WO2005119787A1 - Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions - Google Patents

Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions Download PDF

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Publication number
WO2005119787A1
WO2005119787A1 PCT/US2005/004039 US2005004039W WO2005119787A1 WO 2005119787 A1 WO2005119787 A1 WO 2005119787A1 US 2005004039 W US2005004039 W US 2005004039W WO 2005119787 A1 WO2005119787 A1 WO 2005119787A1
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Prior art keywords
contact
layer
forming
nitride
channel layer
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English (en)
French (fr)
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Adam William Saxler
Richard Peter Smith
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Wolfspeed Inc
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Cree Inc
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Priority to CA002567066A priority Critical patent/CA2567066A1/en
Priority to CN2005800245027A priority patent/CN1998085B/zh
Priority to KR1020067026779A priority patent/KR20070032701A/ko
Priority to EP05722846.2A priority patent/EP1747589B1/en
Priority to JP2007527194A priority patent/JP5160225B2/ja
Publication of WO2005119787A1 publication Critical patent/WO2005119787A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Definitions

  • the present invention relates to semiconductor devices and, more particularly, to transistors that incorporate nitride-based active layers.
  • the present invention relates to transistors formed of semiconductor materials that can make them suitable for high power, high temperature, and/or high frequency applications.
  • Materials such as silicon (Si) and gallium arsenide (GaAs) have found wide application in semiconductor devices for lower power and (in the case of Si) lower frequency applications.
  • Si silicon
  • GaAs gallium arsenide
  • These, more familiar, semiconductor materials may not be well suited for higher power and/or high frequency applications, however, because of their relatively small bandgaps (e.g., 1.12 eV for Si and 1.42 for GaAs at room temperature) and/or relatively small breakdown voltages.
  • HEMT High Electron Mobility Transistor
  • MODFET modulation doped field effect transistor
  • a two-dimensional electron gas (2DEG) is formed at the heteroj unction of two semiconductor materials with different bandgap energies, and where the smaller bandgap material has a higher electron affinity.
  • the 2DEG is an accumulation layer in the undoped ("unintentionally doped"), smaller bandgap material and can contain a very high sheet electron concentration in excess of, for example, 10 carriers/cm . Additionally, electrons that originate in the wider-bandgap semiconductor transfer to the 2DEG, allowing a high electron mobility due to reduced ionized impurity scattering.
  • High electron mobility transistors fabricated in the gallium nitride/aluminum gallium nitride (GaN/AlGaN) material system have the potential to generate large amounts of RF power because of the combination of material characteristics that includes the aforementioned high breakdown fields, their wide bandgaps, large conduction band offset, and/or high saturated electron drift velocity.
  • a major portion of the electrons in the 2DEG is attributed to polarization in the AlGaN.
  • U.S. Patents 5,192,987 and 5,296,395 describe AlGaN/GaN HEMT structures and methods of manufacture.
  • U.S. Patent No. 6,316,793, to Sheppard et al. which is commonly assigned and is incorporated herein by reference, describes a HEMT device having a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an aluminum gallium nitride barrier layer on the gallium nitride layer, and a passivation layer on the aluminum gallium nitride active structure.
  • ohmic contacts for such transistors.
  • ohmic contacts have been formed through reactive ion etching (RIE) recesses for the contacts.
  • RIE reactive ion etching
  • Ohmic contacts that are formed without RIE have, typically, used high annealing temperatures (e.g. 900 °C). Such high annealing temperatures may damage the materials and/or the device.
  • Some embodiments of the present invention provide for fabrication of a transistor including forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer and forming a contact layer on the exposed contact region of the nitride-based channel layer using a low temperature deposition process. Fabrication may also include forming an ohmic contact on the contact layer and forming a gate contact disposed on the barrier layer adjacent the ohmic contact.
  • forming a contact layer on the exposed contact region of the nitride-based channel layer using a low temperature deposition process includes forming a contact layer by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), plasma enchanced chemical vapor deposition (PECVD), sputtering and/or hydride vapor phase epitaxy (HVPE).
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • PECVD plasma enchanced chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • fabrication of the transistor further includes forming a first dielectric layer on the barrier layer and forming a recess in the first dielectric layer.
  • Forming a gate contact includes forming a gate contact in the recess.
  • Forming a contact recess includes forming a contact recess in the first dielectric layer and the barrier layer that exposes a portion of the nitride-based channel layer.
  • the gate contact may be formed on the first dielectric layer.
  • the first dielectric layer comprises a silicon nitride layer.
  • the silicon nitride layer may provide a passivation layer for the transistor.
  • the contact recess extends into the channel layer.
  • forming an ohmic contact may include forming an ohmic contact without annealing the ohmic contact.
  • Forming an ohmic contact could include patterning a metal layer on the contact layer and annealing the patterned metal layer at a temperature of about 850 °C or less.
  • forming a contact layer on the exposed portions of the nitride-based channel layer includes forming a contact layer on the exposed portion of the nitride-based channel layer to a thickness sufficient to provide a sheet resistivity of less than a sheet resistivity of a two-dimensional electron gas region formed at an interface between the channel layer and the barrier layer.
  • Forming a contact layer may include forming n-type an InGaN, AlInN, AlInGaN and/or InN layer.
  • the n-type nitride- based layer formed is GaN and/or AlGaN.
  • the InGaN, GaN, AlGaN, AlInN, AlInGaN and/or InN layer may be doped with Si, Ge and/or O during formation.
  • the contact layer includes an n- type degenerate semiconductor material other than GaN and AlGaN.
  • the contact layer may include a non-nitride Group III-V semiconductor material, a Group IV semiconductor material and/or a group II- VI semiconductor material.
  • fabrication of the transistor further includes forming sidewalls of the channel layer to provide an increased surface area interface between the channel layer and the n-type contact layer as compared to a planar interface.
  • Forming an ohmic contact on the contact layer may include forming an ohmic contact on the contact layer that extends onto a portion of the channel layer or that terminates before the sidewall of the channel layer.
  • fabrication of the transistor includes forming holes in the channel layer adjacent the contact regions and placing n-type nitride-based semiconductor material in the holes. Forming an ohmic contact on the contact layer further includes forming an ohmic contact on the contact layer and on the nitride-based semiconductor material in the holes.
  • fabricating a transistor includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a masking layer on the barrier layer, patterning the masking layer and the barrier layer to provide contact opening that exposes a portion of the nitride-based channel layer, forming a contact layer on the exposed portion of the nitride-based channel layer and the masking layer, selectively removing the masking layer and a portion of the contact layer on the masking layer to provide a contact region, forming an ohmic contact on the contact region and forming a gate contact disposed on the barrier layer adjacent the ohmic contact.
  • Fabrication of the transistor may also include forming a first dielectric layer on the barrier layer and forming a recess in the first dielectric layer.
  • Forming a gate contact may include forming a gate contact in the recess.
  • Forming a masking layer on the barrier layer may include forming a masking layer on the first dielectric layer.
  • Patterning the masking layer and the barrier layer to provide contact openings that expose a portion of the nitride-based channel layer may include patterning the masking layer, the first dielectric layer and the barrier layer to provide contact opening that exposes a portion of the nitride-based channel layer.
  • the first dielectric layer includes a silicon nitride layer.
  • the silicon nitride layer may provide a passivation layer for the transistor.
  • the masking layer may be a dielectric layer.
  • the dielectric layer may be a silicon oxide layer.
  • the masking layer could be a photoresist masking layer.
  • Forming an ohmic contact may be provided by forming an ohmic contact without annealing the ohmic contact. Alternatively, forming an ohmic contact may be provided by patterning a metal layer on the contact region and annealing the patterned metal layer at a temperature of about 850 °C or less.
  • Forming a contact layer on the exposed portion of the nitride-based channel layer and the oxide layer may include forming a contact layer by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), plasma enhanced chemical vapor deposition (PECVD), sputtering and/or hydride vapor phase epitaxy (HVPE).
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • PECVD plasma enhanced chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • Forming a contact layer on the exposed portions of the nitride-based channel layer and the masking layer may be provided by forming a contact layer on the exposed portions of the nitride-based channel layer and the masking layer to a thickness sufficient to provide a sheet resistivity of less than a sheet resistivity of a two-dimensional electron gas region formed at an interface between the channel layer and the barrier layer.
  • Forming a contact layer may include forming an n-type InGaN, AlInGaN, InAIN and/or InN layer.
  • the nitride based contact layer may be GaN and/or AlGaN.
  • the InGaN, AlInGaN, InAIN, GaN, AlGaN and/or InN layer may be doped with Si, Ge and/or O during formation.
  • fabrication of the transistor includes forming sidewalls of the channel layer to provide an increased surface area interface between the channel layer and the n-type contact layer compared to a planar interface.
  • a high electron mobility transistor (HEMT) and methods of fabricating a HEMT are provided.
  • the HEMT includes a nitride-based channel layer on a substrate, a barrier layer on the nitride- based channel layer, a contact recess in the barrier layer that extends into the channel layer, a contact region on the nitride-based channel layer in the contact recess, a gate contact disposed on the barrier layer.
  • the contact region and the nitride-based channel layer include a surface area enlargement structure.
  • the surface area enlargement structure includes patterned sidewalls of portions of the contact recess that extends into the channel layer.
  • an ohmic contact is provided on the contact region that does not extend onto the channel layer in the area of the sidewalls.
  • the ohmic contact extends onto the channel layer in the area of the sidewalls.
  • the surface area enlargement structure includes holes extending into the channel layer with n-type nitride-based semiconductor material in the and the ohmic contact is in contact with the nitride-based semiconductor material in the holes.
  • the n-type nitride-based semiconductor material may include InN, AlGaN,
  • n-type nitride-based semiconductor material may be doped with Si, Ge and/or O.
  • a silicon nitride layer may also be provided on the barrier layer and the gate contact may be provided in a recess in the silicon nitride layer.
  • Further embodiments of the present invention provide a high electron mobility transistor and methods of fabricating a transistor that includes a nitride-based channel layer on a substrate and a barrier layer on the nitride-based channel layer. At least one contact recess is provided in the barrier layer that extends into the channel layer.
  • a region of metal and/or metal alloy is provided on the nitride-based channel layer in the contact recess to provide an ohmic contact.
  • a gate contact disposed is on the barrier layer.
  • the region of metal may extend onto the barrier layer.
  • Additional embodiments of the present invention provide a high electron mobility transistor and methods of fabricating a transistor that includes a nitride-based channel layer on a substrate and a barrier layer on the nitride-based channel layer. At least one contact recess is provided in the barrier layer that extends into the channel layer.
  • a region of n-type degenerate semiconductor material other than GaN or AlGaN is provided on the nitride-based channel layer in the contact recess.
  • An ohmic contact is provided on the region of n-type degenerate semiconductor material and a gate contact is disposed on the barrier layer. The region of n-type degenerate semiconductor material may extend onto the barrier layer.
  • Figures 1A-1G are schematic drawings illustrating fabrication of ohmic contacts in transistors according to embodiments of the present invention.
  • Figure 2 is a schematic illustration of transistors according to further embodiments of the present invention.
  • Figures 3 A and 3B are schematic illustrations of transistors according to further embodiments of the present invention.
  • Figures 4 A-4C are schematic illustrations of fabrication of transistors according to further embodiments of the present invention.
  • DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown.
  • first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
  • relative terms such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as being on the "lower” side of other elements would then be oriented on “upper” sides of the other elements.
  • the exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending of the particular orientation of the figure.
  • elements described as “below” or “beneath” other elements would then be oriented “above” the other elements.
  • the exemplary terms “below” or “beneath” can, therefore, encompass both an orientation of above and below.
  • Embodiments of the present invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected.
  • embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing.
  • an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
  • a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.
  • the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the present invention.
  • Embodiments of the present invention provide ohmic contacts on re-grown contact regions of a Group Ill-nitride based transistor and methods of forming such contacts.
  • Embodiments of the present invention may be suited for use in nitride-based HEMTs such as Group Ill-nitride based devices.
  • Group III nitride refers to those semiconducting compounds formed between nitrogen and the elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and/or indium (In).
  • Al aluminum
  • Ga gallium
  • In indium
  • the term also refers to ternary and quaternary compounds such as AlGaN and AlInGaN.
  • the Group III elements can combine with nitrogen to form binary (e.g. , GaN), ternary (e.g. , AlGaN, AlInN), and quaternary (e.g., AlInGaN) compounds. These compounds all have empirical formulas in which one mole of nitrogen is combined with a total of one mole of the Group III elements. Accordingly, formulas such as Al x Ga ⁇ -x N where 0 ⁇ x ⁇ 1 are often used to describe them. Suitable structures for GaN-based HEMTs that may utilize embodiments of the present invention are described, for example, in commonly assigned U.S. Patent 6,316,793 and U.S. application serial no.
  • LAYER the disclosures of which are hereby incorporated herein by reference in their entirety. Fabrication of embodiments of the present invention is schematically illustrated in Figures 1A-1G.
  • a substrate 10 is provided on which nitride based devices may be formed.
  • the substrate 10 may be a semi-insulating silicon carbide (SiC) substrate that may be, for example, 4H polytype of silicon carbide.
  • SiC silicon carbide
  • Other silicon carbide candidate polytypes include the 3C, 6H, and 15R polytypes.
  • the term "semi- insulating" is used descriptively rather than in an absolute sense.
  • the silicon carbide bulk crystal has a resistivity equal to or higher than about lxl 0 5 ⁇ -cm at room temperature.
  • Optional buffer, nucleation and/or transition layers may be provided on the substrate 10.
  • an AIN buffer layer may be provided to provide an appropriate crystal structure transition between the silicon carbide substrate and the remainder of the device.
  • strain balancing transition layer(s) may also be provided as described, for example, in commonly assigned United States Patent Application Serial No.
  • Silicon carbide has a much closer crystal lattice match to Group III nitrides than does sapphire (Al 2 O ), which is a very common substrate material for Group III nitride devices.
  • Silicon carbide also has a very high thermal conductivity so that the total output power of Group III nitride devices on silicon carbide is, typically, not as limited by thermal dissipation of the substrate as in the case of the same devices formed on sapphire. Also, the availability of semi-insulating silicon carbide substrates may provide for device isolation and reduced parasitic capacitance. Appropriate SiC substrates are manufactured by, for example, Cree, Inc., of Durham, N.C., the assignee of the present invention, and methods for producing are described, for example, in U. S. Patent Nos. Re.
  • an appropriate buffer layer also may be formed.
  • a channel layer 20 is provided on the substrate 10.
  • the channel layer 20 may be deposited on the substrate 10 using buffer layers, transition layers, and/or nucleation layers as described above.
  • the channel layer 20 may be under compressive strain.
  • the channel layer and/or buffer nucleation and/or transition layers may be deposited by MOCVD or by other techniques known to those of skill in the art, such as MBE or HVPE .
  • the channel layer 20 is a Group Ill-nitride, such as Al x Ga ⁇ .
  • x 0, indicating that the channel layer 20 is GaN.
  • the channel layer 20 may also be other Group Ill-nitrides such as InGaN, AlInGaN or the like.
  • the channel layer 20 may be undoped ("unintentionally doped") - and may be grown to a thickness of greater than about 20 A.
  • the channel layer 20 may also be a multi-layer structure, such as a superlattice or combinations of GaN, AlGaN or the like.
  • a barrier layer 22 is provided on the channel layer 20.
  • the channel layer 20 may have a bandgap that is less than the bandgap of the barrier layer 22.
  • the barrier layer 22 may be deposited on the channel layer 20.
  • the barrier layer 22 is AIN, AlInN, AlGaN or AlInGaN with a thickness of between about 1 and about 100 nm.
  • the barrier layer 22 includes multiple layers.
  • the barrier layer 22 may be about lnm of AIN with about 25 nm of AlGaN on the AIN layer. Examples of barrier layers according to certain embodiments of the present invention are described in United States Patent Application Serial No.
  • the barrier layer 22 may be a Group Ill-nitride and has a bandgap larger than that of the channel layer 20. Accordingly, in certain embodiments of the present invention, the barrier layer 22 is AlGaN, AlInGaN and/or AIN or combinations of layers thereof. Other materials may also be used for the barrier layer 22.
  • the barrier layer 22 may, for example, be from about 1 to about 100 nm thick, but is not so thick as to cause cracking or substantial defect formation therein.
  • the barrier layer 22 is undoped or doped with an n-type dopant to a concentration less than about 10 19 cm " 3 .
  • the barrier layer 22 is Al x Ga ⁇ -x N where 0 ⁇ x ⁇ 1.
  • the barrier layer 22 may be from about 3 to about 30 nm thick.
  • the aluminum concentration is about 25%.
  • the barrier layer 22 comprises AlGaN with an aluminum concentration of between about 5% and about 100%. In specific embodiments of the present invention, the aluminum concentration is greater than about 10%. In embodiments of the present invention where the barrier layer 22 comprises an AIN layer, the thickness of the barrier layer 22 may, for example, be from about 0.3 nm to about 4 nm.
  • Figure IB illustrates formation of an optional first dielectric layer 24.
  • the first dielectric layer 24 may be a silicon nitride layer, such as an Si x N y layer.
  • the silicon nitride layer may serve as a passivation layer for the device.
  • the silicon nitride layer may be deposited by, for example, plasma-enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD) and/or sputtering.
  • PECVD plasma-enhanced chemical vapor deposition
  • LPCVD low pressure chemical vapor deposition
  • sputtering The silicon nitride layer may be deposited in the same reactor as other layers of the transistor.
  • other dielectrics may also be utilized, such as, for example, silicon oxynitride and/or silicon dioxide.
  • Figure IC illustrates formation of a mask 30 on the first dielectric layer 24. The mask 30 is formed on the region of the barrier layer 22 where a gate contact will subsequently be formed.
  • the wafer of Figure IC may be removed from the epi reactor and patterned with a mask material 30 to expose the desired recess areas.
  • the mask material 30 should be able to withstand the growth temperature of subsequent processing, including the formation of regrown contact regions 26 as described below.
  • the mask 30 is provided by an oxide.
  • the mask 30 is patterned using lift-off techniques. Alternatively, a wet or dry etch could be utilized to pattern the mask 30.
  • SiO x is the mask material, although other materials, such as AIN and Si x N y based materials, may also be used.
  • a photo-resist, e-beam resist material or organic mask material may also be utilized if it is not unduly damaged by subsequent processing steps, such as deposition temperatures or the like.
  • the recesses are etched through the first dielectric layer 24, through the barrier layer 22, to the channel layer 20 and, in some embodiments, to and into the channel layer 20 or, in some embodiments, even through the channel layer 20.
  • the etch to form the contact recesses 23 may be provided by, for example, a wet etch, a dry etch and/or a reactive ion etch or the like.
  • the structure may be annealed to remove and/or reduce damage resulting from the etch.
  • the periphery of the device may be etched to form a mesa structure (not shown), for example, if other termination structures, such as a field plate, implant or other termination structure are not provided or may be provided in addition to such structures.
  • a contact layer 26' is formed on the exposed regions of the channel layer 20 and the mask 30.
  • the wafer of Figure ID may be put back into the epi reactor for deposition of the contact layer 26'.
  • the contact layer 26' is formed by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), plasma enchanced chemical vapor deposition (PECVD), sputtering and/or hydride vapor phase epitaxy (HVPE).
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • PECVD plasma enchanced chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • the contact layer 26' is regrown at a reduced deposition temperature.
  • a low temperature deposition process may be used.
  • low temperature deposition refers to formation of a layer at a temperature lower than a temperature at which substantial mass transport from the wafer to the regrown region takes place.
  • the contact layer 26' may be formed at a temperature of from about room temperature to about 950 °C.
  • the contact layer 26' is formed at a temperature of less than 960 °C.
  • the contact layer 26' is formed at a very low temperature, for example, at a temperature of less than about 450 °C and in some embodiments, at temperature of less than about 200 °C.
  • Such very low temperature conditions may be used, for example, with sputtering and/or PECVD growth techniques.
  • the use of a reduced deposition temperature and/or low temperature deposition may reduce trapping and/or may provide improved reliability.
  • the contact layer 26' may be unevenly formed such that the portion on the mask 30 is porous or discontinuous. In some embodiments, the contact layer 26' is not formed on the mask 30.
  • the contact layer 26' may be an n-type degenerate semiconductor material.
  • the contact layer 26' may be heavily doped n-type InN, InAIN, AlGaN, AlInGaN, GaN and/or InGaN.
  • the contact layer 26' may be an n-type degenerate semiconductor material other than GaN or AlGaN.
  • the contact layer may be a non-nitride Group III-V semiconductor material, a Group IV semiconductor material and/or a Group II- VI semiconductor material.
  • potential contact layer 26' materials include, for example, ZnO, ZnGeN 2 and/or ZnSnN .
  • the contact layer 26' may be a metal or metal alloy, for example, a metal suicide, capable of conformal deposition at a low temperature that has a low work function and does not form a Schottky contact.
  • the metal may be subsequently etched off in the channel and gate regions.
  • a passivation layer may be deposited before deposition of the metal. Formation of a GaN contact layer 26' may reduce and/or eliminate a band discontinuity with the channel layer 22 if the channel layer 22 is also GaN.
  • the contact layer 26' is formed to a thickness sufficient to provide a low sheet resistivity.
  • the contact layer 26' may be grown to a thickness sufficient to provide a sheet resistivity that is less than a sheet resistivity of the 2DEG formed at the interface between the channel layer 20 and the barrier layer 22.
  • Several tens of nanometers of GaN, for example, may be sufficient thickness for the contact layer 26', however, a thicker layer may have a lower resistances and increase transfer length (L T ).
  • the contact layer 26' may be doped with Si, Ge and/or O or other suitable n-type dopant or may be naturally n-type as deposited.
  • the contact layer 26' may be doped as formed rather than through subsequent ion implantation. Formation of the doped contact layer 26' without ion implantation may avoid the need for extremely high temperature annealing to activate the dopants.
  • the contact layer 26' has a sheet resistivity of from about 10 to about 400 ⁇ /D.
  • the contact layer is doped to provide a carrier concentration of from about 10 18 to about 10 21 cm "3 .
  • the contact layer 26' is from about 10 nm to about 1000 nm thick.
  • the mask 30 may not be needed as the material could be blanket deposited and then patterned and etched after deposition.
  • Figure IF illustrates removal of the portion of the contact layer 26' formed on the mask 30 and removal of the mask 30 to expose the first dielectric layer 24, thus providing the contact regions 26.
  • the mask 30 and the portion of the contact layer 26' may be removed, for example, by etching the mask 30 in buffered HF or other etchant that will remove the mask layer 30 and leave the first dielectric layer 24 and the contact regions 26.
  • the portion of the contact layer 26' is formed on the mask 30 may be formed so as to be porous or discontinuous so as to allow etching the mask 30 through the contact layer 26'.
  • the mask 30 may be etched with an etchant that has etching selectivity with respect to the contact layer 26' and the first dielectric layer 24.
  • the mask layer 30 may be etched from the sides to remove the mask layer and the portion of the contact layer 26' on the mask layer 30, for example, if the portion of the contact layer 26' on the mask layer is not porous or is continuous.
  • Figure IG illustrates formation of a gate recess in the first dielectric layer 24 and formation of a gate contact 44 on the exposed portion of the barrier layer 22 in the gate recess.
  • a gate recess may be etched through the first dielectric layer 24 using, for example, a dry etch, a wet etch and/or RIE or the like.
  • the structure may be annealed to repair some or all of the damage resulting from the etch of the gate recess.
  • Suitable gate contact materials include, for example, Ni, Pt, Pd or other such Schottky contact materials. Additional overlayers may also be provided.
  • the gate contact 44 may be formed on the dielectric layer 24.
  • ohmic contacts 40 and 42 are formed on the contact regions 26 and may provide source and drain contacts.
  • the ohmic contacts 40 and 42 may be formed before or after formation of the gate recess and/or contact 44.
  • the ohmic contacts 40 and 42 are annealed, for example at a temperature of about 850 °C or less. In other embodiments, the anneal of the ohmic contacts is not carried out. The use of a reduced anneal temperature or no anneal may reduce trapping and/or may provided improved reliability.
  • the presence of the highly doped n-type contact regions may lower contact resistance that may provide for increased efficiency and/or radio frequency power density.
  • Suitable ohmic contact materials include, for example, a Ti/Al/Ni/Au stack may be used. Similarly, a structure of Ti/Al/X/Au may be used where X may be Mo, Pt and/or Ti. While embodiments of the present invention have been described with reference to a blanket deposition of the contact layer 26', alternatively, selective regrowth of the contact regions 26 could also be utilized while still benefiting from the teachings of the present invention. Furthermore, the regrown contact regions 26 may be provided for only one of the ohmic contacts 40 and 42 and a conventional contact structure provided for the other contact. Accordingly, embodiments of the present invention should not be construed as limited to the specific processing steps illustrated in Figures 1A-1G.
  • FIGS. 2, 3 A and 3B are illustrations of embodiments of the present invention incorporating contact area enlargement structures that provide increased vertical surface area of the interface between the contact region 26 and the channel layer 20.
  • Figure 2 illustrates embodiments of the present invention as incorporating a contact area enlargement area structure in a sidewall of a portion of the channel layer 20 and Figures 3A and 3B illustrate embodiments of the present invention where the contact enlargement area structure is provided by filled holes extending into the contact layer 20. While each of the contact area enlargement structures is described herein separately, the contact area enlargement structures may also be provided in combination with each other or other structures that increase the vertical contact area between the channel layer 20 and the contact region 26 as compared to a planar vertical contact area. Such structures may provide means for increasing a surface area of an interface between a vertical portion of the n-type nitride-based semiconductor material contact region 26 and the nitride-based channel layer 20.
  • Figures 2, 3 A and 3B illustrate a partial section of a transistor illustrating a single ohmic contact region.
  • a corresponding section may be provided for a second ohmic contact region opposite the gate contact so as to provide source and drain contacts.
  • embodiments of the present invention may provide a contact area enlargement structure for only one of the ohmic contacts.
  • Figure 2 is a top view of a portion of a HEMT according to further embodiments of the present invention.
  • the surface area of the interface between the contact region 26 and the channel layer 20 and/or the barrier layer 22 may be increased by providing an increased surface area sidewall 200 of the channel layer 20 and/or the barrier layer 22.
  • the increased surface area sidewall 200 has an increased surface area with respect to a straight sidewall. Increasing the surface area of the interface between the contact region 26 and the channel layer 20 may reduce the resistance between the contact region 26 and the channel layer 20.
  • the patterned sidewall 200 may be provided by patterning the channel layer 20 during the contact recess etch described above. For example, a first etch through the first dielectric layer 24 and the barrier layer 22 may be performed and then a second etch into the channel layer 22 may be performed with a mask on the exposed portion of the channel layer 20 to provide the pattern of the sidewall. Alternatively, a single etch may be performed if the mask 30 has a pattern corresponding to the desired sidewall pattern of the channel layer 20.
  • the sidewall may have a regular or irregular repeating or non-repeating shape.
  • the sawtooth shape illustrated in Figure 2 is provided as an example of a shape that may be used. However, other shapes may also be used, for example, a notch shape, a series of curves or the like may be used. Accordingly, some embodiments of the present invention should not be limited to a particular shape for the increased surface . area sidewall 200.
  • the ohmic contact metal 42' is also illustrated in Figure 2 on the contact region 26. The contact metal 42' is illustrated as stopping before the periphery of the contact region 26. However, the contact metal 42' may extend further than illustrated and may, for example, extend onto the channel layer 22.
  • Figure 3A is a top view and Figure 3B is a cross-section taken along the lines I-I' of Figure 3 A of further embodiments of the present invention.
  • the surface area of the interface between the regrown contact region 26 and the channel layer 20 may be increased by providing holes 300 that extend into the channel layer 20.
  • the holes 300 have n-type material in them as provided in the contact region 26.
  • the ohmic contact 42" extends to cover the holes 300 so that the n-type material in the holes 300 is electrically connected to the contact region 26.
  • the filled holes 300 may be provided by patterning the channel layer 20 during the contact recess etch described above so as to provide holes that are present when the contact layer 26' is formed.
  • a first etch through the first dielectric layer 24 and the barrier layer 22 may be performed and then a second etch into the channel layer 22 may be performed with a mask on the exposed portion to the channel layer 20 to provide the holes.
  • a single etch may be performed if the mask 30 has a pattern corresponding to the desired holes of the channel layer 20.
  • the holes would extend through the barrier layer 22 and to or into the channel layer 20.
  • the contact metal would then extend onto the barrier layer 22 to contact the material in the holes 300 as illustrated in Figure 3B.
  • the holes 300 may have a regular or irregular repeating or non-repeating pattern.
  • the holes 300 may also have a circular or other shape periphery.
  • FIG. 3 A The pattern of holes and shape of holes illustrated in Figure 3 A is provided as an example of a pattern and shape that may be used. However, other patterns and or shapes may also be used. Accordingly, some embodiments of the present invention should not be limited to a particular pattern and/or shape for the holes 300.
  • Figures 4A-4C illustrate fabrication of further embodiments of the present invention where a contact region is provided that extends onto the barrier layer. Fabrication of the embodiments of the present invention illustrated in Figures 4A-4C may be the same as that illustrated in Figures 1 A-1F except that the first dielectric layer 24 is resized to a smaller size first dielectric layer 424 so as to expose a portion of the barrier layer 22, for example, by undercutting the mask 30 into the first dielectric layer 24 with an isotropic etch.
  • the mask 30 could be stripped and another mask applied and the first dielectric layer 24 may be etched using this second mask.
  • first dielectric layer 424 in Figures 4A is described herein as a dielectric material, other removable materials that may withstand the conditions for deposition of the contact regions may be used.
  • the contact region 426 is regrown as discussed above and the mask 30 is removed.
  • the first dielectric layer 424 is removed and a second dielectric layer 430 is conformally deposited on the contact layers 426 and the barrier layer 22.
  • the second dielectric layer 430 would typically be deposited isotropically.
  • Windows in the second dielectric layer 430 may be provided on the contact layer 426 and ohmic contacts for the source and drain contacts 440 and 442 may be formed on the contact layer 426.
  • the ohmic contacts may also be formed prior to the deposition of the second dielectric layer 430.
  • the second dielectric layer 430 is anisotropically etched to expose the barrier layer 22 and provide sidewall spaces 430' and a gate contact recess.
  • a gate metal may be deposited and patterned, for example, using lift-off techniques, to provided the gate contact 444.
  • the length of the gate contact 444 may be approximately the width of the first dielectic layer 424 less twice the thickness of the second dielectric layer 430.
  • the first dielectric 424 may have a width of about 0.5 to about 1 ⁇ m and the second dielectric 430 may have a thickness of from about 0.1 to about 0.5 ⁇ m. While embodiments of the present invention have been illustrated with regrown contact regions for both the source and drain contacts, such regrown regions may be provided for only one of the source or the drain. Furthermore, while the gate contacts have been illustrated as substantially centered between the source and drain, in certain embodiments of the present invention, the gate contact may be offset, for example, toward the source contact. Furthermore, while embodiments of the present invention have been described with reference to a particular sequence of fabrication steps, a different sequence of steps may be utilized while still falling within the scope of the present invention.

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CN2005800245027A CN1998085B (zh) 2004-05-20 2005-02-09 制作具有再生长欧姆接触区的氮化物基晶体管的方法以及具有再生长欧姆接触区的氮化物基晶体管
KR1020067026779A KR20070032701A (ko) 2004-05-20 2005-02-09 재성장된 오믹 콘택 영역을 갖는 질화물계 트랜지스터의제조방법 및 재성장된 오믹 콘택 영역을 갖는 질화물계트랜지스터
EP05722846.2A EP1747589B1 (en) 2004-05-20 2005-02-09 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions
JP2007527194A JP5160225B2 (ja) 2004-05-20 2005-02-09 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ

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US20050258451A1 (en) 2005-11-24
JP5160225B2 (ja) 2013-03-13
US7432142B2 (en) 2008-10-07
CA2567066A1 (en) 2005-12-15
JP2007538402A (ja) 2007-12-27
EP1747589A1 (en) 2007-01-31
TW200539264A (en) 2005-12-01
KR20070032701A (ko) 2007-03-22
CN1998085A (zh) 2007-07-11
EP1747589B1 (en) 2014-03-26

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