JP2004022642A5 - - Google Patents

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Publication number
JP2004022642A5
JP2004022642A5 JP2002172629A JP2002172629A JP2004022642A5 JP 2004022642 A5 JP2004022642 A5 JP 2004022642A5 JP 2002172629 A JP2002172629 A JP 2002172629A JP 2002172629 A JP2002172629 A JP 2002172629A JP 2004022642 A5 JP2004022642 A5 JP 2004022642A5
Authority
JP
Japan
Prior art keywords
semiconductor
metal
film
groove
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002172629A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004022642A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002172629A priority Critical patent/JP2004022642A/ja
Priority claimed from JP2002172629A external-priority patent/JP2004022642A/ja
Priority to US10/458,489 priority patent/US6956259B2/en
Publication of JP2004022642A publication Critical patent/JP2004022642A/ja
Publication of JP2004022642A5 publication Critical patent/JP2004022642A5/ja
Priority to US11/213,957 priority patent/US7285461B2/en
Pending legal-status Critical Current

Links

JP2002172629A 2002-06-13 2002-06-13 半導体装置およびその製造方法 Pending JP2004022642A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002172629A JP2004022642A (ja) 2002-06-13 2002-06-13 半導体装置およびその製造方法
US10/458,489 US6956259B2 (en) 2002-06-13 2003-06-11 Semiconductor device and method of manufacturing the same
US11/213,957 US7285461B2 (en) 2002-06-13 2005-08-30 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002172629A JP2004022642A (ja) 2002-06-13 2002-06-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004022642A JP2004022642A (ja) 2004-01-22
JP2004022642A5 true JP2004022642A5 (enExample) 2005-03-17

Family

ID=31172138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002172629A Pending JP2004022642A (ja) 2002-06-13 2002-06-13 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US6956259B2 (enExample)
JP (1) JP2004022642A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022642A (ja) * 2002-06-13 2004-01-22 Toshiba Corp 半導体装置およびその製造方法
JP2005005580A (ja) * 2003-06-13 2005-01-06 Renesas Technology Corp 半導体装置
US7230312B2 (en) * 2003-12-31 2007-06-12 Micron Technology, Inc. Transistor having vertical junction edge and method of manufacturing the same
DE102004040046B4 (de) * 2004-08-18 2008-04-30 Qimonda Ag Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle, und entsprechender Grabenkondensator
KR100790296B1 (ko) * 2006-12-04 2008-01-02 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법
US20230023235A1 (en) * 2021-07-26 2023-01-26 Applied Materials, Inc. Enhanced stress tuning and interfacial adhesion for tungsten (w) gap fill

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449654A (ja) 1990-06-19 1992-02-19 Nec Corp 半導体メモリ
KR0179677B1 (ko) 1993-12-28 1999-04-15 사토 후미오 반도체장치 및 그 제조방법
US6090701A (en) * 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
JP3655013B2 (ja) 1995-08-25 2005-06-02 株式会社東芝 半導体装置の製造方法
US5907188A (en) 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US5905279A (en) 1996-04-09 1999-05-18 Kabushiki Kaisha Toshiba Low resistant trench fill for a semiconductor device
JP4021593B2 (ja) 1998-09-25 2007-12-12 株式会社東芝 半導体装置およびその製造方法
US6319764B1 (en) * 1999-08-25 2001-11-20 Micron Technology, Inc. Method of forming haze-free BST films
JP4761599B2 (ja) 1999-12-03 2011-08-31 株式会社東芝 半導体装置
JP2001189448A (ja) 1999-12-28 2001-07-10 Fujitsu Ltd 半導体装置及びその製造方法
JP4571278B2 (ja) 2000-07-14 2010-10-27 東京エレクトロン株式会社 半導体装置の製造方法
US6638877B2 (en) * 2000-11-03 2003-10-28 Texas Instruments Incorporated Ultra-thin SiO2using N2O as the oxidant
US6730616B2 (en) * 2001-09-24 2004-05-04 Texas Instruments Incorporated Versatile plasma processing system for producing oxidation resistant barriers
JP2004022642A (ja) * 2002-06-13 2004-01-22 Toshiba Corp 半導体装置およびその製造方法

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