JP2020507207A5 - - Google Patents
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- Publication number
- JP2020507207A5 JP2020507207A5 JP2019539226A JP2019539226A JP2020507207A5 JP 2020507207 A5 JP2020507207 A5 JP 2020507207A5 JP 2019539226 A JP2019539226 A JP 2019539226A JP 2019539226 A JP2019539226 A JP 2019539226A JP 2020507207 A5 JP2020507207 A5 JP 2020507207A5
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- layer
- containing layer
- cap layer
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 50
- 238000000034 method Methods 0.000 claims 42
- 229910052697 platinum Inorganic materials 0.000 claims 25
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 claims 8
- 229910003446 platinum oxide Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- 230000000873 masking effect Effects 0.000 claims 4
- 238000001039 wet etching Methods 0.000 claims 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- 229910021339 platinum silicide Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000992 sputter etching Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021212952A JP7244030B2 (ja) | 2017-01-19 | 2021-12-27 | 保護キャップ層を用いるプラチナ含有薄膜のエッチング |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762448138P | 2017-01-19 | 2017-01-19 | |
| US62/448,138 | 2017-01-19 | ||
| US15/714,169 | 2017-09-25 | ||
| US15/714,169 US10504733B2 (en) | 2017-01-19 | 2017-09-25 | Etching platinum-containing thin film using protective cap layer |
| PCT/US2018/014522 WO2018136795A2 (en) | 2017-01-19 | 2018-01-19 | Etching platinum-containing thin film using protective cap layer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021212952A Division JP7244030B2 (ja) | 2017-01-19 | 2021-12-27 | 保護キャップ層を用いるプラチナ含有薄膜のエッチング |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020507207A JP2020507207A (ja) | 2020-03-05 |
| JP2020507207A5 true JP2020507207A5 (enExample) | 2021-03-04 |
| JP7007745B2 JP7007745B2 (ja) | 2022-01-25 |
Family
ID=62841748
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019539226A Active JP7007745B2 (ja) | 2017-01-19 | 2018-01-19 | 保護キャップ層を用いるプラチナ含有薄膜のエッチング |
| JP2021212952A Active JP7244030B2 (ja) | 2017-01-19 | 2021-12-27 | 保護キャップ層を用いるプラチナ含有薄膜のエッチング |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021212952A Active JP7244030B2 (ja) | 2017-01-19 | 2021-12-27 | 保護キャップ層を用いるプラチナ含有薄膜のエッチング |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US10504733B2 (enExample) |
| EP (1) | EP3571709B1 (enExample) |
| JP (2) | JP7007745B2 (enExample) |
| CN (2) | CN117153816A (enExample) |
| WO (1) | WO2018136795A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10504733B2 (en) * | 2017-01-19 | 2019-12-10 | Texas Instruments Incorporated | Etching platinum-containing thin film using protective cap layer |
| WO2019066977A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | FIRST-LEVEL THIN-LEVEL INTERCONNECTIONS DEFINED BY AUTOCATALYTIC METAL FOR LITHOGRAPHIC INTERCONNECTION HOLES |
| US11011381B2 (en) | 2018-07-27 | 2021-05-18 | Texas Instruments Incorporated | Patterning platinum by alloying and etching platinum alloy |
| JP7036001B2 (ja) * | 2018-12-28 | 2022-03-15 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US11990369B2 (en) | 2021-08-20 | 2024-05-21 | Applied Materials, Inc. | Selective patterning with molecular layer deposition |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4864378A (en) * | 1987-10-21 | 1989-09-05 | Massachusetts Institute Of Technology | Schottky barrier infrared detector |
| US4804438A (en) | 1988-02-08 | 1989-02-14 | Eastman Kodak Company | Method of providing a pattern of conductive platinum silicide |
| JP3251030B2 (ja) * | 1991-05-17 | 2002-01-28 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3122579B2 (ja) | 1994-07-27 | 2001-01-09 | シャープ株式会社 | Ｐｔ膜のエッチング方法 |
| JPH1187401A (ja) * | 1997-09-05 | 1999-03-30 | Haruki Yokono | 半導体装置 |
| US6665849B2 (en) * | 1999-06-09 | 2003-12-16 | Interuniversitair Microelektronica Centrum Vzw | Method and apparatus for simulating physical fields |
| US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
| US6455403B1 (en) * | 1999-01-04 | 2002-09-24 | Taiwan Semiconductor Manufacturing Company | Shallow trench contact structure to solve the problem of schottky diode leakage |
| TW463309B (en) * | 2000-08-10 | 2001-11-11 | Chartered Semiconductor Mfg | A titanium-cap/nickel (platinum) salicide process |
| US6660631B1 (en) | 2000-08-31 | 2003-12-09 | Micron Technology, Inc. | Devices containing platinum-iridium films and methods of preparing such films and devices |
| JP3591529B2 (ja) * | 2001-08-03 | 2004-11-24 | ヤマハ株式会社 | 貴金属薄膜パターンの形成方法 |
| US7825488B2 (en) * | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
| WO2004047189A1 (en) | 2002-11-16 | 2004-06-03 | Lg Innotek Co.,Ltd | Light emitting device and fabrication method thereof |
| JP2004179226A (ja) * | 2002-11-25 | 2004-06-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2005223049A (ja) * | 2004-02-04 | 2005-08-18 | Ricoh Co Ltd | 半導体装置、半導体装置の製造方法、および表示装置 |
| US7544610B2 (en) * | 2004-09-07 | 2009-06-09 | International Business Machines Corporation | Method and process for forming a self-aligned silicide contact |
| US7709859B2 (en) | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
| KR101016158B1 (ko) * | 2005-01-05 | 2011-02-17 | 신닛테츠 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
| US7344978B2 (en) * | 2005-06-15 | 2008-03-18 | United Microelectronics Corp. | Fabrication method of semiconductor device |
| JP5147330B2 (ja) * | 2006-08-25 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4946287B2 (ja) * | 2006-09-11 | 2012-06-06 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| JP5309454B2 (ja) * | 2006-10-11 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US20090127594A1 (en) | 2007-11-19 | 2009-05-21 | Advanced Micro Devices, Inc. | MOS TRANSISTORS HAVING NiPtSi CONTACT LAYERS AND METHODS FOR FABRICATING THE SAME |
| JP2009141096A (ja) * | 2007-12-06 | 2009-06-25 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP5214261B2 (ja) | 2008-01-25 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20090294871A1 (en) * | 2008-05-30 | 2009-12-03 | Advanced Micro Devices, Inc. | Semiconductor devices having rare earth metal silicide contact layers and methods for fabricating the same |
| US7803702B2 (en) | 2008-08-11 | 2010-09-28 | United Microelectronics Corp. | Method for fabricating MOS transistors |
| JP5410059B2 (ja) * | 2008-10-02 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | 半導体装置ならびに半導体装置の製造方法 |
| US7994038B2 (en) * | 2009-02-05 | 2011-08-09 | Globalfoundries Inc. | Method to reduce MOL damage on NiSi |
| US8697573B2 (en) * | 2011-11-09 | 2014-04-15 | Intermolecular, Inc. | Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating |
| US10504733B2 (en) * | 2017-01-19 | 2019-12-10 | Texas Instruments Incorporated | Etching platinum-containing thin film using protective cap layer |
-
2017
- 2017-09-25 US US15/714,169 patent/US10504733B2/en active Active
-
2018
- 2018-01-19 EP EP18741450.3A patent/EP3571709B1/en active Active
- 2018-01-19 CN CN202311109377.6A patent/CN117153816A/zh active Pending
- 2018-01-19 JP JP2019539226A patent/JP7007745B2/ja active Active
- 2018-01-19 CN CN201880015666.0A patent/CN110709966B/zh active Active
- 2018-01-19 WO PCT/US2018/014522 patent/WO2018136795A2/en not_active Ceased
-
2019
- 2019-11-19 US US16/688,060 patent/US11069530B2/en active Active
-
2021
- 2021-06-15 US US17/347,715 patent/US11929423B2/en active Active
- 2021-12-27 JP JP2021212952A patent/JP7244030B2/ja active Active
-
2024
- 2024-01-31 US US18/428,198 patent/US20240222470A1/en active Pending
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