JP2001291720A5 - - Google Patents
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- Publication number
- JP2001291720A5 JP2001291720A5 JP2000104015A JP2000104015A JP2001291720A5 JP 2001291720 A5 JP2001291720 A5 JP 2001291720A5 JP 2000104015 A JP2000104015 A JP 2000104015A JP 2000104015 A JP2000104015 A JP 2000104015A JP 2001291720 A5 JP2001291720 A5 JP 2001291720A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- manufacturing
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010949 copper Substances 0.000 claims description 128
- 239000004065 semiconductor Substances 0.000 claims description 110
- 230000004888 barrier function Effects 0.000 claims description 67
- 238000004519 manufacturing process Methods 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 42
- 229910052802 copper Inorganic materials 0.000 claims description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000104015A JP2001291720A (ja) | 2000-04-05 | 2000-04-05 | 半導体集積回路装置および半導体集積回路装置の製造方法 |
| TW090107703A TW531892B (en) | 2000-04-05 | 2001-03-30 | Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device |
| KR1020010018003A KR100698987B1 (ko) | 2000-04-05 | 2001-04-04 | 반도체 집적 회로 장치의 제조 방법 |
| US09/825,946 US6764950B2 (en) | 2000-04-05 | 2001-04-05 | Fabrication method for semiconductor integrated circuit device |
| US10/811,927 US7232757B2 (en) | 2000-04-05 | 2004-03-30 | Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device |
| US11/790,760 US20080132059A1 (en) | 2000-04-05 | 2007-04-27 | Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000104015A JP2001291720A (ja) | 2000-04-05 | 2000-04-05 | 半導体集積回路装置および半導体集積回路装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007310344A Division JP2008141204A (ja) | 2007-11-30 | 2007-11-30 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001291720A JP2001291720A (ja) | 2001-10-19 |
| JP2001291720A5 true JP2001291720A5 (enExample) | 2006-03-23 |
Family
ID=18617635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000104015A Pending JP2001291720A (ja) | 2000-04-05 | 2000-04-05 | 半導体集積回路装置および半導体集積回路装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6764950B2 (enExample) |
| JP (1) | JP2001291720A (enExample) |
| KR (1) | KR100698987B1 (enExample) |
| TW (1) | TW531892B (enExample) |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4554011B2 (ja) * | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| US7034402B1 (en) * | 2000-06-28 | 2006-04-25 | Intel Corporation | Device with segmented ball limiting metallurgy |
| TW462085B (en) * | 2000-10-26 | 2001-11-01 | United Microelectronics Corp | Planarization of organic silicon low dielectric constant material by chemical mechanical polishing |
| JP4535629B2 (ja) * | 2001-02-21 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6727158B2 (en) * | 2001-11-08 | 2004-04-27 | Micron Technology, Inc. | Structure and method for forming a faceted opening and a layer filling therein |
| CN1198331C (zh) | 2001-12-27 | 2005-04-20 | 松下电器产业株式会社 | 布线结构的形成方法 |
| CN1220259C (zh) | 2001-12-27 | 2005-09-21 | 松下电器产业株式会社 | 布线结构的形成方法 |
| CN1207773C (zh) | 2001-12-27 | 2005-06-22 | 松下电器产业株式会社 | 布线结构的形成方法 |
| JP4340040B2 (ja) * | 2002-03-28 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2003318140A (ja) * | 2002-04-26 | 2003-11-07 | Applied Materials Inc | 研磨方法及び装置 |
| US7687917B2 (en) | 2002-05-08 | 2010-03-30 | Nec Electronics Corporation | Single damascene structure semiconductor device having silicon-diffused metal wiring layer |
| TWI288443B (en) | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
| DE10224167B4 (de) * | 2002-05-31 | 2007-01-25 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Kupferleitung mit erhöhter Widerstandsfähigkeit gegen Elektromigration in einem Halbleiterelement |
| CN100352036C (zh) | 2002-10-17 | 2007-11-28 | 株式会社瑞萨科技 | 半导体器件及其制造方法 |
| JP4454242B2 (ja) | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP2004363516A (ja) * | 2003-06-09 | 2004-12-24 | Sony Corp | 埋め込み配線の形成方法 |
| JP2005050903A (ja) * | 2003-07-30 | 2005-02-24 | Toshiba Corp | 半導体装置およびその製造方法 |
| US20050054206A1 (en) * | 2003-09-04 | 2005-03-10 | Nanya Technology Corporation | Etching method and recipe for forming high aspect ratio contact hole |
| US20060172526A1 (en) * | 2003-10-16 | 2006-08-03 | United Microelectronics Corp. | Method for preventing edge peeling defect |
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| US7180195B2 (en) * | 2003-12-17 | 2007-02-20 | Intel Corporation | Method and apparatus for improved power routing |
| SG157226A1 (en) * | 2004-02-24 | 2009-12-29 | Taiwan Semiconductor Mfg | A method for improving time dependent dielectric breakdown lifetimes |
| US20050230354A1 (en) * | 2004-04-14 | 2005-10-20 | Hardikar Vishwas V | Method and composition of post-CMP wetting of thin films |
| JP4703129B2 (ja) * | 2004-05-06 | 2011-06-15 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法、設計方法 |
| US7465595B2 (en) * | 2004-11-09 | 2008-12-16 | Fujitsu Limited | Quantum device, manufacturing method of the same and controlling method of the same |
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| JP4964442B2 (ja) * | 2005-08-10 | 2012-06-27 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
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| KR100741882B1 (ko) * | 2005-12-29 | 2007-07-23 | 동부일렉트로닉스 주식회사 | 고전압 소자 및 그 제조방법 |
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| EP2124250A4 (en) | 2007-03-13 | 2014-06-25 | Fujitsu Ltd | SEMICONDUCTOR ELEMENT AND PROCESS FOR ITS MANUFACTURE |
| US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
| DE102007035266B4 (de) * | 2007-07-27 | 2010-03-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium |
| US7758403B2 (en) * | 2007-11-16 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for lapping workpieces with soluble abrasives |
| US8517990B2 (en) * | 2007-12-18 | 2013-08-27 | Hospira, Inc. | User interface improvements for medical devices |
| JP4778018B2 (ja) * | 2008-04-23 | 2011-09-21 | 富士通セミコンダクター株式会社 | 絶縁膜形成方法 |
| US8138041B2 (en) * | 2008-06-12 | 2012-03-20 | International Business Machines Corporation | In-situ silicon cap for metal gate electrode |
| US8535997B2 (en) * | 2008-07-03 | 2013-09-17 | Kobe Steel, Ltd. | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| EP2345069B1 (en) * | 2008-10-27 | 2016-02-17 | Nxp B.V. | Method of manufacturing a biocompatible electrode |
| US8513119B2 (en) | 2008-12-10 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming bump structure having tapered sidewalls for stacked dies |
| US20100171197A1 (en) | 2009-01-05 | 2010-07-08 | Hung-Pin Chang | Isolation Structure for Stacked Dies |
| US20110052797A1 (en) * | 2009-08-26 | 2011-03-03 | International Business Machines Corporation | Low Temperature Plasma-Free Method for the Nitridation of Copper |
| US8791549B2 (en) | 2009-09-22 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside interconnect structure connected to TSVs |
| US8466059B2 (en) | 2010-03-30 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for stacked dies |
| US8900994B2 (en) | 2011-06-09 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing a protective structure |
| JP5859758B2 (ja) * | 2011-07-05 | 2016-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US8525339B2 (en) | 2011-07-27 | 2013-09-03 | International Business Machines Corporation | Hybrid copper interconnect structure and method of fabricating same |
| JP2014027012A (ja) * | 2012-07-24 | 2014-02-06 | Toshiba Corp | 半導体装置の製造方法および半導体装置の製造装置 |
| KR20140028735A (ko) * | 2012-08-30 | 2014-03-10 | 에스케이하이닉스 주식회사 | 반도체 메모리 소자 및 그 제조방법 |
| US9312203B2 (en) | 2013-01-02 | 2016-04-12 | Globalfoundries Inc. | Dual damascene structure with liner |
| JP6255728B2 (ja) | 2013-06-17 | 2018-01-10 | 富士通セミコンダクター株式会社 | 半導体装置、半導体装置の製造方法及び設計プログラム |
| JP5694503B2 (ja) * | 2013-12-27 | 2015-04-01 | Jx日鉱日石金属株式会社 | 自己拡散抑制機能を有するシード層及び自己拡散抑制機能を備えたシード層の形成方法 |
| JP2016219620A (ja) * | 2015-05-21 | 2016-12-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法およびそれに用いられるfoup |
| US9887160B2 (en) * | 2015-09-24 | 2018-02-06 | International Business Machines Corporation | Multiple pre-clean processes for interconnect fabrication |
| US20180134546A1 (en) * | 2016-11-14 | 2018-05-17 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
| JP6352490B2 (ja) * | 2017-04-24 | 2018-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US11195748B2 (en) * | 2017-09-27 | 2021-12-07 | Invensas Corporation | Interconnect structures and methods for forming same |
| KR102492733B1 (ko) | 2017-09-29 | 2023-01-27 | 삼성디스플레이 주식회사 | 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법 |
| US11139242B2 (en) * | 2019-04-29 | 2021-10-05 | International Business Machines Corporation | Via-to-metal tip connections in multi-layer chips |
| US11152455B2 (en) * | 2019-09-23 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to reduce breakdown failure in a MIM capacitor |
| US11810857B2 (en) * | 2020-08-25 | 2023-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via for semiconductor device and method |
| CN112038228B (zh) * | 2020-08-27 | 2022-08-09 | 上海华力集成电路制造有限公司 | 改善TiN薄膜连续性的表面处理方法 |
| US11430729B2 (en) | 2020-09-16 | 2022-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | MIM capacitor with a symmetrical capacitor insulator structure |
| KR102821382B1 (ko) * | 2023-08-16 | 2025-06-17 | 주식회사 라온텍 | 마이크로 디스플레이 장치의 액정 표시 소자 및 제조 방법 |
| CN118471905B (zh) * | 2024-07-10 | 2024-09-27 | 合肥欧益睿芯科技有限公司 | 半导体器件及其制造方法、电子设备 |
Family Cites Families (37)
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|---|---|---|---|---|
| JP3072807B2 (ja) | 1992-07-15 | 2000-08-07 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JP3156886B2 (ja) | 1993-01-26 | 2001-04-16 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| KR0161883B1 (ko) * | 1995-05-23 | 1999-02-01 | 문정환 | 반도체장치의 금속배선 형성방법 |
| JPH0922896A (ja) * | 1995-07-07 | 1997-01-21 | Toshiba Corp | 金属膜の選択的形成方法 |
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| US6136680A (en) * | 2000-01-21 | 2000-10-24 | Taiwan Semiconductor Manufacturing Company | Methods to improve copper-fluorinated silica glass interconnects |
| US6284657B1 (en) * | 2000-02-25 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Non-metallic barrier formation for copper damascene type interconnects |
| US6348410B1 (en) * | 2000-11-02 | 2002-02-19 | Advanced Micro Devices, Inc. | Low temperature hillock suppression method in integrated circuit interconnects |
-
2000
- 2000-04-05 JP JP2000104015A patent/JP2001291720A/ja active Pending
-
2001
- 2001-03-30 TW TW090107703A patent/TW531892B/zh not_active IP Right Cessation
- 2001-04-04 KR KR1020010018003A patent/KR100698987B1/ko not_active Expired - Fee Related
- 2001-04-05 US US09/825,946 patent/US6764950B2/en not_active Expired - Lifetime
-
2004
- 2004-03-30 US US10/811,927 patent/US7232757B2/en not_active Expired - Fee Related
-
2007
- 2007-04-27 US US11/790,760 patent/US20080132059A1/en not_active Abandoned
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