TWI465389B - 用於奈米結構加工之導電性助層之沉積及選擇性移除 - Google Patents

用於奈米結構加工之導電性助層之沉積及選擇性移除 Download PDF

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TWI465389B
TWI465389B TW098105596A TW98105596A TWI465389B TW I465389 B TWI465389 B TW I465389B TW 098105596 A TW098105596 A TW 098105596A TW 98105596 A TW98105596 A TW 98105596A TW I465389 B TWI465389 B TW I465389B
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layer
conductive
substrate
nanostructures
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TW200944474A (en
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喬納斯 伯格
文森 德斯馬瑞斯
摩哈瑪德 夏非庫爾 卡畢爾
阿明 摩哈瑪德
大衛 布魯德
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斯莫勒科技公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
TW098105596A 2008-02-25 2009-02-23 用於奈米結構加工之導電性助層之沉積及選擇性移除 TWI465389B (zh)

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TWI465389B true TWI465389B (zh) 2014-12-21

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US (5) US8508049B2 (enExample)
EP (1) EP2250661B1 (enExample)
JP (4) JP5474835B2 (enExample)
KR (2) KR20160078517A (enExample)
CN (2) CN102007571B (enExample)
RU (1) RU2010138584A (enExample)
TW (1) TWI465389B (enExample)
WO (1) WO2009108101A1 (enExample)

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US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
RU2010114227A (ru) * 2007-09-12 2011-10-20 Смольтек Аб (Se) Соединение и связывание соседних слоев наноструктурами
KR20160078517A (ko) 2008-02-25 2016-07-04 스몰텍 에이비 나노구조 프로세싱을 위한 도전성 보조층의 증착과 선택적 제거
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
CN102110624B (zh) * 2009-12-23 2012-05-30 中芯国际集成电路制造(上海)有限公司 检测镍铂去除装置的方法
WO2012074271A2 (ko) * 2010-12-01 2012-06-07 Lee Choonrae 전계방출 표시장치와 그 제조방법
CN102299058B (zh) * 2011-05-10 2013-02-27 吉林大学 通过多级异质结构纳米材料构筑微电子器件的方法
EP2541581A1 (en) * 2011-06-29 2013-01-02 Khalid Waqas Device comprising nanostructures and method of manufacturing thereof
RU2497319C1 (ru) * 2012-02-28 2013-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов
US9711263B2 (en) * 2012-05-18 2017-07-18 3M Innovative Properties Company Corona patterning of overcoated nanowire transparent conducting coatings
CN103456677A (zh) * 2012-06-05 2013-12-18 中芯国际集成电路制造(上海)有限公司 半导体器件及其制造方法
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