JP2008527727A5 - - Google Patents
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- Publication number
- JP2008527727A5 JP2008527727A5 JP2007550572A JP2007550572A JP2008527727A5 JP 2008527727 A5 JP2008527727 A5 JP 2008527727A5 JP 2007550572 A JP2007550572 A JP 2007550572A JP 2007550572 A JP2007550572 A JP 2007550572A JP 2008527727 A5 JP2008527727 A5 JP 2008527727A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- dielectric
- product
- bond pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/032,975 US7282433B2 (en) | 2005-01-10 | 2005-01-10 | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
| US11/032,975 | 2005-01-10 | ||
| PCT/US2006/000881 WO2006074470A1 (en) | 2005-01-10 | 2006-01-10 | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008527727A JP2008527727A (ja) | 2008-07-24 |
| JP2008527727A5 true JP2008527727A5 (enExample) | 2008-09-11 |
| JP5321873B2 JP5321873B2 (ja) | 2013-10-23 |
Family
ID=36282804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007550572A Active JP5321873B2 (ja) | 2005-01-10 | 2006-01-10 | 接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7282433B2 (enExample) |
| EP (2) | EP3220416B1 (enExample) |
| JP (1) | JP5321873B2 (enExample) |
| KR (1) | KR100918129B1 (enExample) |
| TW (1) | TWI387018B (enExample) |
| WO (1) | WO2006074470A1 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
| US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
| US7425499B2 (en) | 2004-08-24 | 2008-09-16 | Micron Technology, Inc. | Methods for forming interconnects in vias and microelectronic workpieces including such interconnects |
| US7083425B2 (en) | 2004-08-27 | 2006-08-01 | Micron Technology, Inc. | Slanted vias for electrical circuits on circuit boards and other substrates |
| US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
| US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| US7282433B2 (en) * | 2005-01-10 | 2007-10-16 | Micron Technology, Inc. | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
| TW200638497A (en) * | 2005-04-19 | 2006-11-01 | Elan Microelectronics Corp | Bumping process and bump structure |
| US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
| US20070045812A1 (en) * | 2005-08-31 | 2007-03-01 | Micron Technology, Inc. | Microfeature assemblies including interconnect structures and methods for forming such interconnect structures |
| US7271086B2 (en) * | 2005-09-01 | 2007-09-18 | Micron Technology, Inc. | Microfeature workpieces and methods of forming a redistribution layer on microfeature workpieces |
| US7622377B2 (en) | 2005-09-01 | 2009-11-24 | Micron Technology, Inc. | Microfeature workpiece substrates having through-substrate vias, and associated methods of formation |
| US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US20070145367A1 (en) * | 2005-12-27 | 2007-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit structure |
| KR100731081B1 (ko) * | 2005-12-30 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 패시베이션 형성 방법 |
| US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
| US7745319B2 (en) | 2006-08-22 | 2010-06-29 | Micron Technology, Inc. | System and method for fabricating a fin field effect transistor |
| US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
| US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
| DE102006051491A1 (de) * | 2006-10-31 | 2008-05-15 | Advanced Micro Devices, Inc., Sunnyvale | Metallisierungsschichtstapel mit einer Aluminiumabschlussmetallschicht |
| WO2008054680A2 (en) * | 2006-10-31 | 2008-05-08 | Advanced Micro Devices, Inc. | A metallization layer stack without a terminal aluminum metal layer |
| US8981548B2 (en) | 2007-05-25 | 2015-03-17 | Stats Chippac Ltd. | Integrated circuit package system with relief |
| SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
| US7939949B2 (en) * | 2007-09-27 | 2011-05-10 | Micron Technology, Inc. | Semiconductor device with copper wirebond sites and methods of making same |
| US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| US8084854B2 (en) | 2007-12-28 | 2011-12-27 | Micron Technology, Inc. | Pass-through 3D interconnect for microelectronic dies and associated systems and methods |
| KR101037832B1 (ko) * | 2008-05-09 | 2011-05-31 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
| US8253230B2 (en) | 2008-05-15 | 2012-08-28 | Micron Technology, Inc. | Disabling electrical connections using pass-through 3D interconnects and associated systems and methods |
| WO2009146373A1 (en) * | 2008-05-28 | 2009-12-03 | Mvm Technoloiges, Inc. | Maskless process for solder bumps production |
| JP2010251687A (ja) * | 2009-03-26 | 2010-11-04 | Sanyo Electric Co Ltd | 半導体装置 |
| US8148257B1 (en) * | 2010-09-30 | 2012-04-03 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| KR101210352B1 (ko) | 2011-02-15 | 2012-12-10 | 에스케이하이닉스 주식회사 | 반도체 패키지 및 그의 제조방법 |
| WO2013033034A2 (en) * | 2011-08-26 | 2013-03-07 | Lawrence Livermore National Security, Llc | Method for making high-density electrical interconnections using rivet bonds |
| US20130140671A1 (en) * | 2011-12-06 | 2013-06-06 | Win Semiconductors Corp. | Compound semiconductor integrated circuit with three-dimensionally formed components |
| TWI473226B (zh) * | 2012-01-09 | 2015-02-11 | Win Semiconductors Corp | 具有三維元件之化合物半導體積體電路 |
| CN103208472B (zh) * | 2012-01-12 | 2016-03-02 | 稳懋半导体股份有限公司 | 具有三维元件的复合物半导体集成电路 |
| US9609752B1 (en) | 2013-03-15 | 2017-03-28 | Lockheed Martin Corporation | Interconnect structure configured to control solder flow and method of manufacturing of same |
| US9487396B2 (en) * | 2014-09-04 | 2016-11-08 | Invensense, Inc. | Release chemical protection for integrated complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical (MEMS) devices |
| US9627224B2 (en) * | 2015-03-30 | 2017-04-18 | Stmicroelectronics, Inc. | Semiconductor device with sloped sidewall and related methods |
| US11721784B2 (en) | 2017-03-30 | 2023-08-08 | Vuereal Inc. | High efficient micro devices |
| CN117558739A (zh) | 2017-03-30 | 2024-02-13 | 维耶尔公司 | 垂直固态装置 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5114826A (en) * | 1989-12-28 | 1992-05-19 | Ibm Corporation | Photosensitive polyimide compositions |
| US5773359A (en) | 1995-12-26 | 1998-06-30 | Motorola, Inc. | Interconnect system and method of fabrication |
| US5749997A (en) * | 1995-12-27 | 1998-05-12 | Industrial Technology Research Institute | Composite bump tape automated bonding method and bonded structure |
| US5706977A (en) * | 1996-03-04 | 1998-01-13 | The Procter & Gamble Company | Modular display device |
| US5736456A (en) | 1996-03-07 | 1998-04-07 | Micron Technology, Inc. | Method of forming conductive bumps on die for flip chip applications |
| US5702977A (en) * | 1997-03-03 | 1997-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer |
| US6441487B2 (en) | 1997-10-20 | 2002-08-27 | Flip Chip Technologies, L.L.C. | Chip scale package using large ductile solder balls |
| US6251528B1 (en) * | 1998-01-09 | 2001-06-26 | International Business Machines Corporation | Method to plate C4 to copper stud |
| US6107180A (en) | 1998-01-30 | 2000-08-22 | Motorola, Inc. | Method for forming interconnect bumps on a semiconductor die |
| KR19990083024A (ko) * | 1998-04-08 | 1999-11-25 | 윌리엄 비. 켐플러 | 구리 메탈리제이션를 위한 po 플로우 |
| US6268114B1 (en) | 1998-09-18 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for forming fine-pitched solder bumps |
| DE19843624C1 (de) * | 1998-09-23 | 2000-06-15 | Siemens Ag | Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung |
| US6130141A (en) | 1998-10-14 | 2000-10-10 | Lucent Technologies Inc. | Flip chip metallization |
| US6500750B1 (en) * | 1999-04-05 | 2002-12-31 | Motorola, Inc. | Semiconductor device and method of formation |
| US6251775B1 (en) | 1999-04-23 | 2001-06-26 | International Business Machines Corporation | Self-aligned copper silicide formation for improved adhesion/electromigration |
| US6133136A (en) | 1999-05-19 | 2000-10-17 | International Business Machines Corporation | Robust interconnect structure |
| JP4420538B2 (ja) * | 1999-07-23 | 2010-02-24 | アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド | ウェーハパッケージの製造方法 |
| US6423625B1 (en) | 1999-08-30 | 2002-07-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of improving the bondability between Au wires and Cu bonding pads |
| KR100306842B1 (ko) * | 1999-09-30 | 2001-11-02 | 윤종용 | 범프 패드에 오목 패턴이 형성된 재배치 웨이퍼 레벨 칩 사이즈 패키지 및 그 제조방법 |
| US6451681B1 (en) * | 1999-10-04 | 2002-09-17 | Motorola, Inc. | Method of forming copper interconnection utilizing aluminum capping film |
| JP2001196413A (ja) | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置、該半導体装置の製造方法、cmp装置、及びcmp方法 |
| TW441059B (en) * | 2000-05-10 | 2001-06-16 | Siliconware Precision Industries Co Ltd | Semiconductor package substrate structure |
| US6294471B1 (en) * | 2000-09-27 | 2001-09-25 | Vanguard International Semiconductor Corporation | Method of eliminating dishing effect in polishing of dielectric film |
| US6534396B1 (en) * | 2000-10-10 | 2003-03-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterned conductor layer pasivation method with dimensionally stabilized planarization |
| TW449813B (en) | 2000-10-13 | 2001-08-11 | Advanced Semiconductor Eng | Semiconductor device with bump electrode |
| KR100370238B1 (ko) | 2000-10-20 | 2003-01-30 | 삼성전자 주식회사 | 반도체 소자의 본드패드 및 그 형성방법 |
| US6542270B2 (en) * | 2000-12-08 | 2003-04-01 | Motorola, Inc. | Interference-robust coded-modulation scheme for optical communications and method for modulating illumination for optical communications |
| US6534863B2 (en) | 2001-02-09 | 2003-03-18 | International Business Machines Corporation | Common ball-limiting metallurgy for I/O sites |
| JP2003100744A (ja) * | 2001-09-21 | 2003-04-04 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| US20030116845A1 (en) | 2001-12-21 | 2003-06-26 | Bojkov Christo P. | Waferlevel method for direct bumping on copper pads in integrated circuits |
| TW531874B (en) * | 2002-04-11 | 2003-05-11 | Taiwan Semiconductor Mfg | Method for manufacturing pre-solder bumps of buildup substrate |
| US6596619B1 (en) | 2002-05-17 | 2003-07-22 | Taiwan Semiconductor Manufacturing Company | Method for fabricating an under bump metallization structure |
| TW557562B (en) * | 2002-08-12 | 2003-10-11 | Via Tech Inc | Flip chip bonding structure and technology |
| JP2004281491A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体装置及びその製造方法 |
| US20040232560A1 (en) * | 2003-05-22 | 2004-11-25 | Chao-Yuan Su | Flip chip assembly process and substrate used therewith |
| JP2004356453A (ja) * | 2003-05-30 | 2004-12-16 | Trecenti Technologies Inc | 半導体装置およびその製造方法 |
| US7282433B2 (en) * | 2005-01-10 | 2007-10-16 | Micron Technology, Inc. | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
-
2005
- 2005-01-10 US US11/032,975 patent/US7282433B2/en not_active Expired - Lifetime
-
2006
- 2006-01-10 EP EP17163986.7A patent/EP3220416B1/en active Active
- 2006-01-10 EP EP06718008.3A patent/EP1842233B1/en active Active
- 2006-01-10 WO PCT/US2006/000881 patent/WO2006074470A1/en not_active Ceased
- 2006-01-10 JP JP2007550572A patent/JP5321873B2/ja active Active
- 2006-01-10 TW TW095100929A patent/TWI387018B/zh active
-
2007
- 2007-08-10 KR KR1020077018441A patent/KR100918129B1/ko active Active
- 2007-10-15 US US11/872,607 patent/US7528064B2/en not_active Expired - Lifetime
-
2009
- 2009-03-23 US US12/409,305 patent/US7939948B2/en not_active Expired - Lifetime
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