TWI607495B - 半導體元件結構及其形成方法 - Google Patents

半導體元件結構及其形成方法 Download PDF

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TWI607495B
TWI607495B TW105125251A TW105125251A TWI607495B TW I607495 B TWI607495 B TW I607495B TW 105125251 A TW105125251 A TW 105125251A TW 105125251 A TW105125251 A TW 105125251A TW I607495 B TWI607495 B TW I607495B
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Taiwan
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metal oxide
layer
conductive
dielectric layer
oxide fibers
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TW105125251A
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TW201732903A (zh
Inventor
林俊成
余振華
盧思維
齊彥堯
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台灣積體電路製造股份有限公司
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Description

半導體元件結構及其形成方法
本發明係關於積體電路技術，且特別是關於一種半導體元件結構及其形成方法。
半導體元件應用於各種電子裝置，例如個人電腦、手機、數位相機等各式電子儀器。半導體元件的形成通常包括在半導體基板上依序沉積絕緣層或介電層、導電層及半導體層材料，並利用微影圖案化各種材料層，以在基板上形成電路元件。
提升元件表現的方法之一為藉由縮小在給定晶片上的元件尺寸，以提高電路的積體程度。此係藉由在給定晶片上微型化或縮小元件尺寸。在進行晶片尺寸的縮小上，容忍度扮演了重要的角色。
然而，雖然現有的半導體製程已可達到部分應用上的需求，但隨著元件尺寸的縮小，其表現仍未在所有層面上令人滿意。
於一些實施例中，提供了一種半導體元件結構，包括：一基板；一導電結構，位於該基板上；複數個第一金屬氧化物纖維，位於該導電結構上；及一介電層，位於該基板上 並覆蓋該導電結構與該些第一金屬氧化物纖維，其中該介電層填滿了該些第一金屬氧化物纖維之間之間隙。
於一些實施例中，提供了一種半導體元件結構，包括：一基板；一第一導電結構，位於該基板上；一金屬氧化物層，位於該第一導電結構上；複數個第一金屬氧化物纖維，連結於該金屬氧化物層，其中該些第一金屬氧化物纖維與該金屬氧化物層係由相同材料製成；及一介電層，位於該基板上並覆蓋該第一導電結構、該金屬氧化物層與該些第一金屬氧化物纖維。
於一些實施例中，提供了一種半導體元件結構之形成方法，包括：形成一導電結構於一基板上；形成複數個第一金屬氧化物纖維於該導電結構上；及形成一介電層於該基板上，以覆蓋該導電結構與該些第一金屬氧化物纖維，其中該介電層填滿該些金屬氧化物纖維之間的間隙內。
100‧‧‧半導體元件結構
110‧‧‧基板
120‧‧‧介電層
130‧‧‧導電結構
132‧‧‧頂面
134‧‧‧側壁
136‧‧‧底面
140‧‧‧金屬氧化物纖維
142‧‧‧端部
150‧‧‧介電層
152‧‧‧通孔
160‧‧‧導電層
162‧‧‧頂面
164‧‧‧側壁
170‧‧‧金屬氧化物纖維
172‧‧‧端部
180‧‧‧介電層
182‧‧‧通孔
190‧‧‧接墊
200‧‧‧半導體元件結構
210‧‧‧金屬氧化物層
220‧‧‧金屬氧化物層
300‧‧‧半導體元件結構
310‧‧‧載板
320‧‧‧黏著層
330‧‧‧保護層
332‧‧‧開口
340‧‧‧導電層
342‧‧‧側壁
350‧‧‧罩幕層
352‧‧‧通孔
360‧‧‧導電介層物結構
362‧‧‧頂面
364‧‧‧側壁
372‧‧‧金屬氧化物纖維
372a‧‧‧端部
374‧‧‧金屬氧化物纖維
374a‧‧‧端部
380‧‧‧晶片
390‧‧‧介電層
410‧‧‧接墊
420‧‧‧內連結構
430‧‧‧介電層
440‧‧‧黏著層
450‧‧‧模塑化合物層
460‧‧‧介電層
462‧‧‧開口
470‧‧‧導電層
472‧‧‧頂面
474‧‧‧側壁
480‧‧‧金屬氧化物纖維
490‧‧‧介電層
492‧‧‧開口
500‧‧‧晶片封裝物
510‧‧‧晶片
520‧‧‧電路基板
521a‧‧‧表面
521b‧‧‧表面
522‧‧‧複合介電層
524‧‧‧導線層
526‧‧‧導電介層物結構
528‧‧‧接墊
530‧‧‧導電凸塊
540‧‧‧導電凸塊
550‧‧‧底膠層
560‧‧‧底膠層
570‧‧‧模塑化合物層
600‧‧‧半導體元件結構
610‧‧‧金屬氧化物層
620‧‧‧金屬氧化物層
630‧‧‧金屬氧化物層
G1‧‧‧間隙
G2‧‧‧間隙
T‧‧‧厚度
C‧‧‧導電凸塊
B‧‧‧接墊
根據以下的詳細說明並配合所附圖式做完整揭露。應注意的是，根據本產業的一般作業，圖示並未必按照比例繪製。事實上，可能任意的放大或縮小元件的尺寸，以做清楚的說明。
第1A-1H圖為依據一些實施例之形成半導體元件結構之製程中不同階段之剖面圖；第2A-2F圖為依據一些實施例之形成半導體元件結構之製程中不同階段之剖面圖；第3A-3O圖為依據一些實施例之形成半導體元件結構之製 程中不同階段之剖面圖；及第4圖為依據一些實施例之半導體元件結構之剖面圖。
為以下的揭露內容提供許多不同的實施例或範例以實施本案的不同特徵。以下的揭露內容敘述各個構件及其排列方式的特定範例，以簡化說明。當然，這些特定的範例並非用以限定。例如，若是本揭露書敘述了一第一特徵形成於一第二特徵之上或上方，即表示其可能包含上述第一特徵與上述第二特徵是直接接觸的實施例，亦可能包含了有附加特徵形成於上述第一特徵與上述第二特徵之間，而使上述第一特徵與第二特徵可能未直接接觸的實施例。另外，以下揭露書不同範例可能重複使用相同的參考符號及/或標記。這些重複係為了簡化與清晰的目的，並非用以限定所討論的不同實施例及/或結構之間有特定的關係。
再者，為了方便描述圖式中一元件或特徵部件與另一(複數)元件或(複數)特徵部件的關係，可使用空間相關用語，例如“在...之下”、“下方”、“較下部”、“上方”、“較上部”及類似的用語等。除了圖式所繪示的方位之外，空間相關用語用以涵蓋使用或操作中的裝置的不同方位。所述裝置也可被另外定位(例如，旋轉90度或者位於其他方位)，並對應地解讀所使用的空間相關用語的描述。應當理解，可於方法進行前、進行中及/或進行後提供額外的操作，且在其它的實施例中，.所述的一些操作可被取代或刪除。
第1A-1H圖為依據一些實施例之形成半導體元件 結構100之製程中不同階段之剖面圖。如第1A圖所示，依據一些實施例，提供一基板110。依據一些實施例，基板110包括一半導體基板。依據一些實施例，半導體基板包括半導體晶圓(例如矽晶圓)。另外或額外，基板110可包括元素態半導體材料、化合物半導體材料及/或合金半導體材料。
元素半導體材料的實例可以是但不限於矽晶體、多晶矽、非晶矽、鍺及/或鑽石。化合物半導體的實例可以是但不限於碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦及/或銻化銦。合金半導體材料的實例可以是但不限於SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP。
如第1圖所示，依據一些實施例，形成介電層120於半導體基板110上。依據一些實施例，介電層120包括聚合物(例如聚亞醯胺)、氧化物(例如二氧化矽)、硼磷矽玻璃(BPSG)、旋塗玻璃(SOG)、未摻雜矽酸鹽玻璃(USG)、氟化矽酸鹽玻璃(FSG)、高密度電漿(HDP)氧化物或電漿增強四乙氧基矽烷(PETEOS)。
依據一些實施例，介電層120可包括由諸如低介電常數或極低介電常數(ELK)材料的多種介電材料所製成之多層。依據一些實施例，介電層120可藉由旋轉塗佈、化學氣相沉積(CVD)、物理氣相沉積(PVD)、原子層沉積(ALD)或其它適用製程來形成。
如第1A圖所示，依據一些實施例，形成一導電結構130於介電層120上。依據一些實施例，導電結構130包括一導線層(wiring layer)或數個導線層，例如一重分佈層 (redistribution layer)或數個重分佈層。為了簡化目的，第1A圖僅顯示了一導線層，但並非以其為限。導電結構130包括一導電介層物結構或其他適當之導電結構。
依據一些實施例，導電結構130係電性連結於位於基板110之上或之內的元件(未顯示)。依據一些實施例，導電結構130具有一頂面132、數個側壁134與一底面136。依據一些實施例，頂面係背對基板110。依據一些實施例，側壁134環繞了頂面132與底面136。
導電結構130包括了可氧化成為纖維狀之金屬氧化物之銅或其他適當導電材料。依據一些實施例，導電結構130係採用一鍍敷製程(plating process)(或沉積製程)、一微影製程與一蝕刻製程所形成。依據一些實施例，鍍敷製程包括了一電鍍製程(electroplating process)或無電電鍍製程(electroless plating process)。依據一些實施例，沉積製程包括物理氣相沉積製程或化學氣相沉積製程。依據一些實施例，於導電結構130上施行一表面潔淨製程以移除位於導電結構130上之原生氧化物層(native oxide layer，未顯示)。
如第1B圖所示，依據一些實施例，形成數個金屬氧化物纖維140於導電130結構上。依據一些實施例，金屬氧化物纖維140係形成於導電結構130之頂面132與側壁134上。依據一些實施例，金屬氧化物纖維140各具有直接連結於導電結構130之一端部(end portion)142。依據一些實施例，金屬氧化物纖維140係直接接觸了導電結構130。
於一些實施例中，鄰近之兩個金屬氧化物纖維140 係彼此互相直接接觸。依據一些實施例，可隨機地形成此些金屬氧化物纖維140。依據一些實施例，導電結構130包括一金屬材料(例如銅)，而金屬氧化物纖維140係由金屬材料之氧化物所製成。依據一些實施例，金屬材料之氧化物包括了氧化銅。
依據一些實施例，金屬氧化物纖維140的形成包括氧化導電結構130之表面部分(superficial portion)。依據一些實施例，導電結構130的表面部分係鄰近於頂面132與側壁134。依據一些實施例，表面部分的氧化製程包括於導電結構130的表面部分(或於頂面132與側壁134)施行一熱氧化製程或一化學氧化製程。
依據一些實施例，化學氧化製程採用氧化溶液(例如過氧化氫H2O2)。依據一些實施例，化學氧化製程包括了將導電結構130浸入於氧化溶液中。依據一些實施例，熱氧化製程係於含氧環境中施行。
依據一些實施例，熱氧化製程係於介於約100℃至約300℃之製程溫度範圍下施行。當製程溫度低於100℃時，可能大體不會形成金屬氧化物纖維140。當製程溫度大於300℃時，將負面地影響了形成於基板100之內或之上之元件。
於一些實施例中，導電結構130之底面136並沒有暴露於氧化製程中。因此，依據一些實施例，於導電結構130及其下方介電層120之間並沒有形成金屬氧化物纖維140。
如第1C圖所示，依據一些實施例，形成介電層150於介電層120上。依據一些實施例，介電層150覆蓋了導電結構130與金屬氧化物纖維140。依據一些實施例，介電層150填滿 了金屬氧化物纖維140間之間隙G1。
依據一些實施例，介電層150環繞了各個金屬氧化物纖維140。依據一些實施例，金屬氧化物纖維140穿透進入介電層150。依據一些實施例，金屬氧化物纖維150係埋設於介電層150內。依據一些實施例，金屬氧化物纖維140係直接接觸介電層150。
由於金屬氧化物纖維140係自於導電結構130所形成，介於金屬氧化物纖維140與導電結構130之間的附著情形(adhesion)係大於介電層150與導電結構130之間的附著情形。介於金屬氧化物纖維140與介電層150之間的邊界區極大，其改善了介於金屬氧化物纖維140與介電層150之間的附著情形。由於金屬氧化物纖維140連結於導電結構130與介電層150之間，而金屬氧化物纖維140可用以避免導電結構130與介電層150之間的分層情形(delamination)。因此，改善了半導體元件結構100的良率與可靠度。
依據一些實施例，金屬氧化物纖維140具有大於金屬氧化物纖維140之平均直徑(average diameter)之平均長度(average length)。依據一些實施例，金屬氧化物纖維140的平均長度介於約10奈米至約400奈米。當金屬氧化物纖維140的平均長度140係少於10奈米時，介於金屬氧化物纖維140與介電層150之間的邊界區可能不夠大以改善金屬氧化物纖維與介電層150之間的附著情形。當金屬氧化物纖維140的平均長度140係多於400奈米時，金屬氧化物纖維140可能會輕易地破碎。
依據一些實施例，金屬氧化物纖維140之平均直徑 介於約1奈米至約90奈米。當金屬氧化物纖維140之平均直徑係少於1奈米時，金屬氧化物纖維140可能會輕易地破碎。當金屬氧化物纖維140的平均直徑係大於90奈米時，介於金屬氧化物纖維140與介電層150之間的邊界區可能不夠大以改善介於金屬氧化物纖維140與介電層150間的附著情形。依據一些實施例，金屬氧化物纖維140亦稱為奈米金屬氧化物纖維(nano-metal oxide fibers)。
於一些實施例中，金屬氧化物纖維140的平均長度與平均直徑的比率介於約2至約80。如此，金屬氧化物纖維140具有介於金屬氧化物纖維140與介電層150之間的足夠大邊界區且仍可具有足夠機械強度。
依據一些實施例，介電層150包括但不限於聚合物(例如聚亞醯胺)、氧化物(例如二氧化矽)、硼磷矽玻璃(BPSG)、旋塗玻璃(SOG)、未摻雜矽酸鹽玻璃(USG)、氟化矽酸鹽玻璃(FSG)、高密度電漿(HDP)氧化物或電漿增強四乙氧基矽烷(PETEOS)。依據一些實施例，金屬氧化物纖維140與介電層150係由不同材料所製成。
依據一些實施例，介電層150可包括由諸如低介電常數或極低介電常數(ELK)材料的多種介電材料所製成之多層。依據一些實施例，介電層150可藉由旋轉塗佈、化學氣相沉積(CVD)、物理氣相沉積(PVD)、原子層沉積(ALD)或其它適用的製程來形成。
如第1D圖所示，依據一些實施例，移除介電層150之一部分及介電層150之此部分下方的金屬氧化物纖維140。依 據一些實施例，此移除製程包括一微影製程與一蝕刻製程。
於移除製程後，依據一些實施例，形成一通孔(through hole)152。依據一些實施例，通孔152露出導電結構130之一部。依據一些實施例，於通孔152內大體沒有金屬氧化物纖維。
如第1E圖所示，形成一導電層160於介電層150上並延伸進入通孔152內。依據一些實施例，導電層160係電性連結於導電結構130。依據一些實施例，導電層160包括一重分佈層與一導電介層物結構。
依據一些實施例，導電層160具有一頂面162與數個側壁164。依據一些實施例，側壁164環繞了頂面162。依據一些實施例，導電層160包括了銅或其他適當導電材料。導電層160採用一鍍敷製程(或沉積製程)、一微影製程及一蝕刻製程所形成。
如第1E圖所示，依據一些實施例，形成數個金屬氧化物纖維170於導電層160上。依據一些實施例，金屬氧化物纖維170亦稱為奈米金屬氧化物纖維。依據一些實施例，金屬氧化物纖維170係形成於導電層160之頂面162與側壁164上。
依據一些實施例，金屬氧化物纖維170並未形成於導電層160與其下方之介電層150之間。依據一些實施例，各個金屬氧化物纖維170具有直接連結於導電層160之一端部172。依據一些實施例，金屬氧化物纖維170係直接接觸了導電層160。於一些實施例中，鄰近之兩個金屬氧化物纖維170係彼此互相直接接觸。
依據一些實施例，金屬氧化物纖維170的平均長度介於約20奈米至約500奈米。依據一些實施例，金屬氧化物纖維170的平均直徑介於約1奈米至約90奈米。依據一些實施例，導電層160包括一金屬材料(例如銅)，而金屬氧化物纖維170係由金屬材料之氧化物所製成。依據一些實施例，金屬材料之氧化物包括了氧化銅。依據一些實施例，金屬氧化物纖維140與170為為介電纖維。
依據一些實施例，金屬氧化物纖維170的形成包括氧化導電層160之表面部分。依據一些實施例，導電層160的表面部分係鄰近於頂面162與側壁164。依據一些實施例，表面部分的氧化製程包括於導電層160的表面部分施行一熱氧化製程或一化學氧化製程。
依據一些實施例，化學氧化製程採用氧化溶液(例如過氧化氫)。依據一些實施例，化學氧化製程包括將導電層160浸入於氧化溶液中。依據一些實施例，熱氧化製程係於含氧環境中施行。依據一些實施例，熱氧化製程係於介於約100℃至約300℃之製程溫度範圍下施行。
如第1F圖所示，依據一些實施例，形成介電層180於介電層150上。依據一些實施例，介電層180覆蓋了導電層160與金屬氧化物纖維170。依據一些實施例，介電層180填滿了金屬氧化物纖維170間之間隙G2。
依據一些實施例，介電層180環繞了各個金屬氧化物纖維170。依據一些實施例，金屬氧化物纖維170穿透進入介電層180。依據一些實施例，金屬氧化物纖維170係埋設於介電 層180內。依據一些實施例，金屬氧化物纖維170係直接接觸介電層180。
依據一些實施例，介電層180包括但不限於聚合物(例如聚亞醯胺)、氧化物(例如二氧化矽)、硼磷矽玻璃(BPSG)、旋塗式玻璃(SOG)、未摻雜矽酸鹽玻璃(USG)、氟化矽酸鹽玻璃(FSG)、高密度電漿(HDP)氧化物或電漿增強四乙氧基矽烷(PETEOS)。依據一些實施例，金屬氧化物纖維140與介電層150係由不同材料所製成。
依據一些實施例，介電層180包括由諸如低介電常數或極低介電常數(ELK)材料的多種介電材料所製成之多層。依據一些實施例，介電層180可藉由旋轉塗佈、化學氣相沉積(CVD)、物理氣相沉積(PVD)、原子層沉積(ALD)或其它適用的製程來形成介電層180。
如第1G圖所示，依據一些實施例，移除介電層180之一部分及位於介電層180之此部分下的金屬氧化物纖維170之一部。依據一些實施例，移除製程包括微影製程與蝕刻製程。於移除製程後，依據一些實施例，形成一通孔182於介電層180內並露出了導電層160之一部。
如第1G圖所示，依據一些實施例，形成一接墊(bonding pad)190於介電層180上並延伸進入通孔182內。依據一些實施例，接墊190係電性連結於導電層160與導電結構130。銲墊190包括銅、鋁、鎢、鎳、鈀、金、或其他適當導電材料。依據一些實施例，接墊190係採用鍍敷製程(或沉積製程)、微影製程與蝕刻製程所形成。
如第1H圖所示，依據一些實施例，形成一導電凸塊(conductive bump)C於接墊190上。依據一些實施例，導電凸塊C包括了錫(Sn)或任何適當材料。依據一些實施例，導電凸塊C的形成包括形成一銲錫(solder past)於接墊190上並迴銲(reflow)此銲錫。依據一些實施例，迴銲溫度介於約100℃至約300℃。
依據一些實施例，金屬氧化物纖維140可避免起因於導電結構130與介電層150間之熱膨脹係數(CTE)的不匹配情形所造成之導電結構130與介電層150之間的分層情形。依據一些實施例，金屬氧化物纖維170亦可避免起因於導電層160與介電層180間之熱膨脹係數的不匹配情形所造成之導電層160與介電層180之間的分層情形。
第2A-2F圖為依據一些實施例之形成半導體元件結構200之製程中不同階段之剖面圖。應理解的是，依據一些實施例，半導體元件結構200相似於第1A-1H圖所示之半導體元件結構100，除了半導體元件結構200更具有位於導電結構130上之金屬氧化物層210。
於本實施例中及前述實施例中，相同標號係代表相同或相似構件。因此，具有相同標號之構件之材料與製造方法可參照第1A-1I圖之實施例之相關描述而提供。
如第2A圖所示，依據一些實施例，提供一基板110。如第2A圖所示，依據一些實施例，形成介電層120於半導體基板110上。如第2A圖所示，依據一些實施例，形成一導電結構130於介電層120上。依據一些實施例，導電結構130包括 一導線層(wiring layer)或數個導線層，例如一重分佈層或數個重分佈層。為了簡化目的，第2A圖僅顯示了一導線層，但並非以其為限。導電結構130包括一導電介層物結構或其他適當之導電結構。
依據一些實施例，導電結構130係電性連結於位於基板110之上或之內的元件(未顯示)。依據一些實施例，導電結構130具有一頂面132、數個側壁134與一底面136。依據一些實施例，頂面132係背對於基板110。依據一些實施例，側壁134環繞了頂面134與底面136。導電結構130包括了銅或其他適當導電材料。
如第2A圖所示，依據一些實施例，形成一金屬氧化物層210與數個金屬氧化物纖維140於導電結構130上。依據一些實施例，金屬氧化物層210順應地覆蓋了導電結構130之頂面132與側壁134。依據一些實施例，金屬氧化物纖維140係連續地覆蓋了導電結構130之頂面132與側壁134。
依據一些實施例，金屬氧化物纖維140係形成於金屬氧化物層210上。依據一些實施例，金屬氧化物纖維140一起形成了金屬氧化物纖維層。依據一些實施例，金屬氧化物纖維層具有少於金屬氧化物層210之密度之一密度。依據一些實施例，金屬氧化物纖維140分別具有直接連結於金屬氧化物層210之一端部142。
依據一些實施例，金屬氧化物纖維140係直接接觸了金屬氧化物層210。金屬氧化物纖維140與金屬氧化物層210並沒有形成於導電結構130與其下方之介電層120之間。於一些 實施例中，金屬氧化物層210之厚度T係介於約2奈米至約50奈米之範圍。於一些實施例中，金屬氧化物纖維140的平均長度係大於金屬氧化物層210的厚度T。
於一些實施例中，鄰近之兩個金屬氧化物纖維140係彼此互相直接接觸。依據一些實施例，金屬氧化物纖維140與金屬氧化物層210係由相同材料所製成。依據一些實施例，導電結構130包括一金屬材料(例如銅)，而金屬氧化物纖維140與金屬氧化物層210係由金屬材料之氧化物所製成。依據一些實施例，金屬材料之氧化物包括了氧化銅。
依據一些實施例，金屬氧化物纖維140與金屬氧化物層210的形成包括了氧化導電結構130之表面部分。依據一些實施例，導電結構130的表面部分係鄰近於頂面132與側壁134。依據一些實施例，表面部分的氧化製程包括於導電結構130的表面部分(或於頂面132與側壁134)施行一熱氧化製程或一化學氧化製程。
依據一些實施例，化學氧化製程採用氧化溶液(例如過氧化氫)。依據一些實施例，化學氧化製程包括了將導電結構130浸入於氧化溶液中。依據一些實施例，熱氧化製程係於含氧環境中施行。
依據一些實施例，熱氧化製程係於介於約80℃至300℃之製程溫度範圍下施行。當製程溫度低於80℃時，大體不會形成金屬氧化物纖維140。當製程溫度大於300℃時，將負面地影響了形成於基板100內或上之元件。
於一些實施例中，金屬氧化物層210包括由前述熱 氧化製程或前述化學氧化製程所形成之原生氧化物(native oxide)與非原生氧化物(non-native oxide)。於一些實施例中，金屬氧化物層210包括原生氧化物層。
如第2B圖所示，依據一些實施例，形成介電層150於介電層120上。依據一些實施例，介電層150覆蓋了導電結構130、金屬氧化物纖維140與金屬氧化物層210。依據一些實施例，介電層150填滿了金屬氧化物纖維140之間的間隙G1。
依據一些實施例，介電層150環繞了各個金屬氧化物纖維140。依據一些實施例，金屬氧化物纖維140穿透進入介電層150。依據一些實施例，金屬氧化物纖維140係埋設於介電層150內。依據一些實施例，金屬氧化物纖維140係直接接觸介電層150。
由於金屬氧化物層210與氧化物纖維140係自於導電結構130所形成，介於金屬氧化物層210與導電結構130之間的附著情形係大於介電層150與導電結構130之間的附著情形。介於金屬氧化物纖維140與介電層150之間的邊界區為大的，其改善了介於金屬氧化物纖維140與介電層150之間的附著情形。
由於金屬氧化物纖維140與金屬氧化物層210連結了導電結構130與介電層150之間，可避免導電結構130與介電層150之間的分層情形。因此，改善了半導體元件結構200的良率與可靠度。
依據一些實施例，金屬氧化物纖維140具有大於金屬氧化物纖維140之平均直徑之平均長度。依據一些實施例， 金屬氧化物纖維140的平均長度介於約10奈米至約400奈米。依據一些實施例，金屬氧化物纖維140之平均直徑介於約1奈米至約90奈米。依據一些實施例，金屬氧化物纖維140亦稱為奈米金屬氧化物纖維。
如第2C圖所示，依據一些實施例，移除介電層150之一部分及位於介電層150之此部分之下金屬氧化物纖維140與金屬氧化物層210之一部。依據一些實施例，此移除製程包括微影製程與蝕刻製程。
依據一些實施例，於移除製程後，形成一通孔152。依據一些實施例，此通孔152露出了導電結構130之一部。依據一些實施例，於通孔152內大體沒有金屬氧化物纖維。
如第2C圖所示，依據一些實施例，形成一導電層160於介電層150上並延伸進入通孔152內。依據一些實施例，導電層160係電性連結於導電結構130。依據一些實施例，導電層160包括一導線層與一導電介層物結構。
依據一些實施例，導電層160具有一頂面162與數個側壁164。依據一些實施例，側壁164環繞了頂面162。依據一些實施例，導電層160包括了銅或其他適當導電材料。導電層160採用鍍敷製程(或沉積製程)、微影製程、及蝕刻製程所形成。
如第2C圖所示，依據一些實施例，形成金屬氧化物層220與金屬氧化物纖維170於導電結構160上。依據一些實施例，金屬氧化物纖維170亦稱為奈米金屬氧化物纖維。依據一些實施例，金屬氧化物纖維170與金屬氧化物層220係形成於 導電層160之頂面162與側壁164上。
依據一些實施例，金屬氧化物纖維170與金屬氧化物層220並未形成於導電層160與其下方之介電層150之間。依據一些實施例，金屬氧化物纖維170各具有直接連結於金屬氧化物層220之一端部172。依據一些實施例，金屬氧化物纖維170係直接接觸金屬氧化物層220。於一些實施例中，鄰近之兩個金屬氧化物纖維170係彼此互相直接接觸。
依據一些實施例，金屬氧化物纖維170的平均長度介於約10奈米至約400奈米。依據一些實施例，金屬氧化物纖維170的平均直徑介於約1奈米至約90奈米。依據一些實施例，導電層160包括一金屬材料(例如銅)，而金屬氧化物纖維170與金屬氧化物層220係由金屬材料之氧化物所製成。依據一些實施例，金屬材料之氧化物包括了氧化銅。
依據一些實施例，金屬氧化物纖維170與金屬氧化物層220的形成包括氧化導電層160之表面部分。依據一些實施例，導電層160的表面部分係鄰近於頂面162與側壁164。依據一些實施例，表面部分的氧化製程包括於導電層160的表面部分施行一熱氧化製程或一化學氧化製程。
依據一些實施例，化學氧化製程採用氧化溶液(例如過氧化氫)。依據一些實施例，化學氧化製程包括了將導電層160浸入於氧化溶液中。依據一些實施例，熱氧化製程係於含氧環境中施行。依據一些實施例，熱氧化製程係於介於約80℃至約300℃之製程溫度範圍下施行。
如第2D圖所示，依據一些實施例，形成介電層180 於介電層150上。依據一些實施例，介電層180覆蓋了導電層160、金屬氧化物纖維170與金屬氧化物層220。依據一些實施例，介電層180填滿了金屬氧化物纖維170之間之間隙G2。
依據一些實施例，介電層180環繞了各個金屬氧化物纖維170。依據一些實施例，金屬氧化物纖維170穿透進入介電層180。依據一些實施例，金屬氧化物纖維170係埋設於介電層180內。依據一些實施例，金屬氧化物纖維170係直接接觸介電層180。
如第2E圖所示，依據一些實施例，移除介電層180之一部分、位於介電層180之此部分之下的金屬氧化物纖維170與金屬氧化物層220。依據一些實施例，於移除製程後，形成一通孔182於介電層180內並露出了導電層160之一部。
如第2E圖所示，依據一些實施例，形成一接墊190於介電層180上並延伸進入通孔182內。依據一些實施例，接墊190係電性連結於導電層160與導電結構130。
如第2F圖所示，依據一些實施例，形成一導電凸塊C於接墊190上。依據一些實施例，導電凸塊C包括了錫或任何適當材料。依據一些實施例，導電凸塊C的形成包括形成一銲錫於接墊190上並迴銲此銲錫。依據一些實施例，迴銲溫度介於約100℃至約300℃。
依據一些實施例，金屬氧化物纖維140與金屬氧化物層210可避免起因於導電結構130與介電層150間之熱膨脹係數的不匹配情形所造成之導電結構130與介電層150之間的分層情形。
依據一些實施例，金屬氧化物纖維170與金屬氧化物層220亦可避免起因於導電層160與介電層180間之熱膨脹係數的不匹配情形所造成之導電層160與介電層180之間的分層情形。
第3A-3O圖為依據一些實施例之形成半導體元件結構300之製程中不同階段之剖面圖。如第3A圖所示，依據一些實施例，提供一載板310。依據一些實施例，載板(carrier substrate)310係於後續製程步驟中提供暫時性的機械與結構支撐用。依據一些實施例，載板310包括玻璃、氧化矽、氧化鋁、其組合、及/或相似物。
如第3A圖所示，依據一些實施例，形成黏著層320於載板310上。依據一些實施例，黏著層320包括任何適當黏著材料，例如深紫外光黏膠(UV glue)，其可於暴露於深紫外光(UV light後)失去黏性。黏著層320係採用疊層製程、旋塗製程或其他適合製程而形成。
如第3A圖所示，依據一些實施例，形成保護層330於黏著層320上。依據一些實施例，保護層330係於後續製程中用以提供結合用之結構支撐並幫助降低晶片偏移與凸塊破裂問題。依據一些實施例，保護層330包括聚合物材料，例如聚苯噁唑(Polybenzoxazole；PBO)、聚亞醯胺、或環氧樹脂。依據一些實施例，保護層330採用旋轉塗佈製程或化學氣相沉積製程所形成。
如第3A圖所示，依據一些實施例，形成導電層340於保護層330上。導電層340包括銅及其他適當導電材料。依據 一些實施例，導電層340係採用物理氣相沉積製程或化學氣相沉積製程所形成。
如第3B圖所示，依據一些實施例，形成一罩幕層350。依據一些實施例，罩幕層350具有露出導電層340之通孔352。罩幕層350包括阻劑材料或其他適當材料。
如第3C圖所示，依據一些實施例，形成導電介層物結構360於通孔352內。依據一些實施例，導電介層物結構360亦稱為導電結構。導電介層物結構360包括了銅及其他適當導電材料。
依據一些實施例，導電介層物結構360的形成包括施行一電鍍製程。於其他實施例中，沒有形成導電層340，而導電介層物結構360的形成包括施行沉積製程與平坦化製程。
如第3D圖所示，依據一些實施例，移除罩幕層350。依據一些實施例，藉由將罩幕層350浸於化學溶液中而移除罩幕層350。此化學溶液包括如乳酸乙酯(ethyl lactate)、苯甲醚(anisole)、甲基醋酸丁酯(methyl butyl acetate)、乙酸戊酯(amyl acetate)、環氧樹脂(cresol novolak resin)及/或重氮感光化合物(diazo photoactive compound)。
如第3D圖所示，依據一些實施例，移除為導電介層物結構360所露出之導電層340。依據一些實施例，移除製程包括濕蝕刻製程或乾蝕刻製程。
如第3E圖所示，依據一些實施例，分別形成金屬氧化物纖維372與374於導電層340與導電介層物結構360上。依據一些實施例，金屬氧化物纖維372係形成於導電層340的側壁 342上。
依據一些實施例，金屬氧化物纖維374係形成於導電介層物結構360之頂面362與側壁364上。依據一些實施例，金屬氧化物纖維374並沒有形成於導電層340與導電介層物結構360之間。
依據一些實施例，金屬氧化物纖維372具有連結於導電層340之一端部372a。依據一些實施例，金屬氧化物纖維372係直接接觸導電層340。依據一些實施例，金屬氧化物纖維374分別具有直接連接於導電介層物結構360之一端部374a。依據一些實施例，金屬氧化物纖維374係直接接觸導電介層物結構360。
於一些實施例中，鄰近之兩金屬氧化物纖維372與374係互相接觸。依據一些實施例，導電層340包括一金屬材料(例如銅)，而金屬氧化物纖維372係由金屬材料之氧化物(例如氧化銅)所製成。依據一些實施例，導電介層物結構360包括一金屬材料(例如銅)，而金屬氧化物纖維374係由金屬材料之氧化物(例如氧化銅)所製成。
依據一些實施例，金屬氧化物纖維372與374的形成包括氧化導電層340與導電介層物結構360的表面部分。依據一些實施例，導電層340的表面部分係鄰近於側壁。
依據一些實施例，導電介層物結構360之表面部分係鄰近於導電介層物結構360之頂面362與側壁364。依據一些實施例，表面部分的氧化製程包括於導電層340與導電介層物結構360之表面部分施行一熱氧化製程或一化學氧化製程。
依據一些實施例，化學氧化製程採用氧化溶液(例如過氧化氫)。依據一些實施例，化學氧化製程包括將導電層340與導電介層物結構360浸入氧化溶液中。依據一些實施例，熱氧化製程係於含氧環境中施行。
如第3F圖所示，依據一些實施例，提供一晶片380。依據一些實施例，晶片380亦稱為半導體基板。如第3F圖所示，形成介電層390於晶片380上。如第3F圖所示，依據一些實施例，形成接墊410於介電層390內。依據一些實施例，接墊410係電性連結於形成於晶片380之內或之上的元件(未顯示)。
如第3F圖所示，依據一些實施例，分別形成內連結構420於接墊410上。依據一些實施例，內連結構420包括了導電柱或導電凸塊。
如第3F圖所示，依據一些實施例，形成介電層430於介電層390上並環繞內連結構420。如第3F圖所示，依據一些實施例，晶片380係設置於保護層330上。如第3F圖所示，依據一些實施例，設置黏著層440於保護層330與晶片380之間以接合晶片380與保護層330。
如第3G圖所示，依據一些實施例，形成模塑化合物層450於保護層330上以覆蓋導電層340、導電介層物結構360、金屬氧化物纖維372與374、內連結構420、介電層390與430、黏著層440與晶片380。
依據一些實施例，金屬氧化物纖維372與374穿透進入模塑化合物層450。依據一些實施例，模塑化合物層450包括了聚合物材料。依據一些實施例，模塑化合物層450係採用 模塑製程所形成。
如第3H圖所示，依據一些實施例，移除模塑化合物層450與導電介層物結構360的頂部、與部分之金屬氧化物纖維374。依據一些實施例，移除製程包括化學機械研磨製程。依據一些實施例，於移除製程後，模塑化合物450環繞晶片380。
如第3I圖所示，依據一些實施例，形成介電層460於模塑化合物層450與介電層430上。依據一些實施例，介電層460具有露出導電介層物結構360與內連結構420之數個開口462。
如第3I圖所示，依據一些實施例，形成導電層470於介電層460上並延伸進入開口462內以電性連結導電介層物結構360與內連結構420。依據一些實施例，導電層470包括導線層與導電介層物結構。依據一些實施例，導電層470亦稱為導電結構。依據一些實施例，導電層470包括銅與其他適當導電材料。
如第3J圖所示，依據一些實施例，形成金屬氧化物纖維480於導電層470上。依據一些實施例，金屬氧化物纖維480亦稱為奈米金屬氧化纖維。依據一些實施例，金屬氧化物纖維480係形成導電層470之頂面472與側壁474上。依據一些實施例，金屬氧化物纖維480並沒有形成於導電層470與介電層460之間。
依據一些實施例，導電層470包括金屬材料(例如銅)，而金屬氧化物纖維480係由此金屬材料之氧化物(例如氧化銅)所製成。依據一些實施例，金屬氧化物纖維480的形成包括 氧化導電層470的表面部分。依據一些實施例，表面部分的氧化包括了於導電層470之表面部分施行熱氧化製程或化學氧化製程。
如第3K圖所示，依據一些實施例，形成介電層490於介電層460上。依據一些實施例，介電層490具有露出導電層470之數個開口492。如第3K圖所示，依據一些實施例，形成接墊B於介電層490上並延伸進入開口492以電性連結導電層470。接墊B包括了銅、鋁、鎢、鎳、鈀、金或其他適當導電材料。
如第3L圖所示，依據一些實施例，分別形成導電凸塊C於接墊B上。依據一些實施例，導電凸塊C包括了錫與其他適當材料。依據一些實施例，導電凸塊C的形成包括了形成銲錫於接墊B上與迴銲此銲錫。
依據一些實施例，於迴銲製程中，金屬氧化物纖維372可避免起因於導電層340與模塑化合物層450間之熱膨脹係數的不匹配所造成之導電層340與模塑化合物層450之間的分層。
相似地，依據一些實施例，金屬氧化物纖維374亦可避免起因於導電介層物結構360與模塑化合物層450間之熱膨脹係數的不匹配所造成之導電介層物結構360與模塑化合物層450之間的分層。
依據一些實施例，金屬氧化物纖維480可避免起因於導電層470與介電層490間之熱膨脹係數的不匹配所造成之導電層470與介電層490之間的分層。
如第3M圖所示，依據一些實施例，上下顛倒地翻轉晶片380。如第3M圖所示，依據一些實施例，移除載板310與黏著層320。如第3N圖所示，依據一些實施例，移除部分之保護層330以於保護層內形成開口332。依據一些實施例，開口332露出了導電層340。依據一些實施例，移除製程包括微影製程、蝕刻製程或物理製程(mechanical drill or laser drill)。
如第3O圖所示，依據一些實施例，設置晶片封裝物500於晶片380與模塑化合物層450上以接合導電層340。依據一些實施例，晶片封裝物500包括晶片510、電路基板520、導電凸塊530與540與底膠層550。依據一些實施例，晶片510係藉由其間之導電凸塊530而接合於電路基板520，晶片510亦可以打線接合(wire bond)方式與電路基板520連接然後封裝外圍覆蓋模塑化合物(molding compound)。
依據一些實施例，電路基板520包括一複合介電層522、導線層524、導電介層物結構526與接墊528。依據一些實施例，複合介電層522具有相互堆疊之介電層。依據一些實施例，導線層524與導電介層物結構526係埋設於複合介電層522內。
依據一些實施例，接墊528係形成於電路基板520之兩相對表面521a與521b上。依據一些實施例，導電介層物結構526電性連結於導線層524之間或電性連結導線層524與接墊528。依據一些實施例，導電凸塊530連結晶片510與接墊528。
依據一些實施例，底膠層550係填入於晶片510與電路基板520之間。依據一些實施例，底膠層550包括一聚合物 材料。依據一些實施例，導電凸塊540連結接墊528與導電層340。如第3O圖所示，依據一些實施例，底膠層560係填入於電路基板520與保護層330之間。依據一些實施例，底膠層560包括聚合物材料。
如第3O圖所示，依據一些實施例，於晶片510與電路基板520上模塑形成模塑化合物層570。依據一些實施例，模塑化合物層570係用於保護晶片510免於後續製程中受到毀損。依據部分實施例，模塑化合物層570包括了聚合物材料。依據一些實施例，於接墊B上沒有形成金屬氧化物纖維。
第4圖為依據一些實施例之半導體元件結構600之剖面圖。依據一些實施例，半導體元件結構600相似於第3O圖所示之半導體元件結構300，除了半導體元件結構600更包括了金屬氧化物層610、620、630。
如第4圖所示，依據一些實施例，金屬氧化物層610係形成於導電層340之側壁342上。依據一些實施例，金屬氧化物纖維372係連結於金屬氧化物層610。依據一些實施例，金屬氧化物纖維372與金屬氧化物層610係由相同材料所製成。依據一些實施例，金屬氧化物層620係形成於導電介層物結構360之側壁364上。
依據一些實施例，金屬氧化物纖維374係連結於金屬氧化物層620。依據一些實施例，金屬氧化物纖維374與金屬氧化物層620係由相同材料所製成。依據一些實施例，金屬氧化物層630係形成於導電層470之側壁上。依據一些實施例，金屬氧化物纖維480係連結於金屬氧化物層630。依據一些實施 例，金屬氧化物纖維480與金屬氧化物層630係由相同材料製成。
依據一些實施例，提供了半導體元件結構與其形成方法。此方法(形成半導體元件結構)形成了金屬氧化物纖維於導電結構上以連接導電結構與介電層，而介電層覆蓋了導電結構與金屬氧化物纖維。因此，金屬氧化物纖維避免了導電結構與介電層之間的分層。其結果為，改善了半導體元件結構之良率與可靠度。
依據一些實施例，提供了一種半導體元件結構。此半導體元件結構包括一基板。此半導體元件結構包括位於該基板上之一導電結構。此半導體元件結構包括位於該導電結構上之複數個第一金屬氧化物纖維。此半導體元件結構包括位於該基板上並覆蓋該導電結構與該些第一金屬氧化物纖維之一介電層。該介電層填滿了該些第一金屬氧化物纖維之間之間隙。
依據一些實施例，提供了一種半導體元件結構。此半導體元件結構包括一基板。此半導體元件結構包括位於該基板上之一第一導電結構。此半導體元件結構包括位於該第一導電結構上之一金屬氧化物層。此半導體元件結構包括連結於該金屬氧化物層之複數個第一金屬氧化物纖維。該些第一金屬氧化物纖維與該金屬氧化物層係由相同材料製成。此半導體元件結構包括位於該基板上並覆蓋該第一導電結構、該金屬氧化物層與該些第一金屬氧化物纖維之一介電層。
依據一些實施例，提供了一種半導體元件結構之 形成方法。此形成方法包括形成一導電結構於一基板上。此形成方法包括形成複數個第一金屬氧化物纖維於該導電結構上。此形成方法包括形成一介電層於該基板上，以覆蓋該導電結構與該些第一金屬氧化物纖維。該介電層填滿該些金屬氧化物纖維之間的間隙內。
前述內文概述了許多實施例的特徵，使本技術領域中具有通常知識者可以從各個方面更佳地了解本揭露。本技術領域中具有通常知識者應可理解，且可輕易地以本揭露為基礎來設計或修飾其他製程及結構，並以此達到相同的目的及/或達到與在此介紹的實施例等相同之優點。本技術領域中具有通常知識者也應了解這些相等的結構並未背離本揭露的發明精神與範圍。在不背離本揭露的發明精神與範圍之前提下，可對本揭露進行各種改變、置換或修改。
100‧‧‧半導體元件結構
110‧‧‧基板
120‧‧‧介電層
130‧‧‧導電結構
140‧‧‧金屬氧化物纖維
150‧‧‧介電層
G1‧‧‧間隙

Claims (10)

  1. 一種半導體元件結構，包括：一基板；一導電結構，位於該基板上；複數個第一金屬氧化物纖維，位於該導電結構上；及一介電層，位於該基板上並覆蓋該導電結構與該些第一金屬氧化物纖維，其中該介電層填滿了該些第一金屬氧化物纖維之間之間隙。
  2. 如申請專利範圍第1項所述之半導體元件結構，其中該導電結構包括一金屬材料，而該些第一金屬氧化物纖維係由該金屬材料之氧化物所製成。
  3. 如申請專利範圍第1項所述之半導體元件結構，其中該些第一金屬氧化物纖維係直接接觸該導電結構與該介電層。
  4. 如申請專利範圍第1項所述之半導體元件結構，其中該介電層包括聚合物材料或氧化物材料。
  5. 一種半導體元件結構，包括：一基板；一第一導電結構，位於該基板上；一金屬氧化物層，位於該第一導電結構上；複數個第一金屬氧化物纖維，連結於該金屬氧化物層，其中該些第一金屬氧化物纖維與該金屬氧化物層係由相同材料製成；及一介電層，位於該基板上並覆蓋該第一導電結構、該金屬氧化物層與該些第一金屬氧化物纖維。
  6. 如申請專利範圍第5項所述之半導體元件結構，其中該第一導電結構具有一頂面與一側壁，而該金屬氧化物層與該些第一金屬氧化物纖維係位於該頂面與該側壁上。
  7. 如申請專利範圍第5項所述之半導體元件結構，其中該第一導電結構包括一金屬材料，而該些第一金屬氧化物纖維與該金屬氧化物層係由相同金屬材料所製成。
  8. 一種半導體元件結構之形成方法，包括：形成一導電結構於一基板上；形成複數個第一金屬氧化物纖維於該導電結構上；及形成一介電層於該基板上，以覆蓋該導電結構與該些第一金屬氧化物纖維，其中該介電層填滿該些金屬氧化物纖維之間的間隙內。
  9. 如申請專利範圍第8項所述之半導體元件結構之形成方法，其中形成該些第一金屬氧化物纖維包括：氧化該導電結構之一表面部分。
  10. 如申請專利範圍第9項所述之半導體元件結構之形成方法，其中氧化該導電結構之該表面部分包括：於該導電結構之該表面部分上施行一熱氧化製程或一化學氧化製程。
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