JP2011517366A5 - - Google Patents

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JP2011517366A5
JP2011517366A5 JP2010548640A JP2010548640A JP2011517366A5 JP 2011517366 A5 JP2011517366 A5 JP 2011517366A5 JP 2010548640 A JP2010548640 A JP 2010548640A JP 2010548640 A JP2010548640 A JP 2010548640A JP 2011517366 A5 JP2011517366 A5 JP 2011517366A5
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conductive auxiliary
nanostructures
auxiliary layer
layer
substrate
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JP2011517366A (ja
JP5474835B2 (ja
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Priority claimed from PCT/SE2009/000098 external-priority patent/WO2009108101A1/en
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JP2010548640A 2008-02-25 2009-02-20 ナノ構造処理のための導電性補助層の形成及び選択的除去 Active JP5474835B2 (ja)

Applications Claiming Priority (3)

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US3133308P 2008-02-25 2008-02-25
US61/031,333 2008-02-25
PCT/SE2009/000098 WO2009108101A1 (en) 2008-02-25 2009-02-20 Deposition and selective removal of conducting helplayer for nanostructure processing

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JP2014019438A Division JP5943947B2 (ja) 2008-02-25 2014-02-04 ナノ構造処理のための導電性補助層の形成及び選択的除去

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JP2011517366A JP2011517366A (ja) 2011-06-02
JP2011517366A5 true JP2011517366A5 (enExample) 2012-04-05
JP5474835B2 JP5474835B2 (ja) 2014-04-16

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JP2010548640A Active JP5474835B2 (ja) 2008-02-25 2009-02-20 ナノ構造処理のための導電性補助層の形成及び選択的除去
JP2014019438A Active JP5943947B2 (ja) 2008-02-25 2014-02-04 ナノ構造処理のための導電性補助層の形成及び選択的除去
JP2016103110A Active JP6126725B2 (ja) 2008-02-25 2016-05-24 ナノ構造処理のための導電性補助層の形成及び選択的除去
JP2017074919A Pending JP2017152716A (ja) 2008-02-25 2017-04-05 ナノ構造処理のための導電性補助層の形成及び選択的除去

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JP2016103110A Active JP6126725B2 (ja) 2008-02-25 2016-05-24 ナノ構造処理のための導電性補助層の形成及び選択的除去
JP2017074919A Pending JP2017152716A (ja) 2008-02-25 2017-04-05 ナノ構造処理のための導電性補助層の形成及び選択的除去

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US (5) US8508049B2 (enExample)
EP (1) EP2250661B1 (enExample)
JP (4) JP5474835B2 (enExample)
KR (2) KR20160078517A (enExample)
CN (2) CN105441903B (enExample)
RU (1) RU2010138584A (enExample)
TW (1) TWI465389B (enExample)
WO (1) WO2009108101A1 (enExample)

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