JP7013710B2 - 窒化物半導体トランジスタの製造方法 - Google Patents
窒化物半導体トランジスタの製造方法 Download PDFInfo
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- JP7013710B2 JP7013710B2 JP2017152652A JP2017152652A JP7013710B2 JP 7013710 B2 JP7013710 B2 JP 7013710B2 JP 2017152652 A JP2017152652 A JP 2017152652A JP 2017152652 A JP2017152652 A JP 2017152652A JP 7013710 B2 JP7013710 B2 JP 7013710B2
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 150000004767 nitrides Chemical class 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 230000004888 barrier function Effects 0.000 claims description 37
- 229910002704 AlGaN Inorganic materials 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 22
- 239000012159 carrier gas Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 46
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 239000002019 doping agent Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Description
Claims (8)
- 基板上にGaNチャネル層を成長する工程と、
前記GaNチャネル層上にバリア層を形成する工程と、
前記バリア層上に、Siを含む無機絶縁層であるマスクを形成する工程と、
前記マスクを用いて、前記バリア層の一部、および前記バリア層の当該一部に重なる前記GaNチャネル層の一部をエッチングしてリセスを形成する工程と、
前記マスク上に対し、前記リセス内にコンタクト層を選択成長する工程と、
前記マスク上に形成された残留層をアルカリ系エッチャントによって選択的に除去する工程と、
前記マスクを除去する工程と、
を備え、
前記コンタクト層は、キャリアガスを窒素とし、成長温度を1000℃以下とした条件にて選択成長するn型GaN系窒化物半導体層である、
窒化物半導体トランジスタの製造方法。 - Ga原料ガスをトリエチルガリウムとした条件にて、前記n型GaN系窒化物半導体層を選択成長する、請求項1に記載の窒化物半導体トランジスタの製造方法。
- 前記n型GaN系窒化物半導体層は、n型AlGaN層であり、
前記n型AlGaN層のAl組成は、10%以下である、請求項1又は2に記載の窒化物半導体トランジスタの製造方法。 - 前記n型AlGaN層は、Siを含み、
前記Siの濃度は、5×1019cm-3以上5×1020cm-3以下である、請求項3に記載の窒化物半導体トランジスタの製造方法。 - 前記バリア層は、Inを含み、
前記コンタクト層は、成長温度を800℃以下とした条件にて選択成長する、請求項1~4のいずれか一項に記載の窒化物半導体トランジスタの製造方法。 - 前記コンタクト層は、単結晶層を含み、
前記残留層は、多結晶構造を含む、請求項1~5のいずれか一項に記載の窒化物半導体トランジスタの製造方法。 - 前記アルカリ系エッチャントは、水酸基を有する化合物を含むエッチャントである、請求項1~6のいずれか一項に記載の窒化物半導体トランジスタの製造方法。
- 前記アルカリ系エッチャントは、水酸化アンモニウム(NH4OH)と、過酸化水素(H2O2)と、水(H2O)との混合液であり、
NH4OH:H2O2:H2O=1:1:60である、請求項1~7のいずれか一項に記載の窒化物半導体トランジスタの製造方法。
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JP2017152652A JP7013710B2 (ja) | 2017-08-07 | 2017-08-07 | 窒化物半導体トランジスタの製造方法 |
US16/056,127 US10622470B2 (en) | 2017-08-07 | 2018-08-06 | Process of forming nitride semiconductor device |
CN201810889982.2A CN109390212B (zh) | 2017-08-07 | 2018-08-07 | 氮化物半导体器件的形成工艺 |
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US10741682B2 (en) | 2016-11-17 | 2020-08-11 | Semiconductor Components Industries, Llc | High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance |
JP6977449B2 (ja) * | 2017-09-27 | 2021-12-08 | 住友電気工業株式会社 | 電界効果トランジスタの製造方法及び電界効果トランジスタ |
JP6879177B2 (ja) * | 2017-11-24 | 2021-06-02 | 住友電気工業株式会社 | 窒化物半導体素子の製造方法 |
CN110660780A (zh) * | 2019-09-19 | 2020-01-07 | 大同新成新材料股份有限公司 | 一种形成氮化物半导体器件的工艺 |
CN111834454A (zh) * | 2020-06-08 | 2020-10-27 | 西安电子科技大学 | 一种具有自对准源漏电极的氮化镓晶体管及其制备方法 |
US11569224B2 (en) * | 2020-12-14 | 2023-01-31 | Vanguard International Semiconductor Corporation | Semiconductor device and operation circuit |
WO2024095458A1 (ja) * | 2022-11-04 | 2024-05-10 | 日本電信電話株式会社 | 半導体装置の製造方法 |
JP2024076261A (ja) * | 2022-11-24 | 2024-06-05 | 株式会社ジャパンディスプレイ | 表示装置 |
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JP2007538402A (ja) | 2004-05-20 | 2007-12-27 | クリー インコーポレイテッド | 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ |
JP2017514316A (ja) | 2014-03-14 | 2017-06-01 | オーエムエムイシー | ヘテロ接合電界効果トランジスタ |
JP2016115931A (ja) | 2014-12-11 | 2016-06-23 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
JP2017059671A (ja) | 2015-09-16 | 2017-03-23 | 住友電気工業株式会社 | 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法 |
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