JP5474835B2 - ナノ構造処理のための導電性補助層の形成及び選択的除去 - Google Patents

ナノ構造処理のための導電性補助層の形成及び選択的除去 Download PDF

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JP5474835B2
JP5474835B2 JP2010548640A JP2010548640A JP5474835B2 JP 5474835 B2 JP5474835 B2 JP 5474835B2 JP 2010548640 A JP2010548640 A JP 2010548640A JP 2010548640 A JP2010548640 A JP 2010548640A JP 5474835 B2 JP5474835 B2 JP 5474835B2
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nanostructures
auxiliary layer
conductive auxiliary
substrate
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JP2011517366A5 (enExample
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ヨナス ベリ，
ヴィンセント デスマリス，
モハマド， シャフィクル カビール，
アミン ムハンマド，
ダヴィド ブルド，
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スモルテック アーベー
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
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  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010548640A 2008-02-25 2009-02-20 ナノ構造処理のための導電性補助層の形成及び選択的除去 Active JP5474835B2 (ja)

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Application Number Priority Date Filing Date Title
US3133308P 2008-02-25 2008-02-25
US61/031,333 2008-02-25
PCT/SE2009/000098 WO2009108101A1 (en) 2008-02-25 2009-02-20 Deposition and selective removal of conducting helplayer for nanostructure processing

Related Child Applications (1)

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JP2014019438A Division JP5943947B2 (ja) 2008-02-25 2014-02-04 ナノ構造処理のための導電性補助層の形成及び選択的除去

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