JP2004022642A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2004022642A
JP2004022642A JP2002172629A JP2002172629A JP2004022642A JP 2004022642 A JP2004022642 A JP 2004022642A JP 2002172629 A JP2002172629 A JP 2002172629A JP 2002172629 A JP2002172629 A JP 2002172629A JP 2004022642 A JP2004022642 A JP 2004022642A
Authority
JP
Japan
Prior art keywords
semiconductor
film
metal
groove
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002172629A
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English (en)
Japanese (ja)
Other versions
JP2004022642A5 (enExample
Inventor
Yasushi Akasaka
赤坂　泰志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002172629A priority Critical patent/JP2004022642A/ja
Priority to US10/458,489 priority patent/US6956259B2/en
Publication of JP2004022642A publication Critical patent/JP2004022642A/ja
Publication of JP2004022642A5 publication Critical patent/JP2004022642A5/ja
Priority to US11/213,957 priority patent/US7285461B2/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2002172629A 2002-06-13 2002-06-13 半導体装置およびその製造方法 Pending JP2004022642A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002172629A JP2004022642A (ja) 2002-06-13 2002-06-13 半導体装置およびその製造方法
US10/458,489 US6956259B2 (en) 2002-06-13 2003-06-11 Semiconductor device and method of manufacturing the same
US11/213,957 US7285461B2 (en) 2002-06-13 2005-08-30 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002172629A JP2004022642A (ja) 2002-06-13 2002-06-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004022642A true JP2004022642A (ja) 2004-01-22
JP2004022642A5 JP2004022642A5 (enExample) 2005-03-17

Family

ID=31172138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002172629A Pending JP2004022642A (ja) 2002-06-13 2002-06-13 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US6956259B2 (enExample)
JP (1) JP2004022642A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230023235A1 (en) * 2021-07-26 2023-01-26 Applied Materials, Inc. Enhanced stress tuning and interfacial adhesion for tungsten (w) gap fill

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022642A (ja) * 2002-06-13 2004-01-22 Toshiba Corp 半導体装置およびその製造方法
JP2005005580A (ja) * 2003-06-13 2005-01-06 Renesas Technology Corp 半導体装置
US7230312B2 (en) * 2003-12-31 2007-06-12 Micron Technology, Inc. Transistor having vertical junction edge and method of manufacturing the same
DE102004040046B4 (de) * 2004-08-18 2008-04-30 Qimonda Ag Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle, und entsprechender Grabenkondensator
KR100790296B1 (ko) * 2006-12-04 2008-01-02 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449654A (ja) 1990-06-19 1992-02-19 Nec Corp 半導体メモリ
KR0179677B1 (ko) 1993-12-28 1999-04-15 사토 후미오 반도체장치 및 그 제조방법
US6090701A (en) * 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
JP3655013B2 (ja) 1995-08-25 2005-06-02 株式会社東芝 半導体装置の製造方法
US5907188A (en) 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US5905279A (en) 1996-04-09 1999-05-18 Kabushiki Kaisha Toshiba Low resistant trench fill for a semiconductor device
JP4021593B2 (ja) 1998-09-25 2007-12-12 株式会社東芝 半導体装置およびその製造方法
US6319764B1 (en) * 1999-08-25 2001-11-20 Micron Technology, Inc. Method of forming haze-free BST films
JP4761599B2 (ja) 1999-12-03 2011-08-31 株式会社東芝 半導体装置
JP2001189448A (ja) 1999-12-28 2001-07-10 Fujitsu Ltd 半導体装置及びその製造方法
JP4571278B2 (ja) 2000-07-14 2010-10-27 東京エレクトロン株式会社 半導体装置の製造方法
US6638877B2 (en) * 2000-11-03 2003-10-28 Texas Instruments Incorporated Ultra-thin SiO2using N2O as the oxidant
US6730616B2 (en) * 2001-09-24 2004-05-04 Texas Instruments Incorporated Versatile plasma processing system for producing oxidation resistant barriers
JP2004022642A (ja) * 2002-06-13 2004-01-22 Toshiba Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230023235A1 (en) * 2021-07-26 2023-01-26 Applied Materials, Inc. Enhanced stress tuning and interfacial adhesion for tungsten (w) gap fill

Also Published As

Publication number Publication date
US20040026727A1 (en) 2004-02-12
US20060011950A1 (en) 2006-01-19
US6956259B2 (en) 2005-10-18
US7285461B2 (en) 2007-10-23

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