TW531874B - Method for manufacturing pre-solder bumps of buildup substrate - Google Patents

Method for manufacturing pre-solder bumps of buildup substrate Download PDF

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Publication number
TW531874B
TW531874B TW91107387A TW91107387A TW531874B TW 531874 B TW531874 B TW 531874B TW 91107387 A TW91107387 A TW 91107387A TW 91107387 A TW91107387 A TW 91107387A TW 531874 B TW531874 B TW 531874B
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TW
Taiwan
Prior art keywords
solder
layer
substrate
patent application
manufacturing
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Application number
TW91107387A
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Chinese (zh)
Inventor
Pei-Haw Tsao
Chender Huang
Jones Wang
Ken Chen
Hank Huang
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Taiwan Semiconductor Mfg
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Priority to TW91107387A priority Critical patent/TW531874B/en
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Publication of TW531874B publication Critical patent/TW531874B/en

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Abstract

The present invention discloses a method for manufacturing pre-solder bumps of a buildup substrate. In the present invention, a non-solder-wetted carrier is covered by an Au layer and the Au layer is used as a seed layer. A Cu layer or a Ti layer is then formed on the seed layer and a portion of the Au layer is exposed. Then, a black oxide treatment is performed on the Cu layer or the Ti layer to make the Cu layer or the Ti layer insulating and non-solder, and a plurality of solder bumps are plated onto the exposed Au layer. Subsequently, the carrier is turned upside down and the solder bumps thereon are aimed at openings having flux on the buildup substrate, and a reflow step is performed on the solder bumps. The Au layer is dissolved by tin (Sn) rapidly, namely, when tin contacts with the carrier, the solder bumps fall from the carrier, so that solder balls are formed on the buildup substrate. Because of the solder bumps are formed by plating, so that the uniformity of the solder bumps is high and the yield is improved. Therefore, the present invention can be applied for the manufacture of pre-solder bumps with fine pitch.

Description

531874 A7 B7 五、發明說明() 發明領域: (請先閲讀背面之注意事項再填寫本頁) 本發明係有關於一種增層基板(Buildup Substrate)之前 鲜锡球(Pre-solder Bump)的製造方法,特別是有關於一種 ^ $平面載板(Carder)來製作增層基板之前銲錫球的方 法。 發明背景: 隨著半導體製程技術的快速發展,積體電路(1C)之規 才莫也邁入了極大型積體電路(Ultra Large Scale Integrati〇rl ; ulsi)的世代。為因應極大型積體電路尺寸的 持績縮小與高輸入/輸出(Input/Output ; I/O)數,以及因為 積集度的大幅增加所伴隨而生之高散熱能力與優良效能 的要求,迫使電子封裝技術朝向提高構裝密度、縮短傳輸 距離、降低傳遞遲滞現象、減小構裝尺寸、以及提升高頻 雜訊的控制能力等方向發展。在目前的封裝製程中,廣為 採用之封裝技術主要有晶片尺寸封裝(Chip Scale531874 A7 B7 V. Description of the invention () Field of invention: (Please read the notes on the back before filling this page) The present invention relates to the manufacture of a pre-solder bump before a buildup substrate The method, in particular, relates to a method for manufacturing a solder ball before a build-up substrate by using a planar carrier. Background of the Invention: With the rapid development of semiconductor process technology, the rules of integrated circuit (1C) have also entered the generation of ultra large scale integrated circuits (Ultra Large Scale IntegratiOrl; ulsi). In order to respond to the reduction in the size of very large integrated circuits and the high number of input / output (I / O), as well as the requirements for high heat dissipation and excellent efficiency accompanied by a large increase in accumulation, The electronic packaging technology is being forced to develop in the direction of increasing the density of the package, shortening the transmission distance, reducing the phenomenon of transmission delay, reducing the size of the package, and improving the control ability of high-frequency noise. In the current packaging process, the widely used packaging technology mainly includes chip scale packaging (Chip Scale Packaging).

Packaging ; CSP)以及覆晶式(Flip Chip ; FC)封裝雨種, 皆屬於技術層級較高的封裝方式。 經濟部智迖財產局員工消費合作社印製 其中,由於覆晶式封裝技術可提供相當多的輸入/輸 出,並可大幅縮減封裝的體積,達到輕薄短小的需求,更 具有極為優良之高頻雜訊控制能力等電性優點。因此,非 常適合作為高積集度且高頻的積體電路的封裝方式。由 於,覆晶式封裝技術的複雜性高,尚需要相關週邊技術的 配合,例如晶圓&塊製程以及高密度增層基板製作等,方 能使覆晶式封裝技術進一步發展。因此,高密度連線及增 層製程技術將是解決覆晶式封裝與晶片尺寸封裝等高階封 3 本紙張尺度適用中國國家標準(CNS)A4規格(210><297公釐) 531874 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明() 裝技術之瓶頸,以及可攜式電子產品對高1/0數需求的關 鍵。 在目前之覆晶封裝之增層基板製程中,形成於增層基 板之銲墊上的前銲錫球係用以與積體電路晶片上之銲錫球 接合,特別疋有利於與晶片上之高鉛(High_lead,例如 5Sn/95Pb)銲錫球或具微間隙(Fine pitch)之共熔銲錫球的 接合。此外,增層基板之前銲錫球更可增加增層基板與晶 片接合之間的平衡高度,而提升增層基板與晶片之接合可 靠度。請參照第1圖至第3圖,其係繪示習知增層基板之 前銲錫球的製程剖面圖。首先,提供有機的增層基板1〇(), 並於增層基板100上依佈局配置形成多個銲墊1〇2,藉以 與晶片或其他元件進行電性連接。再塗佈一層有機高分子 之乾膜層(Dry Film Layer) 104覆蓋增層基板1〇〇以及其上 之銲墊1 02,並利用例如顯影與曝光的方式在對應於銲墊 1 0 2位置之乾膜層1 〇 4中形成多個開口 1 〇 5,而形成如第1 圖所示之結構。 之後,運用鋼板(Stencil)印刷技術,利用刮刀1丨丨將 鋼板110上之銲錫膏(Solder Paste)113透過位置對應於開 口 105之孔洞112,使銲錫膏113掉入開口 1〇5中’而在 開口 1 0 5中分別形成銲錫膏1 〇 8 a、銲錫膏1 〇 8 b、以及銲錫 嘗10 8 c,如第2圖所示。然而,隨著元件尺寸的微小化趨 勢’杯墊1 0 2的尺寸也不斷地縮減’因而導致經由鋼板1 1 〇 之孔洞1 1 2掉落至開口 1 0 5之銲錫膏1 〇 8 a、銲錫膏1 〇 8 b、 以及銲錫膏l〇8c的數量多寡不一。由第2圖中,可清楚得 知銲錫膏108b之數量明顯少於銲錫膏i〇8a以及銲錫膏 4 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ...............^.........、玎.........^ (請先閱讀背面之注意事項再填寫本頁) 531874 A7 B7 五 缒濟部智^財產局員工消費合作社印製 '發明說明() i〇8c。 因此,請參照第3圖,在回銲(Refl〇w) -. 、以鄉進行後,所 形成之前銲錫球114a、前銲錫球U4b、以及 ...............芩— (請先閱讀背面之注意事項再填寫本頁) 的尺寸相當不一致。例如,前銲錫球丨丨4b的言’求U 4c 別銲錫球1 14a以及前銲錫球丨i 4c。因而f A員低於 11/1 文仔則銲錫5电 U4a、前銲錫球114b、以及前銲錫球114 场表 產生落差。 反此之間的高度 由於,藉由鋼板印刷技術所製成之前锃 I表风t刖知錫球的 不佳,會導致其製程可靠度下降,並造成其—又 AA 表私良率極大 、扣失。因此,大大地降低鋼板印刷技術在 埶〜 I有微間隙锃 塾*之增層基板上的應用性。 ’、、 發明目的及概述: #於上述習知在製作增層基板之前銲錫 球$ ,泉吩,前銲錫 八之均勻度不佳,而在前銲錫球之間造、 . 呵X落差’對製 可#度以及良率造成嚴重影響。 因此,本發明的主要目的之一就是在提 — I z、一種增層 攸之前銲錫球的製造方法,其係在先另— 曰土 線 利用^ 不、/占錫之載板上 J用電鍍技術製作出銲錫凸塊,再將此載把如 錫 置使各個銲 Μ ^塊分別與增層基板之銲墊上的開口對座# 回# 〜並接合。經過 W ^步驟後,銲錫凸塊便從載板上掉落並 儿勒附在銲墊上, 阳形成凝聚成前銲錫球。由於運用電鍍技術 W衣作而成之 轉凸塊具有相當高的均勻度,因此可有 户 欢改善製程可靠 & M及良率。 本發明之再一目的就是因為運用電鍍技 作# ^ ^術在載板上製 F ~錫凸塊時,對銲錫凸塊之尺寸與品質1女^ 貝具有絕佳的控制 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱) 531874 A7Packaging (CSP) and flip-chip (FC) packaging rain are both high-level packaging methods. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, because the flip-chip packaging technology can provide a considerable amount of input / output, and can greatly reduce the size of the package, to meet the requirements of light, thin and short, and has excellent high-frequency noise. Electrical control and other electrical advantages. Therefore, it is very suitable for packaging a high-integration and high-frequency integrated circuit. Due to the high complexity of flip-chip packaging technology, the cooperation of related peripheral technologies, such as wafer & block processes and high-density build-up substrates, is required to further develop flip-chip packaging technology. Therefore, high-density wiring and layer-adding process technology will solve high-level packaging such as flip-chip packaging and chip-size packaging. 3 This paper standard applies to China National Standard (CNS) A4 specification (210 > < 297 mm) 531874 Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative A7 B7 V. Description of the invention () The bottleneck of the installation technology, and the key to the high 1/0 number demand of portable electronic products. In the current manufacturing process of the flip-chip package for the build-up substrate, the front solder balls formed on the pads of the build-up substrate are used to bond with the solder balls on the integrated circuit wafer, which is particularly beneficial to the high lead on the wafer ( High_lead, such as 5Sn / 95Pb) solder balls or eutectic solder balls with a fine pitch. In addition, the solder balls before the build-up substrate can increase the balance height between the build-up substrate and the wafer, and improve the reliability of the build-up substrate and the wafer. Please refer to FIG. 1 to FIG. 3, which are cross-sectional views showing the process of solder balls before the conventional build-up substrate. First, an organic build-up substrate 10 () is provided, and a plurality of solder pads 102 are formed on the build-up substrate 100 in a layout configuration so as to be electrically connected to a chip or other components. Another layer of organic polymer dry film layer (Dry Film Layer) 104 is applied to cover the build-up substrate 100 and the pads 102 thereon, and the positions corresponding to the pads 102 are developed and exposed, for example. A plurality of openings 105 are formed in the dry film layer 104, and a structure as shown in FIG. 1 is formed. After that, using the steel plate (Stencil) printing technology, the solder paste 113 on the steel plate 110 passes through the hole 112 corresponding to the hole 112 of the opening 105 using the scraper 1 丨, and the solder paste 113 is dropped into the opening 105. Solder paste 108a, solder paste 108b, and solder paste 108c are formed in the opening 105, as shown in FIG. 2. However, with the trend toward miniaturization of component sizes, the size of the coaster 10 2 has been continuously reduced, which has resulted in solder paste 1 0 8 falling through the holes 1 1 2 of the steel plate 1 10 to the opening 105, The amount of solder paste 108b and solder paste 108c vary. From Figure 2, it is clear that the quantity of solder paste 108b is significantly less than solder paste i〇8a and solder paste 4. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ... ......... ^ ........., 玎 ......... ^ (Please read the notes on the back before filling out this page) 531874 A7 B7 Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives' Invention Description () i0c. Therefore, please refer to FIG. 3, after the reflow (Refl0w)-. Is performed, the former solder ball 114a, the former solder ball U4b, and ......... are formed. .. 芩 — (Please read the notes on the back before filling this page) The dimensions are quite inconsistent. For example, the words of the front solder ball 丨 4b 'find U 4c, do not solder the ball 141a and the front solder ball 丨 i 4c. Therefore, if the f A member is lower than 11/1, there will be a gap between the field surface of solder 5 and U4a, the front solder ball 114b, and the front solder ball 114. On the contrary, because of the poor quality of the solder balls before being made by the stencil printing technology, it will cause the reliability of the process to decline, and it will cause its high yield, Deducted. Therefore, the applicability of the stencil printing technology to a build-up substrate having a small gap of 埶 to I with 锃 塾 * is greatly reduced. '、, Object of the invention and summary: #Under the above-mentioned conventional methods, the solder balls $, quanfen, and front solder are not uniform evenly before the build-up substrate is made, and the X solder gap is made between the front solder balls. The system can seriously affect the degree and yield. Therefore, one of the main objects of the present invention is to manufacture a solder ball prior to the introduction of Iz, a layering method. The solder bumps are produced by technology, and then this load is placed such that each soldering block is respectively connected with the openings on the pads of the build-up substrate # 回 # ~ and joined. After the W ^ step, the solder bumps are dropped from the carrier board and attached to the pads, and the anodes are formed into a front solder ball. Because of the high uniformity of the turning bumps made using the electroplating technology W garment, users can improve the process reliability & yield. Another purpose of the present invention is because when using plating technique # ^ ^ to make F ~ tin bumps on the carrier board, the size and quality of the solder bumps are 1 female ^ shell has excellent control. This paper size is applicable to China Standard (CNS) A4 specification (210X297 public love) 531874 A7

五、發明説明() 月匕力。因此,對於相當細微間隙之銲墊佈局,具有極高的 可應用性。故,可解決目前因銲墊佈局之間隙日趨細微而 造成增層基板之前銲錫球設置不易的困難。 (請先閱讀背面之注意事項再填寫本頁) 根據以上所述之目的,本發明更提供了 一種增層基板 之前銲錫球的製造方法,至少包括··提供一增層基板,其 中此增層基板上至少包括一銲墊以及一乾膜層,而此乾膜 層覆蓋部分之銲墊,且在另一部分之銲墊上形成一開口; 提供一載板,其中此載板之材料為不沾錫材料,例如玻璃、 石英(Quartz)、以及鈦(Ti)等;形成一晶種層(seed Layer) 覆蓋在上述之載板上,其中此晶種層與銲錫之互溶性佳, 且此晶種層之材料為金(Au);形成一金屬層覆蓋在部分之 晶種層上,其中另一部分之晶種層之位置與增層基板之開 口的位置相對應’且此金屬層之材料為銅(Cu)或鈦;進行 一黑氧化(Black Oxide)步驟,藉以氧化上述之金屬層;形 成一銲錫凸塊於晶種層所暴露出之另一部分以及部分之金 屬層上;進行一倒置步驟,藉以使得載板上之銲錫凸塊斜 準並接合增層基板上之開口;以及進行一回銲步驟,藉以 使上述之銲錫凸塊脫離載板,並附著在增層基板之開D 中’而在開口中形成前鲜锡球。 圖式簡單說明: 經濟部智悉財產局眞工消費合作社印製 本發明的較佳實施例將於往後之說明文字中輔以下歹,j 圖形做更詳細的闡述,其中: 第1圖至第3圖為繪示習知增層基板之前銲錫球的製 程剖面圖;以及 第4圖至第9圖為繪示本發明之一較佳實施例之增層 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 531874 A7 B7 五、發明説明() 基板之前 銲 錫 球的製程剖面 圖。 圖號對照 說 明 : 100 增 層 基 板 102 銲 墊 104 乾 膜 層 105 開 口 108a 銲 錫 膏 108b 銲 錫 膏 108c 銲 锡 膏 110 鋼 板 111 刮 刀 1 12 孔 洞 1 13 銲 錫 膏 1 14a 前 銲 錫 球 1 14b 前 銲 錫 球 1 14c 前 銲 錫 球 200 載 板 202 晶 種 層 204 金 屬 層 206 開 口 208a 銲 錫 凸 塊 208b 銲 錫 凸 塊 208c 銲 錫 凸 塊 210 增 層 基 板 212 銲 墊 214 乾 膜 層 2 15 開 σ 2 16 助 銲 劑 218a 前 銲 錫 球 218b 前 銲 锡 球 218c 前 銲 錫 球 (請先閲讀背面之注意事項再填寫本頁) 發明詳細說明: 經濟部智迖財產局員工消費合作社印製 本發明揭露一種增層基板之前銲錫球的製造方法,其 係利用電鍍方式在不沾錫載板製作銲錫凸塊,再將載板倒 置覆蓋在增層基板上,藉以使銲錫凸塊轉移至增層基板之 銲墊上,而凝聚成前銲錫球。因此,運用本發明不僅可提 高前銲錫球之均句度,而改善製程良率,更可適用於具微 間隙之銲墊佈局。為了使本發明之敘述更加詳盡與完備, 可參照下列描述並配合第4圖至第9圖之圖示。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 531874 經濟部智慈財產局員工消費合作社印製 A7 B7 五、發明説明() 請參照第4圖至第9圖’其係繪示本發明之一較佳實 施例之增層基板之前銲錫球的製程剖面圖。首先,在平面 的載板2 0 0上利用例如;賤鍍(S p u 11 e r i n g)沉積的方式覆蓋一 層薄薄的晶種層2 0 2,以利後續之電鍍步驟的進行。其中, 載板2 0 0所採用之材料係不為錫所沾附之材料,例如玻 璃、石英、以及鈦等,且晶種層202之材料較佳是採用與 銲錫具有高互溶性的材料,例如金。再利用濺鍍沉積的方 式,或是藉由晶種層202而利用電鍍的方式’形成金屬層 204覆盍在晶種層202上’而形成如第4圖所示之結構。 其中,金屬層2 0 4之材料較佳為銅以及鈦等金屬。 接著’利用例如微影(P h 〇 t ο 1 i t h 〇 g r a p h y)以及|虫刻的方 式定義金屬層204,藉以去除部分之金屬層2〇4,並暴露出 部分之晶種層202,而在金屬層2〇4中形成多個開口 2〇6, 如第5圖所示。其中,這些開口 2 0 6之位置與增層基板 2 10(如第7圖所示)上之銲墊212的位置相對應。定義完金 屬層204之圖案後,進行一道黑氧化處理步驟來氧化金屬 層2 04,藉以使金屬層204對錫不具溼潤度並破壞其導電 性。於是’經過氧化的金屬層204不具有導電的能力,錫 也無法黏附於其上。 然後,請參照第6圖,以例如電鍍的方式,並利用晶 種層202,在所暴露出之晶種層202上形成銲錫凸塊208a、 銲錫凸塊208b、以及銲錫凸塊208c。其中,銲錫凸塊208a、 銲錫凸塊2 0 8 b、以及銲錫凸塊2 0 8 c不但填滿開口 2 0 6,也 會覆蓋到開口 2 0 6兩旁之金屬層2 0 4。然而,由於氧化過 之金屬層204不具有導電能力,因此銲錫不會在大部分之 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ...............^.........、可.........^ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531874 A7 _ B7 五、發明説明() 金屬層2 0 4上形成。此外,由於電鍍技術對銲錫成長的速 度以及品質具有絕佳的控制能力,因此銲錫凸塊2 〇 8 a、銲 錫凸塊2 0 8 b、以及銲錫凸塊2 0 8 c的尺寸與品質具有高度的 一致性。 此時,將載板200連同其上之堆疊結構翻轉並覆蓋在 增層基板210上’其中載板200上之銲錫凸塊208a、銲錫 凸塊20 8b、以及銲錫凸塊20 8c分別對準相對應之銲墊 2 1 2 ’而與銲墊2丨2上之開口 2丨5旁的乾膜層2丨4接觸。另 外’為了使銲錫能順利地銲接在銲墊2 12上,開口 2 1 5中 充填有助銲劑216,因此銲錫凸塊208a、銲錫凸塊2〇8b、 以及銲錫凸塊208c與乾膜層2 1 4接觸的同時,也會沾附到 開口 2 1 5中之助銲劑2 1 6,如第7圖所示之結構。 在載板200倒置並覆蓋在增層基板2丨〇上的同時,由 於銲錫與晶種層2〇2之互溶性高,因此銲錫凸塊、銲 錫凸塊2〇8b、以及銲錫凸塊2〇8c會將與其接觸之晶種層 2〇2迅速溶入,而導致銲錫凸塊2〇8a、銲錫凸塊2〇仏、以 及銲錫凸塊208c直接接觸到載板200。由於,載板2〇〇之 不沾錫特性,再加上錫也無法黏附在氧化後之金屬層2〇4 上因此銲錫凸塊208a、銲錫凸塊208b、以及銲錫凸塊2〇8c 會k載板2 0 0上脫離,而掉落在開口 2丨5上。此時藉由回 銲步驟的進行,並藉助助銲劑216的輔助,而使銲錫凸塊 2〇8a、銲錫凸塊208b、以及銲錫凸塊2〇8〇分別在銲墊η〕 上之開口 215中凝聚而成前銲錫球218a、前銲錫球2ι^、 以及前銲錫球218(:。其中,前銲錫球218心前銲錫球21讣、 以及前銲錫球21 8c不僅填滿其所在之開口 215,且更高於 9 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ 297公爱) "" - ...............^.........、耵.........^ (請先閱讀背面之注意事项再場寫本頁) B7 發明說明() 乾膜層214平面,如第8圖所示。 由於,銲錫凸塊2〇8a、銲錫凸塊2〇8b、以及銲錫凸塊 6〇8C已經完全脫離載板200,因此可將載板200移開,而 疋成了增層基板210之前銲錫球218a、前銲錫球21朴、以 及前銲锡球218c的設置,所形成之結構如第9圖所示。而 且,由於銲錫凸塊208a、銲錫凸塊2〇8b、以及銲錫凸塊2〇8c 之尺寸以及品質的均勻度相當優良,如此一來,所形成之 前銲錫球218a、前銲錫球218b、以及前銲錫球218c也具 有相當一致的尺寸與非常均勻的品質。 本發明之一優點就是因為藉由不沾錫之平面載板的輔 助,利用電鍍技術在此載板上製作出高均勻度的銲錫凸 塊,再將此載板倒置而使這些銲錫凸塊脫離載板並掉落至 增層基板之銲墊的開口上,經回銲步驟而凝聚成前銲錫 球。因此’提高前銲錫球之一致性,近而達到提升製程可 罪度以及良率的目的。 (請先閲讀背面之注意事項再場寫本頁) 經濟部智悉財產局員工消費合作社印製 板。間持 明範改 載質微決 發利效 助品細解 本專等 輔與於可 為請之 在寸對便 僅申成。 術尺,,。述之完内 技之局來置所明所圍 鍍塊佈一設上i下範 電凸墊此的以本神利 用錫銲如球,定精專 運銲的。錫的艮之請 為制般性銲解 Μ 示申 因控一用前瞭彡揭之 是效於應之所所述 就有用的隙員 $ 明下 點可應佳間人、亚發在 優,可 絕局之’本含 一 時僅有佈術已離包 另塊不也墊技]¾脫應 之凸明局銲此例未均 明錫發佈之悉施它, 發銲本墊化熟實其飾 本作,銲小如佳凡修 製此之微 較 ·,或 上 因隙續 之圍變 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)V. Description of the invention () Moon dagger force. Therefore, it has extremely high applicability for the pad layout with a relatively fine gap. Therefore, it is possible to solve the difficulty that the solder ball is not easy to be set before the substrate is increased due to the increasingly small gaps in the pad layout. (Please read the precautions on the back before filling this page) According to the above-mentioned purpose, the present invention further provides a method for manufacturing solder balls before a build-up substrate, which at least includes providing a build-up substrate, wherein the build-up substrate is provided. The substrate includes at least a solder pad and a dry film layer, and the dry film layer covers a part of the pads and forms an opening in the other part of the pads; a carrier board is provided, wherein the carrier board is made of a non-stick material , Such as glass, quartz (Quartz), and titanium (Ti), etc .; forming a seed layer covering the above-mentioned carrier board, wherein the seed layer and the solder have good mutual solubility, and the seed layer The material is gold (Au); a metal layer is formed to cover part of the seed layer, where the position of the seed layer of the other part corresponds to the position of the opening of the build-up substrate ', and the material of the metal layer is copper ( Cu) or titanium; performing a Black Oxide step to oxidize the above metal layer; forming a solder bump on another part and part of the metal layer exposed by the seed layer; and performing an inversion step, thereby Make The solder bumps on the carrier board are aligned with the openings on the build-up substrate; and a re-soldering step is performed so that the solder bumps mentioned above are detached from the carrier board and attached to the opening D of the build-up substrate to open The former formed fresh tin balls. Brief description of the drawings: The preferred embodiment of the present invention printed by the Ministry of Economic Affairs ’Intellectual Property Bureau, Machining and Consumer Cooperatives will be supplemented by the following 歹, j graphics in the following explanatory text, in which: Figure 1 to Figure 3 is a cross-sectional view showing the process of solder balls before a conventional build-up substrate; and Figures 4 to 9 are drawings showing a build-up of a preferred embodiment of the present invention. The paper size is applicable to Chinese National Standard (CNS) A4 Specifications (210X297 mm) 531874 A7 B7 V. Description of the invention () Process cross-section view of the solder ball before the substrate. Comparative description of drawing numbers: 100 build-up substrate 102 solder pad 104 dry film layer 105 opening 108a solder paste 108b solder paste 108c solder paste 110 steel plate 111 scraper 1 12 hole 1 13 solder paste 1 14a front solder ball 1 14b front solder ball 1 14c front solder ball 200 carrier board 202 seed layer 204 metal layer 206 opening 208a solder bump 208b solder bump 208c solder bump 210 build-up substrate 212 pad 214 dry film layer 2 15 open σ 2 16 flux 218a front solder Ball 218b Front solder ball 218c Front solder ball (Please read the precautions on the back before filling out this page) Detailed description of the invention: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This invention discloses the manufacture of a solder ball before a build-up substrate The method is to use a plating method to prepare solder bumps on a non-stick solder carrier board, and then cover the carrier board upside down, so that the solder bumps are transferred to the solder pads of the build-up substrate, and aggregated into front solder balls. . Therefore, the application of the present invention can not only improve the uniformity of the front solder balls, but also improve the process yield, and it can also be applied to the pad layout with micro gaps. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions and the diagrams in FIGS. 4 to 9. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 531874 Printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Please refer to Figures 4 to 9 It is a cross-sectional view showing a process of forming solder balls before a build-up substrate according to a preferred embodiment of the present invention. First, a thin seed layer 202 is covered on the flat substrate 200 by means of, for example, base plating (S p u 11 e r i n g) deposition, so as to facilitate the subsequent electroplating step. Among them, the material used for the carrier board 200 is a material that is not attached to tin, such as glass, quartz, and titanium, and the material of the seed layer 202 is preferably a material having high mutual solubility with solder. For example, gold. Then, a sputtering deposition method is used, or the seed layer 202 is used to form a metal layer 204 overlying the seed layer 202 by electroplating to form the structure shown in FIG. 4. Among them, the material of the metal layer 204 is preferably a metal such as copper and titanium. Then 'define the metal layer 204 by using, for example, lithography (Ph 〇t ο 1 ith 〇graphy) and | insect engraving, thereby removing a part of the metal layer 204, and exposing a part of the seed layer 202, and A plurality of openings 20 are formed in the metal layer 204, as shown in FIG. The positions of these openings 206 correspond to the positions of the pads 212 on the build-up substrate 2 10 (as shown in FIG. 7). After the pattern of the metal layer 204 is defined, a black oxidation treatment step is performed to oxidize the metal layer 204 so that the metal layer 204 does not have a wettability to tin and destroys its conductivity. Therefore, the oxidized metal layer 204 has no ability to conduct electricity, and tin cannot adhere to it. Then, referring to FIG. 6, a solder bump 208a, a solder bump 208b, and a solder bump 208c are formed on the exposed seed layer 202 by using the seed layer 202, for example, by electroplating. Among them, the solder bump 208a, the solder bump 2 0 8 b, and the solder bump 2 8 c not only fill the opening 2 6 but also cover the metal layer 2 4 on both sides of the opening 2 6. However, because the oxidized metal layer 204 does not have electrical conductivity, solder will not apply the Chinese National Standard (CNS) A4 specification (210X297 mm) in most of the paper sizes ........... .... ^ ........., but ......... ^ (Please read the notes on the back before filling out this page) Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 531874 A7 _ B7 V. Description of the invention () The metal layer 2 is formed on the substrate. In addition, because the electroplating technology has excellent control over the speed and quality of solder growth, the size and quality of solder bumps 2 0a, 2 0 8 b, and 2 0 8 c are highly Consistency. At this time, the carrier board 200 with the stacked structure thereon is turned over and covered on the build-up substrate 210. Among them, the solder bumps 208a, the solder bumps 20 8b, and the solder bumps 20 8c on the carrier board 200 are aligned with each other. Corresponding to the pad 2 1 2 ′, it is in contact with the dry film layer 2 丨 4 next to the opening 2 丨 5 on the pad 2 丨 2. In addition, in order to allow the solder to be soldered to the pad 2 12 smoothly, the opening 2 1 5 is filled with the flux 216, so the solder bump 208a, the solder bump 208b, the solder bump 208c, and the dry film layer 2 At the same time as 1 4 is in contact, the flux 2 1 6 in the opening 2 1 5 is also adhered, as shown in the structure of FIG. 7. While the carrier board 200 is inverted and covered on the build-up substrate 20, the solder and the seed layer 200 have high mutual solubility, so the solder bump, the solder bump 208b, and the solder bump 2 8c will rapidly dissolve the seed layer 002 in contact with it, resulting in solder bump 208a, solder bump 202, and solder bump 208c directly contacting the carrier board 200. Due to the non-stick property of the substrate 200, and the tin cannot adhere to the oxidized metal layer 204, the solder bump 208a, the solder bump 208b, and the solder bump 208c will k The carrier board 2 is disengaged from the carrier board 2 and falls on the opening 2 5. At this time, the solder bump 208a, the solder bump 208b, and the solder bump 208 are opened on the pad η] by the reflow step and assisted by the flux 216, respectively. The front solder ball 218a, the front solder ball 2m ^, and the front solder ball 218 (:. Among them, the front solder ball 218 includes the front solder ball 21 讣, and the front solder ball 21 8c not only fills the opening 215 where it is located. , And higher than 9 This paper size is applicable to China National Standard (CNS) A4 specification (21〇χ 297 公 爱) " "-............... ^ ... ......, 耵 ............ ^ (Please read the notes on the back before writing this page) B7 Description of the invention () The dry film layer 214 plane, as shown in Figure 8. Since the solder bump 208a, solder bump 208b, and solder bump 608C have completely separated from the carrier board 200, the carrier board 200 can be removed, and the solder ball before the build-up substrate 210 is formed. The arrangement of 218a, front solder ball 21, and front solder ball 218c is as shown in Fig. 9. Furthermore, the solder bumps 208a, solder bumps 208b, and solder bumps 208c are formed. Size and The uniformity of the quality is quite good. In this way, the formed solder balls 218a, front solder balls 218b, and front solder balls 218c also have fairly consistent dimensions and very uniform quality. One advantage of the present invention is that because With the aid of a tin-covered flat carrier board, a highly uniform solder bump is produced on this carrier board by using electroplating technology, and then the carrier board is inverted so that these solder bumps are detached from the carrier board and dropped onto the build-up substrate. The solder pad openings are aggregated into front solder balls after the reflow step. Therefore, 'improving the consistency of the front solder balls has recently achieved the goal of improving the guilt and yield of the process. (Please read the precautions on the back before reading Write this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Occasionally, it will be modified, and the micro-decisions will be issued. The ruler ,, and the end of the internal skill are set to place the plating block surrounded by a set of upper and lower fan electric pads. This is based on the essence of the use of soldering like a ball, will be precision transport welding. Please explain the reasons for tin soldering. As soon as it is used, it will be useful for the layman who is effective as described. The next point is that Yingjiaren and Yafa are excellent, but there is no way out of this. Only the cloth technique has been out of the package. Another piece is not a pad technique. ¾ The off-response of the bright spot welding is not as clear as the release of Ming tin. Welding pads are used to perfect the decorative work. Welding is as small as Jiafan. · Or, the paper size is subject to the Chinese National Standard (CNS) A4 (210X297 mm)

Claims (1)

531874 A B CD 經 濟 部 智 慧 財 產 局 消 費 合 社 印 製 、申請專利範圍 1. 一種增層基板(Buildup Substrate)之前輝錫球(ρ^ solder Bump)的製造方法,其中該增層基板上至少包括—鲜 塾以及一乾膜層(Dry Film Layer)覆蓋部分之該銲塾,且今 乾膜層在另一部分之該銲塾上形成一開口,而該增層臭板 之前銲錫球的製造方法至少包括: 提供一載板(Carrier),其中該載板上至少已覆蓋有一曰 ° 曰曰 種層(Seed Layer); 形成一金屬層覆蓋在部分之該晶種層上,而另一部分 之該晶種層之一位置與該增層基板之該開口之一位置相對 應, 形成一銲錫凸塊於該晶種層之該另一部分以及部分之 該金屬層上; 進行一倒置步驟,藉以使得該載板上之該銲錫凸塊與 該增層基板上之該開口對準並接合;以及 、 進行一回銲(Reflow)步驟,藉以使哕俨4 笟落1干錫凸塊脫離該載 板並附著在該增層基板之該開口的該録執 i上’而在該開口 中形成該前銲錫球。 2·如申請專利範圍第1項所述之 ㈢層基板之前銲錫球 的製造方法’其中該增層基板之材料為一 有機材料。 3.如申請專利範圍第1項所述 ^ 9層基板之前銲錫球 的製造方法,其中該載板之材料為一 +沾錫材料。 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公复) ...............^.........、可.........線 (請先閲讀背面之注意事項再填寫本頁) 531874 A8 B8 C8 D8 申請專利範圍 球 錫 銲 前 之 板 基 層。 增璃 之玻 述為 所料 項材 1 之 第板 圍載 範該 利中 專其 請’ 申法 如方 4 造 製 的 球 錫 銲 前 之)° 板rtz 基uar 層 Q 增W 之石 述為 所料 項材 1 之 第板 圍載 範該 利中 專其 請 , 申法 如方 5 造 製 的 球 錫 銲 前 之 板 基 層)° 增T1 之鈦 述為 所料 項材 1之 第板 圍載 範該 利中 專其 請 , 申法 如方 6 造 製 的 球具 錫料 銲材 前之 之塊 板凸 基錫 層銲 增該 之與 述料 所材 項之 1 層 第種 圍 晶 範該 利中 專其 請 ,。 申法性 如方溶 7 造互 製高 的有 球 錫 銲 前 之 板。 基U) 層 A 增W 之為 述料 所材 項之 1 層 圍 aBB 範該 利中 專其 請 , 申法 如方 8 造 製 的 球 錫 銲 前 之 板。 基U) 層 C 增i 之為 述料 所材 項之 1 層 第屬 圍金 範該 利中 專其 請 , 申法 如方 9 造 製 的 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 第 圍 範 利 專 請 申 如 屬 金 該 中 其 法 方 造 製 的 球 錫 銲 前 之 板。 基)° • 1 層 T 增ί 之為 述料 所材 項之 1 層 第 圍 範 利 專 請 申 如 該 成 形 中 其 法 方 造 製 的 球 錫鍍 曰干^¾ 前 一 之用 板利 基係 層驟 增步 之之 述塊 所凸 項錫 1銲 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 531874 A8 B8 C8 _D8 六、申請專利範圍 法。 (請先閲讀背面之注意事項再填寫本頁) 1 2.如申請專利範圍第1項所述之增層基板之前銲錫 球的製造方法,其中進行該倒置步驟前,更至少包括提供 一助銲劑於該開口中。 1 3 .如申請專利範圍第1項所述之增層基板之前銲錫 球的製造方法,其中進行該倒置步驟前,更至少包括進行 一黑氧化(B lack Oxide)步驟,藉以氧化該金屬層。 1 4.如申請專利範圍第1項所述之增層基板之前銲錫 球的製造方法,其中使該銲錫凸塊脫離該載板之步驟中, 更至少包括使該銲錫凸塊溶化該晶種層之該另一部分,而 使該銲錫凸塊與該載板接觸。 1 5. —種增層基板之前銲錫球的製造方法,其中該增層 基板上至少包括一銲墊以及一乾膜層覆蓋部分之該銲墊, 而該乾膜層在另一部分之該銲墊上形成一開口,且該增層 基板之前銲錫球的製造方法至少包括: 提供一載板,且該載板上至少包括依序堆疊之一晶種 經濟部智慧財產局員工消費合作社印製 層另 屬出 金露 一 暴 及並 以 , 層 上 在 蓋 覆 層 金 該 中 其 層 am」 種 晶 該 之 分 β— 立口 晶 該 且 層 一 種另 晶該 該之 之層 分種 βτ 立口 之 ; 層 應種 對晶 相該 置於 位塊 一 凸 之锡 口 鲜; 開一上 該成層 之形屬 板以金 基藉該 層,之 增驟分 該步部 與鍍及 置電以 位 一分 一 行部 之進一 分 另 部 該 3 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 531874 A8 B8 C8 D8 申請專利範圍 進行一倒置步驟,藉以使得該載板上之該銲錫凸塊與 該增層基板上之該開口對準並接合;以及 (請先閱讀背面之注意事項再填寫本頁) 進行一回銲步驟,藉以使該銲錫凸塊脫離該載板並附 著在該增層基板之該開口的該銲墊上,而在該開口中形成 該前録錫球。 1 6.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該增層基板之材料為一有機材料。 1 7.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該載板之材料為一不沾錫材料。 1 8.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該載板之材料為玻璃。 1 9.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法’其中該載板之材料為石英。 2 0.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該載板之材料為鈦。 經濟部智慧財產局員工消費合作社印製 2 1 .如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該晶種層係利用一濺鍍(Sputtering)沉 積方式所形成。 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 531874 A B CD 々、申請專利範圍 22.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該晶種層之材料與該銲錫ώ塊之材料 具有高互溶性。 (請先閱讀背面之注意事項再填寫本頁) 2 3 .如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該晶種層之材料為金。 24.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該金屬層係利用一濺鍍沉積方式所形 成。 2 5 .如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該金屬層係利用一電艘方式所形成。 2 6.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該金屬層之材料為銅。 2 7.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中該金屬層之材料為鈦。 經濟部智慧財產局員工消費合作社印製 2 8.如申請專利範圍第1 5項所述之增層基板之前銲錫 球的製造方法,其中進行該倒置步驟前,更至少包括進行 一黑氧化步驟,藉以氧化該金屬層。 29.如申請專利範圍第1 5項所述之增層基板之前銲錫 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 531874 8 8 8 8 A B CD 六、申請專利範圍球的製造方法’其中進行該倒置步驟前’更至少包括提供 一助銲劑於該開口中。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)531874 AB CD Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperative, patent application scope 1. A manufacturing method of ρ ^ solder bump before buildup substrate, where the buildup substrate includes at least- Fresh solder and a dry film layer (Dry Film Layer) cover part of the solder pad, and now the dry film layer forms an opening on the solder pad in another part, and the manufacturing method of the solder ball before the layered odor plate at least includes: A carrier is provided, wherein the carrier has been covered with at least a seed layer; a metal layer is formed to cover a part of the seed layer, and another part of the seed layer A position corresponding to a position of the opening of the build-up substrate, forming a solder bump on the other part of the seed layer and a part of the metal layer; performing an inversion step so that the carrier board The solder bump is aligned with the opening on the build-up substrate and bonded; and, a reflow step is performed, so that 哕 俨 4 and 1 dry solder bump are released from the load. And attached to the opening of the record execution i build-up substrate of the 'front of the solder balls is formed in the opening. 2. The manufacturing method of the solder ball before the substrate is described in item 1 of the scope of the patent application, wherein the material of the build-up substrate is an organic material. 3. The manufacturing method of the solder ball before the 9-layer substrate as described in item 1 of the scope of the patent application, wherein the material of the carrier board is a + solder material. This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 public reply) ............... ^ ........., possible ... .... line (please read the precautions on the back before filling out this page) 531874 A8 B8 C8 D8 Patent application Board base before ball soldering. The description of Zengli is the first sheet of the material item 1 contained in Fanglili's secondary school, and it's required to apply the method (such as before the ball soldering made by Fang 4) °° Rtz base uar layer Q increase W stone The first board of the expected item 1 contains Fan Qili's technical expertise, and the application method is the base layer of the ball before soldering made by Fang 5) ° The titanium increased by T1 is described as the first plate of the expected item 1. Surrounded by Fanglili, please apply for it, apply the method such as square 6 before the soldering material of the plate, the convex base tin layer is welded to increase the 1st layer of the surrounding crystal with the material described. Fan Kelly secondary school please. Declarability is as Fang Rong 7 makes mutual high plate with ball solder before welding. Base U) Layers A and W are the materials described in the materials. The first layer is aBB, which should be in the interest of the middle school. Please apply for the method, such as the ball solder plate made by Fang 8 before welding. Base U) The first layer of layer C and i is the material of the material. The first layer belongs to the gold fan, the second is the technical secondary school, and the application method is made by party 9 (please read the precautions on the back before filling this page) The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed Fan Wei to apply for a ball-soldering board made by the French party. Base) ° • 1 layer of T is added as the material of the material in the first layer. Fan Li specially applies for the ball tin plating made by the French method in the forming process. ^ ¾ The former plate niche The bulge of the stepped block of the description of the layer is tin 1 solder. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 531874 A8 B8 C8 _D8 VI. Patent Application Scope Law. (Please read the precautions on the back before filling this page) 1 2. The manufacturing method of the solder ball before the build-up substrate described in item 1 of the scope of patent application, wherein before performing the inversion step, at least including providing a flux to The opening. 1 3. The method for manufacturing a solder ball before adding a substrate as described in item 1 of the scope of the patent application, wherein before performing the inversion step, it further includes at least a B lack Oxide step to oxidize the metal layer. 1 4. The method for manufacturing a solder ball before increasing the substrate according to item 1 of the scope of the patent application, wherein the step of removing the solder bump from the carrier board further includes at least dissolving the solder bump into the seed layer The other part, so that the solder bump is in contact with the carrier board. 1 5. A method for manufacturing a solder ball before a build-up substrate, wherein the build-up substrate includes at least a pad and a pad covered by a dry film layer, and the dry film layer is formed on the pad of another part An opening, and the method for manufacturing a solder ball before the build-up substrate includes at least: providing a carrier board, and the carrier board includes at least one seed layer stacked in order. A layer of gold dew bursts, and the layers are covered with a layer of gold. The seed crystals should be divided into β — and the crystals should be layered and another layer should be crystallized and separated into βτ. The crystalline phase should be placed on a convex tin mouth of the block; open the layered metal plate to borrow the layer from the gold base, the step is divided into a step and the plating and the electricity are placed in a row. The 3 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 531874 A8 B8 C8 D8. The scope of patent application is an inversion step, so that the solder bumps on the carrier board are raised. Align and bond with the opening on the build-up substrate; and (please read the precautions on the back before filling this page) to perform a re-soldering step so that the solder bumps are separated from the carrier board and attached to the build-up The pre-recorded solder ball is formed on the pad of the opening in the substrate. 16. The method for manufacturing a solder ball before the build-up substrate according to item 15 of the scope of the patent application, wherein the material of the build-up substrate is an organic material. 1 7. The method for manufacturing a solder ball before increasing the substrate according to item 15 of the scope of the patent application, wherein the material of the carrier board is a non-stick material. 1 8. The method for manufacturing a solder ball before adding a substrate as described in item 15 of the scope of patent application, wherein the material of the carrier plate is glass. 19. The method for manufacturing a solder ball before adding a substrate as described in item 15 of the scope of patent application, wherein the material of the carrier plate is quartz. 20. The method for manufacturing a solder ball before increasing the substrate according to item 15 of the scope of patent application, wherein the material of the carrier plate is titanium. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 form. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 531874 AB CD 々, patent application scope 22. The method for manufacturing solder balls before the build-up substrate described in item 15 of the patent application scope, where The material of the seed layer and the material of the solder block have high mutual solubility. (Please read the precautions on the back before filling out this page) 2 3. The method for manufacturing the solder ball before adding the substrate as described in item 15 of the patent application scope, in which the material of the seed layer is gold. 24. The method for manufacturing a solder ball before increasing the substrate according to item 15 of the scope of patent application, wherein the metal layer is formed by a sputtering deposition method. 25. The method for manufacturing a solder ball before increasing the substrate according to item 15 of the scope of patent application, wherein the metal layer is formed by an electric boat method. 2 6. The method for manufacturing a solder ball before adding a substrate according to item 15 of the scope of patent application, wherein the material of the metal layer is copper. 2 7. The method for manufacturing a solder ball before increasing the substrate according to item 15 of the scope of the patent application, wherein the material of the metal layer is titanium. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 8. The manufacturing method of the solder ball before the build-up substrate described in item 15 of the scope of patent application, wherein before performing the inversion step, it further includes at least a black oxidation step, Thereby, the metal layer is oxidized. 29. Solder before the build-up substrate as described in item 15 of the scope of patent application. The paper size is applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm) 531874 8 8 8 8 AB CD 6. The manufacturing method 'wherein before performing the inversion step' further includes at least providing a flux in the opening. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) A4 (210X297 mm)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387018B (en) * 2005-01-10 2013-02-21 Micron Technology Inc Interconnect structures with bond-pads and methods of forming bump sites on bond-pads

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387018B (en) * 2005-01-10 2013-02-21 Micron Technology Inc Interconnect structures with bond-pads and methods of forming bump sites on bond-pads

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