ATE535021T1 - Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate - Google Patents

Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate

Info

Publication number
ATE535021T1
ATE535021T1 AT05742101T AT05742101T ATE535021T1 AT E535021 T1 ATE535021 T1 AT E535021T1 AT 05742101 T AT05742101 T AT 05742101T AT 05742101 T AT05742101 T AT 05742101T AT E535021 T1 ATE535021 T1 AT E535021T1
Authority
AT
Austria
Prior art keywords
nanotube
force
source
drain
electromechanical
Prior art date
Application number
AT05742101T
Other languages
English (en)
Inventor
Susanne Viefers
Tomas Nord
Jari Kinaret
Magnus Jonsson
Sven Axelsson
Original Assignee
Chalmers Intellectual Property Rights Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chalmers Intellectual Property Rights Ab filed Critical Chalmers Intellectual Property Rights Ab
Application granted granted Critical
Publication of ATE535021T1 publication Critical patent/ATE535021T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/462—Microelectro-mechanical filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0036—Movable armature with higher resonant frequency for faster switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Micromachines (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT05742101T 2004-05-14 2005-05-16 Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate ATE535021T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57088204P 2004-05-14 2004-05-14
PCT/SE2005/000691 WO2005112126A1 (en) 2004-05-14 2005-05-16 Electromechanical nanotube tunneling device comprising source, drain and gate

Publications (1)

Publication Number Publication Date
ATE535021T1 true ATE535021T1 (de) 2011-12-15

Family

ID=35394430

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05742101T ATE535021T1 (de) 2004-05-14 2005-05-16 Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate

Country Status (5)

Country Link
US (1) US20060086994A1 (de)
EP (1) EP1745516B1 (de)
JP (1) JP4995717B2 (de)
AT (1) ATE535021T1 (de)
WO (1) WO2005112126A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8749054B2 (en) 2010-06-24 2014-06-10 L. Pierre de Rochemont Semiconductor carrier with vertical power FET module
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7148579B2 (en) * 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
WO2006039699A2 (en) 2004-10-01 2006-04-13 De Rochemont L Pierre Ceramic antenna module and methods of manufacture thereof
WO2006115453A1 (en) 2005-04-25 2006-11-02 Smoltek Ab Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same
CN101213638B (zh) 2005-06-30 2011-07-06 L·皮尔·德罗什蒙 电子元件及制造方法
EP1910217A2 (de) * 2005-07-19 2008-04-16 PINKERTON, Joseph P. Wärmeaktivierte pumpe im nanometerbereich
US7612424B1 (en) * 2005-07-22 2009-11-03 Northwestern University Nanoelectromechanical bistable cantilever device
US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
JP4599256B2 (ja) * 2005-09-09 2010-12-15 株式会社東芝 磁気スイッチング素子及びこれを用いた信号処理装置
JP4843760B2 (ja) * 2005-12-26 2011-12-21 株式会社発明屋 カーボンナノチューブを用いた記憶素子
KR100695167B1 (ko) * 2006-01-04 2007-03-14 삼성전자주식회사 다중벽 탄소나노튜브를 이용한 불휘발성 탄소나노튜브메모리 소자 및 그 동작방법
US8354294B2 (en) 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
US8251538B2 (en) * 2006-06-14 2012-08-28 Koninklijke Philips Electronics N.V. Lighting device
US8385113B2 (en) 2007-04-03 2013-02-26 Cjp Ip Holdings, Ltd. Nanoelectromechanical systems and methods for making the same
CN101827782B (zh) 2007-09-12 2014-12-10 斯莫特克有限公司 使用纳米结构连接和粘接相邻层
CN101816079A (zh) 2007-10-15 2010-08-25 诺基亚公司 纳米管器件
US7932792B2 (en) * 2008-02-22 2011-04-26 Nokia Corporation Nanotube device
CN105441903B (zh) 2008-02-25 2018-04-24 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
US7791433B2 (en) 2008-02-29 2010-09-07 Nokia Corporation Apparatus, method, and computer program product providing edgeless carbon nanotube resonator arrays
DE102008031820A1 (de) * 2008-07-04 2010-01-14 Siemens Aktiengesellschaft Sensoreinrichtung zum Messen eines elektrischen Feldes und Verfahren zu deren Herstellung
DE102008031819A1 (de) * 2008-07-05 2010-01-14 Forschungszentrum Jülich GmbH Drei- oder Mehrtorbauelement auf Basis des Tunneleffekts
US7959598B2 (en) 2008-08-20 2011-06-14 Asante Solutions, Inc. Infusion pump systems and methods
US8952858B2 (en) 2009-06-17 2015-02-10 L. Pierre de Rochemont Frequency-selective dipole antennas
US8922347B1 (en) 2009-06-17 2014-12-30 L. Pierre de Rochemont R.F. energy collection circuit for wireless devices
US8084336B2 (en) 2009-09-10 2011-12-27 Nokia Corporation Oscillator apparatus
US8044738B2 (en) 2009-09-10 2011-10-25 Nokia Corporation Oscillator apparatus
US8552708B2 (en) 2010-06-02 2013-10-08 L. Pierre de Rochemont Monolithic DC/DC power management module with surface FET
US20110317325A1 (en) * 2010-06-18 2011-12-29 Northwestern University Electrodes to improve reliability of nanoelectromechanical systems
US9023493B2 (en) 2010-07-13 2015-05-05 L. Pierre de Rochemont Chemically complex ablative max-phase material and method of manufacture
WO2012027412A1 (en) * 2010-08-23 2012-03-01 De Rochemont L Pierre Power fet with a resonant transistor gate
US9123768B2 (en) 2010-11-03 2015-09-01 L. Pierre de Rochemont Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof
US9561324B2 (en) 2013-07-19 2017-02-07 Bigfoot Biomedical, Inc. Infusion pump system and method
GB2518185A (en) 2013-09-12 2015-03-18 Ibm Electromechanical switching device wtih 2D layered material surfaces
US10275573B2 (en) 2016-01-13 2019-04-30 Bigfoot Biomedical, Inc. User interface for diabetes management system
EP3374004B1 (de) 2016-01-14 2023-06-28 Bigfoot Biomedical, Inc. Anpassung der insulinabgaberaten
WO2018050965A1 (en) * 2016-09-14 2018-03-22 Aalto University Foundation Sr An accelerometer device and method for manufacturing the accelerometer device
EP3500161A4 (de) 2016-12-12 2020-01-08 Bigfoot Biomedical, Inc. Alarme und warnungen für medikamentenabgabevorrichtungen und zugehörige systeme und verfahren
WO2018132754A1 (en) 2017-01-13 2018-07-19 Mazlish Bryan System and method for adjusting insulin delivery
EP3568859A1 (de) 2017-01-13 2019-11-20 Bigfoot Biomedical, Inc. Insulinverabreichungsverfahren, -systeme und -vorrichtungen
USD874471S1 (en) 2017-06-08 2020-02-04 Insulet Corporation Display screen with a graphical user interface
USD928199S1 (en) 2018-04-02 2021-08-17 Bigfoot Biomedical, Inc. Medication delivery device with icons
USD920343S1 (en) 2019-01-09 2021-05-25 Bigfoot Biomedical, Inc. Display screen or portion thereof with graphical user interface associated with insulin delivery
USD977502S1 (en) 2020-06-09 2023-02-07 Insulet Corporation Display screen with graphical user interface

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
JP3958330B2 (ja) * 1997-10-30 2007-08-15 キヤノン株式会社 カーボンナノチューブデバイスおよびその製造方法
DE10006964C2 (de) 2000-02-16 2002-01-31 Infineon Technologies Ag Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
JP4112358B2 (ja) * 2000-07-04 2008-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電界効果トランジスタ
DE10034315C2 (de) 2000-07-14 2002-11-28 Infineon Technologies Ag Analog-Digital-Wandler
JP4140180B2 (ja) * 2000-08-31 2008-08-27 富士ゼロックス株式会社 トランジスタ
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6835613B2 (en) * 2001-12-06 2004-12-28 University Of South Florida Method of producing an integrated circuit with a carbon nanotube
SE0200868D0 (sv) * 2002-03-20 2002-03-20 Chalmers Technology Licensing Theoretical model för a nanorelay and same relay
US7112816B2 (en) * 2002-04-12 2006-09-26 University Of South Flordia Carbon nanotube sensor and method of producing the same
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
JP2005300490A (ja) * 2004-04-16 2005-10-27 Nippon Telegr & Teleph Corp <Ntt> メカニカル検出素子および検出器

Also Published As

Publication number Publication date
JP2008502125A (ja) 2008-01-24
US20060086994A1 (en) 2006-04-27
EP1745516A1 (de) 2007-01-24
JP4995717B2 (ja) 2012-08-08
WO2005112126A1 (en) 2005-11-24
EP1745516B1 (de) 2011-11-23

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