JP7007745B2 - 保護キャップ層を用いるプラチナ含有薄膜のエッチング - Google Patents

保護キャップ層を用いるプラチナ含有薄膜のエッチング Download PDF

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JP7007745B2
JP7007745B2 JP2019539226A JP2019539226A JP7007745B2 JP 7007745 B2 JP7007745 B2 JP 7007745B2 JP 2019539226 A JP2019539226 A JP 2019539226A JP 2019539226 A JP2019539226 A JP 2019539226A JP 7007745 B2 JP7007745 B2 JP 7007745B2
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platinum
layer
containing layer
cap layer
top surface
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JP2020507207A5 (enExample
JP2020507207A (ja
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マイヤー セバスティアン
リンク ヘルムト
ミッテルステッド マイク
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テキサス インスツルメンツ インコーポレイテッド
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JP2008118088A (ja) 2006-10-11 2008-05-22 Fujitsu Ltd 半導体装置の製造方法
JP2009176975A (ja) 2008-01-25 2009-08-06 Renesas Technology Corp 半導体装置の製造方法
US20100035401A1 (en) 2008-08-11 2010-02-11 Kuo-Chih Lai Method for fabricating mos transistors

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