JP2001185552A5 - - Google Patents

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Publication number
JP2001185552A5
JP2001185552A5 JP1999370790A JP37079099A JP2001185552A5 JP 2001185552 A5 JP2001185552 A5 JP 2001185552A5 JP 1999370790 A JP1999370790 A JP 1999370790A JP 37079099 A JP37079099 A JP 37079099A JP 2001185552 A5 JP2001185552 A5 JP 2001185552A5
Authority
JP
Japan
Prior art keywords
film
integrated circuit
circuit device
semiconductor integrated
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999370790A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001185552A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP37079099A priority Critical patent/JP2001185552A/ja
Priority claimed from JP37079099A external-priority patent/JP2001185552A/ja
Priority to TW089126482A priority patent/TW503492B/zh
Priority to KR1020000075456A priority patent/KR20010062344A/ko
Priority to US09/748,163 priority patent/US6573170B2/en
Priority to US09/811,535 priority patent/US20010019180A1/en
Publication of JP2001185552A publication Critical patent/JP2001185552A/ja
Publication of JP2001185552A5 publication Critical patent/JP2001185552A5/ja
Pending legal-status Critical Current

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JP37079099A 1999-12-27 1999-12-27 半導体集積回路装置およびその製造方法 Pending JP2001185552A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP37079099A JP2001185552A (ja) 1999-12-27 1999-12-27 半導体集積回路装置およびその製造方法
TW089126482A TW503492B (en) 1999-12-27 2000-12-12 Semiconductor integrated circuit device and manufacturing method of the same
KR1020000075456A KR20010062344A (ko) 1999-12-27 2000-12-12 반도체 집적회로장치 및 그 제조방법
US09/748,163 US6573170B2 (en) 1999-12-27 2000-12-27 Process for multilayer wiring connections and bonding pad adhesion to dielectric in a semiconductor integrated circuit device
US09/811,535 US20010019180A1 (en) 1999-12-27 2001-03-20 Semiconductor integrated circuit device and process for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37079099A JP2001185552A (ja) 1999-12-27 1999-12-27 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001185552A JP2001185552A (ja) 2001-07-06
JP2001185552A5 true JP2001185552A5 (enExample) 2004-10-28

Family

ID=18497607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP37079099A Pending JP2001185552A (ja) 1999-12-27 1999-12-27 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (2) US6573170B2 (enExample)
JP (1) JP2001185552A (enExample)
KR (1) KR20010062344A (enExample)
TW (1) TW503492B (enExample)

Families Citing this family (34)

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Publication number Priority date Publication date Assignee Title
KR100400033B1 (ko) * 2001-02-08 2003-09-29 삼성전자주식회사 다층 배선 구조를 갖는 반도체 소자 및 그의 제조방법
KR100389925B1 (ko) * 2001-03-05 2003-07-04 삼성전자주식회사 반도체 메모리 소자 및 그의 제조 방법
US6984892B2 (en) * 2001-03-28 2006-01-10 Lam Research Corporation Semiconductor structure implementing low-K dielectric materials and supporting stubs
JP2003017522A (ja) * 2001-06-28 2003-01-17 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2003068740A (ja) 2001-08-30 2003-03-07 Hitachi Ltd 半導体集積回路装置およびその製造方法
KR100400047B1 (ko) * 2001-11-19 2003-09-29 삼성전자주식회사 반도체 소자의 본딩패드 구조 및 그 형성방법
JP3790469B2 (ja) * 2001-12-21 2006-06-28 富士通株式会社 半導体装置
JP4260405B2 (ja) * 2002-02-08 2009-04-30 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3974470B2 (ja) * 2002-07-22 2007-09-12 株式会社東芝 半導体装置
JP2004095916A (ja) 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
US7692315B2 (en) * 2002-08-30 2010-04-06 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing the same
KR100448344B1 (ko) * 2002-10-22 2004-09-13 삼성전자주식회사 웨이퍼 레벨 칩 스케일 패키지 제조 방법
KR100545865B1 (ko) * 2003-06-25 2006-01-24 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR100591146B1 (ko) * 2003-07-11 2006-06-19 동부일렉트로닉스 주식회사 반도체 소자 및 반도체 소자의 본딩 패드 형성 방법
JP2005243907A (ja) 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
US8319307B1 (en) * 2004-11-19 2012-11-27 Voxtel, Inc. Active pixel sensors with variable threshold reset
JP2006196668A (ja) * 2005-01-13 2006-07-27 Toshiba Corp 半導体装置及びその製造方法
US7678713B2 (en) * 2005-08-04 2010-03-16 Texas Instruments Incorporated Energy beam treatment to improve packaging reliability
JP4708148B2 (ja) * 2005-10-07 2011-06-22 ルネサスエレクトロニクス株式会社 半導体装置
JP4995455B2 (ja) * 2005-11-30 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置
JP2007227556A (ja) * 2006-02-22 2007-09-06 Nec Electronics Corp 半導体装置
KR100873019B1 (ko) 2007-07-13 2008-12-10 주식회사 하이닉스반도체 필링 방지를 위한 본딩패드 및 그 형성 방법
JP2009027048A (ja) * 2007-07-23 2009-02-05 Panasonic Corp 半導体装置の製造方法
US8030775B2 (en) * 2007-08-27 2011-10-04 Megica Corporation Wirebond over post passivation thick metal
KR100933685B1 (ko) * 2007-12-18 2009-12-23 주식회사 하이닉스반도체 필링 방지를 위한 본딩패드 및 그 형성 방법
KR101406225B1 (ko) * 2008-04-11 2014-06-13 삼성전자주식회사 반도체 소자의 제조방법
US8440508B2 (en) * 2009-03-06 2013-05-14 Texas Instruments Incorporated Hydrogen barrier for ferroelectric capacitors
EP2444999A4 (en) * 2009-06-18 2012-11-14 Rohm Co Ltd SEMICONDUCTOR DEVICE
JP5837783B2 (ja) * 2011-09-08 2015-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US10217644B2 (en) * 2012-07-24 2019-02-26 Infineon Technologies Ag Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures
KR101455255B1 (ko) * 2014-02-28 2014-10-31 삼성전자주식회사 반도체 소자의 제조방법
KR20160050431A (ko) * 2014-10-29 2016-05-11 삼성전자주식회사 Ｍｉｓ 접합을 가지는 메모리 소자와 그 제조방법
US11114444B2 (en) * 2019-05-24 2021-09-07 Nanya Technology Corporation Semiconductor device with conductive cap layer over conductive plug and method for forming the same
US12245423B2 (en) 2019-05-24 2025-03-04 Nanya Technology Corporation Semiconductor device with conductive cap layer over conductive plug and method for preparinging the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08191104A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3526376B2 (ja) * 1996-08-21 2004-05-10 株式会社東芝 半導体装置及びその製造方法
JPH10247664A (ja) * 1997-03-04 1998-09-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
TW408433B (en) * 1997-06-30 2000-10-11 Hitachi Ltd Method for fabricating semiconductor integrated circuit
JP3686248B2 (ja) * 1998-01-26 2005-08-24 株式会社日立製作所 半導体集積回路装置およびその製造方法
JP2000012796A (ja) * 1998-06-19 2000-01-14 Hitachi Ltd 半導体装置ならびにその製造方法および製造装置
JP2000077625A (ja) * 1998-08-31 2000-03-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2000156480A (ja) * 1998-09-03 2000-06-06 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6239681B1 (en) * 1998-11-30 2001-05-29 Harrie R. Buswell Wire core for induction coils
JP3955404B2 (ja) * 1998-12-28 2007-08-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6291331B1 (en) * 1999-10-04 2001-09-18 Taiwan Semiconductor Manufacturing Company Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue

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