씨 |
탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법
|
US9859039B2
(en)
|
2015-02-13 |
2018-01-02 |
Alexander Otto |
Multifilament superconducting wire with high resistance sleeves
|
CN107534000B
(zh)
|
2015-04-20 |
2021-12-17 |
应用材料公司 |
缓冲腔室晶片加热机构和支撑机械臂
|
US20160314964A1
(en)
|
2015-04-21 |
2016-10-27 |
Lam Research Corporation |
Gap fill using carbon-based films
|
US9685303B2
(en)
|
2015-05-08 |
2017-06-20 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus for heating and processing a substrate
|
US10443934B2
(en)
|
2015-05-08 |
2019-10-15 |
Varian Semiconductor Equipment Associates, Inc. |
Substrate handling and heating system
|
TWI826223B
(zh)
|
2015-05-11 |
2023-12-11 |
美商應用材料股份有限公司 |
水平環繞式閘極與鰭式場效電晶體元件的隔離
|
KR101681190B1
(ko)
|
2015-05-15 |
2016-12-02 |
세메스 주식회사 |
기판 건조 장치 및 방법
|
US10945313B2
(en)
|
2015-05-27 |
2021-03-09 |
Applied Materials, Inc. |
Methods and apparatus for a microwave batch curing process
|
KR20180006496A
(ko)
|
2015-06-05 |
2018-01-17 |
어플라이드 머티어리얼스, 인코포레이티드 |
서셉터 포지션 및 회전 장치, 및 사용 방법들
|
US9728430B2
(en)
|
2015-06-29 |
2017-08-08 |
Varian Semiconductor Equipment Associates, Inc. |
Electrostatic chuck with LED heating
|
US20160379854A1
(en)
|
2015-06-29 |
2016-12-29 |
Varian Semiconductor Equipment Associates, Inc. |
Vacuum Compatible LED Substrate Heater
|
US9646850B2
(en)
|
2015-07-06 |
2017-05-09 |
Globalfoundries Inc. |
High-pressure anneal
|
US9484406B1
(en)
|
2015-09-03 |
2016-11-01 |
Applied Materials, Inc. |
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
|
US9716142B2
(en)
|
2015-10-12 |
2017-07-25 |
International Business Machines Corporation |
Stacked nanowires
|
US9754840B2
(en)
|
2015-11-16 |
2017-09-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Horizontal gate-all-around device having wrapped-around source and drain
|
KR101744201B1
(ko)
*
|
2015-12-28 |
2017-06-12 |
주식회사 유진테크 |
기판 처리 장치
|
US9633838B2
(en)
|
2015-12-28 |
2017-04-25 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Vapor deposition of silicon-containing films using penta-substituted disilanes
|
JP6856651B2
(ja)
|
2016-01-05 |
2021-04-07 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
半導体アプリケーション用の水平ゲートオールアラウンドデバイスのためのナノワイヤ製造方法
|
US9570551B1
(en)
|
2016-02-05 |
2017-02-14 |
International Business Machines Corporation |
Replacement III-V or germanium nanowires by unilateral confined epitaxial growth
|
JP6240695B2
(ja)
|
2016-03-02 |
2017-11-29 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及びプログラム
|
US11326253B2
(en)
|
2016-04-27 |
2022-05-10 |
Applied Materials, Inc. |
Atomic layer deposition of protective coatings for semiconductor process chamber components
|
TWI680535B
(zh)
|
2016-06-14 |
2019-12-21 |
美商應用材料股份有限公司 |
金屬及含金屬化合物之氧化體積膨脹
|
US9933314B2
(en)
|
2016-06-30 |
2018-04-03 |
Varian Semiconductor Equipment Associates, Inc. |
Semiconductor workpiece temperature measurement system
|
US9876019B1
(en)
|
2016-07-13 |
2018-01-23 |
Globalfoundries Singapore Pte. Ltd. |
Integrated circuits with programmable memory and methods for producing the same
|
JP2019530242A
(ja)
|
2016-09-30 |
2019-10-17 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
自己整合ビアの形成方法
|
US10249525B2
(en)
|
2016-10-03 |
2019-04-02 |
Applied Materials, Inc. |
Dynamic leveling process heater lift
|
US10224224B2
(en)
|
2017-03-10 |
2019-03-05 |
Micromaterials, LLC |
High pressure wafer processing systems and related methods
|
JP7171604B2
(ja)
|
2017-03-31 |
2022-11-15 |
アプライド マテリアルズ インコーポレイテッド |
高アスペクト比トレンチをアモルファスシリコン膜で間隙充填するための2段階プロセス
|
KR20190133276A
(ko)
|
2017-04-21 |
2019-12-02 |
어플라이드 머티어리얼스, 인코포레이티드 |
개선된 전극 조립체
|
JP7235678B2
(ja)
|
2017-05-01 |
2023-03-08 |
アプライド マテリアルズ インコーポレイテッド |
真空分離及び前処理環境を伴う高圧アニールチャンバ
|
JP7175283B2
(ja)
|
2017-05-03 |
2022-11-18 |
アプライド マテリアルズ インコーポレイテッド |
高温セラミックヒータ上の集積化基板温度測定
|
KR102306675B1
(ko)
|
2017-05-19 |
2021-09-28 |
어플라이드 머티어리얼스, 인코포레이티드 |
액체 및 고체 유출물의 수집 및 가스 유출물로의 후속 반응을 위한 장치
|
US10622214B2
(en)
|
2017-05-25 |
2020-04-14 |
Applied Materials, Inc. |
Tungsten defluorination by high pressure treatment
|
US10847360B2
(en)
|
2017-05-25 |
2020-11-24 |
Applied Materials, Inc. |
High pressure treatment of silicon nitride film
|
JP7184810B6
(ja)
|
2017-06-02 |
2022-12-16 |
アプライド マテリアルズ インコーポレイテッド |
基板に堆積された膜の品質改善
|
US10179941B1
(en)
|
2017-07-14 |
2019-01-15 |
Applied Materials, Inc. |
Gas delivery system for high pressure processing chamber
|
US10096516B1
(en)
|
2017-08-18 |
2018-10-09 |
Applied Materials, Inc. |
Method of forming a barrier layer for through via applications
|
US10276411B2
(en)
|
2017-08-18 |
2019-04-30 |
Applied Materials, Inc. |
High pressure and high temperature anneal chamber
|
KR102405723B1
(ko)
|
2017-08-18 |
2022-06-07 |
어플라이드 머티어리얼스, 인코포레이티드 |
고압 및 고온 어닐링 챔버
|
US10643867B2
(en)
|
2017-11-03 |
2020-05-05 |
Applied Materials, Inc. |
Annealing system and method
|
KR20230144106A
(ko)
|
2017-11-11 |
2023-10-13 |
마이크로머티어리얼즈 엘엘씨 |
고압 프로세싱 챔버를 위한 가스 전달 시스템
|
CN111432920A
(zh)
|
2017-11-17 |
2020-07-17 |
应用材料公司 |
用于高压处理系统的冷凝器系统
|
WO2019147400A1
(en)
|
2018-01-24 |
2019-08-01 |
Applied Materials, Inc. |
Seam healing using high pressure anneal
|
WO2019164636A1
(en)
|
2018-02-22 |
2019-08-29 |
Applied Materials, Inc. |
Method for processing a mask substrate to enable better film quality
|
US11114333B2
(en)
|
2018-02-22 |
2021-09-07 |
Micromaterials, LLC |
Method for depositing and reflow of a high quality etch resistant gapfill dielectric film
|
KR102536820B1
(ko)
|
2018-03-09 |
2023-05-24 |
어플라이드 머티어리얼스, 인코포레이티드 |
금속 함유 재료들을 위한 고압 어닐링 프로세스
|
US10714331B2
(en)
|
2018-04-04 |
2020-07-14 |
Applied Materials, Inc. |
Method to fabricate thermally stable low K-FinFET spacer
|
WO2019204124A1
(en)
|
2018-04-20 |
2019-10-24 |
Applied Materials, Inc. |
Ceramic wafer heater with integrated pressurized helium cooling
|
US11434569B2
(en)
|
2018-05-25 |
2022-09-06 |
Applied Materials, Inc. |
Ground path systems for providing a shorter and symmetrical ground path
|
US11499666B2
(en)
|
2018-05-25 |
2022-11-15 |
Applied Materials, Inc. |
Precision dynamic leveling mechanism with long motion capability
|
US10704141B2
(en)
|
2018-06-01 |
2020-07-07 |
Applied Materials, Inc. |
In-situ CVD and ALD coating of chamber to control metal contamination
|
US20200035513A1
(en)
|
2018-07-25 |
2020-01-30 |
Applied Materials, Inc. |
Processing apparatus
|
US10748783B2
(en)
|
2018-07-25 |
2020-08-18 |
Applied Materials, Inc. |
Gas delivery module
|