JP2009016828A5 - - Google Patents

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Publication number
JP2009016828A5
JP2009016828A5 JP2008168937A JP2008168937A JP2009016828A5 JP 2009016828 A5 JP2009016828 A5 JP 2009016828A5 JP 2008168937 A JP2008168937 A JP 2008168937A JP 2008168937 A JP2008168937 A JP 2008168937A JP 2009016828 A5 JP2009016828 A5 JP 2009016828A5
Authority
JP
Japan
Prior art keywords
forming
interlayer insulating
insulating film
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008168937A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009016828A (ja
Filing date
Publication date
Priority claimed from KR1020070066111A external-priority patent/KR100885895B1/ko
Application filed filed Critical
Publication of JP2009016828A publication Critical patent/JP2009016828A/ja
Publication of JP2009016828A5 publication Critical patent/JP2009016828A5/ja
Pending legal-status Critical Current

Links

JP2008168937A 2007-07-02 2008-06-27 半導体装置の製造方法 Pending JP2009016828A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070066111A KR100885895B1 (ko) 2007-07-02 2007-07-02 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
JP2009016828A JP2009016828A (ja) 2009-01-22
JP2009016828A5 true JP2009016828A5 (enExample) 2011-07-14

Family

ID=40221792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008168937A Pending JP2009016828A (ja) 2007-07-02 2008-06-27 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US7972941B2 (enExample)
JP (1) JP2009016828A (enExample)
KR (1) KR100885895B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943511B2 (en) * 2009-07-17 2011-05-17 United Microelectronics Corp. Semiconductor process
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits
CN104810280A (zh) * 2014-01-27 2015-07-29 北大方正集团有限公司 半导体器件的制造方法
US11152372B2 (en) * 2020-02-25 2021-10-19 Micron Technology, Inc. Method used in forming integrated circuitry, and method used in forming memory circuitry

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774167A (ja) * 1993-06-30 1995-03-17 Kawasaki Steel Corp 半導体装置の製造方法
EP0634797B1 (en) * 1993-07-13 1999-09-22 Sony Corporation Thin film semiconductor device for active matrix panel and method of manufacturing the same
US5627089A (en) * 1993-08-02 1997-05-06 Goldstar Co., Ltd. Method for fabricating a thin film transistor using APCVD
JPH09213698A (ja) * 1996-01-31 1997-08-15 Fujitsu Ltd 配線形成方法
JP2976931B2 (ja) * 1997-06-04 1999-11-10 日本電気株式会社 半導体装置の製造方法
JPH11150084A (ja) * 1997-09-12 1999-06-02 Canon Inc 半導体装置および基板上への非晶質窒化硅素チタンの形成方法
JP2000003960A (ja) * 1998-06-12 2000-01-07 Hitachi Ltd 半導体装置及びその製造方法
JP3173597B2 (ja) * 1998-11-26 2001-06-04 日本電気株式会社 半導体装置及びその製造方法
JP3827056B2 (ja) 1999-03-17 2006-09-27 キヤノンマーケティングジャパン株式会社 層間絶縁膜の形成方法及び半導体装置
JP2000286254A (ja) * 1999-03-31 2000-10-13 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3544340B2 (ja) 1999-05-07 2004-07-21 新光電気工業株式会社 半導体装置の製造方法
JP2001077196A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体装置の製造方法
KR100391992B1 (ko) 2000-12-08 2003-07-22 삼성전자주식회사 저유전율 층간절연막을 가지는 반도체 장치 형성 방법
JP4257051B2 (ja) * 2001-08-10 2009-04-22 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003204055A (ja) * 2002-01-09 2003-07-18 Sony Corp 固体撮像装置およびその製造方法
JP4319078B2 (ja) * 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
JP4729863B2 (ja) * 2004-04-20 2011-07-20 ソニー株式会社 半導体記憶装置及びその製造方法
KR100673193B1 (ko) * 2005-06-30 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 제조방법

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