JP2014140039A - ナノ構造処理のための導電性補助層の形成及び選択的除去 - Google Patents
ナノ構造処理のための導電性補助層の形成及び選択的除去 Download PDFInfo
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- JP2014140039A JP2014140039A JP2014019438A JP2014019438A JP2014140039A JP 2014140039 A JP2014140039 A JP 2014140039A JP 2014019438 A JP2014019438 A JP 2014019438A JP 2014019438 A JP2014019438 A JP 2014019438A JP 2014140039 A JP2014140039 A JP 2014140039A
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Abstract
【解決手段】基板の上部表面上に導電層を形成すること、導電層上に触媒のパターン層を形成すること、触媒層上に一又は複数の炭素、GaAs、ZnO、InP、InGaAs、GaN、InGaN、又はSiからなるナノ繊維、ナノチューブ、又はナノワイヤを含んでなるナノ構造を化学的蒸着法(CVD)により選択成長させること、及び一又は複数のナノ構造の間及び周囲の導電層を選択的に除去すること、を含む。
【選択図】図3
Description
本出願は、その全開示を出典明示によりここに援用する2008年2月25日出願の米国仮出願番号第61/031333号に基づく優先権を主張する。
ここに記載された技術は概して、ナノ構造の化学的蒸着法(CVD)の分野に関し、より特定すると、ナノ構造の成長中のプラズマ誘起損傷の低減又は除去、及び導電性及び絶縁表面の両方でナノ構造の自己整合成長を可能にすることに関する。
100−導電性基板
102−個別のナノ構造の成長を支えるためにパターン形成された触媒層
104−ナノ構造の「フォレスト」(複数の密集したナノ構造)の成長を支えるためにパターン形成された触媒層
106−個別のナノ構造
108−ナノ構造の「フォレスト」(複数の密集したナノ構造)
110−絶縁基板
112−連続金属下層
114−絶縁体の上部にあるパターン金属下層
116−絶縁基板の上面と同じ高さにある上面を有したパターン金属下層(研磨後の平坦なチップ)
118−ヴィア(垂直配線)
120−連続導電性補助層
122−残留触媒層(自己整合エッチング後)
124−残留導電性補助層(自己整合エッチング後)
126−任意の層
128−導波路のための基板
130−導波路材料
132−導電性補助層の残存する垂直側壁
134−パターン導電性補助層
136−絶縁体を通るヴィアホール
200−導電性補助層の形成
210−任意の付加的な層の形成
220−触媒層の形成及びパターン形成
230−ナノ構造の成長
240−補助層の選択的及び自己整合除去
本明細書に記載された技術の重要な応用は、例えばコンピュータデバイスで使用されうる集積回路の配線及び/又は熱エレベータの作製である。ナノ構造は、集積回路チップ内部で又は集積回路チップへ/から熱及び電気を運ぶために用いられる。使用される成長方法及びデバイスは、研磨による金属のパターン形成を伴う現行の処理基準と適合し、また関与する金属とも適合する。また、集積回路(複数のデバイス層)の三次元積層がここに記載された方法で作られたナノ構造を配線として利用できる。例えば、ヴィアホール配線構造を作製するために本発明を利用する方法が図8A−8Cに記載されている。図12は、ここに記載された技術及び方法を用いて作製された例示的なデバイスとして、酸化物絶縁体にヴィアホールを介して炭素ナノ構造が成長しているデバイスのSEM顕微鏡写真を示す。図12で、明るく平坦な領域は絶縁領域であり、残りの領域には垂直に成長したナノ構造が見られる。
原理を実証するために、パターン金(下)層(下にチタン接着促進層を有する)が、そうでなければ絶縁性の酸化物表面上に(標準的なリソグラフィ技術を用いて)形成された。触媒をパターン金属下層上に直接配するのは、成長中に大きなプラズマ誘起損傷が生じうるため望ましくない。代わりに、タングステン補助層(50nm)がチップ表面全体にスパッタされた。次いでパターン触媒層(Si10nm及びNi10nm)が標準的なリフトオフ工程によって(パターン金属下層と並んで)形成された。成長後、構造が図9A及び9Bに示されたように現れた。当該例で、成長温度は約700度、及びプラズマは約4トールの圧力でC2H2及びNH3ガス(それぞれ20及び100sccm)を混合して生成された。プラズマ電流は20mAに設定され、成長時間は約60分だった。この特定の例で、触媒は、成長工程後にナノ繊維の薄膜(「フォレスト」)が生じるようにパターン形成されたが、触媒域をもっと小さくすれば個別の垂直配向したナノ繊維が生じることとなる。
Claims (27)
- 一又は複数のナノ構造の作製方法であって:
基板の上部表面上に導電性補助層を形成すること;
導電性補助層上に触媒のパターン層を形成すること;
触媒層上に一又は複数のナノ構造を成長させること;及び
一又は複数のナノ構造の間及び周囲の導電性補助層を選択的に除去すること
を含む方法。 - 触媒層は形成された後にパターン形成される、請求項1に記載の方法。
- 基板が付加的に、その上部表面と同延であり且つ導電性補助層に覆われている金属下層を備える、請求項1に記載の方法。
- 金属下層がパターン形成されている、請求項3に記載の方法。
- 金属下層が:Cu、Ti、W、Mo、Pt、Al、Au、Pd、P、Ni、及びFeから選択された一又は複数の金属を含んでなる、請求項3に記載の方法。
- 金属下層が、TiN、WN、及びAlNから選択された一又は複数の導電性合金を含んでなる、請求項3に記載の方法。
- 金属下層が、一又は複数の導電性ポリマーを含んでなる、請求項3に記載の方法。
- 基板が半導体である、請求項1に記載の方法。
- 基板が絶縁体である、請求項1に記載の方法。
- 基板が、上面に少なくとも一つの導電層を有した絶縁体を含んでなる、請求項1に記載の方法。
- 形成のいずれかが:蒸着、めっき、スパッタリング、分子線エピタキシ、パルスレーザ蒸着、CVD、及びスピンコーティングから選択された方法によって実行される、請求項1に記載の方法。
- 一又は複数のナノ構造が、炭素、GaAs、ZnO、InP、InGaAs、GaN、InGaN、又はSiを含んでなる、請求項1に記載の方法。
- 一又は複数のナノ構造が、ナノ繊維、ナノチューブ、又はナノワイヤを含む、請求項1に記載の方法。
- 導電性補助層が:半導体、導電性ポリマー、及び合金から選択された材料を含んでなる、請求項1に記載の方法。
- 導電性補助層が、1nmから100Tmの厚さである、請求項1に記載の方法。
- 一又は複数のナノ構造がプラズマで成長する、請求項1に記載の方法。
- 導電性補助層の選択的除去が、エッチングにより達成される、請求項1に記載の方法。
- エッチングがプラズマドライエッチングである、請求項17に記載の方法。
- エッチングが電気化学エッチングである、請求項17に記載の方法。
- エッチングが光化学熱分解エッチングである、請求項17に記載の方法。
- エッチングが熱分解エッチングである、請求項17に記載の方法。
- 更に、導電性補助層と触媒層の間に付加的な層を形成することを含んでなる、請求項1に記載の方法。
- 一又は複数の絶縁領域によって隔てられた一又は複数の露出金属島を含んでなる基板;
一又は複数の露出金属島又は絶縁領域の少なくともいくつかを覆う基板上に配された導電性補助層;
導電性補助層上に配された触媒層;及び
触媒層上に配された一又は複数のナノ構造
を含むデバイス。 - ナノ構造が配線である、請求項23に記載のデバイス。
- 一又は複数のナノ構造を作製するための方法であって:
基板の上部表面上に金属下層を形成すること;
金属下層上に触媒層を形成すること;
触媒層上に絶縁体層を形成すること;
絶縁体層上に導電性補助層を形成すること;
導電性補助層から触媒層へと絶縁体層を通ってヴィアホールを作製すること;
ヴィアホールを介して触媒層上に一又は複数のナノ構造を成長させること;及び
導電性補助層を選択的に除去すること
を含む方法。 - 以下のステップ:
基板の上部表面上に金属下層を形成するステップ;
金属下層上に触媒層を形成するステップ;
触媒層上に絶縁体層を形成するステップ;
絶縁体層上に導電性補助層を形成するステップ;
導電性補助層から触媒層へと絶縁体層を通ってヴィアホールを作製するステップ;
ヴィアホールを介して触媒層上に一又は複数のナノ構造を成長させるステップ;及び
導電性補助層を選択的に除去するステップ
を含む工程によって製造された一又は複数のナノ構造を含むデバイス。 - 一又は複数のナノ構造を作製するための方法であって:
露出パターン金属下層又は露出絶縁体層を含む基板上に導電性補助層を形成すること;
導電性補助層の上又は露出絶縁体層の下に配されている触媒層からナノ構造を成長させること;及び
導電性補助層の一部又は全てをエッチングにより選択的に除去すること
を含む方法。
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Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7777291B2 (en) * | 2005-08-26 | 2010-08-17 | Smoltek Ab | Integrated circuits having interconnects and heat dissipators based on nanostructures |
EP2197782B1 (en) | 2007-09-12 | 2020-03-04 | Smoltek AB | Connecting and bonding adjacent layers with nanostructures |
KR101638463B1 (ko) | 2008-02-25 | 2016-07-11 | 스몰텍 에이비 | 나노구조 프로세싱을 위한 도전성 보조층의 증착과 선택적 제거 |
US20110076841A1 (en) * | 2009-09-30 | 2011-03-31 | Kahen Keith B | Forming catalyzed ii-vi semiconductor nanowires |
CN102110624B (zh) * | 2009-12-23 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | 检测镍铂去除装置的方法 |
EP2648205A2 (en) * | 2010-12-01 | 2013-10-09 | SN Display Co., Ltd. | Field emission display device and manufacturing method thereof |
CN102299058B (zh) * | 2011-05-10 | 2013-02-27 | 吉林大学 | 通过多级异质结构纳米材料构筑微电子器件的方法 |
EP2541581A1 (en) * | 2011-06-29 | 2013-01-02 | Khalid Waqas | Device comprising nanostructures and method of manufacturing thereof |
RU2497319C1 (ru) * | 2012-02-28 | 2013-10-27 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" | Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов |
KR20150013292A (ko) * | 2012-05-18 | 2015-02-04 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 오버코팅된 나노와이어 투명 전도성 코팅의 코로나 패터닝 |
CN103456677A (zh) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN103487143B (zh) * | 2012-06-12 | 2015-07-29 | 清华大学 | 光强分布的检测系统 |
FR2997551B1 (fr) * | 2012-10-26 | 2015-12-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure |
KR101938010B1 (ko) | 2012-11-22 | 2019-01-14 | 전북대학교산학협력단 | 다이오드의 제조방법 |
US9006095B2 (en) | 2013-02-19 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
TWI518756B (zh) | 2013-08-16 | 2016-01-21 | 財團法人工業技術研究院 | 圖案化的導電薄膜及其製造方法與應用 |
US9324628B2 (en) * | 2014-02-25 | 2016-04-26 | International Business Machines Corporation | Integrated circuit heat dissipation using nanostructures |
US10327477B2 (en) * | 2016-07-25 | 2019-06-25 | Altria Client Services Llc | Cartridge for an aerosol-generating system with heater protection |
CN106847790A (zh) * | 2017-01-17 | 2017-06-13 | 华南理工大学 | 一种集成碳纳米管和石墨烯的互连结构及其制造方法 |
US10490411B2 (en) | 2017-05-19 | 2019-11-26 | Applied Materials, Inc. | Method for enabling self-aligned lithography on metal contacts and selective deposition using free-standing vertical carbon structures |
TWI766072B (zh) * | 2017-08-29 | 2022-06-01 | 瑞典商斯莫勒科技公司 | 能量存儲中介層裝置、電子裝置和製造方法 |
CN108022694B (zh) * | 2017-12-04 | 2019-07-09 | 中国科学院合肥物质科学研究院 | 一种透明导电氧化物薄膜-纳米线网络的制备方法 |
US10971423B2 (en) * | 2018-06-08 | 2021-04-06 | Carnegie Mellon University | Metal nanowire based thermal interface materials |
US11493288B2 (en) * | 2018-06-08 | 2022-11-08 | Carnegie Mellon University | Nanowire-based thermal interface |
US11387103B1 (en) * | 2019-05-01 | 2022-07-12 | The United States Of America As Represented By The Secretary Of The Army | Process for fabricating semiconductor nanofibers |
US20220326609A1 (en) * | 2019-06-03 | 2022-10-13 | Rutgers, The State University Of New Jersey | Sacrificial nanotransfer lithography for the metalization of plastics |
KR102287557B1 (ko) * | 2019-11-06 | 2021-08-11 | 한국과학기술원 | 나노섬유를 이용한 금속 나노 패턴 형성 방법 및 금속 나노 패턴 |
KR102274144B1 (ko) * | 2020-01-17 | 2021-07-07 | 전남대학교산학협력단 | 전자 소자용 박막 및 그의 제조방법 |
DE102020112276A1 (de) * | 2020-05-06 | 2021-11-11 | Danfoss Silicon Power Gmbh | Leistungsmodul |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010030169A1 (en) * | 2000-04-13 | 2001-10-18 | Hideo Kitagawa | Method of etching organic film and method of producing element |
JP2001358218A (ja) * | 2000-04-13 | 2001-12-26 | Canon Inc | 有機膜のエッチング方法及び素子の製造方法 |
WO2002080361A1 (en) * | 2001-03-30 | 2002-10-10 | California Institute Of Technology | Carbon nanotube array rf filter |
US20060051958A1 (en) * | 2004-09-03 | 2006-03-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual damascene process with dummy features |
US20070096326A1 (en) * | 2005-10-28 | 2007-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication method thereof |
JP2007525030A (ja) * | 2004-02-26 | 2007-08-30 | インターナショナル・ビジネス・マシーンズ・コーポレーション | カーボンナノチューブ複合材相互接続ビアを用いた集積回路チップ |
JP2008016440A (ja) * | 2006-06-30 | 2008-01-24 | Samsung Sdi Co Ltd | 炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法 |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5445895A (en) | 1977-09-17 | 1979-04-11 | Toshiba Machine Co Ltd | Saw with set wrest and automatic jigsaw having same |
JPH01125858A (ja) * | 1987-11-10 | 1989-05-18 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US5651865A (en) | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
US5584972A (en) | 1995-02-01 | 1996-12-17 | Sony Corporation | Plasma noise and arcing suppressor apparatus and method for sputter deposition |
US5576939A (en) | 1995-05-05 | 1996-11-19 | Drummond; Geoffrey N. | Enhanced thin film DC plasma power supply |
US5660895A (en) * | 1996-04-24 | 1997-08-26 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Low-temperature plasma-enhanced chemical vapor deposition of silicon oxide films and fluorinated silicon oxide films using disilane as a silicon precursor |
JP3372848B2 (ja) | 1996-10-31 | 2003-02-04 | キヤノン株式会社 | 電子放出素子及び画像表示装置及びそれらの製造方法 |
JP3740295B2 (ja) | 1997-10-30 | 2006-02-01 | キヤノン株式会社 | カーボンナノチューブデバイス、その製造方法及び電子放出素子 |
JP3497740B2 (ja) | 1998-09-09 | 2004-02-16 | 株式会社東芝 | カーボンナノチューブの製造方法及び電界放出型冷陰極装置の製造方法 |
US6146227A (en) * | 1998-09-28 | 2000-11-14 | Xidex Corporation | Method for manufacturing carbon nanotubes as functional elements of MEMS devices |
JP2000353467A (ja) * | 1999-04-09 | 2000-12-19 | Nec Corp | 冷陰極装置の製造方法 |
US6331209B1 (en) | 1999-04-21 | 2001-12-18 | Jin Jang | Method of forming carbon nanotubes |
EP1061554A1 (en) * | 1999-06-15 | 2000-12-20 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
KR100480773B1 (ko) * | 2000-01-07 | 2005-04-06 | 삼성에스디아이 주식회사 | 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법 |
US6297592B1 (en) | 2000-08-04 | 2001-10-02 | Lucent Technologies Inc. | Microwave vacuum tube device employing grid-modulated cold cathode source having nanotube emitters |
JP2002117791A (ja) | 2000-10-06 | 2002-04-19 | Hitachi Ltd | 画像表示装置 |
FR2815026B1 (fr) | 2000-10-06 | 2004-04-09 | Commissariat Energie Atomique | Procede d'auto-organisation de microstructures ou de nanostructures et dispositif a microstructures ou a nanostructures |
JP2002203473A (ja) | 2000-11-01 | 2002-07-19 | Sony Corp | 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置 |
JP2002289086A (ja) | 2001-03-27 | 2002-10-04 | Canon Inc | 電子放出素子、電子源、画像形成装置、及び電子放出素子の製造方法 |
US7084507B2 (en) | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
KR100470227B1 (ko) | 2001-06-07 | 2005-02-05 | 두산디앤디 주식회사 | 화학기계적 연마장치의 캐리어 헤드 |
US6739932B2 (en) | 2001-06-07 | 2004-05-25 | Si Diamond Technology, Inc. | Field emission display using carbon nanotubes and methods of making the same |
US6982519B2 (en) | 2001-09-18 | 2006-01-03 | Ut-Battelle Llc | Individually electrically addressable vertically aligned carbon nanofibers on insulating substrates |
JP2003115257A (ja) | 2001-10-03 | 2003-04-18 | Sony Corp | 冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法 |
JP2003115259A (ja) | 2001-10-03 | 2003-04-18 | Sony Corp | 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、冷陰極電界電子放出表示装置及びその製造方法、並びに、薄膜のエッチング方法 |
US20040251841A1 (en) | 2001-12-06 | 2004-12-16 | Nobuyasu Negishi | Electron emitting device and method of manufacturing the same and display apparatus using the same |
US6965513B2 (en) | 2001-12-20 | 2005-11-15 | Intel Corporation | Carbon nanotube thermal interface structures |
SE0104452D0 (sv) | 2001-12-28 | 2001-12-28 | Forskarpatent I Vaest Ab | Metod för framställning av nanostrukturer in-situ, och in-situ framställda nanostrukturer |
FR2836280B1 (fr) | 2002-02-19 | 2004-04-02 | Commissariat Energie Atomique | Structure de cathode a couche emissive formee sur une couche resistive |
US6858197B1 (en) | 2002-03-13 | 2005-02-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Controlled patterning and growth of single wall and multi-wall carbon nanotubes |
SE0200868D0 (sv) | 2002-03-20 | 2002-03-20 | Chalmers Technology Licensing | Theoretical model för a nanorelay and same relay |
US6699779B2 (en) * | 2002-03-22 | 2004-03-02 | Hewlett-Packard Development Company, L.P. | Method for making nanoscale wires and gaps for switches and transistors |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US6831017B1 (en) | 2002-04-05 | 2004-12-14 | Integrated Nanosystems, Inc. | Catalyst patterning for nanowire devices |
WO2003093169A2 (en) | 2002-04-29 | 2003-11-13 | The Trustees Of Boston College | Density controlled carbon nanotube array electrodes |
FR2839505B1 (fr) | 2002-05-07 | 2005-07-15 | Univ Claude Bernard Lyon | Procede pour modifier les proprietes d'une couche mince et substrat faisant application du procede |
US6774052B2 (en) | 2002-06-19 | 2004-08-10 | Nantero, Inc. | Method of making nanotube permeable base transistor |
JP3890470B2 (ja) | 2002-07-16 | 2007-03-07 | 日立造船株式会社 | カーボンナノチューブを用いた電子放出素子用電極材料およびその製造方法 |
WO2004012932A1 (en) * | 2002-08-01 | 2004-02-12 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University | Method for synthesizing nanoscale structures in defined locations |
US20040037972A1 (en) | 2002-08-22 | 2004-02-26 | Kang Simon | Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method |
US7175494B1 (en) * | 2002-08-22 | 2007-02-13 | Cdream Corporation | Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device |
US7026174B2 (en) | 2002-09-30 | 2006-04-11 | Lam Research Corporation | Method for reducing wafer arcing |
JP5226174B2 (ja) | 2002-11-05 | 2013-07-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ナノ構造体、そのようなナノ構造体を有する電子機器およびナノ構造体を調製する方法 |
CN1239387C (zh) | 2002-11-21 | 2006-02-01 | 清华大学 | 碳纳米管阵列及其生长方法 |
US8199388B2 (en) | 2002-11-22 | 2012-06-12 | Inphase Technologies, Inc. | Holographic recording system having a relay system |
US7518247B2 (en) | 2002-11-29 | 2009-04-14 | Nec Corporation | Semiconductor device and its manufacturing method |
US6984535B2 (en) | 2002-12-20 | 2006-01-10 | Cdream Corporation | Selective etching of a protective layer to form a catalyst layer for an electron-emitting device |
JP2004202602A (ja) * | 2002-12-24 | 2004-07-22 | Sony Corp | 微小構造体の製造方法、及び型材の製造方法 |
JP2004261875A (ja) | 2003-01-09 | 2004-09-24 | Sony Corp | 転写用原盤の製造方法および転写用原盤、ならびに基板の製造方法および基板 |
US6764874B1 (en) | 2003-01-30 | 2004-07-20 | Motorola, Inc. | Method for chemical vapor deposition of single walled carbon nanotubes |
US7316061B2 (en) | 2003-02-03 | 2008-01-08 | Intel Corporation | Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface |
US7759609B2 (en) | 2003-03-06 | 2010-07-20 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Method for manufacturing a patterned structure |
US20040182600A1 (en) | 2003-03-20 | 2004-09-23 | Fujitsu Limited | Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof |
CN100419943C (zh) | 2003-04-03 | 2008-09-17 | 清华大学 | 一种场发射显示装置 |
US7608147B2 (en) | 2003-04-04 | 2009-10-27 | Qunano Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
SE0301236D0 (sv) | 2003-04-28 | 2003-04-28 | Chalmers Technology Licensing | Method of manufacturing a nanoscale conductive device |
KR100982419B1 (ko) * | 2003-05-01 | 2010-09-15 | 삼성전자주식회사 | 탄소나노튜브를 이용한 반도체 소자의 배선 형성 방법 및이 방법에 의해 제조된 반도체 소자 |
KR100554155B1 (ko) | 2003-06-09 | 2006-02-22 | 학교법인 포항공과대학교 | 금속/반도체 나노막대 이종구조를 이용한 전극 구조물 및그 제조 방법 |
TW200506998A (en) * | 2003-06-19 | 2005-02-16 | Cdream Display Corp | Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method |
KR100537512B1 (ko) | 2003-09-01 | 2005-12-19 | 삼성에스디아이 주식회사 | 카본나노튜브구조체 및 이의 제조방법 그리고 이를 응용한전계방출소자 및 표시장치 |
JP4689218B2 (ja) * | 2003-09-12 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2005116469A (ja) | 2003-10-10 | 2005-04-28 | Sony Corp | 冷陰極電界電子放出素子の製造方法 |
US7459839B2 (en) | 2003-12-05 | 2008-12-02 | Zhidan Li Tolt | Low voltage electron source with self aligned gate apertures, and luminous display using the electron source |
JP2007525830A (ja) | 2003-12-22 | 2007-09-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体ナノワイヤ群の製作及びナノワイヤ群を備える電子デバイス |
JP4184306B2 (ja) | 2004-03-18 | 2008-11-19 | パイオニア株式会社 | 電子放出素子 |
JP4448356B2 (ja) | 2004-03-26 | 2010-04-07 | 富士通株式会社 | 半導体装置およびその製造方法 |
US20060086994A1 (en) | 2004-05-14 | 2006-04-27 | Susanne Viefers | Nanoelectromechanical components |
US6943317B1 (en) | 2004-07-02 | 2005-09-13 | Advanced Energy Industries, Inc. | Apparatus and method for fast arc extinction with early shunting of arc current in plasma |
JP5374801B2 (ja) * | 2004-08-31 | 2013-12-25 | 富士通株式会社 | 炭素元素からなる線状構造物質の形成体及び形成方法 |
JP2006108649A (ja) | 2004-09-09 | 2006-04-20 | Masaru Hori | ナノインプリント用金型、ナノパターンの形成方法及び樹脂成型物 |
WO2006137893A2 (en) | 2004-10-01 | 2006-12-28 | Board Of Regents Of The University Of Texas System | Polymer-free carbon nanotube assemblies (fibers, ropes, ribbons, films) |
TWI463615B (zh) | 2004-11-04 | 2014-12-01 | Taiwan Semiconductor Mfg Co Ltd | 以奈米管為基礎之具方向性導電黏著 |
WO2006085559A1 (ja) * | 2005-02-10 | 2006-08-17 | Matsushita Electric Industrial Co., Ltd. | 微細構造体を保持するための構造体、半導体装置、tft駆動回路、パネル、ディスプレイ、センサおよびこれらの製造方法 |
KR100682863B1 (ko) | 2005-02-19 | 2007-02-15 | 삼성에스디아이 주식회사 | 탄소나노튜브 구조체 및 그 제조방법과, 탄소나노튜브 구조체를 이용한 전계방출소자 및 그 제조방법 |
KR101145146B1 (ko) * | 2005-04-07 | 2012-05-14 | 엘지디스플레이 주식회사 | 박막트랜지스터와 그 제조방법 |
KR101361946B1 (ko) | 2005-04-25 | 2014-02-12 | 스몰텍 에이비 | 기판 상에서의 나노구조체의 제어 성장 및 그에 기반한 전자 방출 장치 |
US8173525B2 (en) | 2005-06-17 | 2012-05-08 | Georgia Tech Research Corporation | Systems and methods for nanomaterial transfer |
US7777291B2 (en) | 2005-08-26 | 2010-08-17 | Smoltek Ab | Integrated circuits having interconnects and heat dissipators based on nanostructures |
KR101386268B1 (ko) * | 2005-08-26 | 2014-04-17 | 스몰텍 에이비 | 나노구조체에 기반한 인터커넥트 및 방열기 |
US7446044B2 (en) * | 2005-09-19 | 2008-11-04 | California Institute Of Technology | Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
KR20070071177A (ko) | 2005-12-29 | 2007-07-04 | 삼성전자주식회사 | 유리 위에의 단일벽 탄소나노튜브 제조방법 |
US7687981B2 (en) | 2006-05-05 | 2010-03-30 | Brother International Corporation | Method for controlled density growth of carbon nanotubes |
US8337979B2 (en) | 2006-05-19 | 2012-12-25 | Massachusetts Institute Of Technology | Nanostructure-reinforced composite articles and methods |
US20080001443A1 (en) | 2006-07-03 | 2008-01-03 | Colglazier James J | Combination cooler and seat system |
WO2008054283A1 (en) | 2006-11-01 | 2008-05-08 | Smoltek Ab | Photonic crystals based on nanostructures |
JP4870048B2 (ja) | 2007-08-20 | 2012-02-08 | 富士通株式会社 | 電子部品装置及びその製造方法 |
EP2197782B1 (en) | 2007-09-12 | 2020-03-04 | Smoltek AB | Connecting and bonding adjacent layers with nanostructures |
KR101638463B1 (ko) | 2008-02-25 | 2016-07-11 | 스몰텍 에이비 | 나노구조 프로세싱을 위한 도전성 보조층의 증착과 선택적 제거 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010030169A1 (en) * | 2000-04-13 | 2001-10-18 | Hideo Kitagawa | Method of etching organic film and method of producing element |
JP2001358218A (ja) * | 2000-04-13 | 2001-12-26 | Canon Inc | 有機膜のエッチング方法及び素子の製造方法 |
WO2002080361A1 (en) * | 2001-03-30 | 2002-10-10 | California Institute Of Technology | Carbon nanotube array rf filter |
JP2007525030A (ja) * | 2004-02-26 | 2007-08-30 | インターナショナル・ビジネス・マシーンズ・コーポレーション | カーボンナノチューブ複合材相互接続ビアを用いた集積回路チップ |
US20060051958A1 (en) * | 2004-09-03 | 2006-03-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual damascene process with dummy features |
US20070096326A1 (en) * | 2005-10-28 | 2007-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication method thereof |
JP2008016440A (ja) * | 2006-06-30 | 2008-01-24 | Samsung Sdi Co Ltd | 炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法 |
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US8866307B2 (en) | 2014-10-21 |
US8508049B2 (en) | 2013-08-13 |
JP2017152716A (ja) | 2017-08-31 |
KR20160078517A (ko) | 2016-07-04 |
JP2016195257A (ja) | 2016-11-17 |
JP6126725B2 (ja) | 2017-05-10 |
CN105441903A (zh) | 2016-03-30 |
US20150318085A1 (en) | 2015-11-05 |
TW200944474A (en) | 2009-11-01 |
EP2250661A4 (en) | 2011-09-07 |
JP5943947B2 (ja) | 2016-07-05 |
RU2010138584A (ru) | 2012-04-10 |
US20130334704A1 (en) | 2013-12-19 |
US9114993B2 (en) | 2015-08-25 |
US20180155824A1 (en) | 2018-06-07 |
CN102007571A (zh) | 2011-04-06 |
KR20100117075A (ko) | 2010-11-02 |
CN105441903B (zh) | 2018-04-24 |
WO2009108101A1 (en) | 2009-09-03 |
US20090233124A1 (en) | 2009-09-17 |
JP2011517366A (ja) | 2011-06-02 |
US20150004092A1 (en) | 2015-01-01 |
JP5474835B2 (ja) | 2014-04-16 |
TWI465389B (zh) | 2014-12-21 |
KR101638463B1 (ko) | 2016-07-11 |
EP2250661B1 (en) | 2020-04-08 |
CN102007571B (zh) | 2016-01-20 |
EP2250661A1 (en) | 2010-11-17 |
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