JP5141761B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 151
- 238000004519 manufacturing process Methods 0.000 title claims description 71
- 239000004020 conductor Substances 0.000 claims description 129
- 238000010438 heat treatment Methods 0.000 claims description 73
- 229910007950 ZrBN Inorganic materials 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 37
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 147
- 239000011229 interlayer Substances 0.000 description 118
- 239000010949 copper Substances 0.000 description 84
- 230000004888 barrier function Effects 0.000 description 50
- 239000000463 material Substances 0.000 description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 38
- 230000004048 modification Effects 0.000 description 38
- 238000012986 modification Methods 0.000 description 38
- 229910052760 oxygen Inorganic materials 0.000 description 38
- 239000001301 oxygen Substances 0.000 description 38
- 150000002500 ions Chemical class 0.000 description 28
- 238000009792 diffusion process Methods 0.000 description 27
- 239000002994 raw material Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 238000009713 electroplating Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 229910000365 copper sulfate Inorganic materials 0.000 description 7
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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Description
12…素子分離領域
14…ゲート絶縁膜
16…ゲート電極
18…ソース/ドレイン拡散層
18a、18b…不純物拡散領域
20…サイドウォール絶縁膜
22…トランジスタ
24…層間絶縁膜
26…保護膜
28…コンタクトホール
30…バリア膜
32…導体プラグ
34…層間絶縁膜
36…溝
38…バリア膜
40…シード膜
42…Cu膜
44…配線
46…キャップ膜
47…層間絶縁膜
48…エッチングストッパ膜
50…層間絶縁膜
52…コンタクトホール
54…溝
58…開口部
60…第1の膜、ZrB2膜
60a…ZrBN膜
60b…ZrN膜
61…CuMn膜
62…MnOX膜
63…下地膜
70…導電体
70a…導体プラグ
70b…配線
本発明の第1実施形態による半導体装置及びその製造方法を図1乃至図9を用いて説明する。
まず、本実施形態による半導体装置を図1を用いて説明する。図1は、本実施形態による半導体装置を示す断面図である。
次に、本実施形態による半導体装置の製造方法を図2乃至図9を用いて説明する。図2乃至図9は、本実施形態による半導体装置の製造方法を示す工程断面図である。
次に、本実施形態による半導体装置及びその製造方法の変形例(その1)を図10乃至図13を用いて説明する。図10は、本変形例による半導体装置を示す断面図である。
次に、本実施形態による半導体装置及びその製造方法の変形例(その2)を図14乃至図17を用いて説明する。図14は、本変形例による半導体装置を示す断面図である。
本発明の第2実施形態による半導体装置及びその製造方法を図18乃至図21を用いて説明する。図1乃至図17に示す第1実施形態による半導体装置及びその製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
まず、本実施形態による半導体装置を図18を用いて説明する。図18は、本実施形態による半導体装置を示す断面図である。
次に、本実施形態による半導体装置の製造方法を図19乃至図21を用いて説明する。図19乃至図21は、本実施形態による半導体装置の製造方法を示す工程断面図である。
本発明の第3実施形態による半導体装置の製造方法を図22乃至図25を用いて説明する。図22乃至図25は、本実施形態による半導体装置の製造方法を示す工程断面図である。図1乃至図21に示す第1又は第2実施形態による半導体装置及びその製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
本発明の第4実施形態による半導体装置及びその製造方法を図26乃至図30を用いて説明する。図1乃至図25に示す第1乃至第3実施形態による半導体装置及びその製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
まず、本実施形態による半導体装置を図26を用いて説明する。図26は、本実施形態による半導体装置を示す断面図である。
次に、本実施形態による半導体装置の製造方法を図27乃至図30を用いて説明する。図27乃至図30は、本実施形態による半導体装置の製造方法を示す工程断面図である。
本発明の第5実施形態による半導体装置の製造方法を図31乃至図34を用いて説明する。図31乃至図34は、本実施形態による半導体装置の製造方法を示す工程断面図である。図1乃至図30に示す第1乃至第4実施形態による半導体装置及びその製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
本発明は上記実施形態に限らず種々の変形が可能である。
Claims (11)
- 半導体基板上に形成された第1の導電体と、
前記半導体基板上及び前記第1の導電体上に形成され、前記第1の導電体に達する開口部が形成された絶縁膜と、
前記開口部内に形成されたZrを含む化合物より成る第1の膜と、
前記開口部内における前記第1の膜上に形成されたMnを含む酸化物より成る第2の膜と、
前記開口部内に埋め込まれたCuを含む第2の導電体と
を有することを特徴とする半導体装置。 - 請求の範囲第1項記載の半導体装置において、
前記第1の膜は、ZrB2膜、ZrBN膜又はZrN膜である
ことを特徴とする半導体装置。 - 半導体基板上に形成された第1の導電体と、
前記半導体基板上及び前記第1の導電体上に形成され、前記第1の導電体に達する開口部が形成された絶縁膜と、
前記開口部内に形成された多結晶質の第1の膜と、
前記開口部内における前記第1の膜上に形成されたMnを含む酸化物より成る第2の膜と、
前記開口部内に埋め込まれたCuを含む第2の導電体と
を有することを特徴とする半導体装置。 - 請求の範囲第3項記載の半導体装置において、
前記第1の膜は、Zrを含む化合物より成る
ことを特徴とする半導体装置。 - 請求の範囲第3項又は第4項記載の半導体装置において、
前記第1の膜は、ZrB2膜である
ことを特徴とする半導体装置 - 請求の範囲第1項乃至第5項のいずれか1項に記載の半導体装置において、
前記開口部は、前記第1の導電体に達するコンタクトホールと、前記コンタクトホールの上部に接続された溝とを含む
ことを特徴とする半導体装置。 - 請求の範囲第6項記載の半導体装置において、
前記第2の膜は、前記コンタクトホールの側面並びに前記溝の側面及び底面に形成されている
ことを特徴とする半導体装置。 - 請求の範囲第7項記載の半導体装置において、
前記第2の導電体は、前記コンタクトホールの底部において前記第1の膜に接している
ことを特徴とする半導体装置。 - 半導体基板上に第1の導電体を形成する工程と、
前記半導体基板上及び前記第1の導電体上に絶縁膜を形成する工程と、
前記第1の導電体に達する開口部を前記絶縁膜に形成する工程と、
前記開口部内に、Zrを含む化合物より成る第1の膜を形成する工程と、
前記開口部内における前記第1の膜上に、CuとMnとを含む第2の膜を形成する工程と、
前記開口部内にCuを含む第2の導電体を形成する工程と、
熱処理を行うことにより、前記第2の膜中のMnを酸化させ、前記第2の膜をMnを含む酸化物より成る第3の膜に変化させる工程と
を有することを特徴とする半導体装置の製造方法。 - 請求の範囲第9項記載の半導体装置の製造方法において、
前記第1の膜は、ZrB2膜、ZrBN膜又はZrN膜である
ことを特徴とする半導体装置の製造方法。 - 請求の範囲第9項又は第10項記載の半導体装置の製造方法において、
前記第1の膜を形成する工程では、化学気相成長法により前記第1の膜を形成する
ことを特徴とする半導体装置の製造方法。
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JP5921977B2 (ja) * | 2012-07-04 | 2016-05-24 | 株式会社アルバック | バリア絶縁膜形成方法 |
US9224686B1 (en) * | 2014-09-10 | 2015-12-29 | International Business Machines Corporation | Single damascene interconnect structure |
US9418934B1 (en) * | 2015-06-30 | 2016-08-16 | International Business Machines Corporation | Structure and fabrication method for electromigration immortal nanoscale interconnects |
US9793213B2 (en) * | 2016-02-16 | 2017-10-17 | International Business Machines Corporation | Ion flow barrier structure for interconnect metallization |
US10049980B1 (en) * | 2017-02-10 | 2018-08-14 | International Business Machines Corporation | Low resistance seed enhancement spacers for voidless interconnect structures |
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