WO2008102448A1 - 半導体装置と半導体装置の製造方法 - Google Patents

半導体装置と半導体装置の製造方法 Download PDF

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Publication number
WO2008102448A1
WO2008102448A1 PCT/JP2007/053299 JP2007053299W WO2008102448A1 WO 2008102448 A1 WO2008102448 A1 WO 2008102448A1 JP 2007053299 W JP2007053299 W JP 2007053299W WO 2008102448 A1 WO2008102448 A1 WO 2008102448A1
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WIPO (PCT)
Prior art keywords
gate electrode
semiconductor device
side wall
insulating film
conduction type
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PCT/JP2007/053299
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English (en)
French (fr)
Inventor
Yosuke Shimamune
Naoyoshi Tamura
Akira Katakami
Akiyoshi Hatada
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Fujitsu Microelectronics Limited
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Priority to PCT/JP2007/053299 priority Critical patent/WO2008102448A1/ja
Publication of WO2008102448A1 publication Critical patent/WO2008102448A1/ja

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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

<> </> 　製造工程を簡略化できる、応力印加機構を有するＭＯＳトランジスタ半導体装置とその製造方法を提供する。 　半導体装置は、シリコン基板の第１導電型の活性領域上に形成されたゲート絶縁膜と、その上に形成されたゲート電極を含む絶縁ゲート電極構造と、絶縁ゲート電極構造の両側の活性領域に形成された、第２導電型のソース／ドレイン領域と、絶縁ゲート電極構造の側壁上に形成され、エッチング特性の異なる第１、第２の絶縁層を含むサイドウォールスペーサと、サイドウォールスペーサの下部において、外側側壁面からゲート電極に向かって形成され、ソース／ドレイン領域のシリコン表面を露出し、ゲート電極との間にサイドウォールスペーサの一部を残す横方向スリットと、横方向スリット内でのみ、シリコン表面上にエピタキシャルに成長され、横方向スリットを埋め、シリコンと異なる格子定数を有する第2導電型の応力印加結晶層と、を有する。
PCT/JP2007/053299 2007-02-22 2007-02-22 半導体装置と半導体装置の製造方法 WO2008102448A1 (ja)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009026855A (ja) * 2007-07-18 2009-02-05 Panasonic Corp 半導体装置及びその製造方法
CN103594372A (zh) * 2012-08-17 2014-02-19 中国科学院微电子研究所 半导体器件制造方法
CN103730417A (zh) * 2012-10-10 2014-04-16 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
CN108807175A (zh) * 2017-04-26 2018-11-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN111725294A (zh) * 2019-03-22 2020-09-29 三星电子株式会社 半导体器件及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027192A2 (en) * 2003-09-10 2005-03-24 International Business Machines Corporation Structure and method of making strained channel cmos transistors having lattice-mismatched epitaxial extension and source and drain regions
JP2006332337A (ja) * 2005-05-26 2006-12-07 Toshiba Corp 半導体装置及びその製造方法
JP2007036205A (ja) * 2005-06-22 2007-02-08 Fujitsu Ltd 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027192A2 (en) * 2003-09-10 2005-03-24 International Business Machines Corporation Structure and method of making strained channel cmos transistors having lattice-mismatched epitaxial extension and source and drain regions
JP2006332337A (ja) * 2005-05-26 2006-12-07 Toshiba Corp 半導体装置及びその製造方法
JP2007036205A (ja) * 2005-06-22 2007-02-08 Fujitsu Ltd 半導体装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009026855A (ja) * 2007-07-18 2009-02-05 Panasonic Corp 半導体装置及びその製造方法
US8178929B2 (en) 2007-07-18 2012-05-15 Panasonic Corporation Semiconductor device and method for fabricating the same
CN103594372A (zh) * 2012-08-17 2014-02-19 中国科学院微电子研究所 半导体器件制造方法
CN103730417A (zh) * 2012-10-10 2014-04-16 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
CN108807175A (zh) * 2017-04-26 2018-11-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN111725294A (zh) * 2019-03-22 2020-09-29 三星电子株式会社 半导体器件及其制造方法
TWI818097B (zh) * 2019-03-22 2023-10-11 南韓商三星電子股份有限公司 包含場效電晶體的半導體裝置及其製作方法
CN111725294B (zh) * 2019-03-22 2024-05-28 三星电子株式会社 半导体器件及其制造方法

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