JP2012514319A5 - - Google Patents

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Publication number
JP2012514319A5
JP2012514319A5 JP2011542726A JP2011542726A JP2012514319A5 JP 2012514319 A5 JP2012514319 A5 JP 2012514319A5 JP 2011542726 A JP2011542726 A JP 2011542726A JP 2011542726 A JP2011542726 A JP 2011542726A JP 2012514319 A5 JP2012514319 A5 JP 2012514319A5
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JP
Japan
Prior art keywords
via opening
opening
depth
mask
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011542726A
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English (en)
Japanese (ja)
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JP2012514319A (ja
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Publication date
Priority claimed from DE102008063430.1A external-priority patent/DE102008063430B4/de
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Publication of JP2012514319A publication Critical patent/JP2012514319A/ja
Publication of JP2012514319A5 publication Critical patent/JP2012514319A5/ja
Pending legal-status Critical Current

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JP2011542726A 2008-12-31 2009-12-29 特別に先細りされた遷移ビアを備えた半導体デバイスのメタライゼーションシステム Pending JP2012514319A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008063430.1A DE102008063430B4 (de) 2008-12-31 2008-12-31 Verfahren zur Herstellung eines Metallisierungssystem eines Halbleiterbauelements mit zusätzlich verjüngten Übergangskontakten
DE102008063430.1 2008-12-31
US12/634,216 2009-12-09
US12/634,216 US8835303B2 (en) 2008-12-31 2009-12-09 Metallization system of a semiconductor device comprising extra-tapered transition vias
PCT/EP2009/009308 WO2010076019A1 (en) 2008-12-31 2009-12-29 A metallization system of a semiconductor device comprising extra-tapered transition vias

Publications (2)

Publication Number Publication Date
JP2012514319A JP2012514319A (ja) 2012-06-21
JP2012514319A5 true JP2012514319A5 (enExample) 2013-02-07

Family

ID=42234624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542726A Pending JP2012514319A (ja) 2008-12-31 2009-12-29 特別に先細りされた遷移ビアを備えた半導体デバイスのメタライゼーションシステム

Country Status (6)

Country Link
US (1) US8835303B2 (enExample)
JP (1) JP2012514319A (enExample)
KR (1) KR20130127013A (enExample)
CN (1) CN102362343B (enExample)
DE (1) DE102008063430B4 (enExample)
WO (1) WO2010076019A1 (enExample)

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FR2975826A1 (fr) * 2011-05-27 2012-11-30 St Microelectronics Crolles 2 Procede de formation d'un trou ou d'une tranchee ayant un profil evase
JP2013021001A (ja) * 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8987916B2 (en) * 2011-11-28 2015-03-24 Freescale Semiconductor, Inc. Methods and apparatus to improve reliability of isolated vias
JP5891846B2 (ja) * 2012-02-24 2016-03-23 富士通セミコンダクター株式会社 半導体装置の製造方法
US8815752B2 (en) * 2012-11-28 2014-08-26 Micron Technology, Inc. Methods of forming features in semiconductor device structures
US9305886B2 (en) * 2013-12-18 2016-04-05 Globalfoundries Singapore Pte. Ltd. Integrated circuits having crack-stop structures and methods for fabricating the same
US10163778B2 (en) 2014-08-14 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of damascene structure
CN104505471B (zh) * 2014-12-22 2017-12-29 昆山工研院新型平板显示技术中心有限公司 一种高开口率掩膜板的制备方法及掩膜板
KR20160120891A (ko) 2015-04-09 2016-10-19 삼성전자주식회사 반도체 장치
US9536826B1 (en) * 2015-06-15 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure with interconnect structure
US9679850B2 (en) * 2015-10-30 2017-06-13 Taiwan Semiconductor Manufacturing Company Ltd. Method of fabricating semiconductor structure
US9917027B2 (en) * 2015-12-30 2018-03-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with aluminum via structures and methods for fabricating the same
CN107622992B (zh) * 2016-07-14 2021-04-27 联华电子股份有限公司 半导体元件及其制作方法
US10276485B2 (en) 2017-08-02 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory
US10998259B2 (en) 2017-08-31 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10522394B2 (en) * 2017-09-25 2019-12-31 Marvell World Trade Ltd. Method of creating aligned vias in ultra-high density integrated circuits
US10566411B2 (en) * 2017-12-07 2020-02-18 Globalfoundries Inc. On-chip resistors with direct wiring connections
KR102751263B1 (ko) 2018-08-07 2025-01-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11158571B2 (en) * 2018-12-20 2021-10-26 Micron Technology, Inc. Devices including conductive interconnect structures, related electronic systems, and related methods
WO2020140202A1 (en) 2019-01-02 2020-07-09 Yangtze Memory Technologies Co., Ltd. Method for forming dual damascene interconnect structure
CN112151497B (zh) * 2019-06-28 2023-08-22 台湾积体电路制造股份有限公司 半导体结构以及形成半导体结构的方法
DE102019131408B4 (de) 2019-06-28 2025-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Verbesserte Kontaktierung von Metallleitungen bei Fehlausrichtung von BEOL-Durchkontaktierungen
US20210020455A1 (en) * 2019-07-17 2021-01-21 Nanya Technology Corporation Conductive via structure
US11652049B2 (en) 2021-03-10 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming thereof
KR20230009126A (ko) * 2021-07-08 2023-01-17 엘지이노텍 주식회사 회로기판 및 이를 포함하는 패키지 기판
KR20230013438A (ko) * 2021-07-19 2023-01-26 삼성전자주식회사 반도체 장치
KR20230135384A (ko) * 2022-03-16 2023-09-25 주식회사 디비하이텍 저항 변화 메모리 장치 및 그 제조 방법
US20240332074A1 (en) * 2023-03-27 2024-10-03 International Business Machines Corporation Metal wires with expanded sidewalls

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JP2000260873A (ja) * 1999-01-08 2000-09-22 Nec Corp 半導体装置のコンタクト又は配線の形成方法
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JP4476171B2 (ja) * 2005-05-30 2010-06-09 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
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US8264086B2 (en) * 2005-12-05 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Via structure with improved reliability
DE102006025405B4 (de) * 2006-05-31 2018-03-29 Globalfoundries Inc. Verfahren zur Herstellung einer Metallisierungsschicht eines Halbleiterbauelements mit unterschiedlich dicken Metallleitungen

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