JP2003068779A5 - - Google Patents

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Publication number
JP2003068779A5
JP2003068779A5 JP2001259310A JP2001259310A JP2003068779A5 JP 2003068779 A5 JP2003068779 A5 JP 2003068779A5 JP 2001259310 A JP2001259310 A JP 2001259310A JP 2001259310 A JP2001259310 A JP 2001259310A JP 2003068779 A5 JP2003068779 A5 JP 2003068779A5
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JP
Japan
Prior art keywords
electrode
film
opening
insulating film
forming
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Granted
Application number
JP2001259310A
Other languages
English (en)
Japanese (ja)
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JP2003068779A (ja
JP3735547B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001259310A external-priority patent/JP3735547B2/ja
Priority to JP2001259310A priority Critical patent/JP3735547B2/ja
Priority to US10/228,081 priority patent/US6734568B2/en
Priority to TW091119676A priority patent/TWI264756B/zh
Priority to CNB021602913A priority patent/CN1210792C/zh
Priority to KR10-2002-0051369A priority patent/KR100488126B1/ko
Priority to CNA2004100115800A priority patent/CN1627480A/zh
Publication of JP2003068779A publication Critical patent/JP2003068779A/ja
Publication of JP2003068779A5 publication Critical patent/JP2003068779A5/ja
Publication of JP3735547B2 publication Critical patent/JP3735547B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001259310A 2001-08-29 2001-08-29 半導体装置及びその製造方法 Expired - Fee Related JP3735547B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001259310A JP3735547B2 (ja) 2001-08-29 2001-08-29 半導体装置及びその製造方法
US10/228,081 US6734568B2 (en) 2001-08-29 2002-08-27 Semiconductor device and method of manufacturing the same
KR10-2002-0051369A KR100488126B1 (ko) 2001-08-29 2002-08-29 반도체 장치 및 그 제조 방법
CNB021602913A CN1210792C (zh) 2001-08-29 2002-08-29 半导体器件及其制造方法
TW091119676A TWI264756B (en) 2001-08-29 2002-08-29 Semiconductor device
CNA2004100115800A CN1627480A (zh) 2001-08-29 2002-08-29 半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001259310A JP3735547B2 (ja) 2001-08-29 2001-08-29 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2003068779A JP2003068779A (ja) 2003-03-07
JP2003068779A5 true JP2003068779A5 (enExample) 2005-07-07
JP3735547B2 JP3735547B2 (ja) 2006-01-18

Family

ID=19086701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001259310A Expired - Fee Related JP3735547B2 (ja) 2001-08-29 2001-08-29 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP3735547B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4247017B2 (ja) * 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4220808B2 (ja) * 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
KR101029178B1 (ko) * 2003-03-10 2011-04-12 하마마츠 포토닉스 가부시키가이샤 포토다이오드 어레이 및 그 제조방법 그리고 방사선 검출기
JP4713849B2 (ja) * 2004-05-31 2011-06-29 株式会社日立ハイテクノロジーズ 多層配線基板の製造方法
KR100639703B1 (ko) 2005-08-09 2006-10-30 삼성전자주식회사 금속기저층의 언더컷 보상 방법 및 그를 이용한 웨이퍼레벨 칩 스케일 패키지 제조 방법
US7579258B2 (en) * 2006-01-25 2009-08-25 Freescale Semiconductor, Inc. Semiconductor interconnect having adjacent reservoir for bonding and method for formation
JP4808748B2 (ja) * 2008-06-13 2011-11-02 浜松ホトニクス株式会社 ホトダイオードアレイの製造方法
JP4808759B2 (ja) * 2008-11-18 2011-11-02 浜松ホトニクス株式会社 放射線検出器
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
US8441133B2 (en) * 2009-03-31 2013-05-14 Ibiden Co., Ltd. Semiconductor device
JP2012174988A (ja) * 2011-02-23 2012-09-10 Sony Corp 接合電極、接合電極の製造方法、半導体装置、及び、半導体装置の製造方法
JP6210777B2 (ja) * 2013-07-26 2017-10-11 新光電気工業株式会社 バンプ構造、配線基板及び半導体装置並びにバンプ構造の製造方法
JP6591240B2 (ja) * 2015-09-11 2019-10-16 株式会社東芝 デバイスの製造方法
KR101803516B1 (ko) * 2016-03-04 2017-11-30 주식회사 에스에프에이반도체 반도체 칩 구조물, 반도체 패키지 및 이의 제조 방법

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