TW200506998A - Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method - Google Patents

Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method

Info

Publication number
TW200506998A
TW200506998A TW093115858A TW93115858A TW200506998A TW 200506998 A TW200506998 A TW 200506998A TW 093115858 A TW093115858 A TW 093115858A TW 93115858 A TW93115858 A TW 93115858A TW 200506998 A TW200506998 A TW 200506998A
Authority
TW
Taiwan
Prior art keywords
electron
carbon nanotubes
substrate
emissive elements
emitting device
Prior art date
Application number
TW093115858A
Other languages
Chinese (zh)
Inventor
Sung-Gu Kang
Woo-Kyung Bae
Jung-Jae Kim
Original Assignee
Cdream Display Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/600,226 external-priority patent/US7175494B1/en
Application filed by Cdream Display Corp filed Critical Cdream Display Corp
Publication of TW200506998A publication Critical patent/TW200506998A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300℃ to 500℃ compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
TW093115858A 2003-06-19 2004-06-02 Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method TW200506998A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/600,226 US7175494B1 (en) 2002-08-22 2003-06-19 Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device

Publications (1)

Publication Number Publication Date
TW200506998A true TW200506998A (en) 2005-02-16

Family

ID=33564092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115858A TW200506998A (en) 2003-06-19 2004-06-02 Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method

Country Status (2)

Country Link
TW (1) TW200506998A (en)
WO (1) WO2005004185A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102007571B (en) * 2008-02-25 2016-01-20 斯莫特克有限公司 Conduction in nanostructure manufacture process helps the deposition of layer and selectivity to remove

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692717B1 (en) * 1999-09-17 2004-02-17 William Marsh Rice University Catalytic growth of single-wall carbon nanotubes from metal particles
JP3484441B2 (en) * 1999-04-21 2004-01-06 震 張 Method for producing carbon nanotube
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
US6413487B1 (en) * 2000-06-02 2002-07-02 The Board Of Regents Of The University Of Oklahoma Method and apparatus for producing carbon nanotubes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102007571B (en) * 2008-02-25 2016-01-20 斯莫特克有限公司 Conduction in nanostructure manufacture process helps the deposition of layer and selectivity to remove

Also Published As

Publication number Publication date
WO2005004185A2 (en) 2005-01-13
WO2005004185A3 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
KR100745735B1 (en) Method for growing carbon nanotubes and manufacturing method of field emission device therewith
EP1505627A3 (en) Magnetron
EP1134304A3 (en) Method of vertically aligning carbon nanotubes on substrates using thermal chemical vapor deposition with dc bias
WO2006091291A3 (en) Apparatus and process for carbon nanotube growth
WO2002081371A3 (en) Chemical vapor deposition growth of single-wall carbon nanotubes
WO2004049369A3 (en) Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
JP2002151422A5 (en)
JP2006507211A5 (en)
CN112875742A (en) Gallium oxide nanotube and preparation method and application thereof
Tokuda Homoepitaxial diamond growth by plasma-enhanced chemical vapor deposition
CN104332545A (en) Low-electrical-resistivity p-type aluminum gallium nitrogen material and preparation method thereof
CN109081332A (en) Graphene nano graphical sapphire substrate and preparation method thereof
TW200735183A (en) Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate
Jan et al. Fabrication of nano-size conic diamond arrays by bias assisted PCVD
CN107601473B (en) A kind of modified chemical vapor deposition process (MCVD) preparing uniform grapheme material
KR970063343A (en) How to make diamond tip of bed
TW200506998A (en) Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method
CN105129785A (en) Preparation method of graphene on insulator
Chung et al. Novel plasma chemical vapor deposition method of carbon nanotubes at low temperature for field emission display application
Sherehiy et al. Thermionic emission from phosphorus (P) doped diamond nanocrystals supported by conical carbon nanotubes and ultraviolet photoelectron spectroscopy study of P-doped diamond films
JP2007284311A (en) Manufacturing method of carbon nano-material
TW200715606A (en) (Al, Ga, In)N-based compound semiconductor and method of fabricating the same
CN113089091A (en) Boron nitride template and preparation method thereof
Moon et al. Growth behavior of GaN nanoneedles with changing HCl/NH3 flow ratio
Rodrigues Analysis of the current-transport mechanism across a CVD diamond/silicon interface