JP5321873B2 - 接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法 - Google Patents

接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法 Download PDF

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JP5321873B2
JP5321873B2 JP2007550572A JP2007550572A JP5321873B2 JP 5321873 B2 JP5321873 B2 JP 5321873B2 JP 2007550572 A JP2007550572 A JP 2007550572A JP 2007550572 A JP2007550572 A JP 2007550572A JP 5321873 B2 JP5321873 B2 JP 5321873B2
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layer
dielectric
cap
dielectric layer
bond pad
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JP2008527727A5 (enExample
JP2008527727A (ja
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タン，サン，ディー．
タトル，マーク，イー．
クック，キース，アール．
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マイクロン テクノロジー， インク．
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0496—6th Group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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US20090179330A1 (en) 2009-07-16
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US20060151880A1 (en) 2006-07-13
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US20080032494A1 (en) 2008-02-07
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