JP2010283347A5 - - Google Patents
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- Publication number
- JP2010283347A5 JP2010283347A5 JP2010123865A JP2010123865A JP2010283347A5 JP 2010283347 A5 JP2010283347 A5 JP 2010283347A5 JP 2010123865 A JP2010123865 A JP 2010123865A JP 2010123865 A JP2010123865 A JP 2010123865A JP 2010283347 A5 JP2010283347 A5 JP 2010283347A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- iridium
- barrier
- barrier layer
- ild
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 21
- 238000000034 method Methods 0.000 claims 21
- 238000005240 physical vapour deposition Methods 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 9
- 229910052741 iridium Inorganic materials 0.000 claims 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 9
- 239000004020 conductor Substances 0.000 claims 8
- ULFQGKXWKFZMLH-UHFFFAOYSA-N iridium tantalum Chemical compound [Ta].[Ir] ULFQGKXWKFZMLH-UHFFFAOYSA-N 0.000 claims 8
- 229910052715 tantalum Inorganic materials 0.000 claims 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 3
- 230000009977 dual effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/477,389 US7951708B2 (en) | 2009-06-03 | 2009-06-03 | Copper interconnect structure with amorphous tantalum iridium diffusion barrier |
| US12/477389 | 2009-06-03 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010283347A JP2010283347A (ja) | 2010-12-16 |
| JP2010283347A5 true JP2010283347A5 (enExample) | 2013-09-12 |
| JP5444124B2 JP5444124B2 (ja) | 2014-03-19 |
Family
ID=43263917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010123865A Expired - Fee Related JP5444124B2 (ja) | 2009-06-03 | 2010-05-31 | 拡散バリアを形成する方法、拡散バリア構造体及び半導体デバイスを形成する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7951708B2 (enExample) |
| JP (1) | JP5444124B2 (enExample) |
| KR (1) | KR101581050B1 (enExample) |
| CN (1) | CN101908501A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6013901B2 (ja) * | 2012-12-20 | 2016-10-25 | 東京エレクトロン株式会社 | Ｃｕ配線の形成方法 |
| KR20160086757A (ko) * | 2014-12-09 | 2016-07-20 | 인텔 코포레이션 | 구리 합금 도전성 루트 구조체를 갖는 마이크로전자 기판 |
| US9875958B1 (en) | 2016-11-09 | 2018-01-23 | International Business Machines Corporation | Trace/via hybrid structure and method of manufacture |
| KR102624631B1 (ko) | 2016-12-02 | 2024-01-12 | 삼성전자주식회사 | 반도체 장치 |
| US10211052B1 (en) * | 2017-09-22 | 2019-02-19 | Lam Research Corporation | Systems and methods for fabrication of a redistribution layer to avoid etching of the layer |
| US11195748B2 (en) | 2017-09-27 | 2021-12-07 | Invensas Corporation | Interconnect structures and methods for forming same |
| KR102747527B1 (ko) * | 2018-06-30 | 2024-12-31 | 램 리써치 코포레이션 | 라이너 패시베이션 및 접착 개선을 위한 금속 라이너의 징케이팅 (zincating) 및 도핑 |
| JP2021144969A (ja) * | 2020-03-10 | 2021-09-24 | キオクシア株式会社 | 磁気記憶装置 |
| US11107731B1 (en) | 2020-03-30 | 2021-08-31 | International Business Machines Corporation | Self-aligned repaired top via |
| CN114373714A (zh) * | 2020-10-15 | 2022-04-19 | 长鑫存储技术有限公司 | 半导体结构的制作方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8303298D0 (en) * | 1983-02-07 | 1983-03-09 | Gen Electric Co Plc | Temperature sensors |
| NL8800857A (nl) * | 1988-04-05 | 1989-11-01 | Philips Nv | Inrichting en werkwijze voor het vervaardigen van een inrichting. |
| NL8802873A (nl) * | 1988-11-22 | 1990-06-18 | Philips Nv | Zachtmagnetische multilaagfilm en magneetkop voorzien van een dergelijke zachtmagnetische multilaagfilm. |
| DE69027070T2 (de) * | 1989-02-28 | 1996-10-24 | Canon Kk | Nicht-monokristalliner stoff enhaltend iridium, tantal und aluminium |
| JP2757797B2 (ja) * | 1994-11-10 | 1998-05-25 | 日本電気株式会社 | 配線層形成方法およびその装置 |
| US6181012B1 (en) * | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
| US6294836B1 (en) * | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
| US6812143B2 (en) * | 2002-04-26 | 2004-11-02 | International Business Machines Corporation | Process of forming copper structures |
| US6787912B2 (en) * | 2002-04-26 | 2004-09-07 | International Business Machines Corporation | Barrier material for copper structures |
| WO2004077519A2 (en) * | 2003-02-27 | 2004-09-10 | Mukundan Narasimhan | Dielectric barrier layer films |
| US20050263891A1 (en) * | 2004-05-28 | 2005-12-01 | Bih-Huey Lee | Diffusion barrier for damascene structures |
| JP4832807B2 (ja) * | 2004-06-10 | 2011-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20060251872A1 (en) * | 2005-05-05 | 2006-11-09 | Wang Jenn Y | Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof |
| US7999330B2 (en) * | 2005-06-24 | 2011-08-16 | Micron Technology, Inc. | Dynamic random access memory device and electronic systems |
| US7727888B2 (en) * | 2005-08-31 | 2010-06-01 | International Business Machines Corporation | Interconnect structure and method for forming the same |
| JP4860685B2 (ja) * | 2006-02-22 | 2012-01-25 | Ｊｘ日鉱日石金属株式会社 | 高融点金属からなる焼結体スパッタリングターゲット |
| JP5285898B2 (ja) * | 2007-12-17 | 2013-09-11 | Ｊｘ日鉱日石金属株式会社 | 銅拡散防止用バリア膜、同バリア膜の形成方法、ダマシン銅配線用シード層の形成方法及びダマシン銅配線を備えた半導体ウェハー |
-
2009
- 2009-06-03 US US12/477,389 patent/US7951708B2/en not_active Expired - Fee Related
-
2010
- 2010-05-18 KR KR1020100046447A patent/KR101581050B1/ko not_active Expired - Fee Related
- 2010-05-31 JP JP2010123865A patent/JP5444124B2/ja not_active Expired - Fee Related
- 2010-06-03 CN CN2010101960734A patent/CN101908501A/zh active Pending
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