JP2007538402A5 - - Google Patents

Download PDF

Info

Publication number
JP2007538402A5
JP2007538402A5 JP2007527194A JP2007527194A JP2007538402A5 JP 2007538402 A5 JP2007538402 A5 JP 2007538402A5 JP 2007527194 A JP2007527194 A JP 2007527194A JP 2007527194 A JP2007527194 A JP 2007527194A JP 2007538402 A5 JP2007538402 A5 JP 2007538402A5
Authority
JP
Japan
Prior art keywords
contact
layer
forming
nitride
channel layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007527194A
Other languages
English (en)
Japanese (ja)
Other versions
JP5160225B2 (ja
JP2007538402A (ja
Filing date
Publication date
Priority claimed from US10/849,617 external-priority patent/US7432142B2/en
Application filed filed Critical
Publication of JP2007538402A publication Critical patent/JP2007538402A/ja
Publication of JP2007538402A5 publication Critical patent/JP2007538402A5/ja
Application granted granted Critical
Publication of JP5160225B2 publication Critical patent/JP5160225B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2007527194A 2004-05-20 2005-02-09 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ Expired - Lifetime JP5160225B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/849,617 US7432142B2 (en) 2004-05-20 2004-05-20 Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US10/849,617 2004-05-20
PCT/US2005/004039 WO2005119787A1 (en) 2004-05-20 2005-02-09 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions

Publications (3)

Publication Number Publication Date
JP2007538402A JP2007538402A (ja) 2007-12-27
JP2007538402A5 true JP2007538402A5 (enExample) 2008-03-21
JP5160225B2 JP5160225B2 (ja) 2013-03-13

Family

ID=34961328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007527194A Expired - Lifetime JP5160225B2 (ja) 2004-05-20 2005-02-09 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ

Country Status (8)

Country Link
US (1) US7432142B2 (enExample)
EP (1) EP1747589B1 (enExample)
JP (1) JP5160225B2 (enExample)
KR (1) KR20070032701A (enExample)
CN (1) CN1998085B (enExample)
CA (1) CA2567066A1 (enExample)
TW (1) TW200539264A (enExample)
WO (1) WO2005119787A1 (enExample)

Families Citing this family (161)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2454269C (en) 2001-07-24 2015-07-07 Primit Parikh Insulating gate algan/gan hemt
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
EP1495167A1 (en) * 2002-04-15 2005-01-12 The Regents Of The University Of California NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
JP4889203B2 (ja) * 2004-04-21 2012-03-07 新日本無線株式会社 窒化物半導体装置及びその製造方法
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
JP4940557B2 (ja) * 2005-02-08 2012-05-30 日本電気株式会社 電界効果トランジスタ及びその製造方法
EP2315253A1 (en) * 2005-03-10 2011-04-27 The Regents of the University of California Technique for the growth of planar semi-polar gallium nitride
US20060226442A1 (en) 2005-04-07 2006-10-12 An-Ping Zhang GaN-based high electron mobility transistor and method for making the same
TWI377602B (en) * 2005-05-31 2012-11-21 Japan Science & Tech Agency Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)
TW200703463A (en) * 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
US9331192B2 (en) 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US8148244B2 (en) * 2005-07-13 2012-04-03 The Regents Of The University Of California Lateral growth method for defect reduction of semipolar nitride films
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
WO2007030709A2 (en) * 2005-09-09 2007-03-15 The Regents Of The University Of California METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al, In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
US7338826B2 (en) * 2005-12-09 2008-03-04 The United States Of America As Represented By The Secretary Of The Navy Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
EP1977441A4 (en) * 2006-01-20 2010-12-01 Univ California METHOD FOR IMPROVING THE GROWTH OF A LAYER OF (AL, IN, Ga, B) N SEMI-POLAR VIA AN ORGANOMETALLIC VAPOR PHASE CHEMICAL DEPOSITION
WO2007084782A2 (en) * 2006-01-20 2007-07-26 The Regents Of The University Of California Method for improved growth of semipolar (al,in,ga,b)n
US8193079B2 (en) * 2006-02-10 2012-06-05 The Regents Of The University Of California Method for conductivity control of (Al,In,Ga,B)N
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
US20100095882A1 (en) * 2008-10-16 2010-04-22 Tadao Hashimoto Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US8728234B2 (en) * 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US9803293B2 (en) * 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers
KR20090018106A (ko) 2006-05-09 2009-02-19 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 준극성 (ａｌ, ｇａ, ｉｎ)ｎ을 위한 인-시츄 결함 감소 기술
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts
JP5179023B2 (ja) * 2006-05-31 2013-04-10 パナソニック株式会社 電界効果トランジスタ
US20080078439A1 (en) * 2006-06-23 2008-04-03 Michael Grundmann Polarization-induced tunnel junction
WO2008021403A2 (en) * 2006-08-16 2008-02-21 The Regents Of The University Of California Method for deposition of magnesium doped (al, in, ga, b)n layers
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
CA2669228C (en) * 2006-11-15 2014-12-16 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
US8193020B2 (en) * 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8878245B2 (en) * 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
WO2008073385A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
TW200845135A (en) * 2006-12-12 2008-11-16 Univ California Crystal growth of M-plane and semi-polar planes of (Al, In, Ga, B)N on various substrates
US9076852B2 (en) * 2007-01-19 2015-07-07 International Rectifier Corporation III nitride power device with reduced QGD
JP4876927B2 (ja) * 2007-01-22 2012-02-15 住友電気工業株式会社 半導体デバイスを形成する方法
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
JP2010518625A (ja) * 2007-02-12 2010-05-27 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性｛１１−２ｎ｝バルク窒化ガリウム基板上で成長したへき開型ファセットの（Ｇａ，Ａｌ，Ｉｎ）Ｎ端面放射型レーザダイオード
WO2008100505A1 (en) * 2007-02-12 2008-08-21 The Regents Of The University Of California Optimization of laser bar orientation for nonpolar and semipolar (ga,ai,in,b)n diode lasers
TW200903858A (en) * 2007-03-09 2009-01-16 Univ California Method to fabricate III-N field effect transistors using ion implantation with reduced dopant activation and damage recovery temperature
US8212290B2 (en) * 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
FR2914500B1 (fr) * 2007-03-30 2009-11-20 Picogiga Internat Dispositif electronique a contact ohmique ameliore
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
WO2008137573A1 (en) * 2007-05-01 2008-11-13 The Regents Of The University Of California Light emitting diode device layer structure using an indium gallium nitride contact layer
TWI339444B (en) 2007-05-30 2011-03-21 Au Optronics Corp Conductor structure, pixel structure, and methods of forming the same
JP2009010107A (ja) * 2007-06-27 2009-01-15 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP5202897B2 (ja) * 2007-07-25 2013-06-05 住友電工デバイス・イノベーション株式会社 電界効果トランジスタおよびその製造方法
JP2010536181A (ja) * 2007-08-08 2010-11-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ミスカット基板上に成長した平面型非極性ｍ平面ｉｉｉ族窒化物薄膜
JP2010536182A (ja) * 2007-08-08 2010-11-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 長波長放射を有する非極性ｉｉｉ窒化物発光ダイオード
US7875537B2 (en) * 2007-08-29 2011-01-25 Cree, Inc. High temperature ion implantation of nitride based HEMTs
US8183557B2 (en) * 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
KR20100067114A (ko) 2007-09-19 2010-06-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 반극성 질화물 기판들의 면적을 증가하기 위한 방법
WO2009039398A1 (en) * 2007-09-19 2009-03-26 The Regents Of The University Of California Gallium nitride bulk crystals and their growth method
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US7750370B2 (en) * 2007-12-20 2010-07-06 Northrop Grumman Space & Mission Systems Corp. High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
WO2009097611A1 (en) 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US9711633B2 (en) * 2008-05-09 2017-07-18 Cree, Inc. Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
WO2009149300A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
WO2009151642A1 (en) 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
US8384115B2 (en) * 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
KR20110097813A (ko) * 2008-11-07 2011-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정들의 암모노열 성장을 위한 신규한 용기 설계 및 소스 물질과 씨드 결정들의 상기 용기에 대한 상대적인 배치
WO2010060034A1 (en) * 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8674409B2 (en) 2008-12-26 2014-03-18 Renesas Electronics Corporation Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device
US7759142B1 (en) * 2008-12-31 2010-07-20 Intel Corporation Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
US8741715B2 (en) * 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
WO2010129718A2 (en) * 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US20100309943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
WO2011005444A1 (en) 2009-06-22 2011-01-13 Raytheon Company Gallium nitride for liquid crystal electrodes
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP5580009B2 (ja) * 2009-08-28 2014-08-27 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法
JP5609055B2 (ja) * 2009-10-02 2014-10-22 富士通株式会社 化合物半導体装置及びその製造方法
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8633470B2 (en) * 2009-12-23 2014-01-21 Intel Corporation Techniques and configurations to impart strain to integrated circuit devices
US8936976B2 (en) * 2009-12-23 2015-01-20 Intel Corporation Conductivity improvements for III-V semiconductor devices
US8242510B2 (en) * 2010-01-28 2012-08-14 Intersil Americas Inc. Monolithic integration of gallium nitride and silicon devices and circuits, structure and method
KR101774933B1 (ko) * 2010-03-02 2017-09-06 삼성전자 주식회사 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법
US20110241020A1 (en) * 2010-03-31 2011-10-06 Triquint Semiconductor, Inc. High electron mobility transistor with recessed barrier layer
CN102576727B (zh) * 2010-06-23 2016-01-27 康奈尔大学 门控iii-v半导体结构和方法
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
JP5654884B2 (ja) * 2011-01-26 2015-01-14 株式会社東芝 窒化物半導体装置の製造方法
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8383471B1 (en) * 2011-04-11 2013-02-26 Hrl Laboratories, Llc Self aligned sidewall gate GaN HEMT
WO2013089843A2 (en) * 2011-09-02 2013-06-20 The California Institute Of Technology Photovoltaic semiconductive materials
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
CN103000692A (zh) * 2011-09-14 2013-03-27 鸿富锦精密工业（深圳）有限公司 薄膜晶体管结构及其制造方法
US8697505B2 (en) * 2011-09-15 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor structure
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US20130105817A1 (en) 2011-10-26 2013-05-02 Triquint Semiconductor, Inc. High electron mobility transistor structure and method
US8946771B2 (en) * 2011-11-09 2015-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Gallium nitride semiconductor devices and method making thereof
US8884308B2 (en) * 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9666705B2 (en) * 2012-05-14 2017-05-30 Infineon Technologies Austria Ag Contact structures for compound semiconductor devices
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9076850B2 (en) 2012-07-30 2015-07-07 Samsung Electronics Co., Ltd. High electron mobility transistor
US9076763B2 (en) * 2012-08-13 2015-07-07 Infineon Technologies Austria Ag High breakdown voltage III-nitride device
JP2014045069A (ja) * 2012-08-27 2014-03-13 Toshiba Corp 半導体装置および半導体装置の製造方法
US8900985B2 (en) * 2012-10-15 2014-12-02 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
JP6522521B2 (ja) 2013-02-15 2019-05-29 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
WO2015009514A1 (en) 2013-07-19 2015-01-22 Transphorm Inc. Iii-nitride transistor including a p-type depleting layer
FR3018629B1 (fr) * 2014-03-14 2022-10-28 Ommic Structure semiconductrice formant transistor hemt
CN103928323A (zh) * 2014-03-21 2014-07-16 中国电子科技集团公司第十三研究所 降低hemt器件欧姆接触电阻的方法
CN103903982A (zh) * 2014-03-21 2014-07-02 中国电子科技集团公司第十三研究所 降低hemt器件欧姆接触电阻的方法
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
CN104393038A (zh) * 2014-10-23 2015-03-04 西安电子科技大学 高击穿电压InAlN/AlGaN高电子迁移率晶体管及其制作方法
KR101672396B1 (ko) * 2014-11-25 2016-11-04 (재)한국나노기술원 4원계 질화물 전력반도체소자 및 이의 제조 방법
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
JP6631950B2 (ja) * 2014-12-11 2020-01-15 パナソニックＩｐマネジメント株式会社 窒化物半導体装置および窒化物半導体装置の製造方法
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
CN105845680B (zh) * 2015-01-14 2019-10-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US20170092747A1 (en) * 2015-09-30 2017-03-30 Sumitomo Electric Industries, Ltd. Hemt having heavily doped n-type regions and process of forming the same
CN105552108A (zh) * 2015-12-07 2016-05-04 成都海威华芯科技有限公司 GaN HEMT器件非合金欧姆接触的制作方法
JP6888013B2 (ja) 2016-01-15 2021-06-16 トランスフォーム テクノロジー，インコーポレーテッド ＡＬ（１−ｘ）Ｓｉ（ｘ）Ｏゲート絶縁体を有するエンハンスメントモードＩＩＩ族窒化物デバイス
JP6690320B2 (ja) * 2016-03-11 2020-04-28 住友電気工業株式会社 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法
CN107230625A (zh) * 2016-03-25 2017-10-03 北京大学 氮化镓晶体管及其制造方法
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
CN105789282B (zh) * 2016-04-22 2019-01-25 西安电子科技大学 一种具有部分高掺杂沟道4H-SiC金半场效应管
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
JP6711233B2 (ja) * 2016-10-13 2020-06-17 富士通株式会社 化合物半導体装置、及び化合物半導体装置の製造方法
JP7013710B2 (ja) * 2017-08-07 2022-02-01 住友電気工業株式会社 窒化物半導体トランジスタの製造方法
JP6879177B2 (ja) * 2017-11-24 2021-06-02 住友電気工業株式会社 窒化物半導体素子の製造方法
JP7100241B2 (ja) * 2017-12-20 2022-07-13 富士通株式会社 化合物半導体装置及びその製造方法
JP7024534B2 (ja) * 2018-03-20 2022-02-24 富士通株式会社 半導体装置及びその製造方法
CN108598235B (zh) * 2018-05-09 2019-12-20 芜湖德豪润达光电科技有限公司 GaN基LED结构及其制备方法
TWI714909B (zh) * 2018-11-13 2021-01-01 新唐科技股份有限公司 高電子遷移率電晶體元件及其製造方法
US12034053B2 (en) 2019-05-30 2024-07-09 National Research Council Of Canada Ohmic contacts with direct access pathways to two-dimensional electron sheets
JP7212173B2 (ja) 2019-10-09 2023-01-24 パナソニックＩｐマネジメント株式会社 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法
JP7417070B2 (ja) * 2020-02-06 2024-01-18 富士通株式会社 半導体装置、半導体装置の製造方法及び電子装置
DE102020202053A1 (de) * 2020-02-19 2021-08-19 Robert Bosch Gesellschaft mit beschränkter Haftung Mosfet mit sättigungskontakt und verfahren zum bilden eines mosfet mit sättigungskontakt
GB2594308B (en) * 2020-04-23 2022-06-08 X Fab Dresden Gmbh & Co Kg Semiconductor contact structures
JP7553770B2 (ja) * 2020-05-28 2024-09-19 日亜化学工業株式会社 電界効果トランジスタの製造方法
LT6909B (lt) 2020-09-29 2022-04-25 Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Įgilintų elektronikos elementų formavimo būdas
US11515410B2 (en) 2020-10-30 2022-11-29 Raytheon Company Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
WO2022124868A1 (ko) * 2020-12-11 2022-06-16 경북대학교 산학협력단 고전자이동도 트랜지스터 및 그 제조방법
CN213905363U (zh) * 2020-12-17 2021-08-06 苏州晶湛半导体有限公司 一种增强型半导体器件
CN114695521B (zh) * 2020-12-30 2025-10-31 西安电子科技大学 基于无金工艺的硅基氮化镓高功率射频器件及其制备方法
US12015075B2 (en) * 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
US12446252B2 (en) 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
US12009417B2 (en) * 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance
CN114005866A (zh) * 2021-09-13 2022-02-01 西安电子科技大学广州研究院 GaN高电子迁移率异质结结构及制备方法、二极管、晶体管
CN116110963A (zh) * 2021-11-09 2023-05-12 联华电子股份有限公司 半导体装置以及其制作方法
US12317562B2 (en) 2021-11-16 2025-05-27 Globalfoundries U.S. Inc. High electron mobility transistors having barrier liners and integration schemes
KR102885737B1 (ko) * 2022-09-26 2025-11-13 (재)한국나노기술원 고전자 이동도 트랜지스터의 제조방법 및 이에 의해 제조된 고전자 이동도 트랜지스터
US20250159960A1 (en) * 2023-11-13 2025-05-15 Finwave Semiconductor, Inc. Iii-nitride transistor with high n doping in access region
CN118016531B (zh) * 2024-02-05 2025-05-09 中国科学院苏州纳米技术与纳米仿生研究所 改善含Ga合金化合物选区二次外延表面形貌的方法及应用

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34861A (en) * 1862-04-01 Improved washing-machine
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US4755867A (en) * 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) * 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (en) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Stacked channel heterojunction fet
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) * 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5292501A (en) * 1990-06-25 1994-03-08 Degenhardt Charles R Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining
US5200022A (en) * 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5140386A (en) * 1991-05-09 1992-08-18 Raytheon Company High electron mobility transistor
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
DE69202554T2 (de) * 1991-12-25 1995-10-19 Nippon Electric Co Tunneltransistor und dessen Herstellungsverfahren.
JPH05275463A (ja) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd 半導体装置
JPH05326561A (ja) * 1992-05-22 1993-12-10 Nec Corp 電界効果トランジスタの製造方法
JPH06267991A (ja) * 1993-03-12 1994-09-22 Hitachi Ltd 半導体装置およびその製造方法
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
JP2687897B2 (ja) * 1994-10-13 1997-12-08 日本電気株式会社 電界効果型トランジスタ及びその製造方法
JP3157690B2 (ja) * 1995-01-19 2001-04-16 沖電気工業株式会社 ｐｎ接合素子の製造方法
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
SE9501311D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd Method for producing a semiconductor device having a semiconductor layer of SiC
US6002148A (en) * 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
KR100195269B1 (ko) * 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
JP3700872B2 (ja) * 1995-12-28 2005-09-28 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置およびその製造方法
DE19600116C2 (de) * 1996-01-03 2001-03-15 Siemens Ag Doppelheterostruktur-HEMT
US5698870A (en) * 1996-07-22 1997-12-16 The United States Of America As Represented By The Secretary Of The Air Force High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
JPH1050982A (ja) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH1065213A (ja) * 1996-08-20 1998-03-06 Nichia Chem Ind Ltd 窒化物半導体素子
US6936839B2 (en) * 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
US6533874B1 (en) * 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3372470B2 (ja) * 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (ja) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The 高移動度トランジスタ
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3209270B2 (ja) * 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JP3398613B2 (ja) * 1999-03-15 2003-04-21 富士通カンタムデバイス株式会社 電界効果トランジスタ
US6518637B1 (en) * 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6639255B2 (en) * 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP3393602B2 (ja) * 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP2001230401A (ja) 2000-02-15 2001-08-24 Fuji Film Microdevices Co Ltd 固体撮像装置
JP4667556B2 (ja) * 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP2002016312A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP4022708B2 (ja) 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
US6515316B1 (en) * 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
US6727531B1 (en) * 2000-08-07 2004-04-27 Advanced Technology Materials, Inc. Indium gallium nitride channel high electron mobility transistors, and method of making the same
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3428962B2 (ja) * 2000-12-19 2003-07-22 古河電気工業株式会社 ＧａＮ系高移動度トランジスタ
US6593193B2 (en) * 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6674101B2 (en) * 2001-06-01 2004-01-06 Furukawa Electric Co Ltd GaN-based semiconductor device
US6646293B2 (en) * 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
CA2454269C (en) * 2001-07-24 2015-07-07 Primit Parikh Insulating gate algan/gan hemt
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
WO2003071607A1 (en) * 2002-02-21 2003-08-28 The Furukawa Electric Co., Ltd. GaN FIELD-EFFECT TRANSISTOR
JP3986887B2 (ja) * 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6884704B2 (en) * 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
US6841809B2 (en) * 2003-04-08 2005-01-11 Sensor Electronic Technology, Inc. Heterostructure semiconductor device
JP4746825B2 (ja) 2003-05-15 2011-08-10 富士通株式会社 化合物半導体装置

Similar Documents

Publication Publication Date Title
JP2007538402A5 (enExample)
JP5160225B2 (ja) 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ
US9508807B2 (en) Method of forming high electron mobility transistor
US10707322B2 (en) Semiconductor devices and methods for fabricating the same
US10700189B1 (en) Semiconductor devices and methods for forming the same
TW201709419A (zh) 半導體元件與其製作方法
CN102388441A (zh) 增强型GaN高电子迁移率晶体管器件及其制备方法
TW201301400A (zh) 電晶體元件及其製造方法
CN103000516B (zh) 形成半导体结构的方法
CN111312808A (zh) 半导体装置及其制造方法
US10720506B1 (en) Method of manufacturing gate structure for gallium nitride high electron mobility transistor
TWI676293B (zh) 半導體裝置及其製造方法
US11211331B2 (en) Semiconductor structure having a via and methods of manufacturing the same
TWI673868B (zh) 半導體裝置及其製造方法
CN110875383B (zh) 半导体装置及其制造方法
US12166101B2 (en) High-electron-mobility transistor device and method of manufacturing the same
CN112652660B (zh) 半导体结构及其制造方法
TWI740058B (zh) 半導體裝置及其製造方法
CN112310215B (zh) 增强型高电子迁移率晶体管元件及其制造方法
CN111092118B (zh) 半导体装置及其制造方法
JP5386810B2 (ja) Ｍｉｓ型ｆｅｔ及びその製造方法
CN116110963A (zh) 半导体装置以及其制作方法
US20240243177A1 (en) Semiconductor device and method of manufacturing the semiconductor device
CN110581163B (zh) 半导体装置及其制造方法
KR20250163545A (ko) 반도체 장치