JP2006066577A5 - - Google Patents
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- Publication number
- JP2006066577A5 JP2006066577A5 JP2004246374A JP2004246374A JP2006066577A5 JP 2006066577 A5 JP2006066577 A5 JP 2006066577A5 JP 2004246374 A JP2004246374 A JP 2004246374A JP 2004246374 A JP2004246374 A JP 2004246374A JP 2006066577 A5 JP2006066577 A5 JP 2006066577A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- oxide film
- single crystal
- crystal silicon
- buried oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 12
- 230000015572 biosynthetic process Effects 0.000 claims 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 238000005530 etching Methods 0.000 claims 4
- 238000002955 isolation Methods 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004246374A JP4845357B2 (ja) | 2004-08-26 | 2004-08-26 | 半導体装置とその製造方法 |
| US11/191,190 US7205587B2 (en) | 2004-08-26 | 2005-07-28 | Semiconductor device and method of producing the same |
| US11/638,551 US7285455B2 (en) | 2004-08-26 | 2006-12-14 | Method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004246374A JP4845357B2 (ja) | 2004-08-26 | 2004-08-26 | 半導体装置とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006066577A JP2006066577A (ja) | 2006-03-09 |
| JP2006066577A5 true JP2006066577A5 (enExample) | 2007-01-18 |
| JP4845357B2 JP4845357B2 (ja) | 2011-12-28 |
Family
ID=35943851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004246374A Expired - Fee Related JP4845357B2 (ja) | 2004-08-26 | 2004-08-26 | 半導体装置とその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7205587B2 (enExample) |
| JP (1) | JP4845357B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006128428A (ja) * | 2004-10-29 | 2006-05-18 | Seiko Epson Corp | 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法 |
| JP2006156867A (ja) * | 2004-12-01 | 2006-06-15 | Seiko Epson Corp | 半導体基板の製造方法および半導体装置の製造方法 |
| US7986029B2 (en) * | 2005-11-08 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual SOI structure |
| WO2008039495A1 (en) * | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
| US8115254B2 (en) * | 2007-09-25 | 2012-02-14 | International Business Machines Corporation | Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same |
| US7829971B2 (en) * | 2007-12-14 | 2010-11-09 | Denso Corporation | Semiconductor apparatus |
| US20090201678A1 (en) * | 2008-02-08 | 2009-08-13 | Raley Jay F | Heat sink for semiconductor light sources |
| JP4894910B2 (ja) * | 2009-01-15 | 2012-03-14 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置並びにその半導体装置を内蔵する多層基板 |
| US8093084B2 (en) | 2009-04-30 | 2012-01-10 | Freescale Semiconductor, Inc. | Semiconductor device with photonics |
| CN102280451B (zh) * | 2010-06-13 | 2014-03-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法 |
| US8809156B1 (en) | 2013-01-25 | 2014-08-19 | International Business Machines Corporation | Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications |
| US9478507B2 (en) | 2013-03-27 | 2016-10-25 | Qualcomm Incorporated | Integrated circuit assembly with faraday cage |
| US8748245B1 (en) | 2013-03-27 | 2014-06-10 | Io Semiconductor, Inc. | Semiconductor-on-insulator integrated circuit with interconnect below the insulator |
| US9466536B2 (en) * | 2013-03-27 | 2016-10-11 | Qualcomm Incorporated | Semiconductor-on-insulator integrated circuit with back side gate |
| CN103426828A (zh) * | 2013-07-12 | 2013-12-04 | 上海新储集成电路有限公司 | 一种基于绝缘体上硅材料的双极型高压cmos单多晶硅填充深沟道器件隔离工艺 |
| US9431339B2 (en) | 2014-02-19 | 2016-08-30 | International Business Machines Corporation | Wiring structure for trench fuse component with methods of fabrication |
| US9311442B2 (en) | 2014-04-25 | 2016-04-12 | Globalfoundries Inc. | Net-voltage-aware optical proximity correction (OPC) |
| CN105097851A (zh) * | 2014-05-04 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 一种cmos图像传感器及其制造方法和电子装置 |
| CN112331673A (zh) * | 2019-08-05 | 2021-02-05 | 广东美的白色家电技术创新中心有限公司 | 一种半导体芯片以及智能功率模块 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189154A (ja) * | 1988-01-25 | 1989-07-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US5212397A (en) * | 1990-08-13 | 1993-05-18 | Motorola, Inc. | BiCMOS device having an SOI substrate and process for making the same |
| JPH0669430A (ja) | 1992-08-18 | 1994-03-11 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3644980B2 (ja) * | 1993-09-06 | 2005-05-11 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US5583368A (en) * | 1994-08-11 | 1996-12-10 | International Business Machines Corporation | Stacked devices |
| US6013936A (en) * | 1998-08-06 | 2000-01-11 | International Business Machines Corporation | Double silicon-on-insulator device and method therefor |
| US6521974B1 (en) * | 1999-10-14 | 2003-02-18 | Hitachi, Ltd. | Bipolar transistor and manufacturing method thereof |
| JP2001274234A (ja) * | 2000-03-27 | 2001-10-05 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| DE10138648A1 (de) * | 2001-08-07 | 2003-03-06 | Infineon Technologies Ag | Verfahren zum parallelen Herstellen eines MOS-Transistors und eines Bipolartransistors |
| US6936910B2 (en) * | 2003-05-09 | 2005-08-30 | International Business Machines Corporation | BiCMOS technology on SOI substrates |
-
2004
- 2004-08-26 JP JP2004246374A patent/JP4845357B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-28 US US11/191,190 patent/US7205587B2/en not_active Expired - Fee Related
-
2006
- 2006-12-14 US US11/638,551 patent/US7285455B2/en not_active Expired - Fee Related
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