TW200539264A - Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions - Google Patents
Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions Download PDFInfo
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- TW200539264A TW200539264A TW094107182A TW94107182A TW200539264A TW 200539264 A TW200539264 A TW 200539264A TW 094107182 A TW094107182 A TW 094107182A TW 94107182 A TW94107182 A TW 94107182A TW 200539264 A TW200539264 A TW 200539264A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 title claims abstract description 82
- 230000004888 barrier function Effects 0.000 claims abstract description 114
- 239000000463 material Substances 0.000 claims abstract description 89
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 29
- 238000005137 deposition process Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims description 22
- 230000000873 masking effect Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- -1 nitride nitride Chemical class 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
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- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 150000004678 hydrides Chemical class 0.000 claims 1
- 239000006251 one-dimensional electron gas Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 336
- 229910002601 GaN Inorganic materials 0.000 description 23
- 238000005530 etching Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
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- 230000015556 catabolic process Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/849,617 US7432142B2 (en) | 2004-05-20 | 2004-05-20 | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200539264A true TW200539264A (en) | 2005-12-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094107182A TW200539264A (en) | 2004-05-20 | 2005-03-09 | Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7432142B2 (enExample) |
| EP (1) | EP1747589B1 (enExample) |
| JP (1) | JP5160225B2 (enExample) |
| KR (1) | KR20070032701A (enExample) |
| CN (1) | CN1998085B (enExample) |
| CA (1) | CA2567066A1 (enExample) |
| TW (1) | TW200539264A (enExample) |
| WO (1) | WO2005119787A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968895B2 (en) | 2007-05-30 | 2011-06-28 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
| US12040367B2 (en) | 2019-05-30 | 2024-07-16 | National Research Council Of Canada | Ohmic contacts with direct access pathways to two-dimensional electron sheets |
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| US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
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| JP4889203B2 (ja) * | 2004-04-21 | 2012-03-07 | 新日本無線株式会社 | 窒化物半導体装置及びその製造方法 |
| US7846757B2 (en) * | 2005-06-01 | 2010-12-07 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices |
| US7709284B2 (en) * | 2006-08-16 | 2010-05-04 | The Regents Of The University Of California | Method for deposition of magnesium doped (Al, In, Ga, B)N layers |
| US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
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| US7338826B2 (en) * | 2005-12-09 | 2008-03-04 | The United States Of America As Represented By The Secretary Of The Navy | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs |
| JP5896442B2 (ja) * | 2006-01-20 | 2016-03-30 | 国立研究開発法人科学技術振興機構 | Ｉｉｉ族窒化物膜の成長方法 |
| KR20080098039A (ko) * | 2006-01-20 | 2008-11-06 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 금속유기 화학 기상 증착을 통한 준극성 (Ａｌ,Ｉｎ,Ｇａ,Ｂ)Ｎ의 성장을 향상시키기 위한 방법 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968895B2 (en) | 2007-05-30 | 2011-06-28 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
| US8101951B2 (en) | 2007-05-30 | 2012-01-24 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
| US8445339B2 (en) | 2007-05-30 | 2013-05-21 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
| US12040367B2 (en) | 2019-05-30 | 2024-07-16 | National Research Council Of Canada | Ohmic contacts with direct access pathways to two-dimensional electron sheets |
| TWI874396B (zh) * | 2019-05-30 | 2025-03-01 | 加拿大國家研究委員會 | 歐姆接觸結構、製造歐姆接觸結構的方法以及高電子移動率電晶體 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1998085B (zh) | 2012-08-08 |
| US20050258451A1 (en) | 2005-11-24 |
| CA2567066A1 (en) | 2005-12-15 |
| EP1747589B1 (en) | 2014-03-26 |
| JP5160225B2 (ja) | 2013-03-13 |
| WO2005119787A1 (en) | 2005-12-15 |
| US7432142B2 (en) | 2008-10-07 |
| EP1747589A1 (en) | 2007-01-31 |
| JP2007538402A (ja) | 2007-12-27 |
| KR20070032701A (ko) | 2007-03-22 |
| CN1998085A (zh) | 2007-07-11 |
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