SE0200868D0 - Theoretical model för a nanorelay and same relay - Google Patents
Theoretical model för a nanorelay and same relayInfo
- Publication number
- SE0200868D0 SE0200868D0 SE0200868A SE0200868A SE0200868D0 SE 0200868 D0 SE0200868 D0 SE 0200868D0 SE 0200868 A SE0200868 A SE 0200868A SE 0200868 A SE0200868 A SE 0200868A SE 0200868 D0 SE0200868 D0 SE 0200868D0
- Authority
- SE
- Sweden
- Prior art keywords
- nanotube
- force
- nanorelay
- theoretical model
- same relay
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/17—Memory cell being a nanowire transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0200868A SE0200868D0 (sv) | 2002-03-20 | 2002-03-20 | Theoretical model för a nanorelay and same relay |
AU2002306036A AU2002306036A1 (en) | 2002-03-20 | 2002-05-02 | Nanotube relay device |
US10/508,288 US7279760B2 (en) | 2002-03-20 | 2002-05-02 | Nanotube relay device |
EP02733653A EP1490294A1 (en) | 2002-03-20 | 2002-05-02 | Nanotube relay device |
PCT/SE2002/000853 WO2003078305A1 (en) | 2002-03-20 | 2002-05-02 | Nanotube relay device |
JP2003576325A JP2005521196A (ja) | 2002-03-20 | 2002-05-02 | ナノチューブリレイ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0200868A SE0200868D0 (sv) | 2002-03-20 | 2002-03-20 | Theoretical model för a nanorelay and same relay |
Publications (1)
Publication Number | Publication Date |
---|---|
SE0200868D0 true SE0200868D0 (sv) | 2002-03-20 |
Family
ID=20287348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0200868A SE0200868D0 (sv) | 2002-03-20 | 2002-03-20 | Theoretical model för a nanorelay and same relay |
Country Status (6)
Country | Link |
---|---|
US (1) | US7279760B2 (sv) |
EP (1) | EP1490294A1 (sv) |
JP (1) | JP2005521196A (sv) |
AU (1) | AU2002306036A1 (sv) |
SE (1) | SE0200868D0 (sv) |
WO (1) | WO2003078305A1 (sv) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US6593666B1 (en) | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
AU2003901914A0 (en) * | 2003-04-22 | 2003-05-08 | Quantum Precision Instruments Pty Ltd | Quantum tunnelling transducer device |
US7199498B2 (en) | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
US7095645B2 (en) * | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
US7148579B2 (en) | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
WO2005048296A2 (en) * | 2003-08-13 | 2005-05-26 | Nantero, Inc. | Nanotube-based switching elements with multiple controls and circuits made from same |
US20060086994A1 (en) * | 2004-05-14 | 2006-04-27 | Susanne Viefers | Nanoelectromechanical components |
EP2586744B1 (en) | 2005-04-25 | 2016-01-13 | Smoltek AB | Nanostructure and precursor formation on conducting substrate |
US7777291B2 (en) | 2005-08-26 | 2010-08-17 | Smoltek Ab | Integrated circuits having interconnects and heat dissipators based on nanostructures |
US7629192B2 (en) * | 2005-10-13 | 2009-12-08 | International Business Machines Corporation | Passive electrically testable acceleration and voltage measurement devices |
JP4843760B2 (ja) * | 2005-12-26 | 2011-12-21 | 株式会社発明屋 | カーボンナノチューブを用いた記憶素子 |
US8031514B2 (en) * | 2007-04-09 | 2011-10-04 | Northeastern University | Bistable nanoswitch |
CN104600057B (zh) | 2007-09-12 | 2018-11-02 | 斯莫特克有限公司 | 使用纳米结构连接和粘接相邻层 |
WO2009049666A1 (en) | 2007-10-15 | 2009-04-23 | Nokia Corporation | Nanotube device |
US7932792B2 (en) | 2008-02-22 | 2011-04-26 | Nokia Corporation | Nanotube device |
EP2250661B1 (en) | 2008-02-25 | 2020-04-08 | Smoltek AB | Deposition and selective removal of conducting helplayer for nanostructure processing |
US7791433B2 (en) | 2008-02-29 | 2010-09-07 | Nokia Corporation | Apparatus, method, and computer program product providing edgeless carbon nanotube resonator arrays |
WO2010039983A2 (en) * | 2008-10-01 | 2010-04-08 | Pinkerton Joseph F | Nanoelectromechanical tunneling current switch systems |
JP5407334B2 (ja) * | 2009-01-05 | 2014-02-05 | セイコーエプソン株式会社 | スイッチング素子基板およびその製造方法、電気光学装置、プロジェクター |
EP2363870A1 (en) | 2010-03-04 | 2011-09-07 | Thomson Licensing | Electromechanical switch, storage device comprising such an electromechanical switch and method for operating the same |
US9705450B2 (en) * | 2011-06-24 | 2017-07-11 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus and methods for time domain measurement of oscillation perturbations |
US8693242B2 (en) | 2012-02-16 | 2014-04-08 | Elwha Llc | Nanotube based nanoelectromechanical device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6160230A (en) | 1999-03-01 | 2000-12-12 | Raytheon Company | Method and apparatus for an improved single pole double throw micro-electrical mechanical switch |
CA2372707C (en) * | 1999-07-02 | 2014-12-09 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and method of their manufacture |
DE10006964C2 (de) * | 2000-02-16 | 2002-01-31 | Infineon Technologies Ag | Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements |
DE10034315C2 (de) | 2000-07-14 | 2002-11-28 | Infineon Technologies Ag | Analog-Digital-Wandler |
AU2002344316A1 (en) * | 2001-01-19 | 2002-11-25 | California Institute Of Technology | Carbon nanobimorph actuator and sensor |
US6919592B2 (en) * | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
-
2002
- 2002-03-20 SE SE0200868A patent/SE0200868D0/sv unknown
- 2002-05-02 EP EP02733653A patent/EP1490294A1/en not_active Withdrawn
- 2002-05-02 JP JP2003576325A patent/JP2005521196A/ja active Pending
- 2002-05-02 WO PCT/SE2002/000853 patent/WO2003078305A1/en active Application Filing
- 2002-05-02 AU AU2002306036A patent/AU2002306036A1/en not_active Abandoned
- 2002-05-02 US US10/508,288 patent/US7279760B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7279760B2 (en) | 2007-10-09 |
US20050230710A1 (en) | 2005-10-20 |
AU2002306036A1 (en) | 2003-09-29 |
EP1490294A1 (en) | 2004-12-29 |
WO2003078305A1 (en) | 2003-09-25 |
JP2005521196A (ja) | 2005-07-14 |
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