JP2002134715A5 - - Google Patents

Download PDF

Info

Publication number
JP2002134715A5
JP2002134715A5 JP2000322117A JP2000322117A JP2002134715A5 JP 2002134715 A5 JP2002134715 A5 JP 2002134715A5 JP 2000322117 A JP2000322117 A JP 2000322117A JP 2000322117 A JP2000322117 A JP 2000322117A JP 2002134715 A5 JP2002134715 A5 JP 2002134715A5
Authority
JP
Japan
Prior art keywords
film
forming
integrated circuit
circuit device
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000322117A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002134715A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000322117A priority Critical patent/JP2002134715A/ja
Priority claimed from JP2000322117A external-priority patent/JP2002134715A/ja
Priority to TW090121304A priority patent/TW578297B/zh
Priority to US09/943,516 priority patent/US6423593B1/en
Priority to KR1020010053697A priority patent/KR20020031283A/ko
Publication of JP2002134715A publication Critical patent/JP2002134715A/ja
Priority to US10/173,159 priority patent/US6544835B2/en
Publication of JP2002134715A5 publication Critical patent/JP2002134715A5/ja
Pending legal-status Critical Current

Links

JP2000322117A 2000-10-23 2000-10-23 半導体集積回路装置およびその製造方法 Pending JP2002134715A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000322117A JP2002134715A (ja) 2000-10-23 2000-10-23 半導体集積回路装置およびその製造方法
TW090121304A TW578297B (en) 2000-10-23 2001-08-29 Semiconductor integrated circuit device and the manufacturing method thereof
US09/943,516 US6423593B1 (en) 2000-10-23 2001-08-31 Semiconductor integrated circuit device and process for manufacturing the same
KR1020010053697A KR20020031283A (ko) 2000-10-23 2001-09-01 반도체집적회로장치 및 그 제조방법
US10/173,159 US6544835B2 (en) 2000-10-23 2002-06-18 Method of forming a ruthenium film by CVD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000322117A JP2002134715A (ja) 2000-10-23 2000-10-23 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002134715A JP2002134715A (ja) 2002-05-10
JP2002134715A5 true JP2002134715A5 (enExample) 2005-02-03

Family

ID=18800044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000322117A Pending JP2002134715A (ja) 2000-10-23 2000-10-23 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (2) US6423593B1 (enExample)
JP (1) JP2002134715A (enExample)
KR (1) KR20020031283A (enExample)
TW (1) TW578297B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797323B1 (en) * 1996-11-29 2004-09-28 Sony Corporation Method of forming silicon oxide layer
EP1102329A3 (en) 1999-11-17 2003-09-24 Sanyo Electric Co., Ltd. Dielectric element
JP2001217403A (ja) * 2000-02-04 2001-08-10 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002134715A (ja) * 2000-10-23 2002-05-10 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002151657A (ja) 2000-11-08 2002-05-24 Sanyo Electric Co Ltd 誘電体素子およびその製造方法
KR100429876B1 (ko) * 2001-07-27 2004-05-04 삼성전자주식회사 고밀도 씨딩층을 갖는 루테늄막을 구비하는 반도체 소자의제조 방법 및 그러한 반도체 소자를 형성하기 위한 제조장비
KR100413828B1 (ko) * 2001-12-13 2004-01-03 삼성전자주식회사 반도체 장치 및 그 형성방법
US6942318B2 (en) * 2002-05-31 2005-09-13 Hewlett-Packard Development Company, L.P. Chamber having a protective layer
JP2004014714A (ja) * 2002-06-05 2004-01-15 Mitsubishi Electric Corp キャパシタの製造方法
KR100465631B1 (ko) * 2002-12-11 2005-01-13 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
JP4628862B2 (ja) * 2005-05-12 2011-02-09 エルピーダメモリ株式会社 半導体装置の製造方法
KR100709450B1 (ko) * 2005-07-22 2007-04-18 주식회사 하이닉스반도체 반도체 소자의 형성 방법
US9299643B2 (en) * 2008-09-29 2016-03-29 Cypress Semiconductor Corporation Ruthenium interconnect with high aspect ratio and method of fabrication thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098162A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
US5973351A (en) * 1997-01-22 1999-10-26 International Business Machines Corporation Semiconductor device with high dielectric constant insulator material
US5977241A (en) * 1997-02-26 1999-11-02 Integument Technologies, Inc. Polymer and inorganic-organic hybrid composites and methods for making same
KR100238249B1 (ko) * 1997-07-30 2000-01-15 윤종용 고유전체 커패시터의 제조방법
JP3686248B2 (ja) * 1998-01-26 2005-08-24 株式会社日立製作所 半導体集積回路装置およびその製造方法
JP2000012796A (ja) * 1998-06-19 2000-01-14 Hitachi Ltd 半導体装置ならびにその製造方法および製造装置
JP2000156480A (ja) * 1998-09-03 2000-06-06 Hitachi Ltd 半導体集積回路装置およびその製造方法
SG79292A1 (en) * 1998-12-11 2001-03-20 Hitachi Ltd Semiconductor integrated circuit and its manufacturing method
JP5646798B2 (ja) * 1999-11-11 2014-12-24 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体集積回路装置の製造方法
KR100390938B1 (ko) * 2000-02-09 2003-07-10 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP4034518B2 (ja) * 2000-03-31 2008-01-16 株式会社日立国際電気 半導体装置の製造方法
JP2002134715A (ja) * 2000-10-23 2002-05-10 Hitachi Ltd 半導体集積回路装置およびその製造方法
KR100434489B1 (ko) * 2001-03-22 2004-06-05 삼성전자주식회사 루테늄 산화막 씨딩층을 포함하는 루테늄막 증착 방법

Similar Documents

Publication Publication Date Title
CN112542542B (zh) 集成芯片及其形成方法
JP2002524872A5 (enExample)
TW200405337A (en) Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
JP4064695B2 (ja) 半導体装置の製造方法
TW200405476A (en) Method of fabricating 1T1R resistive memory array
TWI817310B (zh) 半導體裝置與其形成方法
JP2002134715A5 (enExample)
JPH11204753A5 (enExample)
KR100533971B1 (ko) 반도체 소자의 캐패시터 제조방법
JP2003332468A5 (enExample)
JP2002151665A5 (ja) 半導体集積回路装置
JP2004047608A5 (enExample)
US6423593B1 (en) Semiconductor integrated circuit device and process for manufacturing the same
JP2001148428A5 (ja) 不揮発性半導体記憶装置およびその製造方法
US6649465B2 (en) Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes
CN110459507B (zh) 一种半导体存储装置的形成方法
US6054360A (en) Method of manufacturing a semiconductor memory device with a stacked capacitor wherein an electrode of the capacitor is shaped using a high melting point metal film
TW442964B (en) DRAM having COB structure and its fabrication method
KR100463236B1 (ko) 반도체소자의 베리어메탈
KR100517911B1 (ko) 하부전극과 스토리지 노드 콘택간의 오정렬 및확산방지막의 산화를 방지할 수 있는 반도체 장치 제조 방법
CN114121810B (zh) 半导体结构及其制备方法
KR100307968B1 (ko) 플러그폴리를 갖는 반도체장치의 층간절연막 형성방법
KR100406547B1 (ko) 반도체 소자의 커패시터 제조 방법
TW466605B (en) Manufacture method of self-aligned T-type node contact hole
KR950010075A (ko) 터널형 캐패시터구조를 갖는 디램셀 제조방법