Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
  • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
  • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
  • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
  • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
  • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors

Definitions

• the invention relates to a method for producing a layer arrangement.
• Vias i.e. Trenches oriented vertically to a substrate surface are often produced using a lithography and a plasma etching method and can then be filled with electrically conductive material. Between the material to be contacted
• Conductor of a metallization level and the material of a via can be provided with an adhesive, barrier or seed layer (liner layer), by means of which a contact between the two materials to be coupled can be mediated or an undesired diffusion of material of the via filling in that of the conductor track (or vice versa) can be avoided.
• an adhesive, barrier or seed layer liner layer
• Design rules for designing the integrated circuit are taken into account by regulations which, for example, have larger contact areas for vias than the nominally required Define to ensure later contact between the conductor track and the via filled with electrically conductive material.
• the layout takes into account larger metal areas on which the vias land, including the described adjustment error. This is not a process weakness, but is due to the processing. A tolerance range must be defined for all production steps, within which a physical quantity must lie in order to be able to deliver the microelectronic component to be manufactured correctly.
• a via bottom can have a diameter of 200 nm.
• Such a via is to be positioned, for example, on an area of 240nm x 240nm (edge lengths). In this case, a maximum offset of 20nm per edge would be permissible.
• FIG. 1A shows a layout top view 110 with a conductor track 100 which is to be contacted by means of a via 101.
• the diameter of the vias 101 is larger than the width of the conductor track 100, so that in the event of a process-related lateral offset between the focal points of the conductor track 100 and the vias 101, contacting of the conductor track 100 is still ensured by the via 101.
• a second layout top view 120 which is shown in FIG. 1B, the diameter of a via 101 and a conductor track 100 are of the same size, but the via 101 is partially arranged next to the conductor track 100 due to an edge position error in the via exposure, which can lead to deteriorated electrical contact.
• a third layout top view 130 which is shown in FIG. IC, again shows a conductor track 100 and a via 101, the via 101 coming to lie next to the conductor track 100 despite a local path widening in the form of a landing pad 102, due to the adjustment tolerance of the photo technique when forming the vias 101.
• an aluminum layer 201 is applied to a substrate (not shown) and, depending on the desired structural fineness, an ARC layer ("anti reflective coating") is also used.
• Photoresist material is subsequently formed on the aluminum layer 201, which is patterned into a photoresist mask 202 using a lithography and an etching method.
• the aluminum layer 201 is structured starting from the layer sequence 200 shown in FIG. 2A using the photoresist mask 202 in such a way that aluminum conductor tracks 211 are formed.
• a hard mask can be used to structure the aluminum conductor tracks 211.
• the photoresist 202 is then removed after the structure has been transferred into the hard mask.
• the hard mask then replaces the photoresist mask 202.
• a photoresist remainder 212 that remains after the etching is shown on each of the aluminum conductor tracks 211 and is subsequently removed by means of a stripping process.
• a silicon oxide layer 221 which covers the aluminum conductor tracks 211, is deposited after removal of the photoresist residue 212.
• photoresist material is deposited on the layer sequence 220 and using a lithography and an etching process for forming a photoresist mask 231.
• the layer sequence 230 is subjected to an etching process using the photoresist mask 231 as an etching mask, as a result of which material of the silicon oxide layer 221 is removed and trenches 242 are formed. Residual photoresist areas 241 remain on the surface of the layer sequence 240.
• the layer sequence 250 shown in FIG. 2F is obtained if, starting from the layer sequence 240, the method for etching the silicon oxide layer 221 is continued. At a certain point in the process during this etching process, the depth of the trenches 242 is so large that
• the layer sequence 250 according to this process state is shown in FIG. 2F, where the via etching has already arrived on the structured metal track 211.
• the etching method described with reference to FIGS. 2E and 2F is continued.
• an overetch is required, ie an etching deeper than to the surface areas of the conductor tracks 221.
• This overetching is carried out so that the vias on the wafer can later be reliably connected to conductor tracks 211.
• the duration of the overetching is typically 10% to 30% of the total via etching time.
• the result of the overetching process is shown in layer sequence 260. Although are the surface areas of the conductor tracks 211 are safely exposed, which enables contacting with via material in a subsequent method step, however, as a result of the overetching, as shown in FIG exposed sections of the conductor tracks 211.
• the etching thus passes the metal tracks 211 on both sides and produces narrow gaps 261.
• the depth of the gaps 261 and thus their aspect ratio is dependent on the local thickness of the dielectric layer 211 and can vary across the wafer.
• These narrow gaps 261 are the cause of various difficulties that lead to serious reliability problems. Cleaning or removal of polymer material in the narrow gaps 261 is only incomplete or not possible at all. This leads to problems in a subsequent liner deposition and / or metal filling to form the vias.
• the deposition of adhesive, seed or barrier layers (called liners) is only incomplete when narrow gaps 261 occur. Since such a deposition generally also takes place using physical methods, the locally present aspect ratio of the narrow columns 261 plays an important role. The higher the aspect ratio, the smaller the edge coverage with the respective layer. Thus, cavities can arise in the area of the narrow gaps 261 during the metal filling, or individual vias are filled at all or only poorly. This leads to an unreliable contact between metal tracks 211 and
• Fig.2G filled with tungsten material to form tungsten vias 271. As described above, this
• Narrow gaps 261 formed with overetching and locally greatly increased aspect ratio are not possible. This leads to
• the layer sequence 280 shown in FIG. 21 shows a state during the etching of the silicon oxide layer 221 in which the etching front has reached a first level 282.
• a layer sequence 285 is obtained if, starting from the layer sequence 280, the etching process for etching the first silicon oxide layer 221 is continued. The etched front then extends to a second plane 283.
• FIG. 2K Since a certain overetching is technologically necessary to ensure the exposure of all surfaces of all aluminum conductor tracks 211, the case shown in FIG. 2K occurs according to the prior art, in which the etching front has penetrated to a third level 284 in a layer sequence 290 , so that undesired narrow gaps 261 occur on the lateral areas of the exposed aluminum conductor track 211.
• the picture is similar to that for Fig. 1A.
• [1] describes a method for producing contact areas on a metallization structure, a dielectric layer being applied to conductor tracks which are provided with remnants of a hard mask layer.
• Contact holes are etched through the dielectric layer when the etching ends when the hard mask layer is reached.
• the hard mask layer is then etched selectively with respect to the dielectric layer, so that the contact hole is prevented from penetrating into the space between adjacent conductor tracks, thereby reducing the risk of short circuits.
• [2] describes a method for conformally applying an etching stop layer to a structured metallization level with a plurality of conductor tracks, the contact hole being etched in the context of the contact hole etching until all areas of the etching stop layer are exposed below the contact hole and thus also those alongside the surface areas of the etching stop layer located on the conductor tracks.
• the invention is based in particular on the problem of providing a method for producing a layer arrangement in which improved contacting between different electrically conductive structures is made possible.
• the problem is solved by a method of making one
• an electrically conductive layer is formed and structured on a substrate and subsequently a sacrificial layer is formed on at least part of the electrically conductive layer.
• An electrically insulating layer is formed on the electrically conductive layer and on the sacrificial layer.
• the electrically insulating layer is structured in such a way that surface areas of the sacrificial layer are exposed.
• the exposed areas of the sacrificial layer are removed, whereby surface areas of the electrically conductive layer are exposed.
• the exposed surface areas of the structured electrically conductive layer are covered with a structure made of electrically conductive material.
• a basic idea of the invention is to be seen in the fact that between an electrically conductive layer, which in a structured state e.g. Can form conductor tracks of an integrated circuit, and an electrically insulating layer deposited thereon as an intermetallic dielectric, a sacrificial layer for their
• this problem is avoided by the provision of the sacrificial layer, since when the sacrificial layer is used as an etching stop layer and / or as a layer which can be etched sufficiently quickly due to the different materials and thus etching rates of the electrically insulating layer on the one hand and the sacrificial layer on the other hand, the etching front above all individual areas can first penetrate to the sacrificial layer. If the etching front has reached the sacrificial layer on the individual regions of the structured electrically conductive layer, the sacrificial layer on all individual regions of the structured electrically conductive layer is removed using an additional etching method. It is advantageous that the
• Sacrificial layer is set up with regard to the choice of material and / or thickness and / or etching properties in such a way that, when the sacrificial layer is etched, the etching front reaches all individual areas of the structured electrically conductive layer approximately simultaneously, so that overetching and the resulting formation of undesirable narrow gaps is avoided.
• This can be achieved, in particular, if the Etching rate for removing the sacrificial layer is set greater than for the electrically insulating layer and / or if the thickness of the sacrificial layer is provided to be sufficiently small and / or uniform. Then the duration of the etching of the sacrificial layer is kept short. This etching can be done by everyone
• the sacrificial layer ensures that even with locally different layer thicknesses of the electrically insulating layer, first of all components of the structured electrically conductive layer
• the electrically insulating material formed above is removed to the surface of the sacrificial layer.
• a very specific intermediate processing state can thus be defined as a result of the provision of the sacrificial layer, in which the etched front has reached all surface areas of the sacrificial layer.
• the sacrificial layer can be provided, for example, in a particularly thin manner or made of a material with a particularly high etching rate, so that after reaching the sacrificial layer on all components of the structured electrically conductive layer, the stop layer can be removed quickly.
• the overetching that was required for quality assurance in accordance with the prior art can be considerably shortened or avoided entirely.
• the etching of the electrically insulating layer and the sacrificial layer is carried out to form
• Trenches (which are used for later filling with material of a
• Structure of electrically conductive material are provided, e.g. as vias) laterally self-adjusted, so that according to the
• a basic idea of the invention is based on the material of the sacrificial layer which can be provided in an optimized manner and which can be selected such that the sacrificial layer can serve as a stop layer during the etching and can then be removed particularly quickly and without excessive overetching.
• An important aspect of the invention is therefore to be seen in the use and combination of different etching methods and different materials, the method being able to be optimized by the selection of suitable etching parameters.
• a suitable additional or sacrificial layer is thus present on the material of the structured electrically conductive layer to be contacted, which is structured together with the metal etching for structuring the electrically conductive layer.
• the parameters of the etching to expose surface areas of the structured electrically conductive layer can be set such that the sacrificial or additional layer is etched significantly faster than the surrounding material of the electrically insulating layer ("inter layer dielectric"). Starting from a state in which the via etching front has just reached the additional layer, the additional layer is etched more rapidly in the further course of the etching, so that the etching front remains in the electrically insulating layer.
• a brief overetching process can optionally be carried out so that the etching stage present in the dielectric layer is pulled down. In favorable cases, the etching front then closes with the after the overetch
• the sacrificial layer can be used as an etching stop layer and / or as a quickly etchable layer.
• the sacrificial layer When the sacrificial layer is used as an etching stop layer, material of the electrically insulating layer above the structured electrically conductive layer and above the sacrificial layer is first removed, the material removal from the etching process ending when the sacrificial layer is reached.
• material of the electrically insulating layer located next to the sacrificial layer is removed, the one below it the surface of the Sacrificial layer is arranged.
• the thickness of the sacrificial layer is chosen to be at least as large as a thickness range (ie one
• the sacrificial layer When the sacrificial layer is used as a rapidly etchable layer, the sacrificial layer can be provided as a layer which has a significantly higher etching rate than the electrically insulating layer. In this scenario too, it is advantageous if, in particular in the event of a (undesirable, but not always completely avoidable) lateral offset of the etching mask, i.e.
• the thickness of the sacrificial layer is selected to be at least as large as a thickness range (ie a range of variation in the thickness) of the electrically insulating layer, since then no undesired narrow gap is produced in the case of such a lateral displacement (see Fig.7A to Fig.7C).
• the electrically conductive layer is first formed and the sacrificial layer is formed on the electrically conductive layer.
• the electrically conductive layer and the Sacrificial layer structured together.
• the electrically conductive layer is initially flat and the surface is exposed on its exposed surface
• Sacrificial layer formed The two layers arranged one above the other are then subjected to a lithography and an etching process, so that little
• the electrically conductive layer is first formed and structured.
• the sacrificial layer is subsequently formed on the electrically conductive layer.
• material of the sacrificial layer can also be formed between adjacent regions of the structured electrically conductive layer, which poses no problem for the further course of the processing.
• the side walls of the structured areas of the electrically conductive layer can remain free of material of the sacrificial layer in the process described.
• the sacrificial layer can serve as a stop layer.
• the etching front is prevented from removing the sacrificial layer when the electrically insulating layer reaches the surface of the sacrificial layer, since this is prevented from being etched in relation to the etching parameters for etching the electrically insulating layer (e.g. etchant composition).
• the etching parameters for etching the electrically insulating layer e.g. etchant composition
• the etched front safely all surface areas of the structured sacrificial layer without first removing it, ie the sacrificial layer surface stops it Etching process.
• Etching process After modifying the etching parameters (e.g.
• Change in the etchant composition then begins simultaneously to remove all desired areas of the structured sacrificial layer.
• the sacrificial layer can be removed at a higher rate than the electrically insulating layer. This configuration enables the sacrificial layer to have a higher
• Etching rate or rate i.e. a higher material removal per time, can be removed than the electrically insulating layer.
• an etching is used when using an etching in which hydrogen, oxygen or carbon monoxide material is added as an etching agent or the concentration of which is increased of the silicon nitride sacrificial layer take place much faster than an etching of the electrically insulating silicon oxide layer. For example, when increasing the oxygen concentration during etching,
• Etching rate of silicon oxide can be successively reduced, which does not occur or only to a much weaker extent with a silicon nitride layer.
• the etching speed of the different layers can be set precisely and the formation of narrow gaps can be greatly reduced. Poor electrical contact between conductor tracks and vias due to poor filling of narrow gaps with a locally high aspect ratio is thus avoided according to the invention. Unwanted voids in the layer arrangement, quality problems and bad ones electrical contacts are in the invention
• the sacrificial layer and the electrically insulating layer are preferably removed using an etching method which is set up in such a way that the sacrificial layer is removed at a higher etching rate than the electrically insulating layer.
• Tetrafluoromethane (CF 4 ), trifluoromethane (CHF 3 ), nitrogen (N 2 ) and / or argon (Ar) can be used as the etchant in the etching process.
• the etch rate can be adjusted by adjusting the concentration of oxygen (0 2 ), hydrogen (H 2 ) and / or carbon monoxide (CO) in the etchant, or by lowering the temperature of the wafer (the nitride etch rate increases at low temperature) , the oxide etching rate drops slightly at a higher temperature).
• the sacrificial layer can have a smaller, preferably a substantially smaller thickness than the electrically insulating layer, preferably less than half, more preferably less than a fifth, even more preferably less than a tenth of the thickness of the electrically insulating layer.
• a liner layer can be formed between the electrically conductive layer and the structure made of electrically conductive material.
• Such a liner layer as a seed, adhesive or barrier layer serves to establish good mechanical and electrical contact between the structured electrically conductive layer (for example made of aluminum) and the structure made of electrically conductive material (for example made of tungsten). It can also be avoided with a liner layer that material of the structured electrically conductive layer diffuses into material of the structure made of electrically conductive material or vice versa.
• the liner layer can be formed after the surface areas of the structured electrically conductive layer have been exposed.
• the surface of a trench of the layer arrangement which is formed after the surface areas of the structured electrically conductive layer have been exposed, can be covered with the liner material having a small thickness of typically 45 nm.
• the liner material having a small thickness of typically 45 nm.
• Liner layer are generated between the formation of the electrically conductive layer and the formation of the sacrificial layer, so that after removal of the sacrificial layer, the electrically conductive layer is already covered with the liner layer.
• the structuring of the electrically conductive layer and the sacrificial layer together and / or the structuring of the electrically insulating layer can be carried out using a lithography and an etching method.
• the electrically conductive layer and / or the sacrificial layer can be formed using a conformal deposition process, for example by means of a CVD process ("Chemical Vapor Deposition ”) or an ALD process (" Atomic Layer
• the layer arrangement can be formed as an integrated circuit.
• the layer arrangement can be formed on and / or in a semiconductor material (e.g. silicon wafer or silicon chip).
• the layer arrangement can be formed in the metallization level of an integrated circuit ("end of the line").
• the electrically conductive layer can also be structured to form conductor tracks, and the structure made of electrically conductive material can be produced to form vias.
• the electrically conductive layer and / or the structure made of electrically conductive material can be formed from aluminum and / or tungsten.
• aluminum material is a suitable material for the electrically conductive layer as conductor tracks.
• tungsten material is a good choice.
• the sacrificial layer can be formed from silicon nitride and / or from silicon oxynitride.
• the electrically insulating layer can be formed from silicon oxide.
• the material combination of a nitrogen-containing sacrificial layer and an electrically insulating layer made of silicon oxide is a particularly favorable combination of materials which, with a suitable etchant, leads to rapid etching of the sacrificial layer and slower etching of the electrically insulating layer.
• the liner layer can be formed from titanium nitride (TiN).
• FIGS. 3A to 3H layer sequences at different times during a method for producing a layer arrangement according to a first exemplary embodiment of the invention
• FIGS. 4A to 4L layer sequences at different times during a method for producing a layer arrangement according to a second exemplary embodiment of the invention
• FIGS. 5A to 5C layer sequences at different times during a method for producing a layer arrangement according to the invention
• FIGS. 6A, 6B layer sequences to illustrate the use of the sacrificial layer according to the invention as an etching stop layer
• FIGS. 7A to 7C layer sequences to illustrate the use of the sacrificial layer according to the invention as a quickly etchable layer.
• FIGS. 3A to 3H A method for producing a layer arrangement according to a first exemplary embodiment of the invention is described below with reference to FIGS. 3A to 3H.
• an aluminum layer 301 is formed on a silicon substrate (not shown) using a conformal one
• a silicon nitride sacrificial layer 302 is deposited conformally on the aluminum layer 301 using a CVD method.
• a sacrificial layer can also be formed from silicon oxynitride material.
• Photoresist material is formed and patterned into a photoresist mask 303 using a lithography and an etching method.
• the aluminum layer 301 and the silicon nitride sacrificial layer 302 are structured together using an etching method, ie in a related method step.
• aluminum conductor tracks 311 are formed, one of a plurality of sacrificial layer regions 312 being arranged on each aluminum conductor track 311, covered by a photoresist residue 313 which has remained on the surface of the layer sequence 310 after the etching process.
• the photoresist residue 313 is subsequently removed using a stripping process.
• Silicon oxide layer 321 is formed on the layer sequence 310 using a CVD process ("Chemical Vapor Deposition").
• a photoresist layer is formed on the layer sequence 320 and patterned into a photoresist mask 331 using a lithography and an etching method.
• the layer sequence 330 is subjected to an etching method such that material of the silicon oxide layer 321 is removed using the etching mask 331 until the etching front reaches the surface of the Sacrificial layer areas 312 has reached.
• the sacrificial layer regions 312 serve as a stop layer of the etching process. Due to this etching process, trenches 342 are formed in the silicon oxide layer 321 and surface areas of the sacrificial layer regions 312 exposed.
• sacrificial layer regions 312 ensures that, even with locally different thicknesses of the silicon oxide layer 321 in regions of different trenches 342, etching takes place only up to the surface of the thin sacrificial layer series 312.
• etching takes place only up to the surface of the thin sacrificial layer series 312.
• the use of the sacrificial layer according to the invention as an etch stop layer is only one of several variants.
• a particularly high etching speed of the material of the sacrificial layer can alternatively or additionally be used (see, for example, FIGS. 7A to 7C).
• the sacrificial layer regions 312 in all trenches 342 are removed using another etching method, which is set up for etching the material of the sacrificial layer regions 312, whereby surface regions of the aluminum Track 311 are exposed.
• the material of the sacrificial layer regions 312 (silicon nitride) has such material properties that the etching process removes this material with a very high etching rate, ie very quickly.
• the ratio of the etching rates of silicon nitride to silicon oxide can be increased, for example, by adding an oxygen component to the etchant.
• the thickness of the sacrificial layer regions 312 is chosen to be so small that, in combination with the increased etching rate, a particularly rapid removal of these regions is ensured. This leads to the etching front reaching the surface areas of the different conductor tracks 311 approximately simultaneously and after a short processing time, as a result of which lengthy undercutting, which is necessary according to the prior art, is avoided.
• the etching method described with reference to FIG. 3F is continued for a short time, ie possibly a slight underetching is accepted in order to ensure that really all surface areas of the
• a liner layer 361 made of titanium nitride material is formed in each of the trenches 342 using a deposition process, with a thickness of approximately 45 nm, with which in particular the exposed surface areas of the aluminum conductor track 311 covered with the liner material as a barrier layer for coupling the aluminum conductor track 311 with subsequently applied tungsten material from Vias.
• tungsten material is filled into the trenches 342, with which tungsten vias 371 are formed.
• the tungsten vias 371 are electrically and mechanically well coupled to the aluminum conductor track 311 by means of the liner layer 361. Because of the avoidance of narrow gaps in boundary areas between the lateral sections of the aluminum conductor track 311 and the adjacent material of the silicon oxide layer 321, electrical coupling problems between tungsten vias 371 and aluminum conductor track 311 are reliably avoided, as a result of which a layer arrangement 370 with a high quality and a good electrical coupling is possible.
• FIGS. 4A to 4L Refer is made to FIGS. 4A to 4L
• an aluminum layer 301 is formed on a silicon substrate 401.
• a photoresist mask 303 is applied to the surface of the layer sequence 400.
• the aluminum layer 301 is structured by means of the photoresist mask 303, as a result of which aluminum conductor tracks 311 are formed. Photoresist residues 313 can be seen on the surface of the aluminum conductor tracks 311.
• a hard mask can be used to structure the aluminum layer 301.
• the photoresist 303 is then removed after the structure has been transferred into the hard mask.
• the hard mask then replaces the photoresist mask 303.
• the photoresist residues 313 are removed (for example by means of a stripping method or by means of an etching method).
• sacrificial layer regions 441 are formed on the layer sequence 430, as a result of which, according to FIG. 4E, horizontal surface regions of the layer sequence 430 with sacrificial layer Areas 441 are covered.
• the sacrificial layer regions 441 can also be referred to as adjust liners.
• a silicon oxide layer 321 is deposited as an interlayer dielectric (ILD).
• ILD interlayer dielectric
• a photoresist mask 331 is formed on the surface of the layer sequence 450.
• trenches 342 are formed in the silicon oxide layer 321 by means of etching using the photoresist mask 331. According to the state of the etching method shown in FIG. 4H, the etching front has not yet reached the surface of the sacrificial layer regions 441.
• the etching of the silicon oxide layer 321 is continued, wherein according to FIG. 41 the etching front has just reached the surface of the sacrificial layer regions 441 on the upper end sections of the aluminum conductor track 311.
• the exposed sacrificial layer regions 441 are subjected to an etching process, the etching parameters being set in such a way that the exposed sacrificial layer regions 441 are etched much faster than the exposed material of the silicon oxide Layer 321.
• the etching parameters being set in such a way that the exposed sacrificial layer regions 441 are etched much faster than the exposed material of the silicon oxide Layer 321.
• Portions at transition regions between the material 321 and the sacrificial layer regions 441 to be etched back are obtained. Due to the etching of the exposed sacrificial layer regions 441, sacrificial layer residues 476 are generated.
• the etching process for etching the exposed sacrificial layer regions 441 or for etching the sacrificial layer residues 476 is continued. Due to the different etching speeds of the material of the sacrificial layer on the one hand and the silicon oxide layer 321 on the other hand, slightly stepped sections are obtained at edges between the conductor tracks 311 and the silicon oxide layer 321, but not the undesirable narrow gaps as in the prior art.
• the trenches 342 are filled with tungsten material, as a result of which tungsten vias 371 are formed.
• a first level 501, a second level 502 and a third level 503 of the etching front for etching the sacrificial layer regions 441 are shown in the layer sequences 500 to 520 from FIGS. 5A to 5C.
• the etching process has progressed to such an extent that the surface regions of the Sacrificial layer regions 441 on conductor tracks 311 are just exposed.
• the layer sequence 510 shown in FIG. 5B is obtained, which essentially corresponds to the layer sequence 475 shown in FIG. 4J.
• the etched front has penetrated as far as the sacrificial layer regions 441 up to the second level 502, so that only sacrificial layer residues 476 are present. Since the etching parameters are selected such that the material of the sacrificial layer regions 441 is etched significantly faster than the material of the silicon oxide layer 321, step-like silicon oxide structures form at edge sections of the sacrificial layer residues 476, but not undesired narrow gaps.
• the layer sequence 520 shown in FIG. 5C is obtained, in which the etching front has reached the third level 503.
• This state essentially corresponds to the layer sequence 480 shown in FIG. 4K.
• the surfaces of the conductor tracks 311 are exposed, and the material of the sacrificial layer regions 441 is completely removed from the surfaces of the conductor tracks 311. Material of the sacrificial layer regions 441 between adjacent conductor tracks remains in the layer sequence 520 and has no negative influence on the process management or functionality of the layer sequence 520.
• the surface areas of the conductor tracks 311 are reliably exposed, with narrow gaps at the boundary areas between the conductor tracks 311 and the electrically insulating
• Silicon oxide layer 321 are avoided.
• FIG. 6A shows a layer sequence 600 with a first aluminum conductor track 601 and with a second aluminum conductor track 602, a first sacrificial layer region 603 on the first aluminum conductor track 601 and a second sacrificial layer on the second aluminum conductor track 602 Area 604 is formed.
• Components 601 to 604 are covered by a silicon oxide layer 605, the thickness of which is not completely homogeneous, but rather has a thickness range 606.
• a layer sequence 610 is shown in FIG. 6B, in which a first trench 611 for exposing the first sacrificial layer region 603 and a second trench 612 for exposing the second sacrificial layer region 604 are formed using an etching method. Due to the thickness range 606 and an undesired lateral etching mask offset, the etching front has 603 on the side of the first sacrificial layer region
• the thickness of the sacrificial layer ranges 603, 604 is selected to be at least as large as the thickness range 606 (ie a fluctuation range in the thickness) of the silicon oxide layer 605, since then no undesirable narrow gap occurs with such a lateral offset is produced.
• the etching front reaches the sacrificial layer at the thickest point of the silicon oxide layer 605 (ie above the second sacrificial layer region 604), it is not yet completely past the first sacrificial layer region 603 at the thinnest point of the silicon oxide layer 605.
• FIG. 7A shows a layer sequence 700 with a first aluminum conductor 701 and with a second aluminum conductor 702, wherein on the first aluminum Conductor 701 a first sacrificial layer area 703 and a second on the second aluminum conductor 702
• Sacrificial layer area 704 is formed. Components 701 to
• silicon oxide layer 704 are covered by a silicon oxide layer 705, the thickness of which is not completely homogeneous, but one
• the layer sequence 700 is using a
• Silicon oxide layer 705 in this area is not yet so deep that the second sacrificial layer area 704 would have already been exposed.
• the etching front has the sacrificial layer just at the thinnest point of the silicon oxide layer 705, i.e. reached at the first sacrificial layer region 703.
• 7B shows a layer sequence 710 at a later point in time during processing. 7B, the etched front has reached the second sacrificial layer region 704.
• 7C shows a layer sequence 720 at an even later point in time during processing.
• the etch front has also removed an exposed portion of the second sacrificial layer region 704, near which region the silicon oxide layer 705 has the greatest thickness. Due to the high etching rate of the material of the sacrificial layer and the substantially lower etching rate of the silicon oxide layer 705, no troublesome narrow gaps are generated. this applies in particular if the vertical thickness of the sacrificial layer regions 703, 704 is at least as large as the thickness range 706.

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• 2004
  • 2004-06-18 DE DE102004029519A patent/DE102004029519A1/de not_active Ceased
• 2005
  • 2005-06-15 WO PCT/DE2005/001067 patent/WO2005124854A1/de not_active Ceased
  • 2005-06-15 CN CNA2005800284267A patent/CN101006577A/zh active Pending
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• 2006
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