KR20010062344A - 반도체 집적회로장치 및 그 제조방법 - Google Patents
반도체 집적회로장치 및 그 제조방법 Download PDFInfo
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- KR20010062344A KR20010062344A KR1020000075456A KR20000075456A KR20010062344A KR 20010062344 A KR20010062344 A KR 20010062344A KR 1020000075456 A KR1020000075456 A KR 1020000075456A KR 20000075456 A KR20000075456 A KR 20000075456A KR 20010062344 A KR20010062344 A KR 20010062344A
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- Prior art keywords
- film
- wiring
- interlayer insulating
- hole
- insulating film
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999-370790 | 1999-12-27 | ||
| JP37079099A JP2001185552A (ja) | 1999-12-27 | 1999-12-27 | 半導体集積回路装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010062344A true KR20010062344A (ko) | 2001-07-07 |
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ID=18497607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000075456A Withdrawn KR20010062344A (ko) | 1999-12-27 | 2000-12-12 | 반도체 집적회로장치 및 그 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6573170B2 (enExample) |
| JP (1) | JP2001185552A (enExample) |
| KR (1) | KR20010062344A (enExample) |
| TW (1) | TW503492B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100873019B1 (ko) * | 2007-07-13 | 2008-12-10 | 주식회사 하이닉스반도체 | 필링 방지를 위한 본딩패드 및 그 형성 방법 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100400033B1 (ko) * | 2001-02-08 | 2003-09-29 | 삼성전자주식회사 | 다층 배선 구조를 갖는 반도체 소자 및 그의 제조방법 |
| KR100389925B1 (ko) * | 2001-03-05 | 2003-07-04 | 삼성전자주식회사 | 반도체 메모리 소자 및 그의 제조 방법 |
| US6984892B2 (en) * | 2001-03-28 | 2006-01-10 | Lam Research Corporation | Semiconductor structure implementing low-K dielectric materials and supporting stubs |
| JP2003017522A (ja) * | 2001-06-28 | 2003-01-17 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
| JP2003068740A (ja) | 2001-08-30 | 2003-03-07 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
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| JPH08191104A (ja) * | 1995-01-11 | 1996-07-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
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| JPH10247664A (ja) * | 1997-03-04 | 1998-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
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1999
- 1999-12-27 JP JP37079099A patent/JP2001185552A/ja active Pending
-
2000
- 2000-12-12 KR KR1020000075456A patent/KR20010062344A/ko not_active Withdrawn
- 2000-12-12 TW TW089126482A patent/TW503492B/zh not_active IP Right Cessation
- 2000-12-27 US US09/748,163 patent/US6573170B2/en not_active Expired - Lifetime
-
2001
- 2001-03-20 US US09/811,535 patent/US20010019180A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100873019B1 (ko) * | 2007-07-13 | 2008-12-10 | 주식회사 하이닉스반도체 | 필링 방지를 위한 본딩패드 및 그 형성 방법 |
| US7807559B2 (en) | 2007-07-13 | 2010-10-05 | Hynix Semiconductor Inc. | Bonding pad for preventing pad peeling and method for fabricating the same |
| US7989962B2 (en) | 2007-07-13 | 2011-08-02 | Hynix Semiconductor Inc. | Bonding pad for preventing pad peeling |
Also Published As
| Publication number | Publication date |
|---|---|
| US20010019180A1 (en) | 2001-09-06 |
| US6573170B2 (en) | 2003-06-03 |
| US20010005624A1 (en) | 2001-06-28 |
| TW503492B (en) | 2002-09-21 |
| JP2001185552A (ja) | 2001-07-06 |
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