TW503492B - Semiconductor integrated circuit device and manufacturing method of the same - Google Patents

Semiconductor integrated circuit device and manufacturing method of the same Download PDF

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Publication number
TW503492B
TW503492B TW089126482A TW89126482A TW503492B TW 503492 B TW503492 B TW 503492B TW 089126482 A TW089126482 A TW 089126482A TW 89126482 A TW89126482 A TW 89126482A TW 503492 B TW503492 B TW 503492B
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Taiwan
Prior art keywords
wiring
film
dielectric layer
plug
bonding pad
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Application number
TW089126482A
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English (en)
Chinese (zh)
Inventor
Takashi Aoyanagi
Junji Ogishima
Hironao Kobayashi
Yuji Hara
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Hitachi Ltd
Hitachi Ulsi Sys Co Ltd
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Application filed by Hitachi Ltd, Hitachi Ulsi Sys Co Ltd filed Critical Hitachi Ltd
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Publication of TW503492B publication Critical patent/TW503492B/zh

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    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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TW089126482A 1999-12-27 2000-12-12 Semiconductor integrated circuit device and manufacturing method of the same TW503492B (en)

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