JP3735547B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP3735547B2
JP3735547B2 JP2001259310A JP2001259310A JP3735547B2 JP 3735547 B2 JP3735547 B2 JP 3735547B2 JP 2001259310 A JP2001259310 A JP 2001259310A JP 2001259310 A JP2001259310 A JP 2001259310A JP 3735547 B2 JP3735547 B2 JP 3735547B2
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JP
Japan
Prior art keywords
film
bump electrode
electrode
insulating film
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001259310A
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English (en)
Japanese (ja)
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JP2003068779A5 (enExample
JP2003068779A (ja
Inventor
美恵 松尾
雅弘 宮田
弘和 江澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001259310A priority Critical patent/JP3735547B2/ja
Priority to US10/228,081 priority patent/US6734568B2/en
Priority to TW091119676A priority patent/TWI264756B/zh
Priority to KR10-2002-0051369A priority patent/KR100488126B1/ko
Priority to CNB021602913A priority patent/CN1210792C/zh
Priority to CNA2004100115800A priority patent/CN1627480A/zh
Publication of JP2003068779A publication Critical patent/JP2003068779A/ja
Publication of JP2003068779A5 publication Critical patent/JP2003068779A5/ja
Application granted granted Critical
Publication of JP3735547B2 publication Critical patent/JP3735547B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001259310A 2001-08-29 2001-08-29 半導体装置及びその製造方法 Expired - Fee Related JP3735547B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001259310A JP3735547B2 (ja) 2001-08-29 2001-08-29 半導体装置及びその製造方法
US10/228,081 US6734568B2 (en) 2001-08-29 2002-08-27 Semiconductor device and method of manufacturing the same
KR10-2002-0051369A KR100488126B1 (ko) 2001-08-29 2002-08-29 반도체 장치 및 그 제조 방법
CNB021602913A CN1210792C (zh) 2001-08-29 2002-08-29 半导体器件及其制造方法
TW091119676A TWI264756B (en) 2001-08-29 2002-08-29 Semiconductor device
CNA2004100115800A CN1627480A (zh) 2001-08-29 2002-08-29 半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001259310A JP3735547B2 (ja) 2001-08-29 2001-08-29 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2003068779A JP2003068779A (ja) 2003-03-07
JP2003068779A5 JP2003068779A5 (enExample) 2005-07-07
JP3735547B2 true JP3735547B2 (ja) 2006-01-18

Family

ID=19086701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001259310A Expired - Fee Related JP3735547B2 (ja) 2001-08-29 2001-08-29 半導体装置及びその製造方法

Country Status (1)

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JP (1) JP3735547B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4247017B2 (ja) * 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4220808B2 (ja) * 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
KR101029178B1 (ko) * 2003-03-10 2011-04-12 하마마츠 포토닉스 가부시키가이샤 포토다이오드 어레이 및 그 제조방법 그리고 방사선 검출기
JP4713849B2 (ja) * 2004-05-31 2011-06-29 株式会社日立ハイテクノロジーズ 多層配線基板の製造方法
KR100639703B1 (ko) 2005-08-09 2006-10-30 삼성전자주식회사 금속기저층의 언더컷 보상 방법 및 그를 이용한 웨이퍼레벨 칩 스케일 패키지 제조 방법
US7579258B2 (en) * 2006-01-25 2009-08-25 Freescale Semiconductor, Inc. Semiconductor interconnect having adjacent reservoir for bonding and method for formation
JP4808748B2 (ja) * 2008-06-13 2011-11-02 浜松ホトニクス株式会社 ホトダイオードアレイの製造方法
JP4808759B2 (ja) * 2008-11-18 2011-11-02 浜松ホトニクス株式会社 放射線検出器
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
US8441133B2 (en) * 2009-03-31 2013-05-14 Ibiden Co., Ltd. Semiconductor device
JP2012174988A (ja) * 2011-02-23 2012-09-10 Sony Corp 接合電極、接合電極の製造方法、半導体装置、及び、半導体装置の製造方法
JP6210777B2 (ja) * 2013-07-26 2017-10-11 新光電気工業株式会社 バンプ構造、配線基板及び半導体装置並びにバンプ構造の製造方法
JP6591240B2 (ja) * 2015-09-11 2019-10-16 株式会社東芝 デバイスの製造方法
KR101803516B1 (ko) * 2016-03-04 2017-11-30 주식회사 에스에프에이반도체 반도체 칩 구조물, 반도체 패키지 및 이의 제조 방법

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JP2003068779A (ja) 2003-03-07

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