KR100885895B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100885895B1
KR100885895B1 KR1020070066111A KR20070066111A KR100885895B1 KR 100885895 B1 KR100885895 B1 KR 100885895B1 KR 1020070066111 A KR1020070066111 A KR 1020070066111A KR 20070066111 A KR20070066111 A KR 20070066111A KR 100885895 B1 KR100885895 B1 KR 100885895B1
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KR
South Korea
Prior art keywords
interlayer insulating
substrate
forming
heat treatment
gate structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070066111A
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English (en)
Korean (ko)
Other versions
KR20090002609A (ko
Inventor
홍종원
최길현
이종명
성금중
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020070066111A priority Critical patent/KR100885895B1/ko
Priority to JP2008168937A priority patent/JP2009016828A/ja
Priority to US12/165,805 priority patent/US7972941B2/en
Publication of KR20090002609A publication Critical patent/KR20090002609A/ko
Application granted granted Critical
Publication of KR100885895B1 publication Critical patent/KR100885895B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020070066111A 2007-07-02 2007-07-02 반도체 장치의 제조 방법 Expired - Fee Related KR100885895B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020070066111A KR100885895B1 (ko) 2007-07-02 2007-07-02 반도체 장치의 제조 방법
JP2008168937A JP2009016828A (ja) 2007-07-02 2008-06-27 半導体装置の製造方法
US12/165,805 US7972941B2 (en) 2007-07-02 2008-07-01 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070066111A KR100885895B1 (ko) 2007-07-02 2007-07-02 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20090002609A KR20090002609A (ko) 2009-01-09
KR100885895B1 true KR100885895B1 (ko) 2009-02-26

Family

ID=40221792

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070066111A Expired - Fee Related KR100885895B1 (ko) 2007-07-02 2007-07-02 반도체 장치의 제조 방법

Country Status (3)

Country Link
US (1) US7972941B2 (enExample)
JP (1) JP2009016828A (enExample)
KR (1) KR100885895B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943511B2 (en) * 2009-07-17 2011-05-17 United Microelectronics Corp. Semiconductor process
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits
CN104810280A (zh) * 2014-01-27 2015-07-29 北大方正集团有限公司 半导体器件的制造方法
US11152372B2 (en) * 2020-02-25 2021-10-19 Micron Technology, Inc. Method used in forming integrated circuitry, and method used in forming memory circuitry

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990006655A (ko) * 1997-06-04 1999-01-25 가네꼬 히사시 반도체 장치를 제조하는 방법
KR20070002407A (ko) * 2005-06-30 2007-01-05 주식회사 하이닉스반도체 반도체 소자의 제조방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774167A (ja) * 1993-06-30 1995-03-17 Kawasaki Steel Corp 半導体装置の製造方法
EP0634797B1 (en) * 1993-07-13 1999-09-22 Sony Corporation Thin film semiconductor device for active matrix panel and method of manufacturing the same
US5627089A (en) * 1993-08-02 1997-05-06 Goldstar Co., Ltd. Method for fabricating a thin film transistor using APCVD
JPH09213698A (ja) * 1996-01-31 1997-08-15 Fujitsu Ltd 配線形成方法
JPH11150084A (ja) * 1997-09-12 1999-06-02 Canon Inc 半導体装置および基板上への非晶質窒化硅素チタンの形成方法
JP2000003960A (ja) * 1998-06-12 2000-01-07 Hitachi Ltd 半導体装置及びその製造方法
JP3173597B2 (ja) * 1998-11-26 2001-06-04 日本電気株式会社 半導体装置及びその製造方法
JP3827056B2 (ja) 1999-03-17 2006-09-27 キヤノンマーケティングジャパン株式会社 層間絶縁膜の形成方法及び半導体装置
JP2000286254A (ja) * 1999-03-31 2000-10-13 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3544340B2 (ja) 1999-05-07 2004-07-21 新光電気工業株式会社 半導体装置の製造方法
JP2001077196A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体装置の製造方法
KR100391992B1 (ko) 2000-12-08 2003-07-22 삼성전자주식회사 저유전율 층간절연막을 가지는 반도체 장치 형성 방법
JP4257051B2 (ja) * 2001-08-10 2009-04-22 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003204055A (ja) * 2002-01-09 2003-07-18 Sony Corp 固体撮像装置およびその製造方法
JP4319078B2 (ja) * 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
JP4729863B2 (ja) * 2004-04-20 2011-07-20 ソニー株式会社 半導体記憶装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990006655A (ko) * 1997-06-04 1999-01-25 가네꼬 히사시 반도체 장치를 제조하는 방법
KR20070002407A (ko) * 2005-06-30 2007-01-05 주식회사 하이닉스반도체 반도체 소자의 제조방법

Also Published As

Publication number Publication date
US7972941B2 (en) 2011-07-05
KR20090002609A (ko) 2009-01-09
JP2009016828A (ja) 2009-01-22
US20090011583A1 (en) 2009-01-08

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