JP2008520097A5 - - Google Patents

Download PDF

Info

Publication number
JP2008520097A5
JP2008520097A5 JP2007541196A JP2007541196A JP2008520097A5 JP 2008520097 A5 JP2008520097 A5 JP 2008520097A5 JP 2007541196 A JP2007541196 A JP 2007541196A JP 2007541196 A JP2007541196 A JP 2007541196A JP 2008520097 A5 JP2008520097 A5 JP 2008520097A5
Authority
JP
Japan
Prior art keywords
spacer
forming
drain
outside
recessed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007541196A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008520097A (ja
Filing date
Publication date
Priority claimed from US10/986,399 external-priority patent/US7306997B2/en
Application filed filed Critical
Publication of JP2008520097A publication Critical patent/JP2008520097A/ja
Publication of JP2008520097A5 publication Critical patent/JP2008520097A5/ja
Pending legal-status Critical Current

Links

JP2007541196A 2004-11-10 2005-10-12 歪み完全空乏型シリコン・オン・インシュレータ半導体デバイスおよびこの製造方法 Pending JP2008520097A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/986,399 US7306997B2 (en) 2004-11-10 2004-11-10 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
PCT/US2005/036894 WO2006052379A1 (en) 2004-11-10 2005-10-12 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Publications (2)

Publication Number Publication Date
JP2008520097A JP2008520097A (ja) 2008-06-12
JP2008520097A5 true JP2008520097A5 (enExample) 2009-02-12

Family

ID=35658988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007541196A Pending JP2008520097A (ja) 2004-11-10 2005-10-12 歪み完全空乏型シリコン・オン・インシュレータ半導体デバイスおよびこの製造方法

Country Status (7)

Country Link
US (2) US7306997B2 (enExample)
EP (1) EP1815531A1 (enExample)
JP (1) JP2008520097A (enExample)
KR (1) KR101122753B1 (enExample)
CN (1) CN101061587B (enExample)
TW (1) TWI380373B (enExample)
WO (1) WO2006052379A1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2872626B1 (fr) * 2004-07-05 2008-05-02 Commissariat Energie Atomique Procede pour contraindre un motif mince
JP2006165335A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 半導体装置
US7091071B2 (en) * 2005-01-03 2006-08-15 Freescale Semiconductor, Inc. Semiconductor fabrication process including recessed source/drain regions in an SOI wafer
US7446350B2 (en) * 2005-05-10 2008-11-04 International Business Machine Corporation Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
JP2006332243A (ja) * 2005-05-25 2006-12-07 Toshiba Corp 半導体装置及びその製造方法
US7384851B2 (en) * 2005-07-15 2008-06-10 International Business Machines Corporation Buried stress isolation for high-performance CMOS technology
DE102005052055B3 (de) 2005-10-31 2007-04-26 Advanced Micro Devices, Inc., Sunnyvale Eingebettete Verformungsschicht in dünnen SOI-Transistoren und Verfahren zur Herstellung desselben
GB2445511B (en) * 2005-10-31 2009-04-08 Advanced Micro Devices Inc An embedded strain layer in thin soi transistors and a method of forming the same
US7422950B2 (en) * 2005-12-14 2008-09-09 Intel Corporation Strained silicon MOS device with box layer between the source and drain regions
US7473593B2 (en) * 2006-01-11 2009-01-06 International Business Machines Corporation Semiconductor transistors with expanded top portions of gates
US7569434B2 (en) * 2006-01-19 2009-08-04 International Business Machines Corporation PFETs and methods of manufacturing the same
EP1833094B1 (en) * 2006-03-06 2011-02-02 STMicroelectronics (Crolles 2) SAS Formation of shallow SiGe conduction channel
US7613369B2 (en) * 2006-04-13 2009-11-03 Luxtera, Inc. Design of CMOS integrated germanium photodiodes
JP5182703B2 (ja) * 2006-06-08 2013-04-17 日本電気株式会社 半導体装置
US8154051B2 (en) * 2006-08-29 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. MOS transistor with in-channel and laterally positioned stressors
JP2008071851A (ja) * 2006-09-13 2008-03-27 Sony Corp 半導体装置および半導体装置の製造方法
JP2008153515A (ja) * 2006-12-19 2008-07-03 Fujitsu Ltd Ｍｏｓトランジスタ、そのｍｏｓトランジスタの製造方法、そのｍｏｓトランジスタを利用したｃｍｏｓ型半導体装置、及び、そのｃｍｏｓ型半導体装置を利用した半導体装置
US20080157118A1 (en) * 2006-12-29 2008-07-03 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system employing strained technology
US9640666B2 (en) * 2007-07-23 2017-05-02 GlobalFoundries, Inc. Integrated circuit employing variable thickness film
JP2009212413A (ja) * 2008-03-06 2009-09-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
KR101592505B1 (ko) * 2009-02-16 2016-02-05 삼성전자주식회사 반도체 메모리 소자 및 이의 제조 방법
US8106456B2 (en) * 2009-07-29 2012-01-31 International Business Machines Corporation SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristics
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
CN102299092B (zh) * 2010-06-22 2013-10-30 中国科学院微电子研究所 一种半导体器件及其形成方法
CN102376769B (zh) * 2010-08-18 2013-06-26 中国科学院微电子研究所 超薄体晶体管及其制作方法
CN102487018B (zh) * 2010-12-03 2014-03-12 中芯国际集成电路制造(北京)有限公司 Mos晶体管及其形成方法
CN102122669A (zh) * 2011-01-27 2011-07-13 上海宏力半导体制造有限公司 晶体管及其制作方法
US8455308B2 (en) 2011-03-16 2013-06-04 International Business Machines Corporation Fully-depleted SON
US9184214B2 (en) * 2011-04-11 2015-11-10 Globalfoundries Inc. Semiconductor device exhibiting reduced parasitics and method for making same
US20120326230A1 (en) * 2011-06-22 2012-12-27 International Business Machines Corporation Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature
US20140183618A1 (en) * 2011-08-05 2014-07-03 X-Fab Semiconductor Foundries Ag Semiconductor device
US9136158B2 (en) * 2012-03-09 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral MOSFET with dielectric isolation trench
US8664050B2 (en) 2012-03-20 2014-03-04 International Business Machines Corporation Structure and method to improve ETSOI MOSFETS with back gate
CN102931092A (zh) * 2012-10-26 2013-02-13 哈尔滨工程大学 一种自对准soi fd mosfet形成方法
CN103779279B (zh) * 2012-10-26 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9525027B2 (en) * 2014-03-13 2016-12-20 Globalfoundries Inc. Lateral bipolar junction transistor having graded SiGe base
FR3025941A1 (fr) * 2014-09-17 2016-03-18 Commissariat Energie Atomique Transistor mos a resistance et capacites parasites reduites
CN105632909B (zh) * 2014-11-07 2019-02-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
US9281305B1 (en) 2014-12-05 2016-03-08 National Applied Research Laboratories Transistor device structure
CN105742248A (zh) * 2014-12-09 2016-07-06 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
US20230292524A1 (en) * 2022-02-02 2023-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric memory device with relaxation layers
US12166729B2 (en) * 2022-02-18 2024-12-10 Psemi Corporation LNA with Tx harmonic filter
US12489013B2 (en) 2022-09-27 2025-12-02 Globalfoundries U.S. Inc. Semiconductor-on-insulator field-effect transistors including stress-inducing components

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2636786B2 (ja) * 1995-03-20 1997-07-30 日本電気株式会社 半導体装置の製造方法
DE19533313A1 (de) * 1995-09-08 1997-03-13 Max Planck Gesellschaft Halbleiterstruktur für einen Transistor
JP3373772B2 (ja) * 1997-11-19 2003-02-04 株式会社東芝 半導体装置
US6303448B1 (en) * 1998-11-05 2001-10-16 Taiwan Semiconductor Manufacturing Company Method for fabricating raised source/drain structures
US6339244B1 (en) * 2000-02-22 2002-01-15 Advanced Micro Devices, Inc. Fully depleted silicon on insulator semiconductor device and manufacturing method therefor
US6323104B1 (en) * 2000-03-01 2001-11-27 Micron Technology, Inc. Method of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitry
JP2002083972A (ja) * 2000-09-11 2002-03-22 Hitachi Ltd 半導体集積回路装置
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
JP2002237590A (ja) * 2001-02-09 2002-08-23 Univ Tohoku Ｍｏｓ型電界効果トランジスタ
US6558994B2 (en) * 2001-03-01 2003-05-06 Chartered Semiconductors Maufacturing Ltd. Dual silicon-on-insulator device wafer die
US6621131B2 (en) * 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6605498B1 (en) * 2002-03-29 2003-08-12 Intel Corporation Semiconductor transistor having a backfilled channel material
FR2838237B1 (fr) * 2002-04-03 2005-02-25 St Microelectronics Sa Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
KR100416627B1 (ko) * 2002-06-18 2004-01-31 삼성전자주식회사 반도체 장치 및 그의 제조방법
US6680240B1 (en) * 2002-06-25 2004-01-20 Advanced Micro Devices, Inc. Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
US20040033677A1 (en) * 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
JP4546021B2 (ja) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 絶縁ゲート型電界効果型トランジスタ及び半導体装置
US6902991B2 (en) * 2002-10-24 2005-06-07 Advanced Micro Devices, Inc. Semiconductor device having a thick strained silicon layer and method of its formation
CN100378901C (zh) 2002-11-25 2008-04-02 国际商业机器公司 应变鳍型场效应晶体管互补金属氧化物半导体器件结构
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
US8097924B2 (en) * 2003-10-31 2012-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-shallow junction MOSFET having a high-k gate dielectric and in-situ doped selective epitaxy source/drain extensions and a method of making same
US7037795B1 (en) * 2004-10-15 2006-05-02 Freescale Semiconductor, Inc. Low RC product transistors in SOI semiconductor process

Similar Documents

Publication Publication Date Title
JP2008520097A5 (enExample)
CN103531477B (zh) 具有位于下方的嵌入式抗穿通层的FinFET方法和结构
GB2579463A (en) Utilizing multiplayer gate spacer to reduce erosion of semiconductor fin during spacer patterning
TW200620489A (en) Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
CN102194697A (zh) 半导体结构的形成方法
JP2006517343A5 (enExample)
JP2012504345A5 (enExample)
TW200634930A (en) Method for fabricating semiconductor device
JP2009532875A5 (enExample)
GB2515930A (en) A Method of fabricating tunnel transistors with abrupt junctions
TW200725743A (en) Semiconductor device having a trench gate the fabricating method of the same
JP2007250665A (ja) 半導体装置及びその製造方法
CN101447512A (zh) 具有抬高的源/漏区的mos器件
TW200607094A (en) Semiconductor device and method of manufacturing thereof
JP2008519434A5 (enExample)
CN102437183A (zh) 半导体器件及其制造方法
CN103578996A (zh) 晶体管制造方法
WO2007036998A1 (ja) 半導体装置及びその製造方法
CN103681329A (zh) 半导体器件及其制造方法
CN103579308B (zh) Mos晶体管器件及其制造方法
CN102931233B (zh) Nmos晶体管及其形成方法
WO2008102448A1 (ja) 半導体装置と半導体装置の製造方法
CN103165454B (zh) 半导体器件及其制造方法
TW200634897A (en) Method for fabricating semiconductor device
TW200735268A (en) Method of fabricating semiconductor device