RU2010138584A - Осаждение и селективное удаление электропроводного вспомогательного слоя для обработки наноструктуры - Google Patents

Осаждение и селективное удаление электропроводного вспомогательного слоя для обработки наноструктуры Download PDF

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Publication number
RU2010138584A
RU2010138584A RU2010138584/28A RU2010138584A RU2010138584A RU 2010138584 A RU2010138584 A RU 2010138584A RU 2010138584/28 A RU2010138584/28 A RU 2010138584/28A RU 2010138584 A RU2010138584 A RU 2010138584A RU 2010138584 A RU2010138584 A RU 2010138584A
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Russia
Prior art keywords
electrically conductive
layer
conductive auxiliary
nanostructures
auxiliary layer
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RU2010138584/28A
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English (en)
Russian (ru)
Inventor
Йонас БЕРГ (SE)
Йонас БЕРГ
Винсент ДЕСМАРИС (SE)
Винсент ДЕСМАРИС
Мохаммад Шафикул КАБИР (SE)
Мохаммад Шафикул КАБИР
Амин МУХАММАД (SE)
Амин МУХАММАД
Дэвид БРУД (SE)
Дэвид БРУД
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Смольтек Аб (Se)
Смольтек Аб
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Publication of RU2010138584A publication Critical patent/RU2010138584A/ru

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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
RU2010138584/28A 2008-02-25 2009-02-20 Осаждение и селективное удаление электропроводного вспомогательного слоя для обработки наноструктуры RU2010138584A (ru)

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US3133308P 2008-02-25 2008-02-25
US61/031,333 2008-02-25

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RU2010138584A true RU2010138584A (ru) 2012-04-10

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US (5) US8508049B2 (enExample)
EP (1) EP2250661B1 (enExample)
JP (4) JP5474835B2 (enExample)
KR (2) KR20160078517A (enExample)
CN (2) CN102007571B (enExample)
RU (1) RU2010138584A (enExample)
TW (1) TWI465389B (enExample)
WO (1) WO2009108101A1 (enExample)

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US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
RU2010114227A (ru) * 2007-09-12 2011-10-20 Смольтек Аб (Se) Соединение и связывание соседних слоев наноструктурами
KR20160078517A (ko) 2008-02-25 2016-07-04 스몰텍 에이비 나노구조 프로세싱을 위한 도전성 보조층의 증착과 선택적 제거
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
CN102110624B (zh) * 2009-12-23 2012-05-30 中芯国际集成电路制造(上海)有限公司 检测镍铂去除装置的方法
WO2012074271A2 (ko) * 2010-12-01 2012-06-07 Lee Choonrae 전계방출 표시장치와 그 제조방법
CN102299058B (zh) * 2011-05-10 2013-02-27 吉林大学 通过多级异质结构纳米材料构筑微电子器件的方法
EP2541581A1 (en) * 2011-06-29 2013-01-02 Khalid Waqas Device comprising nanostructures and method of manufacturing thereof
RU2497319C1 (ru) * 2012-02-28 2013-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов
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