JP7007745B2 - 保護キャップ層を用いるプラチナ含有薄膜のエッチング - Google Patents

保護キャップ層を用いるプラチナ含有薄膜のエッチング Download PDF

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JP7007745B2
JP7007745B2 JP2019539226A JP2019539226A JP7007745B2 JP 7007745 B2 JP7007745 B2 JP 7007745B2 JP 2019539226 A JP2019539226 A JP 2019539226A JP 2019539226 A JP2019539226 A JP 2019539226A JP 7007745 B2 JP7007745 B2 JP 7007745B2
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platinum
layer
containing layer
cap layer
top surface
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JP2020507207A5 (enExample
JP2020507207A (ja
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マイヤー セバスティアン
リンク ヘルムト
ミッテルステッド マイク
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テキサス インスツルメンツ インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
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    • C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
    • C01G55/004—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
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    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • ing And Chemical Polishing (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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