JP2006005343A - ウエハレベルチップスケールパッケージ製造方法 - Google Patents
ウエハレベルチップスケールパッケージ製造方法 Download PDFInfo
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- JP2006005343A JP2006005343A JP2005162845A JP2005162845A JP2006005343A JP 2006005343 A JP2006005343 A JP 2006005343A JP 2005162845 A JP2005162845 A JP 2005162845A JP 2005162845 A JP2005162845 A JP 2005162845A JP 2006005343 A JP2006005343 A JP 2006005343A
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- H01L2924/14—Integrated circuits
Abstract
【解決手段】第1面35及び第2面39と、前記第1面にチップパッドを有する複数の集積回路チップ34と、前記集積回路チップ間を走るスクライブレーン36とを有するウエハ30を備える段階と、前記ウエハの第1面に前記チップパッドを貫通する孔を形成する段階と、前記ウエハの第1面に前記孔の内面を覆うベース金属層41を形成する段階と、前記孔を充填して前記チップパッドに電極金属層42を形成する段階と、前記ウエハの第2面を研磨し、前記電極金属層を前記ウエハの第2面を介して露出する段階と、前記ウエハ第2面を介して露出した前記電極金属層にメッキバンプ43を形成する段階と、前記電極金属層間に位置するベース金属層を除去する段階と、前記スクライブレーンに沿って前記ウエハを分離する段階とを含む。
【選択図】図10
Description
30 ウエハ
30a チップ領域
30b 端部領域
31 チップパッド
32 シリコン基板
33 不活性層
34 半導体チップ
35 表面
36 スクライブレーン
37 孔
38 絶縁層
39 裏面
40 電気接続電極
41 ベース金属層
42 電極金属層
43 メッキバンプ
51 フォトマスク
52 窓
53 研摩機
54 バッファ用テープ
55 開口
56 切削機
60 メッキ槽
61 陰極
62 陽極
63 メッキ液
Claims (22)
- 第1面及び第2面と、前記第1面にチップパッドを有する複数の集積回路チップと、前記集積回路チップ間を走るスクライブレーンとを有するウエハを備える段階と、
前記ウエハの第1面に前記チップパッドを貫通する孔を形成する段階と、
前記ウエハの第1面に前記孔の内面を覆うベース金属層を形成する段階と、
前記孔を充填して前記チップパッドに電極金属層を形成する段階と、
前記ウエハの第2面を研磨し、前記電極金属層を前記ウエハの第2面を介して露出する段階と、
前記ウエハ第2面を介して露出した前記電極金属層にメッキバンプを形成する段階と、
前記電極金属層間に位置するベース金属層を除去する段階と、
前記スクライブレーンに沿って前記ウエハを分離する段階と、
を含むことを特徴とするウエハレベルチップスケールパッケージ製造方法。 - 前記孔の内面に絶縁層を形成する段階をさらに含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記孔は、レーザードリル孔あけ、湿式エッチング及び乾燥式エッチングのいずれか一つにより形成されたことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ベース金属層は、クロム、チタニウム、銀、金、銅、ニッケル、パラジウム、白金及びそれらの合金から選ばれた少なくとも一つから構成されていることを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記電極金属層は、銀、金、銅、ニッケル、パラジウム、白金及びそれらの合金から選ばれた少なくとも一つの物質で構成されていることを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハの第1面に臨時バッファ用テープを貼る段階をさらに含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記臨時バッファ用テープは、紫外線テープであることを特徴とする請求項6に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記臨時バッファ用テープは、メッキ電極用の少なくとも一つの開口を含むことを特徴とする請求項6に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記孔を形成する段階は、メッキ電極用の少なくと一つの孔を形成する段階を含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記電極金属層を形成する段階は、メッキ電極用の孔に金属層を形成する段階を含むことを特徴とする請求項9に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記メッキバンプを形成する段階は、前記ウエハの第2面がメッキ液に接するように前記ウエハをメッキ液に供給する段階を含むことを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記メッキバンプを形成する段階は、メッキ液に陰極を供給するとともに陽極と電極金属層とを接続させる段階をさらに含むことを特徴とする請求項11に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記メッキバンプは、金、ニッケル、銅及びはんだから選ばれた少なくとも一つの物質で構成されていることを特徴とする請求項1に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハの第1面から前記臨時バッファ用テープを除去する段階をさらに含むことを特徴とする請求項6に記載のウエハレベルチップスケールパッケージ製造方法。
- 第1面及び第2面と、前記第1面にチップパッドとを有するウエハを備える段階と、
前記ウエハに、前記チップパッドを貫通するブラインド孔を形成する段階と、
前記ウエハの第1面と前記孔の内面とに金属層を形成する段階と、
前記ブラインド孔に電極金属層を充填する段階と、
前記ウエハの一部を研磨し、前記電極金属層を、前記ウエハの第2面に露出する段階と、
前記ウエハの第2面に露出した前記電極金属層にメッキバンプを形成する段階と、
を含むことを特徴とするウエハレベルチップスケールパッケージ製造方法。 - 前記ウエハからベース金属層の一部を除去する段階をさらに含むことを特徴とする請求項15に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハを個々のパッケージに分離する段階をさらに含むことを特徴とする請求項15に記載のウエハレベルチップスケールパッケージ製造方法。
- 第1面及び第2面を有するウエハを備える段階と、
前記ウエハの第1面にブラインド孔を形成する段階と、
前記孔に電極金属層を充填する段階と、
前記ウエハの一部を研磨し、前記電極金属層を、前記ウエハの第2面を介して露出する段階と、
前記ウエハの第2面に露出した前記電極金属層にバンプを電気メッキする段階と、
を含むことを特徴とするウエハレベルチップスケールパッケージ製造方法。 - 前記ウエハを研磨して前記電極金属層が前記ウエハの第2面を介して露出する段階をさらに含むことを特徴とする請求項18の記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハは、シリコン物質で構成されていることを特徴とする請求項18に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記ウエハを個々のパッケージに分離することを特徴とする請求項18に記載のウエハレベルチップスケールパッケージ製造方法。
- 前記電極金属層は、ブラインド孔を充填するともに前記ブラインド孔から突き出ていること特徴とする請求項18に記載のウエハレベルチップスケールパッケージ製造方法。
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US7524763B2 (en) | 2009-04-28 |
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