JP5957994B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5957994B2 JP5957994B2 JP2012061259A JP2012061259A JP5957994B2 JP 5957994 B2 JP5957994 B2 JP 5957994B2 JP 2012061259 A JP2012061259 A JP 2012061259A JP 2012061259 A JP2012061259 A JP 2012061259A JP 5957994 B2 JP5957994 B2 JP 5957994B2
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- insulating film
- aluminum oxide
- semiconductor device
- layer
- hemt
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- 239000004065 semiconductor Substances 0.000 title claims description 246
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 claims description 159
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 128
- 230000003647 oxidation Effects 0.000 claims description 123
- 238000007254 oxidation reaction Methods 0.000 claims description 123
- 150000004767 nitrides Chemical class 0.000 claims description 75
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 61
- 239000001301 oxygen Substances 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 26
- 238000000231 atomic layer deposition Methods 0.000 description 25
- 230000015556 catabolic process Effects 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 18
- 238000000137 annealing Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910005535 GaOx Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
(ALD法により成膜した酸化アルミニウム膜の特性)
ところで、ALD法により酸化アルミニウム(Al2O3)膜を成膜する方法としては2つの方法がある。1つは、原料ガスとしてトリメチルアルミニウム(Al(CH3)3)とH2Oとを用いて成膜する水蒸気酸化方式であり、もう一つは、原料ガスとしてAl(CH3)3とO2とを用いて成膜する酸素プラズマ酸化方式である。尚、ALD法において、水蒸気酸化方式ではプラズマを発生させることなく成膜を行なうものであるが、酸素プラズマ酸化方式では、酸素やオゾンによりプラズマを発生させて成膜を行なうものである。
次に、ALD法により成膜された酸化アルミニウムにおける水酸化アルミニウムの濃度について説明する。蒸気酸化方式及び酸素プラズマ酸化方式により成膜された酸化アルミニウム膜は、ともに成膜直後においては、水酸化アルミニウム(Al(OH)x)が残留している。しかしながら、成膜後のアニール(Post Deposition Anneal:PDA)により、水酸化アルミニウムの残留濃度を低下させることができ、具体的には、水酸化アルミニウムの残留濃度を2%以下に低減することができることが知見として得られている。
次に、第1の実施の形態における半導体装置であるHEMTについて、図7に基づき説明する。本実施の形態における半導体装置であるHEMTは、基板10の上に、窒化物半導体層として、GaNにより形成された電子走行層21、AlGaNにより形成された電子供給層22、GaNにより形成されたキャップ層23が積層形成されている。これにより、電子走行層21と電子供給層22との界面近傍における電子走行層21には、2DEG21aが形成される。本実施の形態においては、電子走行層21を第1の半導体層と、電子供給層22を第2の半導体層と、キャップ層23を第3の半導体層と記載する場合がある。
次に、本実施の形態における半導体装置の製造方法について、図8〜図9に基づき説明する。
図10〜図13は、図1(a)に示される構造のHEMT、図1(b)に示される構造のHEMT及び本実施の形態における半導体装置であるHEMTにおける諸特性を示す。尚、図10〜図13においては、本実施の形態における半導体装置であるHEMTを7Aに示す。また、前述したように、図1(a)に示される酸素プラズマ酸化方式により成膜された酸化アルミニウム膜931を用いたHEMTを1Aに示し、図1(b)に示される水蒸気酸化方式により成膜された酸化アルミニウム膜932を用いたHEMTを1Bに示す。
次に、第2の実施の形態について説明する。本実施の形態はゲートリセス構造を有する半導体装置である。
最初に、第1の実施の形態において記載したものとは異なる構造のゲートリセスが形成された構造の半導体装置を作製した。具体的には、図14に示すように、ゲートリセスを形成したものに、ゲート絶縁膜に水蒸気酸化方式により成膜した酸化アルミニウム膜を用いた半導体装置と、酸素プラズマ酸化方式により成膜した酸化アルミニウム膜を用いた半導体装置とを作製した。
次に、第2の実施の形態における半導体装置であるHEMTについて、図19に基づき説明する。本実施の形態における半導体装置であるHEMTは、基板10の上に、窒化物半導体層として、GaNにより形成された電子走行層21、AlGaNにより形成された電子供給層22、GaNにより形成されたキャップ層23が積層形成されている。これにより、電子走行層21と電子供給層22との界面近傍における電子走行層21には、2DEG21aが形成される。本実施の形態においては、電子走行層21を第1の半導体層と、電子供給層22を第2の半導体層と、キャップ層23を第3の半導体層と記載する場合がある。
次に、本実施の形態における半導体装置の製造方法について、図20〜図22に基づき説明する。
図23〜図26は、図14(a)に示される構造のHEMT、図14(b)に示される構造のHEMT及び本実施の形態における半導体装置であるHEMTにおける諸特性を示す。尚、図23〜図26においては、本実施の形態における半導体装置であるHEMTを19Aに示す。また、前述したように図14(a)に示される酸素プラズマ酸化方式により成膜された酸化アルミニウム膜931を用いたHEMTを14Aに示し、図14(b)に示される水蒸気酸化方式により成膜された酸化アルミニウム膜932を用いたHEMTを14Bに示す。
次に、第3の実施の形態について説明する。本実施の形態は、半導体デバイス、電源装置及び高周波増幅器である。
図27に示されるものは、第1または第2の実施の形態における半導体装置をディスクリートパッケージしたものである。
次に、本実施の形態におけるPFC回路、電源装置及び高周波増幅器について説明する。本実施の形態におけるPFC回路、電源装置及び高周波増幅器は、第1または第2の実施の形態におけるいずれかの半導体装置を用いた電源装置及び高周波増幅器である。
次に、本実施の形態におけるPFC(Power Factor Correction)回路について説明する。本実施の形態におけるPFC回路は、第1または第2の実施の形態における半導体装置を有するものである。
次に、本実施の形態における電源装置について説明する。本実施の形態における電源装置は、第1または第2の実施の形態における半導体装置であるHEMTを有する電源装置である。
次に、本実施の形態における高周波増幅器について説明する。本実施の形態における高周波増幅器は、第1または第2の実施の形態における半導体装置であるHEMTが用いられている構造のものである。
(付記1)
基板の上に、窒化物半導体層を形成する工程と、
前記窒化物半導体層の上に、H2Oを含む原料ガスを用いて水蒸気酸化によるALD法またはO3を含む原料ガスを用いた酸化によるALD法により第1の絶縁膜を形成する工程と、
前記第1の絶縁膜の上に、O2を含む原料ガスを用いて酸素プラズマ酸化によるALD法により第2の絶縁膜を形成する工程と、
前記第2の絶縁膜の上に、ゲート電極を形成する工程と、
前記窒化物半導体層の上に、ソース電極及びドレイン電極を形成する工程と、
を有し、
前記窒化物半導体層は、基板の上に形成された第1の半導体層と、前記第1の半導体層の上に形成された第2の半導体層とを含むものであることを特徴とする半導体装置の製造方法。
(付記2)
前記窒化物半導体層は、前記第2の半導体層の上に形成された第3の半導体層を含むものであることを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)
前記窒化物半導体層を形成する工程の後であって、前記第1の絶縁膜を形成する工程の前に、
前記ゲート電極が形成される領域において、窒化物半導体層の一部を除去することにより、リセスを形成する工程を有するものであることを特徴とする付記1または2に記載の半導体装置の製造方法。
(付記4)
前記第1の絶縁膜と前記第2の絶縁膜は、ともに酸化アルミニウムにより形成されているものであることを特徴とする付記1から3のいずれかに記載の半導体装置の製造方法。
(付記5)
前記第1の絶縁膜を形成する工程において、前記第1の絶縁膜は、原料ガスとして、トリメチルアルミニウムとH2Oとを用いて水蒸気酸化によるALD法により形成されるものであることを特徴とする付記4に記載の半導体装置の製造方法。
(付記6)
前記第2の絶縁膜を形成する工程において、前記第2の絶縁膜は、原料ガスとして、トリメチルアルミニウムとO2またはオゾンを用いて酸素プラズマ酸化によるALD法により形成されるものであることを特徴とする付記4または5に記載の半導体装置の製造方法。
(付記7)
前記第2の絶縁膜を形成する工程の後、700℃以上、800℃以下の温度で熱処理を行なう熱処理工程を有することを特徴とする付記1から6のいずれかに記載の半導体装置の製造方法。
(付記8)
基板の上に形成された窒化物半導体層と、
前記窒化物半導体層の上に形成された絶縁膜と、
前記絶縁膜の上に形成されたゲート電極と、
前記窒化物半導体層と接して形成されたソース電極及びドレイン電極と、
を有し、
前記窒化物半導体層は、基板の上に形成された第1の半導体層と、前記第1の半導体層の上に形成された第2の半導体層と、を含むものであって、
前記絶縁膜は、ALD法により成膜されたものであって、前記第2の半導体層の側より、第1の絶縁膜、第2の絶縁膜が順次積層されたものであって、
前記第1の絶縁膜の密度よりも、前記第2の絶縁膜の密度が高いものであることを特徴とする半導体装置。
(付記9)
前記第1の絶縁膜は、H2Oを含む原料ガスを用いて水蒸気酸化により形成されたものであって、
前記第2の絶縁膜は、O2を含む原料ガスを用いて酸素プラズマ酸化により形成されたものまたはO3を含む原料ガスを用いた酸化により形成されたものであることを特徴とする付記8に記載の半導体装置。
(付記10)
基板の上に形成された窒化物半導体層と、
前記窒化物半導体層の上に形成された絶縁膜と、
前記絶縁膜の上に形成されたゲート電極と、
前記窒化物半導体層と接して形成されたソース電極及びドレイン電極と、
を有し、
前記窒化物半導体層は、基板の上に形成された第1の半導体層と、前記第1の半導体層の上に形成された第2の半導体層と、を含むものであって、
前記窒化物半導体層における前記窒化物半導体層と前記絶縁膜との界面近傍には、前記窒化物半導体に含まれる金属原子に対する酸素原子の割合が、0.4以下であることを特徴とする半導体装置。
(付記11)
前記絶縁膜は、アルミニウム、ハフニウム、シリコン、ニッケルにおける酸化物、窒化物、酸窒化物のうち、1または2以上が含まれるものであることを特徴とする付記10に記載の半導体装置。
(付記12)
前記絶縁膜は、酸化アルミニウムであることを特徴とする付記8から11のいずれかに記載の半導体装置。
(付記13)
前記絶縁膜に含まれる水酸化アルミニウムの濃度は、4%以下であることを特徴とする付記12に記載の半導体装置。
(付記14)
前記窒化物半導体層は、前記第2の半導体層の上に形成された第3の半導体層を含むものであることを特徴とする付記8から13のいずれかに記載の半導体装置。
(付記15)
前記第3の半導体層は、GaNを含む材料により形成されているものであることを特徴とする付記14に記載の半導体装置。
(付記16)
前記第1の半導体層は、GaNを含む材料により形成されているものであることを特徴とする付記8から15のいずれかに記載の半導体装置。
(付記17)
前記第2の半導体層は、AlGaNを含む材料により形成されているものであることを特徴とする付記8から16のいずれかに記載の半導体装置。
(付記18)
前記半導体装置はHEMTを含むものであることを特徴とする付記8から17のいずれかに記載の半導体装置。
(付記19)
付記8から18のいずれかに記載の半導体装置を有することを特徴とする電源装置。
(付記20)
付記8から18のいずれかに記載の半導体装置を有することを特徴とする増幅器。
21 電子走行層(第1の半導体層)
21a 2DEG
22 電子供給層(第2の半導体層)
23 キャップ層(第3の半導体層)
30 絶縁膜
31 第1の絶縁膜
32 第2の絶縁膜
41 ゲート電極
42 ソース電極
43 ドレイン電極
Claims (5)
- 基板の上に、窒化物半導体層を形成する工程と、
前記窒化物半導体層の上に、H2Oを含む原料ガスを用いて水蒸気酸化によるALD法により第1の絶縁膜を形成する工程と、
前記第1の絶縁膜の上に、O2を含む原料ガスを用いて酸素プラズマ酸化によるALD法またはO3を含む原料ガスを用いた酸化によるALD法により第2の絶縁膜を形成する工程と、
前記第2の絶縁膜の上に、ゲート電極を形成する工程と、
前記窒化物半導体層の上に、ソース電極及びドレイン電極を形成する工程と、
を有し、
前記窒化物半導体層は、基板の上に形成された第1の半導体層と、前記第1の半導体層の上に形成された第2の半導体層とを含むものであることを特徴とする半導体装置の製造方法。 - 前記窒化物半導体層は、前記第2の半導体層の上に形成された第3の半導体層を含むものであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記窒化物半導体層を形成する工程の後であって、前記第1の絶縁膜を形成する工程の前に、
前記ゲート電極が形成される領域において、窒化物半導体層の一部を除去することにより、リセスを形成する工程を有するものであることを特徴とする請求項1または2に記載の半導体装置の製造方法。 - 前記第1の絶縁膜と前記第2の絶縁膜は、ともに酸化アルミニウムにより形成されているものであることを特徴とする請求項1から3のいずれかに記載の半導体装置の製造方法。
- 前記第2の絶縁膜を形成する工程の後、700℃以上、800℃以下の温度で熱処理を行なう熱処理工程を有することを特徴とする請求項1から4のいずれかに記載の半導体装置の製造方法。
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