JP4994607B2 - ウエハレベルチップスケールパッケージ製造方法 - Google Patents
ウエハレベルチップスケールパッケージ製造方法 Download PDFInfo
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- JP4994607B2 JP4994607B2 JP2005162845A JP2005162845A JP4994607B2 JP 4994607 B2 JP4994607 B2 JP 4994607B2 JP 2005162845 A JP2005162845 A JP 2005162845A JP 2005162845 A JP2005162845 A JP 2005162845A JP 4994607 B2 JP4994607 B2 JP 4994607B2
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- wafer
- metal layer
- forming
- hole
- electrode metal
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- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 60
- 238000007747 plating Methods 0.000 claims description 59
- 239000010953 base metal Substances 0.000 claims description 28
- 239000000872 buffer Substances 0.000 claims description 24
- 238000009713 electroplating Methods 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C25D5/02—Electroplating of selected surface areas
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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Description
30 ウエハ
30a チップ領域
30b 端部領域
31 チップパッド
32 シリコン基板
33 不活性層
34 半導体チップ
35 表面
36 スクライブレーン
37 孔
38 絶縁層
39 裏面
40 電気接続電極
41 ベース金属層
42 電極金属層
43 メッキバンプ
51 フォトマスク
52 窓
53 研摩機
54 バッファ用テープ
55 開口
56 切削機
60 メッキ槽
61 陰極
62 陽極
63 メッキ液
Claims (20)
- 第1面及び第2面と、前記第1面にチップパッドを有する複数の集積回路チップと、前記集積回路チップ間を走るスクライブレーンとを有するウエハを備える段階と、
前記ウエハの第1面に前記チップパッドを貫通する孔を形成する段階と、
前記ウエハの第1面に前記孔の内面を覆うベース金属層を形成する段階と、
前記孔を充填して前記チップパッドに電極金属層を形成する段階と、
前記ウエハの第1面に、紫外線テープである臨時バッファ用テープを貼る段階と、
前記ウエハの第2面を研磨し、前記電極金属層を前記ウエハの第2面を介して露出する段階と、
前記ウエハ第2面を介して露出した前記電極金属層にメッキバンプを形成する段階と、
前記電極金属層間に位置する前記ベース金属層を除去する段階と、
前記スクライブレーンに沿って前記ウエハを分離する段階と、
を含むことを特徴とするウエハレベルチップスケールパッケージ製造方法。 - 前記孔の内面に絶縁層を形成する段階をさらに含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記孔は、レーザードリル孔あけ、湿式エッチング及び乾燥式エッチングのいずれか一つにより形成されたことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ベース金属層は、クロム、チタニウム、銀、金、銅、ニッケル、パラジウム、白金及びそれらの合金から選ばれた少なくとも一つから構成されていることを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記電極金属層は、銀、金、銅、ニッケル、パラジウム、白金及びそれらの合金から選ばれた少なくとも一つの物質で構成されていることを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記臨時バッファ用テープは、メッキ電極用の少なくとも一つの開口を含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記孔を形成する段階は、メッキ電極用の少なくとも一つの孔を形成する段階を含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記電極金属層を形成する段階は、メッキ電極用の孔に金属層を形成する段階を含むことを特徴とする請求項7に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記メッキバンプを形成する段階は、前記ウエハの第2面がメッキ液に接するように前記ウエハをメッキ液に供給する段階を含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記メッキバンプを形成する段階は、メッキ液に陽極を供給するとともに陰極と電極金属層とを接続させる段階をさらに含むことを特徴とする請求項9に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記メッキバンプは、金、ニッケル、銅及びはんだから選ばれた少なくとも一つの物質で構成されていることを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハの第1面から前記臨時バッファ用テープを除去する段階をさらに含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 第1面及び第2面と、前記第1面にチップパッドとを有するウエハを備える段階と、
前記ウエハに、前記チップパッドを貫通するブラインド孔を形成する段階と、
前記ウエハの第1面と前記孔の内面とにベース金属層を形成する段階と、
前記ブラインド孔に電極金属層を充填する段階と、
前記ウエハの第1面に、紫外線テープである臨時バッファ用テープを貼る段階と、
前記ウエハの一部を研磨し、前記電極金属層を、前記ウエハの第2面に露出する段階と、
前記ウエハの第2面に露出した前記電極金属層にメッキバンプを形成する段階と、
を含むことを特徴とするウエハレベルチップスケールパッケージ製造方法。 - 前記ウエハから前記ベース金属層の一部を除去する段階をさらに含むことを特徴とする請求項13に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハを個々のパッケージに分離する段階をさらに含むことを特徴とする請求項13に記載のウエハレベルチップスケールパッケージ製造方法。
- 第1面及び第2面を有するウエハを備える段階と、
前記ウエハの第1面にブラインド孔を形成する段階と、
前記孔に電極金属層を充填する段階と、
前記ウエハの第1面に、紫外線テープである臨時バッファ用テープを貼る段階と、
前記ウエハの一部を研磨し、前記電極金属層を、前記ウエハの第2面を介して露出する段階と、
前記ウエハの第2 面に露出した前記電極金属層にバンプを電気メッキする段階と、
を含むことを特徴とするウエハレベルチップスケールパッケージ製造方法。 - 前記ウエハを研磨して前記電極金属層が前記ウエハの第2面を介して露出する段階をさらに含むことを特徴とする請求項16の記載のウエハレベルチップスケールパッケージ製
造方法。 - 前記ウエハは、シリコン物質で構成されていることを特徴とする請求項16に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハを個々のパッケージに分離することを特徴とする請求項16に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記電極金属層は、ブラインド孔を充填するともに前記ブラインド孔から突き出ていること特徴とする請求項16に記載のウエハレベルチップスケールパッケージ製造方法。
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KR1020040044050A KR100618543B1 (ko) | 2004-06-15 | 2004-06-15 | 웨이퍼 레벨 적층 패키지용 칩 스케일 패키지 제조 방법 |
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US6506633B1 (en) * | 2002-02-15 | 2003-01-14 | Unimicron Technology Corp. | Method of fabricating a multi-chip module package |
JP2003273155A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4110390B2 (ja) * | 2002-03-19 | 2008-07-02 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
TWI229435B (en) * | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
JP3595323B2 (ja) * | 2002-11-22 | 2004-12-02 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
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US20050277293A1 (en) | 2005-12-15 |
JP2006005343A (ja) | 2006-01-05 |
US7524763B2 (en) | 2009-04-28 |
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