CN100483613C - 量子点制作方法 - Google Patents
量子点制作方法 Download PDFInfo
- Publication number
- CN100483613C CN100483613C CNB2005100333250A CN200510033325A CN100483613C CN 100483613 C CN100483613 C CN 100483613C CN B2005100333250 A CNB2005100333250 A CN B2005100333250A CN 200510033325 A CN200510033325 A CN 200510033325A CN 100483613 C CN100483613 C CN 100483613C
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- quantum
- substrate
- quantum dot
- quantum point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002096 quantum dot Substances 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 14
- 238000011534 incubation Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 6
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 229910017083 AlN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100333250A CN100483613C (zh) | 2005-02-24 | 2005-02-24 | 量子点制作方法 |
US11/307,725 US20060189104A1 (en) | 2005-02-24 | 2006-02-18 | Method for forming a quantum dot pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100333250A CN100483613C (zh) | 2005-02-24 | 2005-02-24 | 量子点制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1825534A CN1825534A (zh) | 2006-08-30 |
CN100483613C true CN100483613C (zh) | 2009-04-29 |
Family
ID=36913299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100333250A Expired - Fee Related CN100483613C (zh) | 2005-02-24 | 2005-02-24 | 量子点制作方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060189104A1 (zh) |
CN (1) | CN100483613C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8715839B2 (en) | 2005-06-30 | 2014-05-06 | L. Pierre de Rochemont | Electrical components and method of manufacture |
CN101830430B (zh) * | 2010-05-24 | 2013-03-27 | 山东大学 | 一种大面积、高度均匀有序量子点阵列制造方法 |
KR101154368B1 (ko) | 2010-09-27 | 2012-06-15 | 엘지이노텍 주식회사 | 광변환부재 제조방법 및 그 제조방법으로 제조된 광변환부재를 포함하는 백라이트 유닛 |
US9123768B2 (en) * | 2010-11-03 | 2015-09-01 | L. Pierre de Rochemont | Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof |
WO2013019299A2 (en) * | 2011-05-11 | 2013-02-07 | Qd Vision, Inc. | Method for processing devices including quantum dots and devices |
WO2013033654A1 (en) | 2011-08-31 | 2013-03-07 | De Rochemont L Pierre | Fully integrated thermoelectric devices and their application to aerospace de-icing systems |
CN102290435B (zh) * | 2011-09-14 | 2013-11-06 | 青岛理工大学 | 一种大面积量子点及其阵列制造方法 |
CN102623307B (zh) * | 2012-03-29 | 2014-01-08 | 中国科学院半导体研究所 | 通用的多种材料间全限制量子点的自对准制备方法 |
US9281203B2 (en) | 2013-08-23 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon dot formation by direct self-assembly method for flash memory |
US9064821B2 (en) | 2013-08-23 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co. Ltd. | Silicon dot formation by self-assembly method and selective silicon growth for flash memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1484277A (zh) * | 2002-09-17 | 2004-03-24 | ����ʿ�뵼������˾ | 量子点形成方法 |
WO2004054006A1 (en) * | 2002-12-10 | 2004-06-24 | Lg Innotek Co., Ltd | Led and fabrication method thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3149030B2 (ja) * | 1991-06-13 | 2001-03-26 | 富士通株式会社 | 半導体量子箱装置及びその製造方法 |
JP3235144B2 (ja) * | 1991-08-02 | 2001-12-04 | ソニー株式会社 | 量子箱列の作製方法 |
US5482890A (en) * | 1994-10-14 | 1996-01-09 | National Science Council | Method of fabricating quantum dot structures |
KR100301116B1 (ko) * | 1998-12-02 | 2001-10-20 | 오길록 | 양자점 구조를 갖는 화합물반도체 기판의 제조 방법 |
US6709929B2 (en) * | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
KR100763897B1 (ko) * | 2002-12-23 | 2007-10-05 | 삼성전자주식회사 | 나노도트를 가지는 메모리 제조방법 |
US8318520B2 (en) * | 2005-12-30 | 2012-11-27 | Lin Ming-Nung | Method of microminiaturizing a nano-structure |
-
2005
- 2005-02-24 CN CNB2005100333250A patent/CN100483613C/zh not_active Expired - Fee Related
-
2006
- 2006-02-18 US US11/307,725 patent/US20060189104A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1484277A (zh) * | 2002-09-17 | 2004-03-24 | ����ʿ�뵼������˾ | 量子点形成方法 |
WO2004054006A1 (en) * | 2002-12-10 | 2004-06-24 | Lg Innotek Co., Ltd | Led and fabrication method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN1825534A (zh) | 2006-08-30 |
US20060189104A1 (en) | 2006-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100483613C (zh) | 量子点制作方法 | |
KR102564288B1 (ko) | 그라파이트 기판상에서 성장한 나노와이어 또는 나노피라미드 | |
US8785226B2 (en) | Epitaxial growth of in-plane nanowires and nanowire devices | |
EP3026716B1 (en) | Semiconductor light emitting element and method for manufacturing same | |
US7084563B2 (en) | Group III-nitride layers with patterned surfaces | |
TWI464903B (zh) | 外延襯底及其製備方法、外延襯底作為生長外延層的應用 | |
KR101209151B1 (ko) | 양자점 제조방법 및 양자점을 포함하는 반도체 구조물 | |
US9627561B2 (en) | Method for etching multi-layer epitaxial material | |
JP2005183905A (ja) | 窒化物半導体の製造方法とこれを利用した窒化物半導体 | |
CN102214676A (zh) | 包含鳍片的半导体结构及其制造方法 | |
CN104016294A (zh) | 一种硅基iii-v族纳米管与微米管及其制备方法 | |
CN110416372A (zh) | 一种面向micro-LED应用的无损微纳结构的制备方法 | |
CN114122210A (zh) | 复合衬底led外延结构及其制备方法 | |
CN100405552C (zh) | 电子束微细加工方法 | |
US7514282B2 (en) | Patterned silicon submicron tubes | |
KR100593941B1 (ko) | 3족 질화물 발광 소자의 제조 방법 | |
KR20180060585A (ko) | 나노패턴의 형성방법, 발광소자의 제조방법 및 그에 의해 제조된 발광소자 | |
JP2008100335A (ja) | ナノ構造およびナノ構造の作製方法 | |
JP3642659B2 (ja) | 半導体量子構造の製造方法及び半導体量子構造 | |
KR100359739B1 (ko) | 이종 단결정박막의 접합 및 덧성장방법 | |
KR102504967B1 (ko) | 고감도 센서용 반도체 소자의 제조방법 | |
Tukiainen et al. | Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substrates | |
CN115207175B (zh) | 基于图形化衬底的发光二极管芯片及其制备方法 | |
KR101392999B1 (ko) | 화합물반도체 선택적 결정 성장 방법 | |
CN115148873A (zh) | 半导体器件的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170825 Address after: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee after: Shanghai State Intellectual Property Services Co., Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Co-patentee before: Hon Hai Precision Industry Co., Ltd. Patentee before: Hongfujin Precise Industry (Shenzhen) Co., Ltd. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 Termination date: 20190224 |
|
CF01 | Termination of patent right due to non-payment of annual fee |