JP2009016828A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2009016828A
JP2009016828A JP2008168937A JP2008168937A JP2009016828A JP 2009016828 A JP2009016828 A JP 2009016828A JP 2008168937 A JP2008168937 A JP 2008168937A JP 2008168937 A JP2008168937 A JP 2008168937A JP 2009016828 A JP2009016828 A JP 2009016828A
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JP
Japan
Prior art keywords
insulating film
interlayer insulating
film
forming
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008168937A
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English (en)
Japanese (ja)
Other versions
JP2009016828A5 (enExample
Inventor
Jong-Won Hong
▲宗▼▲元▼ 洪
Gil-Heyun Choi
吉鉉 崔
Jong-Myeong Lee
ジョングミョング リ
Geumjung Seong
金重 成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2009016828A publication Critical patent/JP2009016828A/ja
Publication of JP2009016828A5 publication Critical patent/JP2009016828A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2008168937A 2007-07-02 2008-06-27 半導体装置の製造方法 Pending JP2009016828A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070066111A KR100885895B1 (ko) 2007-07-02 2007-07-02 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
JP2009016828A true JP2009016828A (ja) 2009-01-22
JP2009016828A5 JP2009016828A5 (enExample) 2011-07-14

Family

ID=40221792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008168937A Pending JP2009016828A (ja) 2007-07-02 2008-06-27 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US7972941B2 (enExample)
JP (1) JP2009016828A (enExample)
KR (1) KR100885895B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943511B2 (en) * 2009-07-17 2011-05-17 United Microelectronics Corp. Semiconductor process
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits
CN104810280A (zh) * 2014-01-27 2015-07-29 北大方正集团有限公司 半导体器件的制造方法
US11152372B2 (en) * 2020-02-25 2021-10-19 Micron Technology, Inc. Method used in forming integrated circuitry, and method used in forming memory circuitry

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774167A (ja) * 1993-06-30 1995-03-17 Kawasaki Steel Corp 半導体装置の製造方法
JPH09213698A (ja) * 1996-01-31 1997-08-15 Fujitsu Ltd 配線形成方法
JP2000003960A (ja) * 1998-06-12 2000-01-07 Hitachi Ltd 半導体装置及びその製造方法
JP2000164704A (ja) * 1998-11-26 2000-06-16 Nec Corp 半導体装置及びその製造方法
JP2003060030A (ja) * 2001-08-10 2003-02-28 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2003204055A (ja) * 2002-01-09 2003-07-18 Sony Corp 固体撮像装置およびその製造方法
JP2005310992A (ja) * 2004-04-20 2005-11-04 Sony Corp 半導体記憶装置及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0634797B1 (en) * 1993-07-13 1999-09-22 Sony Corporation Thin film semiconductor device for active matrix panel and method of manufacturing the same
US5627089A (en) * 1993-08-02 1997-05-06 Goldstar Co., Ltd. Method for fabricating a thin film transistor using APCVD
JP2976931B2 (ja) * 1997-06-04 1999-11-10 日本電気株式会社 半導体装置の製造方法
JPH11150084A (ja) * 1997-09-12 1999-06-02 Canon Inc 半導体装置および基板上への非晶質窒化硅素チタンの形成方法
JP3827056B2 (ja) 1999-03-17 2006-09-27 キヤノンマーケティングジャパン株式会社 層間絶縁膜の形成方法及び半導体装置
JP2000286254A (ja) * 1999-03-31 2000-10-13 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3544340B2 (ja) 1999-05-07 2004-07-21 新光電気工業株式会社 半導体装置の製造方法
JP2001077196A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体装置の製造方法
KR100391992B1 (ko) 2000-12-08 2003-07-22 삼성전자주식회사 저유전율 층간절연막을 가지는 반도체 장치 형성 방법
JP4319078B2 (ja) * 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
KR100673193B1 (ko) * 2005-06-30 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774167A (ja) * 1993-06-30 1995-03-17 Kawasaki Steel Corp 半導体装置の製造方法
JPH09213698A (ja) * 1996-01-31 1997-08-15 Fujitsu Ltd 配線形成方法
JP2000003960A (ja) * 1998-06-12 2000-01-07 Hitachi Ltd 半導体装置及びその製造方法
JP2000164704A (ja) * 1998-11-26 2000-06-16 Nec Corp 半導体装置及びその製造方法
JP2003060030A (ja) * 2001-08-10 2003-02-28 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2003204055A (ja) * 2002-01-09 2003-07-18 Sony Corp 固体撮像装置およびその製造方法
JP2005310992A (ja) * 2004-04-20 2005-11-04 Sony Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
KR20090002609A (ko) 2009-01-09
US20090011583A1 (en) 2009-01-08
KR100885895B1 (ko) 2009-02-26
US7972941B2 (en) 2011-07-05

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