JP2008503073A5 - - Google Patents
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- Publication number
- JP2008503073A5 JP2008503073A5 JP2007515772A JP2007515772A JP2008503073A5 JP 2008503073 A5 JP2008503073 A5 JP 2008503073A5 JP 2007515772 A JP2007515772 A JP 2007515772A JP 2007515772 A JP2007515772 A JP 2007515772A JP 2008503073 A5 JP2008503073 A5 JP 2008503073A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacturing
- layer structure
- sacrificial
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims 17
- 238000000034 method Methods 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 7
- 239000000463 material Substances 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 2
- 238000010292 electrical insulation Methods 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004029519A DE102004029519A1 (de) | 2004-06-18 | 2004-06-18 | Verfahren zum Herstellen einer Schicht-Anordnung |
| PCT/DE2005/001067 WO2005124854A1 (de) | 2004-06-18 | 2005-06-15 | Verfahren zum herstellen einer schicht-anordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008503073A JP2008503073A (ja) | 2008-01-31 |
| JP2008503073A5 true JP2008503073A5 (enExample) | 2010-03-18 |
Family
ID=34972419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515772A Pending JP2008503073A (ja) | 2004-06-18 | 2005-06-15 | 層構造の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7795135B2 (enExample) |
| JP (1) | JP2008503073A (enExample) |
| CN (1) | CN101006577A (enExample) |
| DE (1) | DE102004029519A1 (enExample) |
| WO (1) | WO2005124854A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004029519A1 (de) * | 2004-06-18 | 2006-01-12 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schicht-Anordnung |
| KR101732975B1 (ko) * | 2010-12-03 | 2017-05-08 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| CN103969966B (zh) * | 2014-05-15 | 2015-04-15 | 京东方科技集团股份有限公司 | 一种光刻胶的去除方法 |
| JP6816964B2 (ja) * | 2016-03-10 | 2021-01-20 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
| DE102017216835B9 (de) * | 2017-09-22 | 2022-06-30 | Infineon Technologies Ag | MEMS-Bauelement und Herstellungsverfahren für ein MEMS-Bauelement |
| DE102020201567A1 (de) | 2020-02-08 | 2021-08-12 | Robert Bosch Gesellschaft mit beschränkter Haftung | Herstellungsverfahren für ein mikromechanisches Bauelement und entsprechendes mikromechanisches Bauelement |
| US12062547B2 (en) * | 2021-09-08 | 2024-08-13 | Nanya Technology Corporation | Method of fabricating semiconductor device and patterning semiconductor structure |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943539A (en) * | 1989-05-09 | 1990-07-24 | Motorola, Inc. | Process for making a multilayer metallization structure |
| JPH04218946A (ja) * | 1990-08-03 | 1992-08-10 | Oki Electric Ind Co Ltd | スルーホールの形成方法 |
| JPH04259241A (ja) * | 1991-02-14 | 1992-09-14 | Olympus Optical Co Ltd | 半導体装置の製造方法 |
| JPH05190688A (ja) * | 1992-01-14 | 1993-07-30 | Matsushita Electric Ind Co Ltd | 多層配線の形成方法 |
| US5817574A (en) * | 1993-12-29 | 1998-10-06 | Intel Corporation | Method of forming a high surface area interconnection structure |
| US5451543A (en) * | 1994-04-25 | 1995-09-19 | Motorola, Inc. | Straight sidewall profile contact opening to underlying interconnect and method for making the same |
| US5686356A (en) * | 1994-09-30 | 1997-11-11 | Texas Instruments Incorporated | Conductor reticulation for improved device planarity |
| JP2959619B2 (ja) * | 1995-03-30 | 1999-10-06 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH09129732A (ja) * | 1995-10-31 | 1997-05-16 | Nec Corp | 半導体装置の製造方法 |
| KR100214467B1 (ko) * | 1995-12-29 | 1999-08-02 | 구본준 | 반도체소자의 배선구조 형성방법 |
| US5700737A (en) * | 1996-02-26 | 1997-12-23 | Taiwan Semiconductor Manufactured Company Ltd. | PECVD silicon nitride for etch stop mask and ozone TEOS pattern sensitivity elimination |
| JP4114215B2 (ja) * | 1997-04-25 | 2008-07-09 | 沖電気工業株式会社 | コンタクトホールの形成方法 |
| US6015751A (en) * | 1998-04-06 | 2000-01-18 | Taiwan Semiconductor Manufacturing Company | Self-aligned connection to underlayer metal lines through unlanded via holes |
| JP4201421B2 (ja) * | 1999-02-17 | 2008-12-24 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2001127151A (ja) | 1999-10-26 | 2001-05-11 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| DE10140468B4 (de) * | 2001-08-17 | 2006-01-05 | Infineon Technologies Ag | Verfahren zur Erzeugung von Kontaktlöchern auf einer Metallisierungsstruktur |
| US20030201121A1 (en) * | 2002-04-25 | 2003-10-30 | Pei-Ren Jeng | Method of solving the unlanded phenomenon of the via etch |
| JP2004079805A (ja) * | 2002-08-19 | 2004-03-11 | Seiko Epson Corp | 配線、配線の形成方法、半導体装置及びその製造方法 |
| US20040048203A1 (en) * | 2002-09-10 | 2004-03-11 | Hitachi, Ltd. | Method of manufacturing a semiconductor device for high speed operation and low power consumption |
| US7176571B2 (en) * | 2004-01-08 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company | Nitride barrier layer to prevent metal (Cu) leakage issue in a dual damascene structure |
| US7232762B2 (en) * | 2004-06-16 | 2007-06-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an improved low power SRAM contact |
| DE102004029519A1 (de) * | 2004-06-18 | 2006-01-12 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schicht-Anordnung |
| US7259083B2 (en) * | 2004-10-22 | 2007-08-21 | Lsi Corporation | Local interconnect manufacturing process |
| US20080073724A1 (en) * | 2006-09-22 | 2008-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double layer etch stop layer structure for advanced semiconductor processing technology |
-
2004
- 2004-06-18 DE DE102004029519A patent/DE102004029519A1/de not_active Ceased
-
2005
- 2005-06-15 JP JP2007515772A patent/JP2008503073A/ja active Pending
- 2005-06-15 CN CNA2005800284267A patent/CN101006577A/zh active Pending
- 2005-06-15 WO PCT/DE2005/001067 patent/WO2005124854A1/de not_active Ceased
-
2006
- 2006-12-14 US US11/639,393 patent/US7795135B2/en active Active
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